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Die Half Height

Die Half Height, Total:241 items.

In the international standard classification, Die Half Height involves: Iron and steel products, Nuclear energy engineering, Integrated circuits. Microelectronics, Electronic components in general, Semiconductor devices, Semiconducting materials, Conducting materials, Testing of metals, Capacitors, Products of the chemical industry, Ceramics, Welding, brazing and soldering, Rectifiers. Convertors. Stabilized power supply, Mechanical structures for electronic equipment, Integrated Services Digital Network (ISDN), Environmental testing, Electrical and electronic testing, Fibre optic communications, Valves, Pipeline components and pipelines.

Group Standards of the People's Republic of China, Die Half Height

T/SXJP 018-2023 Fine-grain high-strength hot-rolled ribbed steel bars
T/IAWBS 017-2022 Test method for full width at half maximum of double crystal X-rayrocking curve of diamond single crystal substrate
T/IAWBS 015-2021 Test method for full width at half maximum of double crystal X-ray rocking curve of Ga2O3 single crystal substrate
T/IAWBS 016-2022 X-ray double crystal rocking curve FWHM test method for silicon carbide single wafer
T/ZZB 2283-2021 Ultra-high purity graphite powder for semiconductor silicon carbide crystal
T/CSTM 00799-2023 Determination of grain size in steel—High temperature laser scanning confocal microscope method

Professional Standard - Aviation, Die Half Height

HB 20057-2011 Test methods for estimating grain size of superalloy investment castings

Professional Standard - Building Materials, Die Half Height

JC/T 2018-2010 Thallium doped cesium iodide crystal for high-energy particles detection

International Electrotechnical Commission (IEC), Die Half Height

IEC 62435-5:2017 Electronic components - Long-term storage of electronic semiconductor devices - Part 5: Die and wafer devices
IEC 60747-7-4:1991 Semiconductor devices; discrete devices; part 7: bipolar transistors; section 4: blank detail specification for case-rated bipolar transistors for high-frequency amplification
IEC 60747-7-1:1989 Semiconductor devices; discrete devices; part 7: bipolar transistors; section one: blank detail specification for ambient-rated bipolar transistors for low and high-frequency amplification

British Standards Institution (BSI), Die Half Height

BS EN 62435-5:2017 Electronic components - Long-term storage of electronic semiconductor devices. - Part 5: Die and wafer devices
BS EN 10222-4:2017 Steel forgings for pressure purposes. Weldable fine grain steels with high proof strength
BS EN 10222-4:1999 Steel forgings for pressure purposes. Weldable fine-grain steels with high proof strength
BS EN 10222-4:2017+A1:2021 Steel forgings for pressure purposes. Weldable fine grain steels with high proof strength
19/30396207 DC BS EN 10222-4 AMD1. Steel forgings for pressure purposes. Part 4. Weldable fine grain steels with high proof strength
BS EN 10217-3:2019 Welded steel tubes for pressure purposes. Technical delivery conditions - Electric welded and submerged arc welded alloy fine grain steel tubes with specified room, elevated and low temperature properties

Defense Logistics Agency, Die Half Height

DLA DSCC-DWG-04029-2005 SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH POWER TYPE 2N5927
DLA DSCC-DWG-04030-2005 SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH POWER TYPE 2N5926
DLA MIL-PRF-19500/27 E NOTICE 2-1999 SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, HIGH-FREQUENCY TYPE 2N384
DLA MIL-S-19500/9 B VALID NOTICE 3-2011 Semiconductor Device, Transistor, PNP, Germanium, High Frequency, 25 Milliwatt, Type JAN-2N128
DLA MIL-PRF-19500/370 G-2008 SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER, TYPE 2N3442, JAN, JANTX, AND JANTXV
DLA MIL-PRF-19500/622 C-2008 SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER TYPE 2N7368 JAN, JANTX, JANTXV, AND JANS
DLA MIL-S-19500/208 B VALID NOTICE 4-2011 Semiconductor Device, Transistor, NPN, Silicon, High Power, Types 2N1487, 22N1488, 2N1489 and 2N1490
DLA MIL-S-19500/217 B VALID NOTICE 4-2011 Semiconductor Device, Transistors, PNP, Germanium, High-Power Types 2N456B, 2N457B, 2N458B, 2N1021A, 2N1022A
DLA MIL-PRF-19500/622 D-2013 SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER TYPE 2N7368 JAN, JANTX, JANTXV, AND JANS
DLA MIL-PRF-19500/522 A VALID NOTICE 2-2008 Semiconductor Device, Transistor, NPN, Silicon, High-Frequency Types 2N6603 and 2N6604 JAN, JANTX, and JANTXV
DLA MIL-PRF-19500/384 F VALID NOTICE 1-2013 Semiconductor Device, Transistor, NPN, Silicon High-Power, Types 2N3584, 2N3585, JAN, JANTX, and JANTXV
DLA MIL-PRF-19500/384 G-2013 SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON HIGH-POWER, TYPES 2N3584, 2N3585, JAN, JANTX, AND JANTXV
DLA MIL-PRF-19500/262 G-2013 SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER TYPES 2N1722 AND 2N1724, JAN AND JANTX
DLA MIL-PRF-19500/522 A VALID NOTICE 3-2013 Semiconductor Device, Transistor, NPN, Silicon, High-Frequency Types 2N6603 and 2N6604 JAN, JANTX, and JANTXV
DLA MIL-PRF-19500/413 F-2008 SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER, TYPES 2N3771 AND 2N3772, JAN, JANTX, AND JANTXV
DLA MIL-PRF-19500/415 A VALID NOTICE 1-2008 Semiconductor, Device, Transistor, NPN, Silicon, High-Power Types 2N2812 and 2N2814 JAN, JANTX, and JANTXV
DLA MIL-PRF-19500/488 E VALID NOTICE 1-2013 Semiconductor Device, Transistor, NPN, Silicon, High-Power, Types 2N5671 and 2N5672, JAN, JANTX, JANTXV, and JANS
DLA MIL-PRF-19500/408 J-2008 SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER, TYPES 2N3715 AND 2N3716, JAN, JANTX, JANTXV, AND JANS
DLA MIL-PRF-19500/488 E-2008 SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER, TYPES 2N5671 AND 2N5672, JAN, JANTX, JANTXV, AND JANS
DLA MIL-S-19500/341 B VALID NOTICE 3-2011 Semiconductor Device, Transistor, NPN, Silicon, High-Frequency, Power Types 2N3375, 2N3553, and 2N4440 JAN, JANTX, and JANTXV
DLA MIL-S-19500/341B-1968 SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-FREQUENCY, POWER TYPES 2N3375, 2N3553, AND 2N4440 JAN, JANTX, AND JANTXV
DLA MIL-PRF-19500/398 J-2010 SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-FREQUENCY, TYPES 2N3866, 2N3866A, 2N3866UB, 2N3866AUB, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
DLA MIL-PRF-19500/439 G-2012 SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER, TYPES 2N5038 AND 2N5039, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
DLA MIL-PRF-19500/461 F-2008 SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, HIGH-POWER, TYPE 2N6211, 2N6212, 2N6213, 2N6213A, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
DLA SMD-5962-87697 REV C-2006 MICROCIRCUIT, DIGITAL, ADVANCED CMOS, OCTAL D-TYPE FLIP-FLOP WITH CLOCK ENABLE, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA MIL-PRF-19500/652 B-2008 SEMICONDUCTOR DEVICE, TRANSISTOR, HIGH VOLTAGE, FIELD EFFECT, N-CHANNEL, SILICON, TYPE 2N7387 AND 2N7387U1, JAN, JANTX, JANTXV, AND JANS
DLA SMD-5962-87654 REV C-2006 MICROCIRCUIT, DIGITAL, FAST CMOS, 1-OF-8 DECODER, TTL COMPATIBLE, MONOLITHIC SILICON
DLA SMD-5962-86071 REV C-2002 MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY, TTL, SHIFT REGISTER, MONOLITHIC SILICON
DLA SMD-5962-86074 REV C-2002 MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY, TTL, REGISTER, MONOLITHIC SILICON
DLA MIL-PRF-19500/652 C-2013 SEMICONDUCTOR DEVICE, TRANSISTOR, HIGH VOLTAGE, FIELD EFFECT, N-CHANNEL, SILICON, TYPE 2N7387 AND 2N7387U1, JAN, JANTX, JANTXV, AND JANS
DLA SMD-5962-86072 REV D-2002 MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY, TTL, BINARY COUNTER, MONOLITHIC SILICON
DLA MIL-PRF-19500/634 C-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, N-CHANNEL SILICON, TYPES 2N7405, 2N7406, 2N7407, AND 2N7408, JANSD AND JANSR
DLA MIL-PRF-19500/705 B-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7488T3, 2N7489T3, AND 2N7490T3, JANTXVR AND JANSR
DLA MIL-PRF-19500/658 VALID NOTICE 2-2011 Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistor, P-Channel Silicon Type 2N7438, and 2N7439 JANSD and JANSR
DLA MIL-PRF-19500/706 A VALID NOTICE 1-2010 Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistor, N-Channel, Silicon Types 2N7497T2, 2N7498T2, and 2N7499T2, JANTXVR and JANSR
DLA SMD-5962-86883 REV A-2003 MICROCIRCUIT, DIGITAL, HIGH SPEED CMOS, QUAD 2-INPUT AND GATE WITH TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA MIL-PRF-19500/453 F-2011 SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-FREQUENCY TYPE 2N5109 AND 2N5109UB, JAN, JANTX, JANTXV, JANS, JANHC, JANKC JANSM, JANSD, JANSP, JANSL, JANSR, JANSF, JANSG, AND JANSH
DLA SMD-5962-87698 REV A-2003 MICROCIRCUIT, DIGITAL, ADVANCED CMOS, DUAL 4-INPUT MULTIPLEXER, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-85504 REV D-2005 MICROCIRCUIT, DIGITAL, HIGH SPEED CMOS, 3-TO-8 LINE DECODER WITH TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-86831 REV B-2007 MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, QUAD 2-INPUT NAND GATE WITH TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-86852 REV A-2003 MICROCIRCUIT, DIGITAL, HIGH SPEED CMOS, QUAD 2- INPUT OR GATE WITH TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-86867 REV D-2003 MICROCIRCUIT, DIGITAL, HIGH SPEED CMOS, OCTAL TRANSPARENT LATCH WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-86890 REV C-2006 MICROCIRCUIT, DIGITAL, HIGH SPEED CMOS, HEX SCHMITT TRIGGER, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-90934 REV A-1999 MICROCIRCUITS, DIGITAL, ADVANCED CMOS, QUAD 2-PORT REGISTER, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-90984 REV A-2006 MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, DUAL DECADE RIPPLE COUNTER, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-96897 REV C-2005 MICROCIRCUIT, LINEAR, OPERATIONAL AMPLIFIER, SINGLE, HIGH VOLTAGE, MOSFET, MONOLITHIC SILICON
DLA MIL-PRF-19500/683 C-2008 SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT, N-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TYPE 2N7467U2, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
DLA MIL-PRF-19500/747-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), SILICON, TYPE 2N7504T2, JANTXVR, JANTXVF, JANTXVG, JANTXVH, JANSF, JANSG, JANSR, AND JANSH
DLA MIL-PRF-19500/689 VALID NOTICE 2-2011 Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistor, N-Channel Silicon Types 2N7512, 2N7513, and 2N7514 JANTXVD, R and JANSD, R
DLA MIL-PRF-19500/687 B VALID NOTICE 1-2013 Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistor, N-Channel Silicon, Types 2N7509, 2N7510, and 2N7511, JANTXVD, R and JANSD, R
DLA SMD-5962-85130 REV C-2003 MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, OCTAL BUFFER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA MIL-PRF-19500/741 A VALID NOTICE 1-2013 Semiconductor Device, Field Effect, Radiation Hardened (Total Dose and Single Event Effects) Transistor Die, N-Channel and PChannel, Silicon, Various Types, JANHC and JANKC
DLA SMD-5962-87553 REV B-2005 MICROCIRCUIT, DIGITAL, ADVANCED CMOS, DUAL 1-OF-4 DECODER/DEMULTIPLEXER, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-87556 REV D-2005 MICROCIRCUIT, DIGITAL, ADVANCED CMOS, OCTAL TRANSPARENT LATCH WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-91732-1993 MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, 3-TO-8 LINE DECODER/DEMULTIPLEXOR, TTL COMPATIBLE, MONOLITHIC SILICON
DLA SMD-5962-87663 REV F-2007 MICROCIRCUIT, DIGITAL, ADVANCED CMOS, OCTAL TRANSCEIVER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-92018 REV A-2007 MICROCIRCUIT, DIGITAL, ADVANCED CMOS, 16-BIT BUS DRIVERS WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-92022 REV A-2004 MICROCIRCUIT, DIGITAL, ADVANCED CMOS, 16-BIT BUS DRIVER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-92023 REV A-2004 MICROCIRCUIT, DIGITAL, ADVANCED CMOS, 16-BIT BUS TRANSCEIVER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-92148 REV D-1999 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, OCTAL TRANSCEIVER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-85506 REV D-2003 MICROCIRCUIT, DIGITAL, HIGH SPEED CMOS, OCTAL BUS TRANSCEIVER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-90702 REV A-2006 MICROCIRCUIT, DIGITAL, HIGH SPEED CMOS, QUAD 2-INPUT NONINVERTING MULTIPLEXER, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-90703 REV A-2006 MICROCIRCUIT, DIGITAL, HIGH SPEED CMOS, QUAD 2-INPUT INVERTING MULTIPLEXER, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-95683 REV B-2000 MICROCIRCUIT, DIGITAL, RADIATION HARDENED HIGH SPEED CMOS, QUAD 2-INPUT AND GATE, TTL COMPATIBLE, MONOLITHIC SILICON
DLA SMD-5962-04228-2004 MICROCIRCUITS, DIGITAL, ADVANCED CMOS, UP/DOWN BINARY COUNTER WITH PRESET AND RIPPLE CLOCK, TTL COMPLATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-92024 REV A-2004 MICROCIRCUIT, DIGITAL, ADVANCED CMOS, 16-BIT D-TYPE TRANSPARENT LATCH WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-85505 REV C-2005 MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, OCTAL BUFFER/LINE DRIVER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-90758 REV A-2006 MICROCIRCUIT, DIGITAL, HIGH SPEED CMOS, DUAL 2-BIT BISTABLE TRANSPARENT LATCH, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA MIL-PRF-19500/739-2006 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) QUAD TRANSISTOR, N-CHANNEL AND P-CHANNEL, SILICON, TYPES 2N7518 AND 2N7518U, JANTXVR, F, AND JANSR, F
DLA MIL-PRF-19500/700 A VALID NOTICE 1-2010 Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistor, N-Channel, Silicon, Types 2N7494U5, 2N7495U5, and 2N7496U5, JANTXVR, F, G, and H, and JANSR, F, G, and H
DLA SMD-5962-95721 REV B-2000 MICROCIRCUIT, DIGITAL, RADIATION HARDENED HIGH SPEED CMOS, TRIPLE 3-INPUT AND GATE, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-95732 REV B-2000 MICROCIRCUIT, DIGITAL, RADIATION HARDENED HIGH SPEED CMOS, HEX INVERTER, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-95734 REV B-2000 MICROCIRCUIT, DIGITAL, RADIATION HARDENED HIGH SPEED CMOS, TRIPLE 3-INPUT NOR GATE, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-95735 REV B-2000 MICROCIRCUIT, DIGITAL, RADIATION HARDENED HIGH SPEED CMOS, 8-INPUT NAND GATE, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-95736 REV B-2000 MICROCIRCUIT, DIGITAL, RADIATION HARDENED HIGH SPEED CMOS, QUAD 2-INPUT OR GATE, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-95760 REV B-2000 MICROCIRCUIT, DIGITAL, RADIATION HARDENED HIGH SPEED CMOS, DUAL 4-INPUT NOR GATE, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-95765 REV B-2000 MICROCIRCUIT, DIGITAL, RADIATION HARDENED HIGH SPEED CMOS, TRIPLE 3-INPUT NAND GATE, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-95766 REV A-1998 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, HIGH SPEED CMOS, DUAL 4-INPUT AND GATE, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-87656 REV B-2006 MICROCIRCUIT, DIGITAL, FAST CMOS, OCTAL D-TYPE FLIP-FLOP WITH CLEAR, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-91723 REV B-2003 MICROCIRCUIT, DIGITAL, ADVANCED CMOS, 4-BIT PRESETTABLE BINARY COUNTER, SYNCHRONOUS RESET, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-92025 REV A-2004 MICROCIRCUIT, DIGITAL, ADVANCED CMOS, 16-BIT D-TYPE EDGE-TRIGGERED FLIP-FLOP WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-91610 REV B-2007 MICROCIRCUIT, DIGITAL, ADVANCED CMOS, 9-BIT D FLIP-FLOP, POSITIVE EDGE TRIGGERED, WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-91611 REV A-2000 MICROCIRCUITS, DIGITAL, ADVANCED CMOS, 8-BIT D FLIP-FLOP, POSITIVE EDGE-TRIGGERED WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-87655 REV B-2003 MICROCIRCUIT, DIGITAL, FAST CMOS, INVERTING OCTAL LINE DRIVER/BUFFER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-91722 REV D-2004 MICROCIRCUIT, DIGITAL, ADVANCED CMOS, 4-BIT PRESETTABLE BINARY COUNTER, ASYNCHRONOUS RESET, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-85507 REV E-2003 MICROCIRCUIT, DIGITAL, HIGH SPEED CMOS, OCTAL D-TYPE FLIP-FLOP WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-90706 REV A-2006 MICROCIRCUIT, DIGITAL, HIGH SPEED CMOS, NONINVERTING HEX BUFFER/LINE DRIVER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-95614 REV A-2008 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, SCAN TEST DEVICE WITH 18-BIT BUS TRANSCEIVER, THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-95733 REV B-2000 MICROCIRCUIT, DIGITAL, RADIATION HARDENED HIGH SPEED CMOS, DUAL 4-INPUT NAND GATE, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-95749 REV B-2000 MICROCIRCUIT, DIGITAL, RADIATION HARDENED HIGH SPEED CMOS, DUAL DECADE RIPPLE COUNTER, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-95752 REV B-2000 MICROCIRCUIT, DIGITAL, RADIATION HARDENED HIGH SPEED CMOS, QUAD 2-INPUT EXCLUSIVE NOR GATE, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-95768 REV B-2000 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, HIGH SPEED CMOS, 4-BIT MAGNITUDE COMPARATOR, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-95774 REV B-2004 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, HIGH SPEED CMOS, 4-BIT BINARY FULL ADDER WITH FAST CARRY, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-91609 REV B-2007 MICROCIRCUIT, DIGITAL, ADVANCED CMOS, 8-BIT DIAGNOSTIC REGISTER WITH THREESTATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-87631 REV C-2005 MICROCIRCUIT, DIGITAL, ADVANCED CMOS, OCTAL D-TYPE FLIP-FLOP, TTL COMPATIBLE INPUTS, THREE-STATE OUTPUTS, MONOLITHIC SILICON
DLA SMD-5962-87725 REV B-2006 MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, OCTAL D-TYPE FLIP-FLOP WITH MASTER RESET, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-90701 REV A-2006 MICROCIRCUIT, DIGITAL, HIGH SPEED CMOS, DUAL J-K FLIP-FLOP WITH SET AND RESET, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-90848 REV A-2006 MICROCIRCUIT, DIGITAL, HIGH SPEED CMOS, PRESETTABLE SYNCHRONOUS 4-BIT BINARY UP/DOWN COUNTER, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-90906 REV A-2006 MICROCIRCUIT, DIGITAL, ADVANCED CMOS, DUAL 1-OF-4 DATA SELECTORS/MULTIPLEXERS WITH THREE-STATE OUTPUTS AND TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-87525 REV F-2007 MICROCIRCUIT, DIGITAL, ADVANCED CMOS, DUAL D-TYPE FLIP-FLOP WITH PRESET AND CLEAR, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-95637 REV B-2004 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, HIGH SPEED CMOS, QUAD 2-INPUT NAND GATE, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-95737 REV A-1998 MICROCIRCUIT, DIGITAL, RADIATION HARDENED HIGH SPEED CMOS, 4-BIT BINARY RIPPLE COUNTER, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-95741 REV B-2000 MICROCIRCUIT, DIGITAL, RADIATION HARDENED HIGH SPEED CMOS, 10-TO-4 LINE PRIORITY ENCODER, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-95750 REV B-2000 MICROCIRCUIT, DIGITAL, RADIATION HARDENED HIGH SPEED CMOS, DUAL FOUR-STAGE BINARY COUNTER, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-95754 REV B-2000 MICROCIRCUIT, DIGITAL, RADIATION HARDENED HIGH SPEED CMOS, DUAL 4-INPUT MULTIPLEXER, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-95755 REV B-2000 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, HIGH SPEED CMOS, QUAD 2-INPUT MULTIPLEXER, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-95770 REV A-1998 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, HIGH SPEED CMOS, 4-BIT BINARY SYNCHRONOUS COUNTER, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-95745 REV D-2004 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, HIGH SPEED CMOS, NON-INVERTING OCTAL BUS TRANSCEIVER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-95757 REV B-2000 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, HIGH SPEED CMOS, SYNCHRONOUS 4-BIT BINARY UP/DOWN COUNTER, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-92272 REV D-2008 MICROCIRCUIT, DIGITAL, FAST CMOS, 16-BIT BIDIRECTIONAL TRANSCEIVER WITH SERIES RESISTOR AND THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS AND LIMITED OUTPUT VOLTAGE SWING, MONOLITHIC SILICON
DLA SMD-5962-86856 REV A-2003 MICROCIRCUIT, DIGITAL, HIGH SPEED CMOS, OCTAL D-TYPE LATCH WITH THREE-STATE OUTPUTS AND LS TTL COMPATIBLE INPUTS, MONOLITHIC SILICON

PL-PKN, Die Half Height

PN C89425-1992 Plastics. Determination of melting temperature of semi-crystalline polymers
PN T01207-01-1992 Semiconductor devices Discrete devices BipoLar transistors Blank detail specification for ambient-rated bipolar transistors for Iow and high-frequency amplification
PN-EN 10217-3-2019-06 P Welded steel tubes for pressure purposes -- Technical delivery conditions -- Part 3: Electric welded and submerged arc welded alloy fine grain steel tubes with specified room, elevated and low temperature properties

BE-NBN, Die Half Height

NBN A 23-114-1983

General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China, Die Half Height

GB/T 14999.7-2010 Test methods for grain sizes,primary dendrite spacing and microshrinkage of superalloy castings
GB/T 32188-2015 Test method for full width at half maximum of double crystal X-ray rocking curve of GaN single crystal substrate
GB/T 14999.6-2010 Test methods for characterizing duplex grain sizes and primary carbides distribution of superalloy forgings
GB/T 14999.4-2012 Test methods for superalloys.Part 4:Determination of characterizing banding grains and primary carbides distribution of superalloy rollings
GB/T 7576-1998 Semiconductor devices--Discrete devices. Part 7: Bipolar transistors. Section Four--Blank detail specification for case-rated bipolar transistors for high-frequency amplification
GB/T 6217-1998 Semiconductor devices--Discrete devices. Part 7: Bipolar transistors. Section One--Blank detail specification for ambient-rated bipolar transistors for low and high frequency amplification

Association Francaise de Normalisation, Die Half Height

NF A04-503:1988 Semi-products made from aluminium, copper, nickel and their alloys. Determination of grain size. Aluminium and aluminium alloys.
NF A04-505:1988 Semi-products made from aluminium, copper, nickel and their alloys. Determination of grain size. Nickel and nickel alloys.
NF A36-620-4/A1:2002 Steel forgings for pressure purposes - Part 4 : weldable fine grain steels with high proof strength.
NF B41-204-1*NF EN ISO 13383-1:2016 Fine ceramics (advanced ceramics, advanced technical ceramics) - Microstructural characterization - Part 1 : Determination of grain size and size distribution
NF A36-620-4*NF EN 10222-4+A1:2021 Steel forgings for pressure purposes - Part 4 : weldable fine grain steels with high proof strength
NF A36-620-4/IN1*NF EN 10222-4/IN1:2021 Steel forgings for pressure purposes - Part 4 : weldable fine grain steels with high proof strength
NF EN 10222-4/IN1:2021 Pièces forgées en acier pour appareils à pression - Partie 4 : aciers soudables à grains fins avec limite d'élasticité élevée
NF EN 10222-4+A1:2021 Pièces forgées en acier pour appareils à pression - Partie 4 : aciers soudables à grains fins avec limite d'élasticité élevée

Professional Standard - Electron, Die Half Height

SJ/T 10557.2-1994 Methods of crystal grain structure measurement for aluminum foil for high voltage electrolytic capacitors
SJ 50033/1-1994 Semiconductor discrete device.Detail specification for type 3DA150 high frequency and power transistor
SJ 50033/103-1996 Semiconductor discrete devices--Detail specification for Type 3DA89 high-frequency power transistor
SJ 50033/61-1995 Semiconductor discrete device.Detail specification for type 3DK6547 high-voltage and power switching transistor
SJ 50033/62-1995 Semiconductor discrete device.Detail specification for type 3DK406 high-voltage and power switching transistor
SJ 50033/159-2002 Semiconductor discrete devices Detail specification for type 3DG142 silicon UHF low-noise transistor
SJ 20059-1992 Semiconductor discrete device.Detail specification for silicon NPN high-frequency low-power transistor of type 3DG111
SJ 20060-1992 Semiconductor discrete device.Detail specification for silicon NPN high-frequency low-power transistor of type 3DG120
SJ 50033/160-2002 Semiconductor discrete devices Detail specification for type 3DG122 silicon UHF low-noise transistor
SJ 50033/158-2002 Semiconductor discrete devices Detail specification for type 3DG44 silicon UHF low-noise transistor
SJ 50033/154-2002 Semiconductor discrete devices Detail specification for type 3DG251 silicon UHF low-noise transistor
SJ 50033/75-1995 Semiconductor discrete devices.Detail specification for type 3DG135 Silicon ultra high frequency low-power transistor
SJ 50033/67-1995 Semiconductor discrete device.Detail specification for type 3DD103 high-voltage low-frequency and high-power transistor
SJ/T 11848-2022 Semiconductor discrete device 3DG2484 type NPN silicon high frequency low power transistor detailed specifications
SJ 20175-1992 Semiconductor discrete device--Detail specification for NPN silicon ultra-high frequency low-power transistor of Type 3DG918
SJ/T 11849-2022 Detailed specifications for semiconductor discrete devices 3DG3500 and 3DG3501 type NPN silicon high-frequency low-power transistors
SJ 50033/95-1995 Semiconductor discrete devices.Detail specification for type 3DG144 NPN silicon high-frequency Low-noise Low-power transistor
SJ 50033/94-1995 Semiconductor discrete devices.Detail specification for type 3DG143 NPN silicon high-frequency Low-noise Low-power transistor
SJ 50033/93-1995 Semiconductor discrete devices.Detail specification for type 3DG142 NPN silicon high-frequency Low-noise Low-power transistor
SJ 20062-1992 Semiconductor discrte device.Detail specification for silicon NPN ultra-high frequency low-noise difference match transistor of type 3DG210
SJ 20176-1992 Semiconductor discrete device--Detail specification for NPN silicon low-power high-reverse-voltage transistor of Types 3DG3439 and 3DG3440
SJ 20015-1992 Semiconductor discrete device.Detail specification for NPN silicon high-frequency low-power transistor for type 3DG130GP、GT and GCT classes
SJ 20063-1992 Semiconductor discrete device.Detail specification for silicon NPN ultra-high frequency low-noise dual-difference match transistor of type 3DG213
SJ 20016-1992 Semiconductor discrete device.Detail specification for NPN silicon low-power hiht-reverse-voltage transistor for type 3DG182GP、GT and GCT classes

Danish Standards Foundation, Die Half Height

DS/EN 10222-4:2021 Steel forgings for pressure purposes – Part 4: Weldable fine grain steels with high proof strength
DS/EN 10222-4+A1:2002 Steel forgings for pressure purposes - Part 4: Weldable fine grain steels with high proof strength
DS/IEC 747-7-4:1993 Semiconductor devices. Discrete devices. Part 7: Bipolar transistors. Section four: Blank detail specification for case-rated bipolar transistors for high-frequency amplification
DS/IEC 747-7-1:1990 Semiconductor devices. Discrete devices. Part 7: Bipolar transistors. Section one: Blank detail specification for ambient-rated bipolar transistors for low and high-frequenc amplification
DS/EN 623-3:2001 Advanced technical ceramics - Monolithic ceramics - General and textural properties - Part 3: Determination of grain size and size distribution (characterized by the Linear Intercept Method)

International Organization for Standardization (ISO), Die Half Height

ISO 13383-1:2012 Fine ceramics (advanced ceramics, advanced technical ceramics) - Microstructural characterization - Part 1: Determination of grain size and size distribution
ISO 24369:2005 Fine ceramics (advanced ceramics, advanced technical ceramics) - Determination of content of coarse particles in ceramic powders by wet sieving method

工业和信息化部, Die Half Height

SJ/T 1486-2016 Semiconductor discrete device 3CG180 type silicon PNP high frequency high back voltage low power transistor detailed specification
SJ/T 1477-2016 Semiconductor discrete device 3CG120 type silicon PNP high frequency low power transistor detailed specifications
SJ/T 1480-2016 Semiconductor discrete device 3CG130 type silicon PNP high frequency low power transistor detailed specification
SJ/T 1472-2016 Semiconductor discrete device 3CG110 type silicon PNP high frequency low power transistor detailed specification

Military Standard of the People's Republic of China-General Armament Department, Die Half Height

GJB 33/001-1989 Blank detailed specification for high frequency low power transistors for semiconductor discrete devices
GJB 33/14A-2021 Semiconductor discrete device 3DG44 type silicon ultra-high frequency low noise transistor detailed specification
GJB 33A/14-2003 Semiconductor discrete device 3DG44 type silicon ultra-high frequency low noise transistor detailed specification

Association of German Mechanical Engineers, Die Half Height

DVS 1702-1999
DVS 1702-1998 Welding procedure testings in steel construction for welded joints of high-tensile weldable fine-grained structural steels
DVS 1702-1981 Welding procedure testing in steel construction for welded joints of high-tensile weldable fine-grained structural steels; StE460 and StE690

Professional Standard - Aerospace, Die Half Height

QJ 10007/11-2008 Detail specification for 3DG182 type silicon high-frequency low-power high-backvoltage transistors for semiconductor discrete devices used in aerospace
QJ 10007/10-2008 Detail specification of 3DG122, 3DG130 silicon high-frequency low-power transistors for aerospace semiconductor discrete devices
QJ 10007/5-2008 Detail specification of 3CG110, 3CG130 silicon high-frequency low-power transistors for aerospace semiconductor discrete devices
QJ 10007/9-2008 Detail specification of 3DG100, 3DG101, 3DG111, 3DG112 type silicon high-frequency low-power transistors for aerospace semiconductor discrete devices

German Institute for Standardization, Die Half Height

DIN EN 10222-4:2001 Steel forgings for pressure purposes - Part 4: Weldable fine grain steels with high proof strength (includes Amendment A1:2001); German version EN 10222-4:1998 + A1:2001
DIN EN 10222-4/A1:2019 Steel forgings for pressure purposes - Part 4: Weldable fine grain steels with high proof strength; German and English version EN 10222-4:2017/prA1:2019
DIN EN ISO 13383-1:2016 Fine ceramics (advanced ceramics, advanced technical ceramics) - Microstructural characterization - Part 1: Determination of grain size and size distribution (ISO 13383-1:2012); German version EN ISO 13383-1:2016
DIN EN 10222-4:2017 Steel forgings for pressure purposes - Part 4: Weldable fine grain steels with high proof strength; German version EN 10222-4:2017
DIN 2302:2018-03 Welding consumables - Covered electrodes for manual metal arc welding of non-alloy and fine grain steels in a wet hyperbaric environment - Classification
DIN EN 10217-3:2019 Welded steel tubes for pressure purposes - Technical delivery conditions - Part 3: Electric welded and submerged arc welded alloy fine grain steel tubes with specified room, elevated and low temperature properties
DIN EN 10217-3:2019-08 Welded steel tubes for pressure purposes - Technical delivery conditions - Part 3: Electric welded and submerged arc welded alloy fine grain steel tubes with specified room, elevated and low temperature properties; German version EN 10217-3:2019

European Committee for Standardization (CEN), Die Half Height

EN 10222-4:1998 Steel Forgings for Pressure Purposes - Part 4: Weldable Fine-Grain Steels with High Proof Strength (Incorporates Amendment A1: 2001)

Lithuanian Standards Office , Die Half Height

LST EN 10222-4-2000 Steel forgings for pressure purposes - Part 4: Weldable fine grain steels with high proof strength
LST EN 10222-4-2000/A1-2003 Steel forgings for pressure purposes - Part 4: Weldable fine grain steels with high proof strength
LST EN 10222-4+A1-2021 Steel forgings for pressure purposes - Part 4: Weldable fine grain steels with high proof strength
LST EN 623-3-2002 Advanced technical ceramics - Monolithic ceramics - General and textural properties - Part 3: Determination of grain size and size distribution (characterized by the Linear Intercept Method)

IT-UNI, Die Half Height

UNI EN 10222-4-2021 Steel forgings for pressure purposes - Part 4: Weldable fine grain steels with high proof strength
EC 1-2021 UNI EN 10217-3-2021 Welded steel tubes for pressure purposes - Technical delivery conditions - Part 3: Electric welded and submerged arc welded alloy fine grain steel tubes with specified room, elevated and low temperature properties

AENOR, Die Half Height

UNE-EN 10222-4:2017 Steel forgings for pressure purposes - Part 4: Weldable fine grain steels with high proof strength

ES-UNE, Die Half Height

UNE-EN 10222-4:2017+A1:2022 Steel forgings for pressure purposes - Part 4: Weldable fine grain steels with high proof strength
UNE-EN 10217-3:2019 Welded steel tubes for pressure purposes - Technical delivery conditions - Part 3: Electric welded and submerged arc welded alloy fine grain steel tubes with specified room, elevated and low temperature properties

Korean Agency for Technology and Standards (KATS), Die Half Height

KS C IEC 60747-7-4:2006 Semiconductor devices－Discrete devices－Part 7：Bipolar transistors－Section Four：Blank detail specification for case-rated bipolar transistors for high-frequency amplification
KS C IEC 60747-7-4-2006(2021) Semiconductor devices－Discrete devices－Part 7：Bipolar transistors－Section Four：Blank detail specification for case-rated bipolar transistors for high-frequency amplification
KS C IEC 60747-7-4-2006(2016) Semiconductor devices－Discrete devices－Part 7：Bipolar transistors－Section Four：Blank detail specification for case-rated bipolar transistors for high-frequency amplification
KS C IEC 60747-7-1:2006 Semiconductor devices－Discrete devices－Part 7：Bipolar transistors－Section One：Blank detail specification for ambient-rated bipolar transistors for low and high-frequency amplification
KS C IEC 60747-7-1-2006(2016) Semiconductor devices－Discrete devices－Part 7：Bipolar transistors－Section One：Blank detail specification for ambient-rated bipolar transistors for low and high-frequency amplification
KS C IEC 60747-7-1-2006(2021) Semiconductor devices－Discrete devices－Part 7：Bipolar transistors－Section One：Blank detail specification for ambient-rated bipolar transistors for low and high-frequency amplification
KS C IEC 61788-9-2016(2021) Superconductivity – Part 9: Measurements for bulk high temperature superconductors – Trapped flux density of large grain oxide superconductors
KS D ISO 9327-4-2003(2008) Steel forgings and rolled or forged bars for pressure purposes－Technical delivery conditions－Part 4：Weldable fine grain steels with high proof strength
KS C IEC 61788-9:2016 Superconductivity – Part 9: Measurements for bulk high temperature superconductors – Trapped flux density of large grain oxide superconductors
KS D ISO 9328-4-2003(2013) Steel plates and strips for pressure purposes－Technical delivery conditions－Part 4：Weldable fine grain steels with high proof stress supplied in the normalized or quenched and tempered condition

AT-ON, Die Half Height

ONORM M 7824-1986 Electrodes for Joint welding ofhigh tensile fine-grained steels; basic type covered electrodes; Classification, designation, technical specifications

CEN - European Committee for Standardization, Die Half Height

DD ENV 623-3-1993 Advanced Technical Ceramics - Monolithic Ceramics - General and Textural Properties - Part 3: Determination of Grain Size
EN 623-3:2001 Advanced Technical Ceramics - Monolithic Ceramics - General and Textural Properties - Part 3: Determination of Grain Size and Size Distribution (Characterized by the Liner Intercept Method)

U.S. Military Regulations and Norms, Die Half Height

ARMY MIL-PRF-55310/27 D-2008 OSCILLATOR, CRYSTAL CONTROLLED, TYPE 1 (CRYSTAL OSCILLATOR (XO)), 1.0 MHz THROUGH 85 MHz, HERMETIC SEAL, SQUARE WAVE, HIGH SPEED CMOS
ARMY MIL-PRF-55310/32 B-2008 OSCILLATOR, CRYSTAL CONTROLLED, TYPE 1 (CRYSTAL OSCILLATOR (XO)), 1.544 MHz THROUGH 125 MHz, HERMETIC SEAL, SQUARE WAVE, ADVANCED CMOS
ARMY MIL-PRF-55310/31 A-2010 OSCILLATOR, CRYSTAL CONTROLLED, TYPE 1 (CRYSTAL OSCILLATOR (XO)), 0.75 MHz THROUGH 200 MHz, HERMETIC SEAL, SQUARE WAVE, ADVANCED CMOS
ARMY MIL-PRF-55310/33 B-2010 OSCILLATOR, CRYSTAL CONTROLLED, TYPE 1 (CRYSTAL OSCILLATOR (XO)), 500 KHz THROUGH 85 MHz, HERMETIC SEAL, CMOS

CZ-CSN, Die Half Height

CSN 35 8745-1973 Semiconductor devices. Transistore. Measurement of open-circuit reverse voltage transfer ratio and tinie coefíicient at high frequencies

中华人民共和国国家质量监督检验检疫总局、中国国家标准化管理委员会, Die Half Height

GB/T 30537-2014 Superconductivity―Measurements for bulk high temperature superconductors―Trapped flux density of large grain oxide superconductors

Taiwan Provincial Standard of the People's Republic of China, Die Half Height

CNS 5545-1988 Environmental Testing Methods and Endurance Testing Methods for Discrate Semiconductor Devices Reverse Bias Test of Transistor Under High Temperature)
CNS 5546-1988 Environmental Testing Methods and Endurance Testing Methods for Discrete Semiconductor Devices (Reverse Bias Test of Field Effect Transistor Under High Temperature)

TH-TISI, Die Half Height

TIS 1868-1999 Semiconductor devices - discrete devices part 7:bipolar transistors section 4:blank detail specification for case-rated bipolar transistors for high-frequency amplification
TIS 1974-2000 Semiconductor devices discrete devices part 6:thyristors section 2:blank detail specification for bidirectional triode thyristors(triacs),ambient or case-rated,up to 100 a
TIS 1865-1999 Semiconductor devices-discrete devices part 7:bipolar transistors section 1:blank detail specification for ambient-rated bipolar transistors for low and high-frequency amplification
TIS 1973-2000 Semiconductor devices discrete devices part 6:thyristors section 1:blank detail specification for reverse blocking triode thyristors,ambient and case-rated,up to 100 a

KR-KS, Die Half Height

KS C IEC 61788-9-2016 Superconductivity – Part 9: Measurements for bulk high temperature superconductors – Trapped flux density of large grain oxide superconductors

IECQ - IEC: Quality Assessment System for Electronic Components, Die Half Height

QC 750107-1991 Semiconductor Devices Discrete Devices Part 7: Bipolar Transistors Section Four - Blank Detail Specification for Case-Rated Transistors for High- Frequency Amplification (IEC 747-7-4 ED 1)
QC 750112-1987 Semiconductor Devices Discrete Devices Part 8: Field-Effect Transistors Section One - Blank Detail Specification for Single-Gate Field- Effect Transistors@ up to 5W and 1 GHz (IEC 747-8-1 ED 1)
QC 750111-1991 Semiconductor Devices Discrete Devices Part 6: Thyristors Section Two - Blank Detail Specification for Bidirectional Triode Thyristors (Triacs)@ Ambient or Case- Rated@ up to 100A (IEC 747-6-2 ED 1)
QC 750110-1989 Semiconductor Devices Discrete Devices Part 6: Thyristors Section One - Blank Detail Specification for Reverse Blocking Triode Thyristors@ Ambient and Case- Rated@ up to 100A (IEC 747-6-1 ED 1)
QC 750102-1989 Semiconductor Devices Discrete Devices Part 7: Bipolar Transistors Section One - Blank Detail Specification for Ambient-Rated Bipolar Transistors for Low and High- Frequency Amplification (IEC 747-7-1 ED 1)

(U.S.) Ford Automotive Standards, Die Half Height

FORD WSS-M2A177-A2-2014 ALUMINUM ALLOY, EXTRUSION, HEAT TREATABLE, SEAMLESS, HIGH STRENGTH, GRAIN SIZE CONTROLLED ***TO BE USED WITH FORD WSS-M99P1111-A*** (Shown on FORD WSS-M2A177-A1)
FORD WSS-M2A177-A2-2012 ALUMINUM ALLOY, EXTRUSION, HEAT TREATABLE, SEAMLESS, HIGH STRENGTH, GRAIN SIZE CONTROLLED ***TO BE USED WITH FORD WSS-M99P1111-A*** Shown on FORD WSS-M2A177-A1