GSO ISO 14701:2013
表面化学分析 X射线光电子能谱 氧化硅厚度测量

Surface chemical analysis -- X-ray photoelectron spectroscopy -- Measurement of silicon oxide thickness

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标准号

GSO ISO 14701:2013

发布

2013年

发布单位

GSO

当前最新

GSO ISO 14701:2013

 

 

适用范围

This International Standard specifies several methods for measuring the oxide thickness at the surfaces of (100) and (111) silicon wafers as an equivalent thickness of silicon dioxide when measured using X-ray photoelectron spectroscopy. It is only applicable to flat, polished specimens and for instruments that incorporate an Al or Mg X-ray source, a specimen stage that permits defined photoelectron emission angles and a spectrometer with an input lens that can be restricted to less than a 6° cone semi-angle. For thermal oxides in the range 1 nm to 8 nm thickness, using the best method described in this International Standard, uncertainties, at a 95 % confidence level, could typically be around 2 % and around 1 % at optimum. A simpler method is also given with slightly poorer, but often adequate, uncertainties.

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