ZH
RU
ES

crystal half height

crystal half height, Total:41 items.

In the international standard classification, crystal half height involves: Semiconductor devices, Conducting materials, Semiconducting materials, Testing of metals.

Defense Logistics Agency, crystal half height

• DLA MIL-PRF-19500/27 E NOTICE 2-1999 SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, HIGH-FREQUENCY TYPE 2N384
• DLA DSCC-DWG-04029-2005 SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH POWER TYPE 2N5927
• DLA DSCC-DWG-04030-2005 SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH POWER TYPE 2N5926
• DLA MIL-S-19500/9 B VALID NOTICE 3-2011 Semiconductor Device, Transistor, PNP, Germanium, High Frequency, 25 Milliwatt, Type JAN-2N128
• DLA MIL-PRF-19500/622 C-2008 SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER TYPE 2N7368 JAN, JANTX, JANTXV, AND JANS
• DLA MIL-S-19500/208 B VALID NOTICE 4-2011 Semiconductor Device, Transistor, NPN, Silicon, High Power, Types 2N1487, 22N1488, 2N1489 and 2N1490
• DLA MIL-S-19500/217 B VALID NOTICE 4-2011 Semiconductor Device, Transistors, PNP, Germanium, High-Power Types 2N456B, 2N457B, 2N458B, 2N1021A, 2N1022A
• DLA MIL-PRF-19500/622 D-2013 SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER TYPE 2N7368 JAN, JANTX, JANTXV, AND JANS
• DLA MIL-PRF-19500/522 A VALID NOTICE 2-2008 Semiconductor Device, Transistor, NPN, Silicon, High-Frequency Types 2N6603 and 2N6604 JAN, JANTX, and JANTXV
• DLA MIL-PRF-19500/384 F VALID NOTICE 1-2013 Semiconductor Device, Transistor, NPN, Silicon High-Power, Types 2N3584, 2N3585, JAN, JANTX, and JANTXV
• DLA MIL-PRF-19500/384 G-2013 SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON HIGH-POWER, TYPES 2N3584, 2N3585, JAN, JANTX, AND JANTXV
• DLA MIL-PRF-19500/262 G-2013 SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER TYPES 2N1722 AND 2N1724, JAN AND JANTX
• DLA MIL-PRF-19500/522 A VALID NOTICE 3-2013 Semiconductor Device, Transistor, NPN, Silicon, High-Frequency Types 2N6603 and 2N6604 JAN, JANTX, and JANTXV
• DLA MIL-PRF-19500/413 F-2008 SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER, TYPES 2N3771 AND 2N3772, JAN, JANTX, AND JANTXV
• DLA MIL-PRF-19500/415 A VALID NOTICE 1-2008 Semiconductor, Device, Transistor, NPN, Silicon, High-Power Types 2N2812 and 2N2814 JAN, JANTX, and JANTXV
• DLA MIL-PRF-19500/488 E VALID NOTICE 1-2013 Semiconductor Device, Transistor, NPN, Silicon, High-Power, Types 2N5671 and 2N5672, JAN, JANTX, JANTXV, and JANS
• DLA MIL-PRF-19500/408 J-2008 SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER, TYPES 2N3715 AND 2N3716, JAN, JANTX, JANTXV, AND JANS
• DLA MIL-PRF-19500/488 E-2008 SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER, TYPES 2N5671 AND 2N5672, JAN, JANTX, JANTXV, AND JANS
• DLA MIL-S-19500/341 B VALID NOTICE 3-2011 Semiconductor Device, Transistor, NPN, Silicon, High-Frequency, Power Types 2N3375, 2N3553, and 2N4440 JAN, JANTX, and JANTXV
• DLA MIL-S-19500/341B-1968 SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-FREQUENCY, POWER TYPES 2N3375, 2N3553, AND 2N4440 JAN, JANTX, AND JANTXV
• DLA MIL-PRF-19500/652 C-2013 SEMICONDUCTOR DEVICE, TRANSISTOR, HIGH VOLTAGE, FIELD EFFECT, N-CHANNEL, SILICON, TYPE 2N7387 AND 2N7387U1, JAN, JANTX, JANTXV, AND JANS
• DLA MIL-PRF-19500/398 J-2010 SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-FREQUENCY, TYPES 2N3866, 2N3866A, 2N3866UB, 2N3866AUB, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
• DLA MIL-PRF-19500/439 G-2012 SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER, TYPES 2N5038 AND 2N5039, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
• DLA MIL-PRF-19500/461 F-2008 SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, HIGH-POWER, TYPE 2N6211, 2N6212, 2N6213, 2N6213A, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
• DLA MIL-PRF-19500/453 F-2011 SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-FREQUENCY TYPE 2N5109 AND 2N5109UB, JAN, JANTX, JANTXV, JANS, JANHC, JANKC JANSM, JANSD, JANSP, JANSL, JANSR, JANSF, JANSG, AND JANSH
• DLA SMD-5962-86071 REV C-2002 MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY, TTL, SHIFT REGISTER, MONOLITHIC SILICON
• DLA SMD-5962-86074 REV C-2002 MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY, TTL, REGISTER, MONOLITHIC SILICON
• DLA SMD-5962-86072 REV D-2002 MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY, TTL, BINARY COUNTER, MONOLITHIC SILICON
• DLA MIL-PRF-19500/370 G-2008 SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER, TYPE 2N3442, JAN, JANTX, AND JANTXV
• DLA MIL-S-19500/529 VALID NOTICE 4-2011 Semiconductor Device, Transistor, Silicon Type 2N3904

Group Standards of the People's Republic of China, crystal half height

• T/ZZB 2283-2021 Ultra-high purity graphite powder for semiconductor silicon carbide crystal

CZ-CSN, crystal half height

• CSN 35 8745-1973 Semiconductor devices. Transistore. Measurement of open-circuit reverse voltage transfer ratio and tinie coefíicient at high frequencies

General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China, crystal half height

• GB/T 1555-1997 Test methods for determining the orientation of a semiconductor single crystal
• GB/T 1555-2023 Method for Determination of Crystalline Orientation of Semiconductor Single Crystal
• GB/T 1555-2009 Testing methods for determining the orientation of a semiconductor single crystal

Professional Standard - Electron, crystal half height

• SJ 50033/1-1994 Semiconductor discrete device.Detail specification for type 3DA150 high frequency and power transistor
• SJ 50033/103-1996 Semiconductor discrete devices--Detail specification for Type 3DA89 high-frequency power transistor
• SJ 50033/61-1995 Semiconductor discrete device.Detail specification for type 3DK6547 high-voltage and power switching transistor
• SJ 50033/62-1995 Semiconductor discrete device.Detail specification for type 3DK406 high-voltage and power switching transistor

Military Standard of the People's Republic of China-General Armament Department, crystal half height

• GJB 33/001-1989 Blank detailed specification for high frequency low power transistors for semiconductor discrete devices

工业和信息化部, crystal half height

• SJ/T 1486-2016 Semiconductor discrete device 3CG180 type silicon PNP high frequency high back voltage low power transistor detailed specification

Others:   half height unit, Half width, Half width, FWHM and, Half English, half height definition, FWH+, crystal half height, half height curve, half width height, half height soft, Half height of light source, result half height, led half height, mid wind, half height analysis, Die Half Height, water half height, half height use, half height software.