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silicon crystal

silicon crystal, Total:69 items.

In the international standard classification, silicon crystal involves: Electricity. Magnetism. Electrical and magnetic measurements, Testing of metals, Semiconducting materials, Non-ferrous metals, Insulating fluids, Non-metalliferous minerals, Solar energy engineering, Semiconductor devices, Glass, Galvanic cells and batteries, Optoelectronics. Laser equipment, Integrated circuits. Microelectronics, Energy and heat transfer engineering in general, Vocabularies, Ceramics, Nuclear energy engineering.

Korean Agency for Technology and Standards (KATS), silicon crystal

• KS C 0256-2002(2017) Testing method of resistivity for silicon crystals and silicon wafers with four - point probe
• KS C 0256-2002(2022) Testing method of resistivity for silicon crystals and silicon wafers with four - point probe
• KS D 0258-2012 Test methods of crystalline defects in silicon by preferential etch techniques
• KS D 0078-2008 Test method for determination of impurity concentrations in silicon crystal by photoluminescence spectroscopy
• KS D 0078-2008(2018) Test method for determination of impurity concentrations in silicon crystal by photoluminescence spectroscopy
• KS D 0258-2012(2022) Test methods of crystalline defects in silicon by preferential etch techniques
• KS D 0257-2002 Measuring of minority - carrier lifetime in silicon single crystal by photoconductive decay method

General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China, silicon crystal

• GB/T 1554-1995 Test method for crystallographic perfection of silicon by preferential etch techniques
• GB/T 1554-2009 Testing method for crystallographic perfection of silicon by preferential etch techniques
• GB/T 14144-1993 Test method for determination of radial interstitial oxygen variation in silicon
• GB/T 14144-2009 Testing method for determination of radial interstitial oxygen variation in silicon
• GB/T 1557-1989 The method of determining interstitial oxygen content in silicon by infrared absorption
• GB/T 1557-2006 The method of determining interstitial oxygen content in silicon by infrared absorption
• GB/T 31958-2023 Substrate glass for amorphous silicon thin film transistor liquid crystal display

Japanese Industrial Standards Committee (JISC), silicon crystal

• JIS H 0602:1995 Testing method of resistivity for silicon crystals and silicon wafers with four-point probe
• JIS H 0609:1994 Test methods of crystalline defects in silicon by preferential etch techniques
• JIS H 0615:2021 Test method for determination of impurity concentrations in silicon crystal by photoluminescence spectroscopy
• JIS H 0615:1996 Test method for determination of impurity concentrations in silicon crystal by photoluminescence spectroscopy
• JIS H 0609:1999 Test methods of crystalline defects in silicon by preferential etch techniques

国家市场监督管理总局、中国国家标准化管理委员会, silicon crystal

• GB/T 1557-2018 Test method for determining interstitial oxygen content in silicon by infrared absorption
• GB/T 37051-2018 Test method for determination of crystal defect density in PV silicon ingot and wafer
• GB/T 37896-2019 Lightweight crystalline silicon photovoltaic (PV) laminated glass

Defense Logistics Agency, silicon crystal

• DLA MIL-PRF-19500/370 G-2008 SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER, TYPE 2N3442, JAN, JANTX, AND JANTXV
• DLA MIL-PRF-19500/210 B NOTICE 1-1999 SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, PHOTO TYPE 2N986
• DLA MIL-S-19500/216 A VALID NOTICE 3-2004 SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON TYPE 2N1051
• DLA SMD-5962-90889 REV C-2008 MICROCIRCUIT, DIGITAL, BIPOLAR CMOS, QUADRUPLE BUS BUFFER GATE, TTL COMPATIBLE, MONOLITHIC SILICON
• DLA MIL-PRF-19500/139 B NOTICE 2-1999 SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON TYPE JAN-2N1119
• DLA MIL-PRF-19500/652 B-2008 SEMICONDUCTOR DEVICE, TRANSISTOR, HIGH VOLTAGE, FIELD EFFECT, N-CHANNEL, SILICON, TYPE 2N7387 AND 2N7387U1, JAN, JANTX, JANTXV, AND JANS
• DLA DSCC-DWG-04029-2005 SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH POWER TYPE 2N5927
• DLA DSCC-DWG-04030-2005 SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH POWER TYPE 2N5926
• DLA DSCC-DWG-99009 REV A-2004 SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH POWER TYPE 2N5241
• DLA MIL-S-19500/425 VALID NOTICE 2-2004 SEMICONDUCTOR DEVICE, TRANSISTOR, PN, SILICON, UNIJUNCTION JAN2N5431, AND JANTX2N5431
• DLA MIL-PRF-19500/74 E NOTICE 1-1999 SEMICONDUCTOR DEVICE, TRANSISTORS, NPN, SILICON, MEDIUM POWER, TYPES 2N497, 2N498, 2N656 AND 2N657
• DLA MIL-PRF-19500/597 D VALID NOTICE 1-2008 Semiconductor Device, Transistors, Quad, Field Effect, NChannel, Silicon, Type 2N7334, JAN, JANTX, JANTXV, JANS, JANHC, JANKCA2N7334, and JANHCA2N7334
• DLA MIL-PRF-19500/704 B-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7485U3, 2N7486U3, AND 2N7487U3, JANTXVR AND JANSR
• DLA MIL-S-19500/288 (2)-1966 SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON TYPE 2N2377
• DLA MIL-PRF-19500/357 K (1)-2008 SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, AMPLIFIER, TYPES 2N3634 THROUGH 2N3637, 2N3634UB THROUGH 2N3637UB, 2N3634L THROUGH 2N3637L, JAN, JANTX, JANTXV, JANS, JANSM, JANSD, JANSP, JANSL, JANSR, JANSF, JANSG, JANSH, JANHCA, JANKCA, JANKCAM, JANKCAD
• DLA MIL-PRF-19500/75 B NOTICE 1-1999 SEMICONDUCTOR DEVICE, TRANSISTORS, PN, SILICON UNIJUNCTION TYPES 2N2417A THROUGH 2N2422A, AND TX2N2417A THROUGH TX2N2422A
• DLA SMD-5962-89876 REV B-2002 MICROCIRCUIT, LINEAR, TRANSISTOR ARRAY, MONOLITHIC SILICON
• DLA MIL-PRF-19500/534 F-2008 SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER, TYPES 2N5002 AND 2N5004, JAN, JANTX, JANTXV, JANS, JANSM, JANSD, JANSP, JANSL, JANSR, JANSF, JANSG, JANSH, JANHCB, JANKCB, JANKCBM, JANKCBD, JANKCBP, JANKCBL, JANKCBR, JANKCBF, JANKCBG, AND JANKCBH
• DLA MIL-PRF-19500/710 A-2008 SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER, TYPES 2N6674T1, 2N6674T3, 2N6675T1, AND 2N6675T3, JAN, JANTX, AND JANTXV
• DLA SMD-5962-87777 REV B-2001 MICROCIRCUIT, LINEAR, TRANSISTOR ARRAYS/MATCHED PAIR, MONOLITHIC SILICON
• DLA MIL-S-19500/536 VALID NOTICE 3-2004 SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER TYPES 2N6671, AND 2N6673 JAN, JANTX, AND JANTXV

RO-ASRO, silicon crystal

• STAS 9675-1974 CRYSTALLINE SILICON

RU-GOST R, silicon crystal

• GOST 28976-1991 Photovoltaic devices of crystalline silicon. Procedures for temperature and irradiance corrections to measured current voltage characteristics

Professional Standard - Electron, silicon crystal

• SJ/T 2217-2014 Technical specification for phototransistor of silicon
• SJ 50033.40-1994 Detail specification for type GT11 semiconductor sililcon NPN photo-transistor
• SJ/T 11550-2015 Tin-based solder dipping ribbon used for crystalline silicon photovoltaic (PV) modules

Association Francaise de Normalisation, silicon crystal

• NF C57-203*NF EN 50513:2009 Solar wafers - Data sheet and product information for crystalline silicon wafers for solar cell manufacturing.

Hebei Provincial Standard of the People's Republic of China, silicon crystal

• DB13/T 1288-2010 Crystalline silicon solar cells
• DB13/T 2255-2015 Crystalline silicon solar all-glass module
• DB13/T 1289-2010 Ground-use crystalline silicon solar cell modules

Group Standards of the People's Republic of China, silicon crystal

• T/CPIA 0037-2022 Specifications for Photovoltaic Crystalline Wafers
• T/SZBX 061-2021 Crystalline silicon photovoltaic module with low degradation
• T/ZZB 0091-2016 Crystalline silicon terrestrial photovoltaic(PV) modules
• T/CSTM 00584-2022 Crystalline silicon photovoltaic roofing tiles in buildings
• T/CPIA 0043-2022 Guidelines for Scrapping of Crystalline Silicon Photovoltaic Modules
• T/CPIA 0048.1-2022 Manufacturing guidelines for crystalline silicon standard photovoltaic cells for production lines Part 1: Homogeneous crystalline silicon photovoltaic cells
• T/CPIA 0046-2022 Positioning tape for crystalline silicon photovoltaic modules
• T/GDKJ 0029-2023 Crystalline silicon solar cell front silver paste
• T/CSTM 00035-2020 Cerium-doped yttrium oxyorthosilicate scintillation crystal

工业和信息化部, silicon crystal

• XB/T 516-2021 Yttrium lutetium silicate crystal recycling material

German Institute for Standardization, silicon crystal

• DIN 50443-1:1988 Testing of materials for use in semiconductor technology; detection of crystal defects and inhomogeneities in silicon single crystals by X-ray topography
• DIN 50434:1986 Testing of materials for semiconductor technology; detection of crystal defects in monocrystalline silicon using etching techniques on {111} and {100} surfaces

British Standards Institution (BSI), silicon crystal

• BS EN 50513:2009 Solar wafers - Data sheet and product information for crystalline silicon wafers for solar cell manufacturing

Danish Standards Foundation, silicon crystal

• DS/EN 50513:2009 Solar wafers - Data sheet and product information for crystalline silicon wafers for solar cell manufacturing

Lithuanian Standards Office , silicon crystal

• LST EN 50513-2009 Solar wafers - Data sheet and product information for crystalline silicon wafers for solar cell manufacturing

AENOR, silicon crystal

• UNE-EN 50513:2011 Solar wafers - Data sheet and product information for crystalline silicon wafers for solar cell manufacturing

Professional Standard - Building Materials, silicon crystal

• JC/T 2148-2012 Langasite piezoelectric crystal

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