GB/T 4326-2006
Extrinsic semiconductor single crystals measurement of Hall mobility and Hall coefficient (English Version)
- Standard No.
- GB/T 4326-2006
- Language
- Chinese, Available in English version
- Release Date
- 2006
- Published By
- General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China
- Latest
- GB/T 4326-2006
- Replace
- GB/T 4326-1984
- Scope
- The measurement methods specified in this standard are suitable for measuring the Hall coefficient, carrier Hall mobility, resistivity and carrier concentration of extrinsic semiconductor single crystal materials. The measurement methods stipulated in this standard have only carried out laboratory measurements on germanium, silicon, gallium arsenide and gallium phosphide single crystal materials in a limited range, but this method can also be applied to other semiconductor single crystal materials. In general, It is suitable for testing semiconductor single crystal materials with room temperature resistivity up to 104Ω·cm.
GB/T 4326-2006 history
- 2006 GB/T 4326-2006 Extrinsic semiconductor single crystals measurement of Hall mobility and Hall coefficient
- 1984 GB/T 4326-1984 Extrinsic semiconductor single crystals--Measurement of Hall mobility and Hall coefficient