DLA SMD-5962-95625 REV A-1996
数字的互补金属氧化物半导体,16-MEG用户配置电可擦除只读存储器硅单片电路线型微电路

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 16-MEG, USER CONFIGURABLE FLASH EEPROM, MONOLITHIC SILICON

作废

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标准号

DLA SMD-5962-95625 REV A-1996

发布

1996年

发布单位

美国国防后勤局

 

 

适用范围

This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Three xoduct assurance classes consisting of space application (device class V), military high r eliability (device classes 1 and QI, and non-traditional military (device class N) with a choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). Device class M microcircuits represent non-JAN class B nicrocircuits in accordance with 1.2.1 of MIL-STD-883, IlProvisions for the use of MIL-STD-883 in conjunction with iompliant non-JAN devices." For device class N, the user I s cautioned t o assure that the device is appropriate for the application environment. When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

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