ZH
RU
ES

Quaternary Probe

Quaternary Probe, Total:43 items.

In the international standard classification, Quaternary Probe involves: Electricity. Magnetism. Electrical and magnetic measurements, Testing of metals, Non-ferrous metals, Materials for the reinforcement of composites, Linear and angular measurements, Semiconducting materials, Semiconductor devices, Test conditions and procedures in general, Conducting materials, Plastics, Ceramics, Farming and forestry, Electronic display devices.

Professional Standard - Electron, Quaternary Probe

SJ/T 10315-1992 Generic specification of Four-point probe
SJ/T 10314-1992 Generic specification of resistivity measuring instrument with four-point probe
SJ/T 31122-1994 Requirements of readiness and methods of inspection and assessment for four-point probes

National Metrological Verification Regulations of the People's Republic of China, Quaternary Probe

JJG 508-2004 Resistivity Measuring Instruments with Four - Probe Array Method
JJG 508-1987 Verification Regulation of Resistivity Measuring Instruments with Four-Prope Array Method

国家市场监督管理总局、中国国家标准化管理委员会, Quaternary Probe

GB/T 1551-2021 Test method for measuring resistivity of monocrystal silicon—In-line four-point probe and direct current two-point probe method
GB/T 39978-2021 Nanotechnology—Resistivity of carbon nanotube powder—Four probe method

General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China, Quaternary Probe

GB/T 1552-1995 Test method for measuring resistivity of monocrystal silicon and germanium with a collinear four-probe array
GB/T 26074-2010 Germanium monocrystal.Measurement of resistivity-DC linear four-point probe
GB/T 14141-2009 Test method for sheet resistance of silicon epitaxial,diffused and ion-implanted layers using a collinear four-probe array

RU-GOST R, Quaternary Probe

GOST 24392-1980 Monocrystalline silicon and germanium. Measurement of the electrical resistivity by the four-probe method

Group Standards of the People's Republic of China, Quaternary Probe

T/CSTM 00252-2020 Test method for carbon fiber electrical resistivity by Four-probe method
T/CASAS 019-2021 Test method for resistivity of micro and nano metal sintered compact: four probe method
T/ZGIA 001-2019 Graphene test method for the determination of powder conductivity four-probe method

Japanese Industrial Standards Committee (JISC), Quaternary Probe

JIS H 0612:1975 Testing methods of resistivity for single crystal silicon wafers with four point probe
JIS H 0602:1995 Testing method of resistivity for silicon crystals and silicon wafers with four-point probe
JIS K 7194:1994 Testing method for resistivity of conductive plastics with a four-point probe array
JIS R 1637:1998 Test method for resistivity of conductive fine ceramic thin films with a four-point probe array

Hebei Provincial Standard of the People's Republic of China, Quaternary Probe

DB13/T 5255-2020 Determination of square resistance of graphene conductive ink by four-probe method
DB13/T 5026.3-2019 Method for Determination of Physical Properties of Graphene Conductive Paste Part 3: Four-probe Method for Determination of Electrode Resistivity of Paste

Jiangsu Provincial Standard of the People's Republic of China, Quaternary Probe

DB32/T 4027-2021 Dynamic four-probe method for the determination of electrical conductivity of graphene powder
DB32/T 4378-2022 Four-probe method for non-destructive testing of sheet resistance of nanometer and submicron scale thin films on substrate surface

Korean Agency for Technology and Standards (KATS), Quaternary Probe

KS D 0260-1999 TESTING METHODS OF RESISTIVITY FOR SINGLE CRYSTAL SILICON WAFERS WITH FOUR-POINT PROBE
KS L 1619-2013(2018) Testing methods for resistivity of conductive fine ceramic thin films with four point probe array
KS C 0256-2002(2022) Testing method of resistivity for silicon crystals and silicon wafers with four - point probe
KS D 0260-1989(1994) TESTING METHODS OF RESISTIVITY FOR SINGLE CRYSTAL SILICON WAFERS WITH FOUR-POINT PROBE
KS C 0256-2002(2017) Testing method of resistivity for silicon crystals and silicon wafers with four - point probe
KS C IEC TS 62607-6-1:2022 Nanomanufacturing — Key control characteristics — Part 6-1: Graphene-based material — Volume resistivity: four probe method

German Institute for Standardization, Quaternary Probe

DIN 50431:1988 Testing of semiconductor materials; measurement of the resistivity of silicon or germanium single crystals by means of the four probe/direct current method with collinear array
DIN 50435:1988 Testing of semiconductor materials; determination of the radial resistivity variation of silicon or germanium slices by means of the four-probe/direct current method

American Society for Testing and Materials (ASTM), Quaternary Probe

ASTM F390-98(2003) Standard Test Method for Sheet Resistance of Thin Metallic Films With a Collinear Four-Probe Array
ASTM F390-98 Standard Test Method for Sheet Resistance of Thin Metallic Films With a Collinear Four-Probe Array
ASTM F390-11 Standard Test Method for Sheet Resistance of Thin Metallic Films With a Collinear Four-Probe Array
ASTM F1711-96(2016) Standard Practice for Measuring Sheet Resistance of Thin Film Conductors for Flat Panel Display Manufacturing Using a Four-Point Probe Method

ASHRAE - American Society of Heating@ Refrigerating and Air-Conditioning Engineers@ Inc., Quaternary Probe

ASHRAE LO-09-092-2009 Modeling and Optimization of a Cascaded Mixed Gas Joule-Thompson Cryoprobe System

British Standards Institution (BSI), Quaternary Probe

PD IEC TS 62607-6-1:2020 Nanomanufacturing. Key control characteristics. Graphene-based material. Volume resistivity: four probe method
BS EN ISO 18452:2016 Fine ceramics (advanced ceramics, advanced technical ceramics). Determination of thickness of ceramic films by contact-probe profilometer
BS EN 1071-4:2006 Advanced technical ceramics - Methods of test for ceramic coatings - Determination of chemical composition by electron probe microanalysis (EPMA)

IX-IX-IEC, Quaternary Probe

IEC TS 62607-6-8:2023 Nanomanufacturing - Key control characteristics - Part 6-8: Graphene - Sheet resistance: In-line four-point probe

Association Francaise de Normalisation, Quaternary Probe

NF A92-810*NF EN ISO 18452:2016 Fine ceramics (advanced ceramics, advanced technical ceramics) - Determination of thickness of ceramic films by contact-probe profilometer

International Electrotechnical Commission (IEC), Quaternary Probe

IEC TS 62607-6-1:2020 Nanomanufacturing - Key control characteristics - Part 6-1: Graphene-based material - Volume resistivity: four probe method

KR-KS, Quaternary Probe

KS C IEC TS 62607-6-1-2022 Nanomanufacturing — Key control characteristics — Part 6-1: Graphene-based material — Volume resistivity: four probe method

International Organization for Standardization (ISO), Quaternary Probe

ISO 18452:2005 Fine ceramics (advanced ceramics, advanced technical ceramics) - Determination of thickness of ceramic films by contact-probe profilometer