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Gap silicon

Gap silicon, Total:19 items.

In the international standard classification, Gap silicon involves: Semiconducting materials, Power transmission and distribution networks, Insulating fluids, Testing of metals.

IEEE - The Institute of Electrical and Electronics Engineers@ Inc., Gap silicon

• IEEE C62.1-1989 Standard for Gapped Silicon-Carbide Surge Arresters for AC Power Circuits
• IEEE C62.2-1987 Guide for the Application of Gapped Silicon-Carbide Surge Arresters for Alternating Current Systems

Institute of Electrical and Electronics Engineers (IEEE), Gap silicon

• IEEE Std C62.2-1987(R1994) IEEE Guide for the Application of Gapped Silicon-Carbide Surge Arresters for Alternating Current Systems
• IEEE Std C62.2-1989 IEEE Guide for the Application of Gapped Silicon-Carbide Surge Arresters for Alternating Current Systems
• IEEE Std C62.1-1989 Gapped silicon-carbide surge arresters for ac power circuits
• IEEE Std C62.2-1987 Guide for the Application of Gapped Silicon-Carbide Surge Arresters for Alternating Current Systems

Professional Standard - Electron, Gap silicon

• SJ/T 11495-2015 Guide to conversion factors for interstitial oxygen in silicon
• SJ/T 11491-2015 Test methods for measurement of interstitial oxygen content in silicon by short baseline infrared absorption spectrometry
• SJ/T 11552-2015 Test methods for measurement of interstitial oxygen content of silicon wafers by infrared absorption with P-polarized radiation incident at the Brewster angle

General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China, Gap silicon

• GB/T 14143-1993 Infrared Absorption Measurement Method of Oxygen Content in the Gap of 300-900μm Silicon Wafer
• GB/T 14144-1993 Test method for determination of radial interstitial oxygen variation in silicon
• GB/T 14144-2009 Testing method for determination of radial interstitial oxygen variation in silicon
• GB/T 1557-1989 The method of determining interstitial oxygen content in silicon by infrared absorption
• GB/T 1557-2006 The method of determining interstitial oxygen content in silicon by infrared absorption

国家市场监督管理总局、中国国家标准化管理委员会, Gap silicon

• GB/T 1557-2018 Test method for determining interstitial oxygen content in silicon by infrared absorption

American Society for Testing and Materials (ASTM), Gap silicon

• ASTM F951-01 Standard Test Method for Determination of Radial Interstitial Oxygen Variation in Silicon Wafers
• ASTM F1188-00 Standard Test Method for Interstitial Atomic Oxygen Content of Silicon by Infrared Absorption
• ASTM F1239-94 Standard Test Methods for Oxygen Precipitation Characterization of Silicon Wafers by Measurement of Interstitial Oxygen Reduction
• ASTM F951-96 Standard Test Method for Determination of Radial Interstitial Oxygen Variation in Silicon Wafers

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