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quadrupole low frequency

quadrupole low frequency, Total:351 items.

In the international standard classification, quadrupole low frequency involves: Semiconductor devices, Corrosion of metals, Soil quality. Pedology, Power stations in general, Electronic tubes, Radiocommunications, Mining equipment, Electric traction equipment, Radiation measurements, Electromagnetic compatibility (EMC), Electricity. Magnetism. Electrical and magnetic measurements, Earthworks. Excavations. Foundation construction. Underground works, Radiation protection, Integrated circuits. Microelectronics, Networking, Testing of metals, Earth-moving machinery, Agricultural machines, implements and equipment, Construction equipment, Electrical engineering in general, Components and accessories for telecommunications equipment, Electrical and electronic testing, Electrical wires and cables, Open systems interconnection (OSI), Electromechanical components for electronic and telecommunications equipment, Aids for disabled or handicapped persons, Acoustics and acoustic measurements, Insulation, Integrated Services Digital Network (ISDN), Electronic components in general, Flexible drives and transmissions, Mechanical structures for electronic equipment, Interface and interconnection equipment, Power transmission and distribution networks, Insulating materials.

Professional Standard - Electron, quadrupole low frequency

SJ 2356-1983 Detail specification for silicon PNP low frequency low voltage high power transistors,Type 3CD347
SJ 1986-1981 Detail specification for low frequency low noise field-effect transistors,Type CS13
SJ 1988-1981 Detail specification for low frequency low noise field-effect transistors,Type CS15
SJ 1984-1981 Detail specification for low frequency low noise field-effect transistors,Type CS11
SJ 1987-1981 Detail specification for low frequency low noise field-effect transistors,Type CS14
SJ 1983-1981 Detail specification for low frequency low noise field-effect transistors,Type CS10
SJ 1985-1981 Detail specification for low frequency low noise field-effect transistors,Type CS12
SJ 2362-1983 Detail specification for silicon PNP low frequency low voltage high power transistors,Type 3CD159 and 3CD160
SJ 2363-1983 Detail specification for silicon PNP low frequency low voltage high power transistors,Type 3CD162 and 3Cd362
SJ 2364-1983 Detail specification for silicon PNP low frequency low voltage high power transistors,Type 3Cd164 and 3CD364
SJ 2365-1983 Detail specification for silicon PNP low frequency low voltage high power transistors,Type 3CD167 and 3CD367
SJ 1690-1980 Detail specification for silicon NPN low-frequency high power transistors,Type 3DD206
SJ 1692-1980 Detail specification for silicon NPN low-frequency high power transistors,Type 3DD208
SJ 1693-1980 Detail specification for silicon PNP low-frequency high power transistors,Type 3AD150
SJ 1686-1980 Detail specification for silicon NPN low-frequency high power transistors,Type 3DD202
SJ 1689-1980 Detail specification for silicon NPN low-frequency high power transistors,Type 3DD205
SJ 1994-1981 Detail specification for N channel junction pair field-effect transistors,Type CS24
SJ 2002-1981 Detail specification for N channel junction pair field-effect transistors,Type CS32
SJ 2003-1981 Detail specification for N channel junction pair field-effect transistors,Type CS33
SJ 2001-1981 Detail specification for N channel junction pair field-effect transistors,Type CS31
SJ 1995-1981 Detail specification for N channel junction pair field-effect transistors,Type CS25
SJ 1997-1981 Detail specification for N channel junction pair field-effect transistors,Type CS27
SJ 1998-1981 Detail specification for N channel junction pair field-effect transistors,Type CS28
SJ 2000-1981 Detail specification for N channel junction pair field-effect transistors,Type CS30
SJ 2004-1981 Detail specification for N channel junction pair field-effect transistors,Type CS34
SJ 1993-1981 Detail specification for N channel junction pair field-effect transistors,Type CS23
SJ 1996-1981 Detail specification for N channel junction pair field-effect transistors,Type CS26
SJ 1999-1981 Detail specification for N channel junction pair field-effect transistors,Type CS29
SJ 1974-1981 Detail specification for low frequency field-effect transistors,Type CS1
SJ 1975-1981 Detail specification for low frequency field-effect transistors,Type CS2
SJ 1976-1981 Detail specification for low frequency field-effect transistors,Type CS3
SJ 2358-1983 Detail specification for silicon PNP low frequency low voltage high power transistors,Type 3CD151,3CD152 and 3CD351
SJ 2359-1983 Detail specification for silicon PNP low frequency low voltage high power transistors,Type 3CD153,3CD154 and 3CD353
SJ 2360-1983 Detail specification for silicon PNP low frequency low voltage high power transistors,Type 3CD155,3CD156 and 3CD355
SJ 2361-1983 Detail specification for silicon PNP low frequency low voltage high power low frequency low voltage high power transistors,Type 3CD157,3CD158 and 3CD357
SJ 2357-1983 Detail specification for silicon PNP low frequency low voltage high power transistors,Type 3CD149,3CD150 and 3CD349
SJ 1990-1981 Detail specification for N channel junction pair field-effect transistors,Type CS20
SJ 1991-1981 Detail specification for N channel junction pair field-effect transistors,Type CS21
SJ 1992-1981 Detail specification for N channel junction pair field-effect transistors,Type CS22
SJ 1989-1981 Detail specification for Nchannel junction pair field-effect transistors,Type CS19
SJ 2366-1983 Detail specification for silicon PNP low frequency high voltage high power transistors,Type 3CD447
SJ/T 9167.1-1993 Low-voltage video products without cathode-ray-tube displays
SJ 934-1975 Detail specification for silicon NPN low frequency high power high reversse voltage transistors,Type 3DD100
SJ 2376-1983 Detail specification for silicon PNP epitaxial planar low frequency high power transistors,Type 3CD647
SJ 779-1974 Detail specification for silicon NPN epitaxial planar low-frequency high power transistors,Type 3DD71
SJ 781-1974 Detail specification for silicon NPN epitaxial planar low-frequency high power transistors,Type 3DD73
SJ 774-1974 Detail specification for silicon NPN alloy diffused low-frequency high power transistors,Type 3DD64
SJ 2372-1983 Detail specification for silicon PNP low frequency high voltage high power transistors,Type 3CD259 and 3CD260
SJ 2373-1983 Detail specification for silicon PNP low frequency high voltage high power transistors,Type 3CD262 and 3CD462
SJ 2374-1983 Detail specification for silicon PNP low frequency high voltage high power transistors,Type 3CD264,3CD464
SJ 768-1974 Detail specification for silicon NPN alloy diffused low-frequency high power transistors,Type 3DD55
SJ 935-1975 Detail specification for silicon NPN low frequency high power high reverse voltage transistors,Type 3DD101 and 3DD102
SJ 770-1974 Detail specification for silicon NPN alloy diffused low-frequency high power transistors,Type 3DD58
SJ 772-1974 Detail specification for silion NPN alloy diffused low-frequency high power transistors,Type 3DD61
SJ 776-1974 Detail specification for silicon NPN alloy diffused low-frequency high power transistors,Type 3DD67
SJ 778-1974 Detail specification for silicon NPN alloy diffused low-frequency high power transistors,Type 3DD70
SJ 780-1974 Detail specification for silicon NPN alloy diffused low-frequency high power transistors,Type 3DD72
SJ 2375-1983 Detail specification for silicon PNP low frequency high voltage high power transistors,Type 3CD267 and 3CD467
SJ 936-1975 Detail specification for silicon NPN low frequency high power high reverse voltage transistors,Type 3DD103 and 3DD104
SJ 766-1974 Detail specification for silicon NPN alloy diffused low-frequency high power transistors,Type 3DD52
SJ 2382-1983 Detail specification for silicon PNP epitaxial planar low frequency high power transistors,Type 3CD559 and 3CD560
SJ 2367-1983 Detail specification for silicon PNP low frequency high voltage high power transistors,Type 3CD249,3CD250 and 3CD449
SJ 2368-1983 Detail specification for silicon PNP low frequncy high voltage high power transistors,Type 3CD251,3CD252 and 3CD451
SJ 2369-1983 Detail specification for silicon PNP low frequency high voltage high power transistors,Type 3CD253,3CD254 and 3CD453
SJ 2370-1983 Detail specification for silicon PNP low frequency high voltage high power transistors,Type 3CD255,3CD256 and 3CD455
SJ 2371-1983 Detail specification for silicon PNP low frequency high voltage high power transistors,Type 3CD257,3CD258 and 3CD457
SJ 765-1974 Detail specification for silicon NPN eqitaxial planar low-frequency high power transistors,Type 3DD50 and 3DD51
SJ 1636-1980 Detail specification for silicon NPN diffused mesa low-frequency high power transistors,Type 3DD151 and 3DD152
SJ 1637-1980 Detail specification for silicon NPN diffused mesa low-frequency high power transistors,Type 3DD153 and 3DD154
SJ 1638-1980 Detail specification for silicon NPN diffused mesa low-frequency high power transistors,Type 3DD155 and 3DD156
SJ 1639-1980 Detail specification for silicon NPN diffused mesa low-frequency high power transistors,Type 3DD157 and 3DD158
SJ 1641-1980 Detail specification for silicon NPN diffused mesa low-frequency high power transistors,Type 3DD162 and 3DD163
SJ 1645-1980 Detail specification for silicon NPN diffused mesa low-frequency high power transistors,Type 3DD173 and 3DD174
SJ 1646-1980 Detail specification for silicon NPN diffused mesa low-frequency high power transistors,Type 3DD175 and 3DD176
SJ 1647-1980 Detail specification for silicon NPN diffused mesa low-frequency high power transistors,Type 3DD253 and 3D
SJ 1649-1980 Detail specification for silicon NPN diffused mesa low-frequency high power transistors,Type 3DD257 and 3DD258
SJ 1648-1980 Detail specification for silicon NPN diffused mesa low-frequency high power transistors,Type 3DD255 and 3DD256
SJ 1651-1980 Detail specification for silicon NPN diffused mesa low-frequency high power transistors,Type 3DD262 and 3DD263
SJ 769-1974 Detail specification for silion NPN epitaxial planar low-frequency high power transistors,Type 3DD56 and 3DD57
SJ 773-1974 Detail specification for silicon NPN epitaxial planar low-frequency high power transistors,Type 3DD62 and 3DD63
SJ 771-1974 Detail specification for silicon NPN epitaxial planar low-frequency high power transistors,Type 3DD59 and 3DD60
SJ 1655-1980 Detail specification for silicon NPN diffused mesa low-frequency high power transistors,Type 3DD275 and 3DD276
SJ 777-1974 Detail specification for silicon NPN epitaxial planar low-frequency high power transistors,Type 3DD68 and 3DD69
SJ 794-1974 Detail specification for silicon NPN epitaxial planar high frequency low power low noise transistors,Type 3DG141
SJ 795-1974 Detail specification for silicon NPN epitaxial planar high frequency low power low noise transistors,Type 3DG142
SJ 775-1974 Detail specification for silicon NPN epitaxial planar low-frequency high power transistors,Type 3DD65 and 3DD66
SJ 1483-1979 Detail specification for silicon PNP epitaxial planar high frequency low power noise transistors,Type 3CG140
SJ 2282-1983 Detail specification for silicon NPN epitaxial planar superhigh frequency low noise low power transistors,Type 3DG143
SJ 2283-1983 Detail specification for silicon NPN epitaxial planar superhigh frequency low noise low power transistors,Type 3DG144
SJ 2284-1983 Detail specification for silicon NPN epitaxial planar superhigh frequency low noise low power transistors,Type 3DG145
SJ 2287-1983 Detail specification for silicon NPN epitaxial planar superhigh frequency low noise low power transistors,Tuype 3DG148
SJ 2288-1983 Detail specification for silicon NPN epitaxial planar superhigh frequency low noise low power transistors,Type 3DG149
SJ 2290-1983 Detail specification for silicon NPN epitaxial planar superhigh frequency low noise low power transistors,Type 3DG151
SJ 2380-1983 Detail specification for silicon PNP epitaxial planar low frequency high power transistors,Type 3CD555,3CD556 and 3CD655
SJ 2381-1983 Detail specification for silicon PNP epitaxial planar low frequency high power transistors,Type 3CD557,3CD558 and 3CD657
SJ 2377-1983 Detail specification for silicon PNP epitaxial planar low frequency high power transistors,Type 3CD548 3CD550 and 3CD649
SJ 2379-1983 Detail specification for silicon PNP epitaxial planar low frequency high power transistors,Type 3CD553,3CD554 and 3CD653
SJ 2293-1983 Detail specification for silicon NPN epitaxial planar superhigh frequency low noise low power transistors,Type 3DG155
SJ 2294-1983 Detail specification for silicon NPN epitaxial planar superhigh frequency low noise low power transistors,Type 3DG156
SJ 767-1974 Detail specification for silicon NPN epitaxial planar low-frequency high power transistors,Type 3DD53 and 3DD54
SJ 1652-1980 Detail specification for silicon NPN diffused mesa low-frequency high power transistors,Type 3DD264,3DD265 and 3DD266
SJ 1653-1980 Detail specification for silicon NPN diffused mesa low-frequency high power transistors,Type 3DD267,3DD268 and 3DD269
SJ 1643-1980 Detail specification for silicon NPN diffused mesa low-frequency high power transistors,Type 3DD167,3DD168 and 3DD169
SJ 1644-1980 Detail specification for silicon NPN diffused mesa low-frequency high power transistors,Type 3DD170,3DD171 and 3DD172
SJ 1650-1980 Detail specification for silicon NPN diffused mesa low-frequency high power transistors,Type 3DD259,3DD260 and 3DD261
SJ 2286-1983 Detail specification for silicon NPN epitaxial planar superhigh frequency low noise low power transistors,Type 3DG147
SJ 2291-1983 Detail specification for silicon NPN epitaxial planar superhigh frequency low noise low power transistors,Type 3DG153
SJ 1654-1980 Detail specification for silicon NPN diffused mesa low-frequency high power transistors,Type 3DD270,3DD271 and 3Dd272
SJ 1640-1980 Detail specification for silicon NPN diffused mesa low-frequency high power transistors,Type 3DD159,3DD160 and 3DD161
SJ 1642-1980 Detail specification for silicon NPN diffused mesa low-frequency high power transistors,Type 3DD164,3DD165 and 3DD166
SJ 2292-1983 Detail specification for silicon NPN epitaxial planar superhigh frequency low noise low power transistors,Type 3DG154
SJ 2285-1983 Detail specification for silicon NPN epitaxial planar superhigh frequency low noise low power transistors,Type 3DG146
SJ 2378-1983 Detail specification for silicon PNPepitaxial planar low frequency high power transistors,Type 3CD551,3CD552 and 3CD651
SJ 2289-1983 Detail specification for silicon NPN epitaxial planar superhigh frequency low noise low power transistors,Type 3DG151
SJ 3124-1988 Detail specification for electronic components--Case-rated bipolar transistors for silicon NPN low frequency amplification,Type 3DD1942
SJ 3125-1988 Detail specification for electronic components--Case-rated bipolar transistors for silicon NPN low frequency amplification,Type 3DD2027
SJ 3126-1988 Detail specification for electronic components--Case-rated bipolar transistors for silicon NPN low frequency amplification,Type 3DD869
SJ 3127-1988 Detail specification for electronic components--Case-rated bipolar transistors for silicon NPN low frequency amplification,Type 3DD871
SJ 3128-1988 Detail specification for electronic components--Case-rated bipolar transistors for silicon NPN low frequency amplification,Type 3DD820
SJ/T 10052-1991 Detail specification for electronic components.Case rated bipolar transistor for silicon PNP low-frequency amplification for type 3CD 507
SJ/T 11845.3-2022 Reliability evaluation method of electronic components based on low-frequency noise parameters Part 3: Diodes
SJ/T 10053-1991 Detail specification for electronic components.Case rated bipolar transistor for silicon NPN low-frequency amplification for type 3DD 313
SJ/T 10886-1996 Detailed specifications for electronic components - 3DD201 bipolar transistors for low frequency amplification case (Applicable for certification)
SJ/T 10833-1996 Detailed specifications for electronic components - 3DG80 ambient-rated bipolar transistors for low and high frequency amplification (Applicable for certification)
SJ/T 10772-1996 Detailed specifications for electronic components - 3DG201C ambient-rated bipolar transistors for low and high frequency amplification (Applicable for certification)
SJ/T 10887-1996 Detailed specifications for electronic components -3DD102B bipolar transistors for low frequency amplification case (Applicable for certification)
SJ/T 10770-1996 Detailed specifications for electronic components - 3DG130A-3DG130D ambient-rated bipolar transistors for low and high frequency amplification (Applicable for certification)
SJ/T 10790-1996 Detailed specifications for electronic components - 3CG21B and 3CG21C ambient-rated bipolar transistors for low and high frequency amplification (Applicable for certification)
SJ/T 10973-1996 Detailed specifications for electronic components - 3DD200 bipolar transistors for silicon NPN low frequency amplification case (Applicable for certification)
SJ/T 10791-1996 Detailed specifications for electronic components - 3CX2014A, 3CX201B and 3CX201C ambient-rated bipolar transistors for low and high frequency amplification (Applicable for certification)
SJ/T 10771-1996 Detailed specifications for electronic components - 3DG111B (111C, 111E and 111F) ambient-rated bipolar transistors for low and high frequency amplification (Applicable for certification)
SJ/T 10792-1996 Detailed specifications for electronic components - 33DX201A, 3DX201B and 3DX201C ambient-rated bipolar transistors for low and high frequency amplification (Applicable for certification)

Underwriters Laboratories (UL), quadrupole low frequency

UL 1409-1997 UL Standard for Safety Low-Voltage Video Products without Cathode-Ray-Tube Displays (Fourth Edition)
UL 1409-1986 UL Standard for Safety Low-Voltage Video Products Without Cathode-Ray-Tube Displays (Third Edition; Reprint with Revisions Through and Including September 12@ 1991)

Taiwan Provincial Standard of the People's Republic of China, quadrupole low frequency

CNS 14811-2004 Method of test for field measurement of soil resistivity using the Wenner four-electrode method

Professional Standard - Aerospace, quadrupole low frequency

QJ 2699-1995 Low frequency magnetic field susceptibility test method

Professional Standard - Electricity, quadrupole low frequency

DL/T 799.7-2002 Labour environment monitoring technoligical specification of electric power industry Part 7:Monitoring of very pow frequency electromagnetic fields
DL/T 1332-2014 Field test guide of low-frequency power test method for excitation characteristic on current transformer

Defense Logistics Agency, quadrupole low frequency

DLA MIL-DTL-3950/17 A-2008 SWITCHES, TOGGLE, FOUR POLE, 4 AMPERES, LOW LEVEL, ENVIRONMENTALLY SEALED
DLA MIL-DTL-83731/25 A-2008 SWITCHES, TOGGLE, MOMENTARY, FOUR POLE, 4 AMPERES, LOW LEVEL, ENVIRONMENTALLY SEALED
DLA SMD-5962-92339 REV F-2009 MICROCIRCUIT, LINEAR, QUAD, LOW POWER, VIDEO BUFFER, MONOLITHIC SILICON
DLA SMD-5962-98533 REV C-2005 MICROCIRCUIT, LINEAR, RADIATION HARDENED, VERY LOW NOISE QUAD OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
DLA SMD-5962-98533 REV D-2010 MICROCIRCUIT, LINEAR, RADIATION HARDENED, VERY LOW NOISE QUAD, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
DLA SMD-5962-98533 REV E-2013 MICROCIRCUIT, LINEAR, RADIATION HARDENED, VERY LOW NOISE QUAD, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
DLA SMD-5962-90633 REV A-2006 MICROCIRCUIT, LINEAR, QUAD BIFET, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
DLA SMD-5962-97541 REV A-2006 MICROCIRCUIT, DIGITAL, BIPOLAR, LOW-POWER SCHOTTKY TTL, QUADRUPLE 2-INPUT POSITIVE NAND BUFFER, MONOLITHIC SILICON
DLA SMD-5962-88648 REV E-2002 MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED LOW POWER SCHOTTKY, QUADRUPLE DIFFERENTIAL LINE DRIVER, MONOLITHIC SILICON
DLA SMD-5962-88649 REV E-2005 MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED LOW POWER SCHOTTKY, QUADRUPLE DIFFERENTIAL LINE RECEIVER, MONOLITHIC SILICON
DLA MIL-M-38510/323 D VALID NOTICE 2-2013 Microcircuits, Digital, Bipolar, Low-Power Schottky TTL, Quadruple Bus Buffer Gates with Three State Outputs, Monolithic Silicon
DLA SMD-5962-85126 REV C-2005 MICROCIRCUIT, DIGITAL, BIPOLAR, LOW-POWER SCHOTTKY TTL, BUFFERS, MONOLITHIC SILICON
DLA SMD-5962-90861 REV A-1996 MICROCIRCUIT, LINEAR, J-FET LOW POWER, SINGLE/DUAL/QUAD OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
DLA MIL-PRF-19500/597 D VALID NOTICE 1-2008 Semiconductor Device, Transistors, Quad, Field Effect, NChannel, Silicon, Type 2N7334, JAN, JANTX, JANTXV, JANS, JANHC, JANKCA2N7334, and JANHCA2N7334
DLA SMD-5962-86871 REV D-2006 MICROCIRCUITS, DIGITAL, BIPOLAR, ADVANCED LOW POWER SCHOTTKY TTL, QUADRUPLE 2-INPUT POSITIVE NAND BUFFERS, MONOLITHIC SILICON
DLA MIL-M-38510/114 B VALID NOTICE 1-2008 MICROCIRCUITS, LINEAR, BI-FET OPERATIONAL AMPLIFIERS, MONOLITHIC SILICON

工业和信息化部, quadrupole low frequency

SJ/T 11767-2020 Diode low frequency noise parameter testing method

International Telecommunication Union (ITU), quadrupole low frequency

ITU-R P.684-6-2012 Prediction of field strength at frequencies below about 150 kHz
ITU-R P.684-5-2009 Prediction of field strength at frequencies below about 150 kHz
ITU-R P.684-2016 Prediction of field strength at frequencies below about 150 kHz
ITU-R P.684-5 FRENCH-2009 Prediction of field strength at frequencies below about 150 kHz Pr関ision du champ aux fr閝uences inf閞ieures ?150 kHz environ
ITU-R P.684-5 SPANISH-2009 Prediction of field strength at frequencies below about 150 kHz Predicci髇 de la intensidad de campo en frecuencias por debajo de unos 150 kHz
ITU-R M.633-3-2004 Transmission characteristics of a satellite emergency position-indicating radio beacon (satellite EPIRB) system operating through a satellite system in the 406 MHz band

ITU-R - International Telecommunication Union/ITU Radiocommunication Sector, quadrupole low frequency

ITU-R P.684-7-2016 Prediction of field strength at frequencies below about 150 kHz
ITU-R P.684-2-2001 Prediction of Field Strength at Frequencies Below About 150 kHz
ITU-R P.684-3-2003 Prediction of field strength at frequencies below about 150 kHz (Question ITU-R 225/3)
ITU-R M.633-2-2000 Transmission Characteristics of a Satellite Emergency Position-Indicating Radio Beacon (Satellite EPIRB) System Operating Through a Low Polar-Orbiting Satellite System in the 406 MHz Band

Professional Standard - Coal, quadrupole low frequency

MT/T 975-2006 The specifications of the electric field perspective instruments with extra-low frequency in mine

Professional Standard - Railway, quadrupole low frequency

TB/T 3351-2014 Limits and methods of measurement of low frequency magnetic field inside Multiple Units

Korean Agency for Technology and Standards (KATS), quadrupole low frequency

KS C 0304-1-2009 Test method of magnetic shielding effectiveness in SLF range
KS C IEC 62226-2-1-2008(2018) Exposure to electric or magnetic fields in the low and intermediate frequency range－Methods for calculating the current density and internal electric field induced in the human body－Part 2－1：Exposure
KS C IEC 62226-1:2008 Exposure to electric or magnetic fields in the low and intermediate frequency range－Methods for calculating the current density and internal electric field induced in the human body－Part 1：General
KS C IEC 62226-2-1:2008 Exposure to electric or magnetic fields in the low and intermediate frequency range－Methods for calculating the current density and internal electric field induced in the human body－Part 2－1：Exposure to magnetic fields－2D models
KS X 4651-2-2014 Information technology — Magnetic field network — Low frequency band — Part 2: MAC layer requirement
KS X 4651-2-2014(2019) Information technology — Magnetic field network — Low frequency band — Part 2: MAC layer requirement
KS X 4651-1-2014(2019) Information technology — Magnetic field network — Low frequency band — Part 1: Physical layer requirement
KS C IEC 62226-1-2008(2018) Exposure to electric or magnetic fields in the low and intermediate frequency range－Methods for calculating the current density and internal electric field induced in the human body－Part 1：General
KS X 4651-1-2014 Information technology — Magnetic field network — Low frequency band — Part 1: Physical layer requirement
KS C IEC 61786:2008 Measurement of low-frequency magnetic and electric fields with regard to exposure of human beings－Special requirements for instruments and guidance for measurements
KS C IEC 61000-2-7-2007(2017) Electromagnetic compatibility(EMC)－Part 2－7：Environment－Low frequency magnetic fields in various environments
KS C IEC 61786-2008(2018) Measurement of low-frequency magnetic and electric fields with regard to exposure of human beings－Special requirements for instruments and guidance for measurements
KS C IEC 60130-5:2003 Connectors for frequencies below 3 MHz(Mc/s)-Part 5:Rectangular multipole connectors with blade contacts
KS C IEC 60130-5:2014 Connectors for frequencies below 3 MHz(Mc/s)-Part 5:Rectangular multipole connectors with blade contacts
KS C IEC 60747-7-1-2006(2016) Semiconductor devices－Discrete devices－Part 7：Bipolar transistors－Section One：Blank detail specification for ambient-rated bipolar transistors for low and high-frequency amplification
KS C IEC 60747-7-1-2006(2021) Semiconductor devices－Discrete devices－Part 7：Bipolar transistors－Section One：Blank detail specification for ambient-rated bipolar transistors for low and high-frequency amplification
KS X 4651-1-2009 Information technology-Magnetic field area network-Low frequency band-Part 1:Physical layer requirement
KS C IEC 61000-2-7-2007(2022) Electromagnetic compatibility(EMC)－Part 2－7：Environment－Low frequency magnetic fields in various environments
KS C IEC 60747-7-4-2006(2021) Semiconductor devices－Discrete devices－Part 7：Bipolar transistors－Section Four：Blank detail specification for case-rated bipolar transistors for high-frequency amplification
KS C IEC 60130-6:2003 Connectors for frequencies below 3MHz(Mc/s)-Part 6:Rectangular miniature multipole connectors with blade contacts
KS C IEC 60130-4-2003(2008) Connectors for frequencies below 3 MHz(Mc/s)－Part 4：Circular multipole connectors with threaded coupling
KS C IEC 60130-6:2014 Connectors for frequencies below 3MHz(Mc/s)－Part 6：Rectangular miniature multipole connectors with blade contacts
KS C IEC 61000-2-7:2007 Electromagnetic compatibility(EMC)－Part 2－7：Environment－Low frequency magnetic fields in various environments
KS C IEC 60130-4:2003 Connectors for frequencies below 3 MHz(Mc/s)-Part 4:Circular multipole connectors with threaded coupling
KS C IEC 60130-4:2014 Connectors for frequencies below 3 MHz(Mc/s)－Part 4：Circular multipole connectors with threaded coupling
KS C IEC 60130-5-2003(2008) Connectors for frequencies below 3 MHz(Mc/s)－Part 5：Rectangular multipole connectors with blade contacts
KS C IEC 60130-7-2003(2008) Connectors for frequencies below 3 MHz(Mc/s)－Part 7：Circular multipole connectors with bayonet or push-pull coupling
KS C IEC 60747-7-2-2006(2016) Semiconductor devices－Discrete devices－Part 7：Bipolar transistors－Section Two：Blank detail specification for case-rated bipolar transistors for low-frequency amplification
KS C IEC 60747-7-2-2006(2021) Semiconductor devices－Discrete devices－Part 7：Bipolar transistors－Section Two：Blank detail specification for case-rated bipolar transistors for low-frequency amplification
KS C IEC 60130-6-2003(2008) Connectors for frequencies below 3MHz(Mc/s)－Part 6：Rectangular miniature multipole connectors with blade contacts
KS C IEC 60130-7:2003 Connectors for frequencies below 3 MHz(Mc/s)-Part 7:Circular multipole connectors with bayonet or push-pull coupling
KS C IEC 60130-7:2014 Connectors for frequencies below 3 MHz(Mc/s)－Part 7：Circular multipole connectors with bayonet or push-pull coupling
KS C IEC 60747-7-2:2006 Semiconductor devices－Discrete devices－Part 7：Bipolar transistors－Section Two：Blank detail specification for case-rated bipolar transistors for low-frequency amplification
KS C IEC 60747-7-1:2006 Semiconductor devices－Discrete devices－Part 7：Bipolar transistors－Section One：Blank detail specification for ambient-rated bipolar transistors for low and high-frequency amplification
KS C IEC 60189-2-2014(2019) Low-frequency cables and wires with PVC insulation and PVC sheath — Part 2: Cables in pairs, triples, quads and quintuples for inside installations
KS C IEC 62489-2-2017(2022) Electroacoustics — Audio-frequency induction loop systems for assisted hearing — Part 2: Methods of calculating and measuring the low-frequency magnetic field emissions from the loop for assessing con
KS C IEC 60189-2:2014 Low-frequency cables and wires with PVC insulation and PVC sheath — Part 2: Cables in pairs, triples, quads and quintuples for inside installations

Danish Standards Foundation, quadrupole low frequency

DS/ENV 50166-1:1995 Human exposure to electromagnetic fieids -Low-frequency (0 Hz to 10 kHz)
DS/EN 62226-1:2005 Exposure to electric or magnetic fields in the low and intermediate frequency range - Methods for calculating the current density and internal electric field induced in the human body - Part 1: General
DS/EN 62226-2-1:2005 Exposure to electric or magnetic fields in the low and intermediate frequency range – Methods for calculating the current density and internal electric field induced in the human body – Part 2-1: Exposure to magnetic fields - 2D models
DS/EN 62226-3-1:2008 Exposure to electric or magnetic fields in the low and intermediate frequency range - Methods for calculating the current density and internal electric field induced in the human body - Part 3-1: Exposure to electric fields - Analytical and 2D numerical m
DS/IEC/TR 61000-2-7:1998 Electromagnetic compatibility (EMC) - Part 2: Environment - Section 7: Low frequency magnetic fields in various environments
DS/IEC 747-7-2:1990 Semiconductor devices. Discrete devices. Part 7: Bipolar transistors. Section two: Blank detail specification for case-rated bipolar transistors for low-frequency amplification
DS/IEC 747-7-1:1990 Semiconductor devices. Discrete devices. Part 7: Bipolar transistors. Section one: Blank detail specification for ambient-rated bipolar transistors for low and high-frequenc amplification
DS/EN 62489-2:2011 Electroacoustics - Audio-frequency induction loop systems for assisted hearing - Part 2: Methods of calculating and measuring the low-frequency magnetic field emissions from the loop for assessing conformity with guidelines on limits for human exposure

RU-GOST R, quadrupole low frequency

GOST 18604.20-1978 Transistors bipolar. Methods for measuring noise figure at low frequencies
GOST 16526-1970 Self-propelled, agricultural and wheeled road-construction machines. Low frequency vibration of the working. Methods for tests
GOST 30377-1995 Electromagnetic compatibility of technical means. Force electrical equipment. Limits for the low frequency periodical electromagnetic fields
GOST R 50010-1992 Electromagnetic compatibility of technical means. Force electrical equipment. Limits for the low frequency periodical electromagnetic field
GOST R 50012-1992 Electromagnetic compatibility of technical equipment. Power electrotechnic equipment. Methods of measurement for low frequency periodical magnetic field parameters
GOST 19438.1-1974 Receiving amplifier and transmitting tubes with power to 25 watt continuously scattered by anode. Measurement methods of dynamic amplification factor and amplificating asymmetri at LF

British Standards Institution (BSI), quadrupole low frequency

BS EN 62226-1:2005 Exposure to electric or magnetic fields in the low and intermediate frequency range - Methods for calculating the current density and internal electric field induced in the human body - General
BS EN 62226-2-1:2005 Exposure to electric or magnetic fields in the low and intermediate frequency range - Methods for calculating the current density and internal electric field induced in the human body - Exposure to magnetic fields - 2D models
BS IEC 61000-2-7:1998 Electromagnetic compatibility (EMC) - Environment - Low frequency magnetic fields in various environments
BS EN 62226-3-1:2007 Exposure to electric or magnetic fields in the low and intermediate frequency range - Methods for calculating the current density and internal electric field induced in the human body - Exposure to electric fields - Analytical and 2D numerical models
BS EN 62226-3-1:2007+A1:2017 Exposure to electric or magnetic fields in the low and intermediate frequency range. Methods for calculating the current density and internal electric field induced in the human body - Exposure to electric fields. Analytical and 2D numerical…
BS EN IEC 62764-1:2022 Tracked Changes. Measurement procedures of magnetic field levels generated by electronic and electrical equipment in the automotive environment with respect to human exposure. Low-frequency magnetic fields
BS E9372:1976 Specification for harmonized system of quality assessment for electronic components - Blank detail specification: ambient-rated bipolar transistors for low and high frequency amplification
21/30436665 DC BS EN 62764-1. Measurement procedures of magnetic field levels generated by electronic and electrical equipment in the automotive environment with respect to human exposure. Part 1. Low frequency magnetic fields
BS EN 50364:2010 Limitation of human exposure to electromagnetic fields from devices operating in the frequency range 0 Hz to 300 GHz, used in electronic article surveillance (EAS), radio frequency identification (RFID) and similar applications
BS EN 50364:2002 Limitation of human exposure to electromagnetic fields from devices operating in the frequency range 0 Hz to 10 GHz, used in electronic article surveillance (EAS), radio frequency identification (RFID) and similar applications
BS EN 62489-2:2011 Electroacoustics. Audio-frequency induction loop systems for assisted hearing. Methods of calculating and measuring the low-frequency magnetic field emissions from the loop for assessing conformity with guidelines on limits for human exposure
BS EN 62489-2:2014 Electroacoustics. Audio-frequency induction loop systems for assisted hearing. Methods of calculating and measuring the low-frequency magnetic field emissions from the loop for assessing conformity with guidelines on limits for human exposure
BS IEC 61000-3-8:1997 Electromagnetic compatibility (EMC) - Limits - Guide to signalling on low-voltage electrical installations - Emission levels, frequency bands and electromagnetic disturbance levels
BS IEC 61000-3-8:1998 Electromagnetic compatibility (EMC) - Limits - Guide to signalling on low-voltage electrical installations - Emission levels, frequency bands and electromagnetic disturbance levels

General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China, quadrupole low frequency

GB/Z 18039.6-2005 Electromagnetic compatibility.Environment.Low frequency magnetic fields in various environments
GB/T 30140-2013 Measuring method for the shielding effectiveness of magnetic material in low frequency alternating magnetic field
GB/T 7577-1996 Blank detail specification for case-rated bipolar transistors for low-frequency amplification
GB/T 7576-1998 Semiconductor devices--Discrete devices. Part 7: Bipolar transistors. Section Four--Blank detail specification for case-rated bipolar transistors for high-frequency amplification
GB/T 6217-1998 Semiconductor devices--Discrete devices. Part 7: Bipolar transistors. Section One--Blank detail specification for ambient-rated bipolar transistors for low and high frequency amplification
GB 9520-1988 Detail specification for electronic components 3DD200 type silicon NPN low frequency amplifying case rated bipolar transistors (available for certification)

Institute of Electrical and Electronics Engineers (IEEE), quadrupole low frequency

IEEE Std 433-2009 IEEE Recommended Practice for Insulation Testing™ of AC Electric Machinery with High Voltage at Very Low Frequency - Redline
IEEE Unapproved Draft Std P433/D16 Oct 2009 Draft Recommeded Practice for Insulation Testing of AC Electric Machinery with High Voltage at Very Low Frequency
IEEE Std 400.2-2013 - Redline IEEE Guide for Field Testing of Shielded Power Cable Systems Using Very Low Frequency (VLF)(less than 1 Hz) - Redline
IEEE P400.2/D6, July 2023 IEEE Draft Guide for Field Testing of Shielded Power Cable Systems Using Very Low Frequency (VLF) (less than 1 Hz)
IEEE 400.2-2004 Guide for Field Testing of Shielded Power Cable Systems Using Very Low Frequency (VLF)
IEEE Std 400.2-2004 IEEE Guide for Field Testing of Shielded Power Cable Systems Using Very Low Frequency (VLF)
IEEE 433-2022 IEEE Recommended Practice for Insulation Testing of AC Electric Machinery with High Voltage Rating up to 30 kV at Very Low Frequency
IEEE Std 302-1969 IEEE Standard Methods for Measuring Electromagnetic Field Strength for Frequencies Below 1000 MHz in Radio Wave Propagation
SMPTE RP 6:1994 RP 6:1994 - SMPTE Recommended Practice - Recorded Carrier Frequencies and Preemphasis Characteristics for 2-in Quadruplex Video Magnetic Tape Recording for 525-Line/60-Field Television Systems
IEEE Std 400.2-2013 IEEE Guide for Field Testing of Shielded Power Cable Systems Using Very Low Frequency (VLF)(less than 1 Hz) - Redline
IEEE P400.2/D13 August 2012 IEEE Draft Guide for Field Testing of Shielded Power Cable Systems Using Very Low Frequency (VLF) (less than 1 Hz)
IEEE P400.2/D12 January 2012 IEEE Draft Guide for Field Testing of Shielded Power Cable Systems Using Very Low Frequency (VLF) (less than 1 Hz)
IEEE P433/D9, December 2021 IEEE Approved Draft Recommended Practice for Insulation Testing of AC Electric Machinery with High Voltage Rating up to 30 kV at Very Low Frequency
IEEE P433/D7, June 2020 IEEE Draft Recommended Practice for Insulation Testing of AC Electric Machinery with High Voltage Rating up to 30 kV at Very Low Frequency
IEEE P433/D8, October 2021 IEEE Draft Recommended Practice for Insulation Testing of AC Electric Machinery with High Voltage Rating up to 30 kV at Very Low Frequency
IEEE Std P433/D11 2006 Unapproved IEEE Draft Recommended Practice for Insulation Testing of AC Electric Machinery With High Voltage at Very Low Frequency (Revision of IEEE 433-1974)

American Society for Testing and Materials (ASTM), quadrupole low frequency

ASTM G57-06 Standard Test Method for Field Measurement of Soil Resistivity Using the Wenner Four-Electrode Method

AT-ON, quadrupole low frequency

ONORM S 1119-1994 Low-frequency electric and magnetic fields - Permissible limits of exposure for the protection of persons in the frequency r?nge 0 Hz to 30 kHz

Association Francaise de Normalisation, quadrupole low frequency

NF EN 62226-1:2005 Exposition aux champs électriques ou magnétiques à basse et moyenne fréquence - Méthodes de calcul des densités de courants induits et des champs électriques induits dans le corps humain - Partie 1 : généralités
NF EN 62226-3-1/A1:2017 Exposition aux champs électriques ou magnétiques à basse et moyenne fréquence - Méthodes de calcul des densités de courant induit et des champs électriques induits dans le corps humain - Partie 3-1 : exposition à des champs électriques - Modè...
NF EN 62226-3-1:2008 Exposition aux champs électriques ou magnétiques à basse et moyenne fréquence - Méthodes de calcul des densités de courant induit et des champs électriques induits dans le corps humain - Partie 3-1 : exposition à des champs électriques - Modè...
NF EN 62226-2-1:2005 Exposition aux champs électriques ou magnétiques à basse et moyenne fréquence - Méthodes de calcul des densités de courant induit et des champs électriques induits dans le corps humain - Partie 2-1 : exposition à des champs magnétiques - Modè...
NF C99-115-1*NF EN 62226-1:2005 Exposure to electric or magnetic fields in the low and intermediate frequency range - Methods for calculating the current density and internal electric field induced in the human body - Part 1 : general
NF C99-115-2-1*NF EN 62226-2-1:2005 Exposure to electric or magnetic fields in the low and intermediate frequency range - Methods for calculating the current density and internal electric field induced in the human body - Part 2-1 : exposure to magnetic fields - 2D models.
NF C99-115-3-1*NF EN 62226-3-1:2008 Exposure to electric or magnetic fields in the low and intermediate frequency range - Methods for calculating the current density and internal electric field induced in the human body - Part 3-1 : exposure to electric fields - Analytical and 2D numerical
NF C99-115-3-1/A1*NF EN 62226-3-1/A1:2017 Exposure to electric or magnetic fields in the low and intermediate frequency range - Methods for calculating the current density and internal electric field induced in the human body - Part 3-1 : exposure to electric fields - Analytical and 2D numerical
NF S31-016-2:2011 Electroacoustics - Audio-frequency induction loop systems for assisted hearing - Part 2 : methods of calculating and measuring the low-frequency magnetic field emissions from the loop for assessing conformity with guidelines on limits for human exposure.
NF S31-016-2*NF EN 62489-2:2014 Electroacoustics - Audio-frequency induction loop systems for assisted hearing - Part 2 : methods of calculating and measuring the low-frequency magnetic field emissions from the loop for assessing conformity with guidelines on limits for human exposure
NF EN IEC 62764-1:2022 Procédures de mesure de l'exposition humaine aux niveaux de champs magnétiques générés par les accessoires électroniques et électriques dans l'environnement automobile - Partie 1 : champs magnétiques à basse fréquence
FD X07-025-2:2015 Metrology - Minimum technical programmes for metrological verification of measurement equipment - Part 2 : electricity-magnetism and time-frequency fields
NF C86-613:1981 Harmonised system of quality assessment for electronic components. Blank detail specification : case-rated bipolar transistors for low frequency application.
NF C86-614:1981 Harmonised system fo quality assessment for electronic components. Blank detail specification : bipolar transistors for switching applications.
NF EN 62489-2:2014 Électroacoustique - Systèmes de boucles d'induction audiofréquences pour améliorer l'audition - Partie 2 : méthodes de calcul et de mesure des émissions de champ magnétique basse fréquence à partir de la boucle pour l'évaluation de la conf...

German Institute for Standardization, quadrupole low frequency

DIN EN 62226-1:2005 Exposure to electric or magnetic fields in the low and intermediate frequency range - Methods for calculating the current density and internal electric field induced in the human body - Part 1: General (IEC 62226-1:2004); German version EN 62226-1:2005
DIN EN 62226-2-1:2005 Exposure to electric or magnetic fields in the low and intermediate frequency range - Methods for calculating the current density and internal electric field induced in the human body - Part 2-1: Exposure to magnetic fields - 2D models (IEC 62226-2-1:2004
DIN EN 62226-3-1:2008 Exposure to electric or magnetic fields in the low and intermediate frequency range - Methods for calculating the current density and internal electric field induced in the human body - Part 3-1: Exposure to electric fields - Analytical and 2D numerical m
DIN EN 62489-2:2011 Electroacoustics - Audio-frequency induction loop systems for assisted hearing - Part 2: Methods of calculating and measuring the low-frequency magnetic field emissions from the loop for assessing conformity with guidelines on limits for human exposure (I

Standard Association of Australia （SAA）, quadrupole low frequency

AS/NZS IEC/TR 61000.2.7:2009
AS/NZS IEC 62226.1:2021 Exposure to electric or magnetic fields in the low and intermediate frequency range — Methods for calculating the current density and internal electric field induced in the human body, Part 1: General
AS/NZS IEC 62226.2.1:2021 Exposure to electric or magnetic fields in the low and intermediate frequency range — Methods for calculating the current density and internal electric field induced in the human body, Part 2.1: Exposure to magnetic fields — 2D models

International Electrotechnical Commission (IEC), quadrupole low frequency

IEC 62226-2-1:2004 Exposure to electric or magnetic fields in the low and intermediate frequency range - Methods for calculating the current density and internal electric field induced in the human body - Part 2-1: Exposure to magnetic fields - 2D models
IEC 61786:1998 Measurement of low-frequency magnetic and electric fields with regard to exposure of human beings - Special requirements for instruments and guidance for measurements
IEC 60747-7-1:1989 Semiconductor devices; discrete devices; part 7: bipolar transistors; section one: blank detail specification for ambient-rated bipolar transistors for low and high-frequency amplification
IEC 62226-3-1:2007 Exposure to electric or magnetic fields in the low and intermediate frequency range - Methods for calculating the current density and internal electric field induced in the human body - Part 3-1: Exposure to electric fields - Analytical and 2D numerical m
IEC 62226-3-1:2007/AMD1:2016 Exposure to electric or magnetic fields in the low and intermediate frequency range - Methods for calculating the current density and internal electric field induced in the human body - Part 3-1: Expo
IEC 62226-3-1:2007+AMD1:2016 CSV Exposure to electric or magnetic fields in the low and intermediate frequency range - Methods for calculating the current density and internal electric field induced in the human body - Part 3-1: Expo
IEC TR 61000-2-7:1998 Electromagnetic compatibility (EMC) - Part 2: Environment - Section 7: Low frequency magnetic fields in various environments
IEC 60747-7-2:1989 Semiconductor devices; discrete devices; part 7: bipolar transistors; section two: blank detail specification for case-rated bipolar transistors for low-frequency amplification
IEC 62764-1:2022 Measurement procedures of magnetic field levels generated by electronic and electrical equipment in the automotive environment with respect to human exposure - Part 1: Low-frequency magnetic fields
IEC 60189-2:1981 Low-frequency cables and wires with p.v.c. insulation and p.v.c. sheath. Part 2 : Cables in pairs, triples, quads and quintuples for inside installations
IEC 60189-2:2007 Low-frequency cables and wires with PVC insulation and PVC sheath - Part 2: Cables in pairs, triples, quads and quintuples for inside installations

IEEE - The Institute of Electrical and Electronics Engineers@ Inc., quadrupole low frequency

IEEE 433-1974 Recommended Practice for Insulation Testing of Large AC Rotating Machinery with High Voltage at Very Low Frequency
IEEE 302-1969 Standard Methods for Measuring Electromagnetic Field Strength for Frequencies Below 1000 MHz in Radio Wave Propagation

European Committee for Electrotechnical Standardization（CENELEC）, quadrupole low frequency

EN 62226-1:2005 Exposure to electric or magnetic fields in the low and intermediate frequency range Methods for calculating the current density and internal electric field induced in the human body Part 1: General
EN 62226-2-1:2005 Exposure to electric or magnetic fields in the low and intermediate frequency range Methods for calculating the current density and internal electric field induced in the human body Part 2-1: Exposure to magnetic fields 2D models
EN 62226-3-1:2007 Exposure to electric or magnetic fields in the low and intermediate frequency range - Methods for calculating the current density and internal electric field induced in the human body - Part 3-1: Exposure to electric fields - Analytical and 2D numerical m
EN IEC 62764-1:2022 Measurement procedures of magnetic field levels generated by electronic and electrical equipment in the automotive environment with respect to human exposure - Part 1: Low-frequency magnetic fields

ES-UNE, quadrupole low frequency

UNE-EN 62226-1:2005 Exposure to electric or magnetic fields in the low and intermediate frequency range - Methods for calculating the current density and internal electric field induced in the human body -- Part 1: General (Endorsed by AENOR in July of 2005.)
UNE-EN 62226-2-1:2005 Exposure to electric or magnetic fields in the low and intermediate frequency range - Methods for calculating the current density and internal electric field induced in the human body -- Part 2-1: Exposure to magnetic fields - 2D models (Endorsed by AE...
UNE-EN 62226-3-1:2007 Exposure to electric or magnetic fields in the low and intermediate frequency range - Methods for calculating the current density and internal electric field induced in the human body -- Part 3-1: Exposure to electric fields - Analytical and 2D numeric...
UNE-EN IEC 62764-1:2022 Measurement procedures of magnetic field levels generated by electronic and electrical equipment in the automotive environment with respect to human exposure - Part 1: Low-frequency magnetic fields (Endorsed by Asociación Española de Normalización i...

PL-PKN, quadrupole low frequency

PN T01207-01-1992 Semiconductor devices Discrete devices BipoLar transistors Blank detail specification for ambient-rated bipolar transistors for Iow and high-frequency amplification
PN T01210-01-1992 Semiconductor devices Discrete devices Bipolar transistors Blank detail specification for case-rated bipolar transistors for low-frequency amplification

American National Standards Institute （ANSI), quadrupole low frequency

ANSI/IEEE 400.2:2013 Guide for Field Testing of Shielded Power Cable Systems Using Very Low Frequency (VLF) (less than 1 Hz)
ANSI/IEEE 400.2:2004 Guide for Field Testing of Shielded Power Cable Systems Using Very Low Frequency (VLF)

Indonesia Standards, quadrupole low frequency

SNI IEC 61786:2011

Military Standard of the People's Republic of China-General Armament Department, quadrupole low frequency

GJB/Z 70-1995 Very low frequency (VLF) radio system radio wave field strength and phase calculation method
GJB 973/3-2021 Detailed Specification for Type SFLF46-50-3-52 Extruded Low Density Polytetrafluoroethylene Insulated Low Loss Flexible Coaxial Radio Frequency Cable
GJB 973/7-2021 Detailed Specification for Type SFLF46-50-6-53 Extruded Low Density Polytetrafluoroethylene Insulated Low Loss Flexible Coaxial Radio Frequency Cable
GJB 973/2-2021 Detailed Specification for Type SFLF46-50-3-51 Extruded Low Density Polytetrafluoroethylene Insulated Low Loss Flexible Coaxial Radio Frequency Cable
GJB 973/8-2021 Detailed specification for SFLF46-50-8-51 type extruded low-density polytetrafluoroethylene insulated low-loss flexible coaxial radio frequency cable
GJB 973/4-2021 Detailed Specification for Type SFLF46-50-4-52 Extruded Low Density Polytetrafluoroethylene Insulated Low Loss Flexible Coaxial Radio Frequency Cable
GJB 973/6-2021 Detailed Specification for Type SFLF46-50-4-54 Extruded Low Density Polytetrafluoroethylene Insulated Low Loss Flexible Coaxial Radio Frequency Cable
GJB 973/1-2021 Detailed Specification for Type SFLF46-50-2-51 Extruded Low Density Polytetrafluoroethylene Insulated Low Loss Flexible Coaxial Radio Frequency Cable
GJB 973/5-2021 Detailed Specification for Type SFLF46-50-4-53 Extruded Low Density Polytetrafluoroethylene Insulated Low Loss Flexible Coaxial Radio Frequency Cable

CU-NC, quadrupole low frequency

NC 66-23-1984 Electronics. High-Power and Low-Frequency Bipolar Transistors, Type 2N 3055. Quality Specifications
NC 66-15-1987 Electronic and Electrotechnical Vocabulary. Low Frequency and Power Bioolar Transistors. Quality Specifications
NC 66-94-1987 Electronic and Electrotechnical Industry. Low Frequency and High Power Bipolar Transistors Quality Specifications
NC 66-93-1987 Electronic and Electrotecnical Industry. Low Frequency and Medium Power Bipolar Transistors. Quality Specifications
NC 66-20-1984 Electronios. High-Power and Low-Frequency Bipolar Tranaistors, Types BD 175, BD 176, BD 177 and BD 178. Quaiity Specifications
NC 66-22-1984 Electronios. High-Power and Low-Frequency Bipolar Tranaistors, Types BD 705, BD 707, BD 708, BD 709, y BD 710 Quality Specifications
NC 66-24-1984 Electronics. High-Power and Low-Frequency Bipolar Transistors, Types BD 533, BD 534, BD 535, BD 536, BD 537 BD 538. Quality Specifications
NC 66-21-1984 Electronios. High-Power and Low-Frequency Bipolar Tranaistors, Types BD 233, BD 234, BD 235, BD 236, BD 237 y BD 238. Quality Specifications

CENELEC - European Committee for Electrotechnical Standardization, quadrupole low frequency

EN 150003:1991 Blank Detail Specification: Case-Rated Bipolar Transistors for Low Frequency Amplification

Japanese Industrial Standards Committee (JISC), quadrupole low frequency

JIS C 1910:2004 Measurement of low-frequency magnetic and electric fields with regard to exposure of human beings -- Special requirements for instruments and guidance for measurements

Lithuanian Standards Office , quadrupole low frequency

LST EN 62226-1-2005 Exposure to electric or magnetic fields in the low and intermediate frequency range. Methods for calculating the current density and internal electric field induced in the human body. Part 1: General (IEC 62226-1:2004)
LST EN 62226-3-1-2008 Exposure to electric or magnetic fields in the low and intermediate frequency range - Methods for calculating the current density and internal electric field induced in the human body - Part 3-1: Exposure to electric fields - Analytical and 2D numerical m
LST EN 62226-2-1-2005 Exposure to electric or magnetic fields in the low and intermediate frequency range. Methods for calculating the current density and internal electric field induced in the human body. Part 2-1: Exposure to magnetic fields - 2D models (IEC 62226-2-1:2004)
LST EN 62489-2-2011 Electroacoustics - Audio-frequency induction loop systems for assisted hearing -- Part 2: Methods of calculating and measuring the low-frequency magnetic field emissions from the loop for assessing conformity with guidelines on limits for human exposure (

Military Standards (MIL-STD), quadrupole low frequency

DOD MIL-STD-1582 D ADMIN NOTICE 1-2004 EXTREMELY HIGH FREQUENCY (EHF) LOW DATA RATE (LDR) SATELLITE DATA LINK STANDARDS (SDLS) UPLINKS AND DOWNLINKS (U)
DOD MIL-STD-1582 D VALID NOTICE 2-2013 Extremely High Frequency (EHF) Low Data Rate (LDR) Satellite Data Link Standards (SDLS) Uplinks and Downlinks (U)

IECQ - IEC: Quality Assessment System for Electronic Components, quadrupole low frequency

QC 750103/ CN 0001-1992 Detail Specification for Electronic Components Case-Rated Bipolar Transistors for Low-Frequency Amplification Type 3DD870
QC 750102-1989 Semiconductor Devices Discrete Devices Part 7: Bipolar Transistors Section One - Blank Detail Specification for Ambient-Rated Bipolar Transistors for Low and High- Frequency Amplification (IEC 747-7-1 ED 1)
QC 750103-1989 Semiconductor Devices Discrete Devices Part 7: Bipolar Transistors Section Two - Blank Detail Specification for Case-Rated Bipolar Transistors for Low- Frequency Amplification (IEC 747-7-2 ED 1)

Society of Motion Picture and Television Engineers (SMPTE), quadrupole low frequency

SMPTE RP 6-1994 Recorded Carrier Frequencies and Preemphasis Characteristics for 2-in Quadruplex Video Magnetic Tape Recording for 525-Line/60-Field Television Systems

TH-TISI, quadrupole low frequency

TIS 1865-1999 Semiconductor devices-discrete devices part 7:bipolar transistors section 1:blank detail specification for ambient-rated bipolar transistors for low and high-frequency amplification
TIS 1866-1999 Semiconductor devices - discrete devices part 7:bipolar transistors section 2:blank detail specification for case-rated bipolar transistors for low frequency amplification

Group Standards of the People's Republic of China, quadrupole low frequency

T/CEC 243-2019 10 (6) kV~35kV extruded insulation power cable system ultra-low frequency (0.1Hz) field test method

AENOR, quadrupole low frequency

UNE 21000-2-7:2002 IN Electromagnetic compatibility (EMC) - Part 2: Environment - Section 7: Low frequency magnetic fields in various environments.
UNE 212002-2:2014 Low-frequency cables and wires with PVC insulation and PVC sheath. Part 2: Cables in pairs, triples, quads and quintuples for inside installations.

ZA-SANS, quadrupole low frequency

SANS 62226-1:2006 Exposure to electric or magnetic fields in the low and intermediate frequency range - Methods for calculating the current density and internal electric field induced in the human body Part 1: General
SANS 61000-2-7:1998 Electromagnetic compatibility (EMC) Part 2: Environment Section 7: Low frequency magnetic fields in various environments
SANS 62226-2-1:2006 Exposure to electric or magnetic fields in the low and intermediate frequency range - Methods for calculating the current density and internal electric field induced in the human body Part 2-1: Exposure to magnetic fields - 2D models

Canadian Standards Association (CSA), quadrupole low frequency

CSA C61000-2-7:04-CAN/CSA-2004 Electromagnetic compatibility (EMC) Part 2: Environment Section 7: Low frequency magnetic fields in various environments First Edition
CAN/CSA-C61000-2-7-2004 Electromagnetic compatibility (EMC) – Part 2: Environment - Section 7: Low frequency magnetic fields in various environments (First Edition)

IN-BIS, quadrupole low frequency

IS 4400 Pt.9/Sec.1-1974

CZ-CSN, quadrupole low frequency

CSN IEC 189-2:1992 Low-frequency cables and wires with PVC insulation and PVC sheath. Part 2: Cables in pairs, triples, quads and quintuples for inside installations

BE-NBN, quadrupole low frequency

NBN C 32-502-1978

未注明发布机构, quadrupole low frequency

BS EN 150003:1993(2000) Specification for Harmonized system of quality assessment for electronic components — Blank detail specification — Case - rated bipolar transistors for low frequency amplification

中华人民共和国国家质量监督检验检疫总局、中国国家标准化管理委员会, quadrupole low frequency

GB/T 33977-2017 Methods to quantify the steady state, power-frequency electrimagnetic fields generated by HV switchgear assemblies and HV/LV prefabricated substations

KR-KS, quadrupole low frequency

KS C 3380-2023 Measurement procedures of low frequency magnetic field levels generated by electronic and electrical equipment in the electric vehicle and electric vehicle supply equipment with respect to human expos
KS C IEC 62489-2-2017 Electroacoustics — Audio-frequency induction loop systems for assisted hearing — Part 2: Methods of calculating and measuring the low-frequency magnetic field emissions from the loop for assessing con

RO-ASRO, quadrupole low frequency

SR CEI 189-2+A1-1995 Low-frequency cables and wires with PVC insulation and PVC sheath Part 2: Cables in pairs, tripies, quads and quintuples for inside installations