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High Efficiency Photodiode

High Efficiency Photodiode, Total:271 items.

In the international standard classification, High Efficiency Photodiode involves: Printed circuits and boards, Semiconductor devices, Optoelectronics. Laser equipment, Fibre optic communications, Electronic tubes, Ceramics, Audio, video and audiovisual engineering, Television and radio broadcasting, Nuclear energy engineering, Solar energy engineering, Small craft, Aircraft and space vehicles in general, Road vehicle systems, Ergonomics, IT terminal and other peripheral equipment, Lamps and related equipment, Electronic display devices, Dentistry, Radiation measurements, Electrical and electronic testing, Non-ferrous metals.

British Standards Institution (BSI), High Efficiency Photodiode

BS IEC 60747-5-8:2019 Semiconductor devices. Optoelectronic devices. Light emitting diodes. Test method of optoelectronic efficiencies of light emitting diodes
18/30367363 DC BS IEC 60747-5-8. Semiconductor devices. Part 5-8. Optoelectronic devices. Light emitting diodes. Test method of optoelectronic efficiencies of light emitting diodes
PD IEC TR 60747-5-12:2021 Semiconductor devices. Optoelectronic devices. Light emitting diodes. Test method of LED efficiencies
BS IEC 60747-5-16:2023 Semiconductor devices - Optoelectronic devices. Light emitting diodes. Test method of the flat-band voltage of GaN-based light emitting diodes based on the photocurrent spectroscopy
BS IEC 60747-5-11:2019 Semiconductor devices. Optoelectronic devices. Light emitting diodes. Test method of radiative and nonradiative currents of light emitting diodes
BS EN 120005:1986 Specification for harmonized system of quality assessment for electronic components - Blank detail specification - Photodiodes, photodiode-arrays (not intended for fibre optic applications)
BS EN 120001:1993 Harmonized system of quality assessment for electronic components. Blank detail specification. Light emitting diodes, light emitting diode arrays, light emitting diode displays without internal logic and resistor
BS EN 120001:1991 Harmonized system of quality assessment for electronic components - Blank detail specification - Light emitting diodes, light emitting diode arrays, light emitting diode displays without internal logic and resistor
BS IEC 60747-5-9:2019 Semiconductor devices. Optoelectronic devices. Light emitting diodes. Test method of the internal quantum efficiency based on the temperature-dependent electroluminescence
BS ISO 20351:2017 Fine ceramics (advanced ceramics, advanced technical ceramics). Absolute measurement of internal quantum efficiency of phosphors for white light emitting diodes using an integrating sphere
BS EN 120005:1993 Specification for harmonized system of quality assessment for electronic components. Blank detail specification. Photodiodes, photodiode-arrays (not intended for fibre optic applications)
BS PD IEC/TS 62916:2017 Photovoltaic modules. Bypass diode electrostatic discharge susceptibility testing
BS IEC 60747-5-10:2019 Semiconductor devices. Optoelectronic devices. Light emitting diodes. Test method of the internal quantum efficiency based on the room-temperature reference point
18/30388245 DC BS EN IEC 60747-5-11. Semiconductor devices. Part 5-11. Optoelectronic devices. Light emitting diodes. Test method of radiative and nonradiative currents of light emitting diodes
BS EN ISO 19009:2015 Small craft. Electric navigation lights. Performance of LED lights
PD IEC/TS 62916:2017 Photovoltaic modules. Bypass diode electrostatic discharge susceptibility testing
BS EN 120002:1993 Specification for harmonized system of quality assessment for electronic components. Blank detail specification: infrared emitting diodes, infrared emitting diode arrays
BS EN 62341-6-1:2011 Organic light emitting diode (OLED) displays. Measuring methods of optical and electro-optical parameters
18/30367367 DC BS IEC 60747-5-62. Semiconductor devices. Part 5-9. Optoelectronic devices. Light emitting diodes. Test method of the internal quantum efficiency based on the temperature-dependent electroluminescence
BS IEC 60747-5-15:2022 Semiconductor devices - Optoelectronic devices. Light emitting diodes. Test method of the flat-band voltage based on the electroreflectance spectroscopy
19/30392174 DC BS EN 60747-5-6. Semiconductor devices. Part 5-6. Optoelectronic devices. Light emitting diodes
BS EN 62384:2006 D.C. or A.C. supplied electronic control gear for LED modules - Performance requirements
18/30367371 DC BS IEC 60747-5-63. Semiconductor devices. Part 5-10. Optoelectronic devices. Light emitting diodes. Test method of the internal quantum efficiency by the room-temperature reference point
BS ISO 23946:2020 Fine ceramics (advanced ceramics, advanced technical ceramics). Test methods for optical properties of ceramic phosphors for white light-emitting diodes using a gonio-spectrofluorometer
PD IEC TS 63109:2022 Photovoltaic (PV) modules and cells. Measurement of diode ideality factor by quantitative analysis of electroluminescence images
BS EN 61347-2-13:2006 Lamp controlgear - Particular requirements for d.c. or a.c. supplied electronic controlgear for LED modules
BS EN 61347-2-13:2014 Lamp controlgear. Particular requirements for d.c. or a.c. supplied electronic controlgear for LED modules
BS EN 62384:2006+A1:2009 DC or AC supplied electronic control gear for LED modules - Performance requirements
14/30313209 DC BS EN 62341-6-1. Organic light emitting diode (OLED) displays. Part 6-1. Measuring methods of optical and electro-optical parameters
23/30456750 DC BS ISO 13915. Fine ceramics (advanced ceramics, advanced technical ceramics). Test method for optical properties of ceramic phosphors for white light-emitting diodes with reference materials
23/30475452 DC BS EN IEC 62341-6-1. Organic light emitting diode (OLED) displays - Part 6-1. Measuring methods of optical and electro-optical parameters
20/30430108 DC BS EN IEC 62341-6-1. Organic light emitting diode (OLED) displays. Part 6-1. Measuring methods of optical and electro-optical parameters
21/30440970 DC BS EN IEC 60747-5-16. Semiconductor devices - Part 5-16. Optoelectronic devices. Light emitting diodes. Test method of the flat-band voltage based on the photocurrent spectroscopy
20/30422995 DC BS EN IEC 60747-5-15. Semiconductor devices. Part 5-15. Optoelectronic devices. Light emitting diodes. Test method of the flat-band voltage based on the electroreflectance spectroscopy
20/30394351 DC BS ISO 23946. Fine ceramics (advanced ceramics, advanced technical ceramics). Test methods for optical properties of ceramic phosphors for white light emitting diodes using a Gonio-spectrofluorometer
BS EN 62560:2012 Self-ballasted LED-lamps for general lighting services by voltage 50 V. Safety specifications
BS EN 62341-6-2:2012 Organic light emitting diode (OLED) displays. Measuring methods of visual quality and ambient performance
BS EN IEC 62149-12:2023 Fibre optic active components and devices. Performance standards - Distributed feedback laser diode device for analogue radio over fibre systems

International Electrotechnical Commission (IEC), High Efficiency Photodiode

IEC 91/926/PAS:2010 Electronic circuit board for high-brightness LEDs
IEC 60747-5-8:2019 Semiconductor devices - Part 5-8: Optoelectronic devices - Light emitting diodes - Test method of optoelectronic efficiencies of light emitting diodes
IEC 91/928/PAS:2010 Test methods for electronic circuit board for high-brightness LEDs
IEC TR 60747-5-12:2021 Semiconductor devices - Part 5-12: Optoelectronic devices - Light emitting diodes - Test method of LED efficiencies
IEC 60747-5-7:2016 Semiconductor devices - Part 5-7: Optoelectronic devices - Photodiodes and phototransistors
IEC 60747-5-16:2023 Semiconductor devices - Part 5-16: Optoelectronic devices - Light emitting diodes - Test method of the flat-band voltage of GaN-based light emitting diodes based on the photocurrent spectroscopy
IEC 60747-5-11:2019 Semiconductor devices - Part 5-11: Optoelectronic devices - Light emitting diodes - Test method of radiative and nonradiative currents of light emitting diodes
IEC TS 62916:2017 Photovoltaic modules - Bypass diode electrostatic discharge susceptibility testing
IEC 60747-5-6:2016 Semiconductor devices - Part 5-6: Optoelectronic devices - Light emitting diodes
IEC 60747-5-6:2021 Semiconductor devices - Part 5-6: Optoelectronic devices - Light emitting diodes
IEC 60747-5-6:2021 RLV Semiconductor devices - Part 5-6: Optoelectronic devices - Light emitting diodes
IEC 60747-5-9:2019 Semiconductor devices - Part 5-9: Optoelectronic devices - Light emitting diodes - Test method of the internal quantum efficiency based on the temperature-dependent electroluminescence
IEC 60747-5-10:2019 Semiconductor devices - Part 5-10: Optoelectronic devices - Light emitting diodes - Test method of the internal quantum efficiency based on the room-temperature reference point
IEC 62341-6-3:2017/COR1:2019 Organic light emitting diode (OLED) displays - Part 6-1: Measuring methods of optical and electro-optical parameters
IEC 62341-6-1:2022 RLV Organic light emitting diode (OLED) displays - Part 6-1: Measuring methods of optical and electro-optical parameters
IEC 62341-6-1:2017 RLV Organic light emitting diode (OLED) displays - Part 6-1: Measuring methods of optical and electro-optical parameters
IEC 62341-6-1:2022 Organic light emitting diode (OLED) displays - Part 6-1: Measuring methods of optical and electro-optical parameters
IEC 62595-2:2012 LCD backlight unit - Part 2: Electro-optical measurement methods of LED backlight unit
IEC 62384:2006 D.C. or A.C. supplied electronic control gear for LED modules - Performance requirements
IEC TS 63109:2022 Photovoltaic (PV) modules and cells - Measurement of diode ideality factor by quantitative analysis of electroluminescence images
IEC 62384:2011 DC or AC supplied electronic control gear for LED modules - Performance requirements
IEC 62341-6-1:2017 Organic light emitting diode (OLED) displays - Part 6-1: Measuring methods of optical and electro-optical parameters
IEC 62341-6-1:2009 Organic light emitting diode (OLED) displays - Part 6-1: Measuring methods of optical and electro-optical parameters
IEC 60747-5-15:2022 Semiconductor devices - Part 5-15: Optoelectronic devices - Light emitting diodes - Test method of the flat-band voltage based on the electroreflectance spectroscopy
IEC 60747-12-3:1998 Semiconductor devices - Part 12-3: Optoelectronic devices - Blank detail specification for light-emitting diodes - Display application
IEC 62560:2011 Self-ballasted LED-lamps for general lighting services by voltage > 50 V - Safety specifications
IEC 62560:2015 Self-ballasted LED-lamps for general lighting services by voltage > 50 V - Safety specifications
IEC 61347-2-13:2014 Lamp controlgear - Part 2-13: Particular requirements for d.c. or a.c. supplied electronic controlgear for LED modules
IEC 61347-2-13:2006 Lamp controlgear - Part 2-13: Particular requirements for d.c. or a.c. supplied electronic controlgears for LED modules

Professional Standard - Military and Civilian Products, High Efficiency Photodiode

WJ 2100-2004 Test method for silicon photodiodes and silicon avalanche photodiodes
WJ 2265-1995 Specifications for Preamplified Silicon Avalanche Photodiodes
WJ 2506-1998 Verification Regulations for Photodiode Dynamic Tester

ES-UNE, High Efficiency Photodiode

UNE-EN 120005:1992 BDS: PHOTODIODES, PHOTODIODE ARRAYS (NOT INTENDED FOR FIBRE OPTIC APPLICATIONS). (Endorsed by AENOR in September of 1996.)
UNE-EN 120001:1992 BDS: LIGHT EMITTING DIODES, LIGHT EMITTING DIODE ARRAYS, LIGHT EMITTING DIODE DISPLAYS WITHOUT INTERNAL LOGIC AND RESISTOR. (Endorsed by AENOR in September of 1996.)
UNE-EN 120006:1992 BDS: PIN-PHOTODIODES FOR FIBRE OPTIC APPLICATIONS. (Endorsed by AENOR in September of 1996.)

German Institute for Standardization, High Efficiency Photodiode

DIN EN 120005:1996 Blank detail specification - Photodiodes, photodiode-arrays (not intended for fibre optic applications); German version EN 120005:1992
DIN EN 120005:1996-11 Blank detail specification - Photodiodes, photodiode-arrays (not intended for fibre optic applications); German version EN 120005:1992
DIN EN 120001:1993-06 Blank detail specification: light emitting diodes, light emitting diode arrays, light emitting diode displays without internal logic and resistor; German version EN 120001:1992
DIN EN 120001:1993 Blank detail specification: light emitting diodes, light emitting diode arrays, light emitting diode displays without internal logic and resistor; German version EN 120001:1992
DIN IEC 62088:2002-09 Nuclear instrumentation - Photodiodes for scintillation detectors - Test procedures (IEC 62088:2001)
DIN EN 62341-6-1:2011-07 Organic light emitting diode (OLED) displays - Part 6-1: Measuring methods of optical and electro-optical parameters (IEC 62341-6-1:2009); German version EN 62341-6-1:2011
DIN EN 62384:2007 DC or AC supplied electronic control gear for LED modules - Performance requirements (IEC 62384:2006); German version EN 62384:2006
DIN IEC 62088:2002 Nuclear instrumentation - Photodiodes for scintillation detectors - Test procedures (IEC 62088:2001)
DIN EN 62384:2010 DC or AC supplied electronic control gear for LED modules - Performance requirements (IEC 62384:2006 + A1:2009); German version EN 62384:2006 + A1:2009
DIN EN 61347-2-13:2007 Lamp controlgear - Part 2-13: Particular requirements for d.c. or a.c. supplied electronic controlgear for LED modules (IEC 61347-2-13:2006); German version EN 61347-2-13:2006

European Standard for Electrical and Electronic Components, High Efficiency Photodiode

EN 120005:1992 Blank detail specification: photodiodes, photodiode-arrays (not intended for fibre optic applications)
EN 120001:1992 Blank detail specification; light emitting diodes, light emitting diode arrays, light emitting diode displays without internal logic and resistor
EN 120006:1992 Blank detail specification: PIN-photodiodes for fibre optic applications

Association Francaise de Normalisation, High Efficiency Photodiode

NF EN 120005:1992 Spécification particulière cadre : photodiodes, réseaux de photodiodes (Non destinées aux applications pour les fibres optiques}
NF C93-120-005*NF EN 120005:1992 Blank detail specification : photodiodes, photodiode arrays (not intended for fibre optic applications)
NF EN 120001:1992 Spécification particulière cadre : diodes électroluminescentes, réseaux de diodes électroluminescentes, afficheurs à diodes électroluminescentes sans résistance ni circuits logiques internes
NF C93-120-001*NF EN 120001:1992 Blank detail specification : light emitting diodes, light emitting diode arrays, light emitting diode displays without internal logic and resistor
NF C96-551/A2:1981 Optoelectronic Light emitting diodes Optocouplers Relevant Article Sheets
NF C96-551/A3:1981 Optoelectronic Light emitting diodes Optocouplers Relevant Article Sheets
NF C86-502:1983 Harmonized system of quality assessment for electronic components. Blank detail specification. Infrared emitting diodes, infrared emitting diodes arrays.
NF C93-872:1987 Digital receivers with pin photodiode.
NF C86-501:1983 Harmonized system of quality assessment for electronic components. Blank detail specification. Light emitting diodes, light emitting diode arrays.
NF C86-505:1986 Semiconductor devices. Harmonized system of quality assessment for electronic components. Photodiodes. Photodiodes-arrays. Blank detail specification CECC 20 005.
NF EN 62341-6-1:2011 Afficheurs à diodes électroluminescentes organiques (OLED) - Partie 6-1 : méthodes de mesure des paramètres optiques et électro-optiques
NF C96-565-2*NF EN 62595-2:2013 LCD backlight unit - Part 2 : electro-optical measurement methods of LED backlight unit
NF C71-305*NF EN 62384:2006 D.C. or A.C. supplied electronic control gear for LED modules - Performance requirements.
NF C96-541-6-1*NF EN 62341-6-1:2011 Organic light emitting diode (OLED) displays - Part 6-1 : measuring methods of optical and electro-optical parameters.
NF EN IEC 63286:2022 Panneaux à diodes électroluminescentes organiques (OLED) flexibles destinés à l'éclairage général - Exigences de performance
NF C71-251*NF EN 62560:2013 Self-ballasted LED-lamps for general lighting services by voltage > 50 V - Safety specifications
NF C71-247-13:2006 Lamp controlgear - Part 2-13 : particular requirements for d.c. for a.c. supplied electronic controlgear for LED modules.
NF C71-247-13*NF EN 61347-2-13:2014 Lamp controlgear - Part 2-13 : particular requirements for d.c. or a.c. supplied electronic controlgear for LED modules

SE-SIS, High Efficiency Photodiode

SIS SS CECC 20005-1988 Blank detail specification: Photodiodes, photodiode-arrays (not intended for fibre optic aoolications)
SIS SS-CECC 20001-1991 Blank detail specification: Light emitting diodes, light emitting diode arrays, light emitting diode displays without internal logic and resistor
SIS SS CECC 20006-1988 Blank detail specification: PIN-photodiodes for fibre optic applications

(U.S.) Telecommunications Industries Association , High Efficiency Photodiode

TIA-455-130-2001 Elevated Temperature Life Test for Laser Diodes
TIA-455-130-2007(2014) Elevated Temperature Life Test for Laser Diodes

Lithuanian Standards Office , High Efficiency Photodiode

LST EN 120005-2001 Blank detail specification. Photodiodes, photodiode-arrays (not intended for fibre optic applications)
LST EN 120001-2001 Blank detail specification. Light emitting diodes, light emitting diode arrays, light emitting diode displays without internal logic and resistor
LST EN 62341-6-1-2011 Organic light emitting diode (OLED) displays -- Part 6-1: Measuring methods of optical and electro-optical parameters (IEC 62341-6-1:2009)

Korean Agency for Technology and Standards (KATS), High Efficiency Photodiode

KS C 6990-2001 General rules of photodiodes for fiber optic transmission
KS C 6905-2001 General rules of laser diodes for fiber optic transmission
KS C 6991-2001 Test methods of photodiodes for fiber optic transmission
KS C 6906-2001 Test methods of laser diodes for fiber optic transmission
KS C 6990-2013 GENERAL RULES OF PHOTODIODES FOR FIBER OPTIC TRANSMISSION
KS C 6991-2013 TEST METHODS OF PHOTODIODES FOR FIBER OPTIC TRANSMISSION
KS C 6990-2001(2011) GENERAL RULES OF PHOTODIODES FOR FIBER OPTIC TRANSMISSION
KS C 5217-1983(1998) RELIABILITY ASSURED RECTIFIER DIODES (MEDIUM AND HIGH CURRENT)
KS C 6991-2001(2011) TEST METHODS OF PHOTODIODES FOR FIBER OPTIC TRANSMISSION
KS C 5217-2002 RELIABILITY ASSURED RECTIFIER DIODES (MEDIUM AND HIGH CURRENT)
KS C 5217-1983 RELIABILITY ASSURED RECTIFIER DIODES (MEDIUM AND HIGH CURRENT)
KS P ISO 10650-2-2009(2014) Dentistry－Powered polymerization activators－Part 2：Light-emitting diode(LED) lamps
KS C IEC 62341-6-1:2020 Organic light emitting diode(OLED) displays — Part 6-1: Measuring methods of optical and electro-optical parameters
KS C IEC 62384:2011 DC or AC supplied electronic control gear for LED modules-Performance requirements
KS C IEC 62341-6:2007 Organic light emitting diode(OLED) displays－Part 6：Measurement methods

Professional Standard - Electron, High Efficiency Photodiode

SJ 2354.9-1983 Method of measurement for noise equivalent power of PIN and avalanche photodiodes
SJ/T 2216-2015 Technical specification for photodiode of silicon
SJ/T 2214-2015 Measuring methods for semiconductor photodiode and phototransistor
SJ/T 2354-2015 Measuring methods for photodiodes of PIN、APD
SJ/T 2354-2015/0352 Measuring methods for photodiodes of PIN、APD
SJ/T 2658.16-2016 Measuring method for semiconductor infrared-emitting diode.Part 16: Photo-electric conversion efficiency
SJ 2354.1-1983 General procedures of measurement for electrical and optical parameters of PIN and avalanche photodiodes
SJ 2354.5-1983 Method of measurement for capacitance of PIN and avalanche photodiodes
SJ 50033/102-1995 Detail specification for InGaAs/InP PIN photodiode for type GD 218
SJ 2214.10-1982 Method of measurement for light current of semiconductor photodiodes and phototransistors
SJ 50033/112-1996 Scmiconductor optoelectronic devices.Detail specification for type GD3251Y photodiodes
SJ 50033/113-1996 Semiconductor optoelectronic devices.Detail specification for type GD3252Y photodiodes
SJ 2354.3-1983 Method of measurement for dark current of PIN and avalanche photodiodes
SJ 20644.1-2001 Semiconductor optoelectronic devices Detail specification for type GD3550Y PIN photodiode
SJ 20644.2-2001 Semiconductor optoelectronic devices Detail specification for type GD101 PIN photodiode
SJ 2354.10-1983 Method of measurement for cross-light factor of PIN and avalanche photodiodes matrix
SJ 2354.6-1983 Method of measurement for responsivity of PIN and avalanche photodiodes
SJ 2354.13-1983 Method of measurement for multiplication factor of PIN and avalanche photodiodes
SJ 2214.3-1982 Method of measurement for dark current of semiconductor photodiodes
SJ 2214.5-1982 Method of measurement for junction capacitance of semiconductor photodiodes
SJ 1230-1977 Methods of measurement for high frequency rectified current of germanium detector diodes
SJ 2354.4-1983 Method of measurement for forward voltage drop of PIN and avalanche photodiodes
SJ 2354.2-1983 Method of measurement for reverse break-down voltage of PIN and avalanche photodiodes
SJ 50033/136-1997 Semiconductor optoelectronic devices.Detail specification for red light emitting diode for type GF116
SJ 50033/143-1999 Semiconductor optoelectronic devices.Detail specification for type GF1120 red emitting diode
SJ 50033/137-1997 Semiconductor optoelectronic devices.Detail specification for orange-red light emitting diode for type GF216
SJ 50033/139-1998 Semiconductor optoelectronic devices.Detail specification for green light-emitting diode for type GF4111
SJ 50033/138-1998 Semiconductor optoelectronic devices.Detail specification for yellow light-emitting diode for type GF318
SJ 50033/58-1995 Semiconductor optoelectronic device Detail specification for green light emitting diode for type GF413
SJ/T 11393-2009 Semiconductor optoelectronic devices-Blank detail specification for power light-emitting diodes
SJ 50033/142-1999 Semiconductor optoelectronic devices.Detail specification for type GF4112 green emitting diode
SJ 50033/57-1995 Semiconductor optoelectronic device Detail specification for red light emitting diode for type GF115
SJ 2354.14-1983 Method of measurement for excess noise factor of PIN and avalanche photodiodes
SJ 2215.6-1982 Method of measurement for junction capacitance of semiconductor photocouplers (diodes)
SJ/T 11866-2022 Semiconductor optoelectronic devices - Detailed specifications for silicon substrate white light power light emitting diodes
SJ/T 11400-2009 Semiconductor optoeletronic devices-Blank detail specification for lower-power light-emitting diodes
SJ 2354.11-1983 Method of measurement for width of blind zone of PIN and avalanche photodiode matrix
SJ 2215.3-1982 Method of measurement for forward current of semiconductor photocouplers (diodes)
SJ 2214.4-1982 Method of measurement for reverse break-down voltage of semiconductor photodiodes
SJ 2215.4-1982 Method of measurement for reverse current of semiconductor photocouplers (diodes)
SJ 50033/99-1995 Semiconductor optoelectronic devices.Detail specification for o/G double colour light emitting diode for type GF511
SJ 20642.7-2000 Semiconductor opto-electronic devices Detail specification for type GR1325J light emitting diode module
SJ/T 11817-2022 Blank detailed specification for light-emitting diodes for semiconductor optoelectronic devices, filament lamps
SJ 2354.7-1983 Method of measurement for spectral response curve and spectral response range of PIN and avalanche photodiodes
SJ 2354.12-1983 Method of measurement for temperature factor of reverse breakdown voltage of PIN and avalanche photodiodes
SJ 50033/109-1996 Semiconductor optoelectronic devices.Detail specification for types GJ9031T and GJ9032T and GJ9034T semiconductor laser diodes
SJ 2354.8-1983 Method of measurement for pulse rise time and fall time of PIN and avalanche photodiodes
SJ 50033/110-1996 Semiconductor optoelectronic devices.Detail specification for type GR9413 infrared light emitting diode
SJ 2215.5-1982 Method of measurement for reverse breakdown voltage of semiconductor photocouplers (diodes)
SJ 53930/1-2002 Semiconductor optoelectronic devices Detail specification for type GR8813 infrared emitting diode
SJ 2658.4-1986 Methods of measurement for semiconductor infrared diodes Methods of measurement for capacitance
SJ/T 10947-1996 Detailed specifications for electronic components - FG341052 and FG343053 semiconductor green light emitting diodes
SJ 2658.3-1986 Methods of measurement for semiconductor infrared diodes Methods of measurement for backward voltage
SJ/T 10948-1996 Detailed specifications for electronic components - FG313052, FG314053, FG313054 and FG314055 semiconductor red light emitting diodes
SJ 2658.5-1986 Methods of measurement for semiconductor infrared diodes Methods of measurement for forward series resistance

PL-PKN, High Efficiency Photodiode

PN T01504-67-1987 Diodes Measuring methods Series equivalent resistance

American National Standards Institute （ANSI), High Efficiency Photodiode

ANSI/TIA/EIA 455-130-2001 Elevated Temperature Life Test for Laser Diodes

TIA - Telecommunications Industry Association, High Efficiency Photodiode

TIA/EIA-455-130-2001 FOTP-130 Elevated Temperature Life Test for Laser Diodes

Japanese Industrial Standards Committee (JISC), High Efficiency Photodiode

JIS C 5990:1997 General rules of photodiodes for fiber optic transmission
JIS C 5991:1997 Measuring methods of photodiodes for fiber optic transmission
JIS R 1697:2015 Absolute measurement of internal quantum efficiency of phosphors for white light emitting diodes using an integrating sphere
JIS C 8156:2011 Self-ballasted LED-lamps for general lighting services by voltage > 50 V -- Safety specifications
JIS C 8156:2017 Self-ballasted LED-lamps for general lighting services by voltage > 50 V -- Safety specifications

Professional Standard - Machinery, High Efficiency Photodiode

JB/T 5186-1991 Silicon photodiodes for cameras

CZ-CSN, High Efficiency Photodiode

CSN 35 8761-1973 Semiconductor devices. Phototransistors photodíodes. Measurement of photoelectric current
CSN 35 8762-1973 Semiconductor devices. Phototransistors photodiodes. Measurement of dark current
CSN 35 8781-1983 Mixing and detection semiconductor UHF diodes Electric parameter Measurement methods

Professional Standard - Post and Telecommunication, High Efficiency Photodiode

YD/T 835-1996 Test method of avalanche photodiodes

邮电部, High Efficiency Photodiode

YD/T 0835-1996 Avalanche photodiode detection method

Group Standards of the People's Republic of China, High Efficiency Photodiode

T/COEMA 004LCD-2022 Polarizer film for the Organic Light-Emitting Diode TV Display
T/CVIA 59-2016 Organic Light Emitting Diode (OLED) TV Measurement Methods
T/CVIA 11-2016 Organic Light Emitting Diode (OLED) TV Measurement Methods
T/CVIA 58-2016 General Technical Requirements for Organic Light Emitting Diode (OLED) TVs
T/CVIA 10-2016 General Technical Requirements for Organic Light Emitting Diode (OLED) TVs
T/CSA 048-2019 Measurement of Electrical and Photometric Characteristics for General Lighting LEDs under Different Currents / Temperatures
T/SUCA 032-2022 Ultra-high definition display device Point to Point (P2P) signal interface protocol for organic light emitting diode display

PT-IPQ, High Efficiency Photodiode

NP 3234-2-1987

国家市场监督管理总局、中国国家标准化管理委员会, High Efficiency Photodiode

GB/T 37949-2019 Purity test method of small molecule materials applied in organic light emitting diode display (OLED)—High performance liquid chromatography (HPLC)
GB/T 36358-2018 Semiconductor optoelectronic devices—Blank detail specification for power light-emitting diodes

NEMA - National Electrical Manufacturers Association, High Efficiency Photodiode

NEMA C78.51-2016 Electric Lamps - LED (Light Emitting Diode) Lamps - Method of Designation
NEMA C78.52-2017 Electric Lamps - LED (Light Emitting Diode) Direct Replacement Lamps - Method of Designation

RU-GOST R, High Efficiency Photodiode

GOST 21011.2-1976 High-voltage kenotrons. The anode current measurement method within the voltage pulse
GOST 21011.3-1977 High-voltage kenotrons. Heater current measuring method
GOST 21011.4-1977 High-voltage kenotrons. Test methods of electric strength
GOST 21011.7-1980 High-voltage kenotrons. The emission current measurement method
GOST R 55241.2-2012 Ergonomics of human-system interaction. Part 309. Organic light-emitting diode displays
GOST 19656.0-1974 Semiconductor UHF diodes. Measurement methods of electrical parameters. General conditions
GOST 21011.0-1975 High-voltage kenotrons. Methods measurements of electric parameters. General requirements
GOST 21011.6-1978 High-voltage kenotrons. Test method for multiple switching on and switching off the heating voltage
GOST 19656.7-1974 Semiconductor UHF detector diodes. Measurement method of current sensitivity
GOST 21107.10-1978 Gas discharge devices. Methods of measurement of electrical parameters of operating and measuring conditions for glow-discharge thyratrons and gas-filled rectifiers
GOST 19656.2-1974 Semiconductor UHF mixer diodes. Measurement method of rectified current
GOST 19656.3-1974 Semiconductor UHF mixer diodes. Measurement methods of output impedance at an intermediate frequency
GOST 19656.10-1988 Semiconductor microwave switching and limiter diodes. Methods of measuring loss resistances
GOST 17038.3-1979 Ionizing-radiation scintillation detectors. Method for measurement of detector light yield of photomultiplier anode current
GOST R IEC 62384-2011 Electronic control gear supplied from the sources of direet or alternative current for light emitted diode modules. Performance requirements
GOST 19656.15-1984 Semiconductor UHF diodes. Measurement methods of thermal resistance and pulse thermal resistance
GOST 19656.1-1974 Semiconductor UHF mixer and detector diodes. Measurement method of voltage standing-wave ratio
GOST 18604.24-1981 Transistors bipolar high-frequency. Techniques for measuring output power, power gain and collector efficiency

RO-ASRO, High Efficiency Photodiode

STAS 12258/2-1984 Optoelectronic semiconductor devices PIIOTODIODES Terminology and essentia] characteristics
STAS 12258/4-1986 Optoelectronic semiconductor devices LIGHT EMITTING DIODES Terminology and main characteristics
STAS 12258/6-1987 OPTOELECTRONIC SEMICON- DUCTOR DEVICES INFRARED EMM1TING DIODES Terminology and essential characteristics

Defense Logistics Agency, High Efficiency Photodiode

DLA MIL-S-19500/230 C VALID NOTICE 4-2011 Semiconductor Device, Diode, Silicon, High-Conductance Type JAN- 1N3207
DLA MIL-DTL-28803/1 E-2013 DISPLAY, OPTOELECTRONIC, SEGMENTED READOUT, BACKLIGHTED, STYLE II (LIGHT EMITTING DIODE), RFI SHIELDED, MOISTURE SEALED, HIGH IMPACT SHOCK, TYPE R01
DLA MIL-DTL-3976/1 B-2007 LIGHT EMITTING DIODE (LED), MARKER CLEARANCE-BLACKOUT, 14 AND 28 VOLT
DLA DSCC-DWG-03021-2003 SEMICONDUCTOR DEVICE, DIODE, SILICON, RECTIFIER, MODULE, HIGH VOLTAGE, 1N5597, 1N5600, 1N5603, TX AND TXV
DLA MIL-PRF-28776/6 E VALID NOTICE 1-2010 Relays, Hybrid, Established Reliability, DPDT, Low Level to 1.0 Ampere Internal Mosfet drive with Zener Diode Gate Protection (Electromechanical Output) Diode Coil Suppression and Terminals with 0.100 Grid Lead Spacing
DLA MIL-PRF-28776/5 G VALID NOTICE 1-2010 Relays, Hybrid, Established Reliability, SPDT, Low-Level to 1.0 Ampere (Transistor Driven) (Electromechanical Output) with Diode Coil Suppression
DLA MIL-PRF-39016/24 F VALID NOTICE 1-2010 Relays, Electromagnetic, Established Reliability, SPDT, Low Level to 1.0 Ampere with Internal Diodes for Coil Transient Suppression and Polarity Reversal Protection
DLA MIL-PRF-39016/28 F VALID NOTICE 1-2010 Relays, Electromagnetic, Established Reliability, SPDT, Low Level to 0.5 Ampere (Latching) with Internal Diodes for Coil Transient Suppression and Polarity Reversal Protection
DLA MIL-PRF-39016/23 F VALID NOTICE 1-2010 RELAYS, ELECTROMAGNETIC, ESTABLISHED RELIABILITY, SPDT, LOW LEVEL TO 1.0 AMPERE WITH INTERNAL DIODE FOR COIL TRANSIENT SUPPRESSION

General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China, High Efficiency Photodiode

GB/T 23729-2009 Photodiodes for scintillation detectors.Test procedures
GB/T 15651.6-2023 Semiconductor Devices Part 5-6: Optoelectronic Devices Light Emitting Diodes
GB/T 42243-2022 General technical specification for organic light emitting diode(OLED) television
GB/T 36359-2018 Semiconductor optoelectronic devices.Blank detail specification for lower power light-emitting diodes
GB/T 36360-2018 Semiconductor optoelectronic devices.Blank detail specification for middle power light-emitting diodes
GB/T 20871.61-2013 Organic light emitting diode (OLED) displays.Part 6-1:Measuring methods of optical and electro-optical parameters
GB/T 13293.9-1991 Higher purity copper cathode.Determiantion of tin content.Zeeman effect electrothermal atomic absorption spectrometric method
GB/T 13293.8-1991 Higher purity copper cathode.Determination of nickel contene.Zeeman effect electrothermal atomic absorption spectrometric method
GB/T 18904.3-2002 Semiconductor devices--Part 12-3: Optoelectronic devices--Blank detail specification for light-emitting diodes--Display application
GB/T 13293.7-1991 Higher purity copper cathode.Determination of iron,cobalt and lead contents.Zeeman effect electrothermal atomic absorption spectrometric method
GB/T 13293.3-1991 Higher purity copper cathode.Determination of bismuth contene.Hydride generation-atomic fluorescence spectrometric method

United States Navy, High Efficiency Photodiode

NAVY MIL-F-24666 NOTICE 1-1999 FILTER ELEMENT, SHIP FUEL SYSTEM PRE-FILTER, NON-CLEANABLE, HIGH EFFICIENCY
NAVY MIL-F-24666 (2)-1994 FILTER ELEMENT, SHIP FUEL SYSTEM PRE-FILTER, NON-CLEANABLE, HIGH EFFICIENCY
NAVY MIL-F-24666-1986 FILTER ELEMENT, SHIP FUEL SYSTEM PRE-FILTER, NON-CLEANABLE, HIGH EFFICIENCY

Society of Automotive Engineers (SAE), High Efficiency Photodiode

SAE J3014-2013 Highly Accelerated Failure Test (HAFT) for Automotive Lamps with LED Assembly

SAE - SAE International, High Efficiency Photodiode

SAE J3014-2018 Highly Accelerated Failure Test (HAFT) for Automotive Lamps with LED Assembly

IEC - International Electrotechnical Commission, High Efficiency Photodiode

TS 62916-2017 Photovoltaic modules – Bypass diode electrostatic discharge susceptibility testing (Edition 1.0)

中华人民共和国国家质量监督检验检疫总局、中国国家标准化管理委员会, High Efficiency Photodiode

GB/T 33762-2017 Method of measurement for display performance of organic light-emitting diode(OLED) television

International Organization for Standardization (ISO), High Efficiency Photodiode

ISO/TR 9241-309:2008 Ergonomics of human-system interaction - Part 309: Organic light-emitting diode (OLED) displays
ISO 20351:2017 Fine ceramics (advanced ceramics, advanced technical ceramics) — Absolute measurement of internal quantum efficiency of phosphors for white light emitting diodes using an integrating sphere

未注明发布机构, High Efficiency Photodiode

BS EN 120008:1995(2000) Specification for Harmonized system of quality assessment for electronic components — Blank detail specification — Light emitting diodes and infrared emitting diodes for fibre optic system or sub - system
BS EN 120006:1993(1999) Specification for Harmonized system of quality assessment for electronic components — Blank detail specification — Pin - photodiodes for fibre optic applications

GB-REG, High Efficiency Photodiode

REG NASA-LLIS-1840--2006 Lessons Learned - CALIPSO Avalanche Photodiode (APD) Detector Assembly Electrical Failure

KR-KS, High Efficiency Photodiode

KS C IEC 62341-6-1-2020 Organic light emitting diode(OLED) displays — Part 6-1: Measuring methods of optical and electro-optical parameters

National Electrical Manufacturers Association（NEMA), High Efficiency Photodiode

NEMA C78.374-2015 Electric Lamps - Light-Emitting Diode Package Specification Sheet for General Illumination Applications

Danish Standards Foundation, High Efficiency Photodiode

DS/EN 62341-6-1:2011 Organic light emitting diode (OLED) displays - Part 6-1: Measuring methods of optical and electro-optical parameters

European Committee for Electrotechnical Standardization（CENELEC）, High Efficiency Photodiode

EN 62341-6-1:2011 Organic light emitting diode (OLED) displays - Part 6-1: Measuring methods of optical and electro-optical parameters

GOSTR, High Efficiency Photodiode

GOST IEC 62341-6-1-2016 Organic light emitting diode (OLED) displays. Part 6-1. Measuring methods of optical and electro-optical parameters

Institute of Electrical and Electronics Engineers (IEEE), High Efficiency Photodiode

IEEE 1789-2015 Recommended Practices for Modulating Current in High-Brightness LEDs for Mitigating Health Risks to Viewers

Military Standard of the People's Republic of China-General Armament Department, High Efficiency Photodiode

GJB 33/15-2011 Semiconductor optoelectronic device.Detail specification for type BT401 semiconductor infrared-emitting diode

Taiwan Provincial Standard of the People's Republic of China, High Efficiency Photodiode

CNS 13780-1996 Endurance Testing Methods for Infrared Emitting Diodes (for Automation)-Continuously Applying Voltage Test
CNS 13090-1992 Method of Endurance Test for Light Emitting Diode Big Lamps (for Outdoor Display)-Continuouus Applying Current Test

American Society for Testing and Materials (ASTM), High Efficiency Photodiode

ASTM F3095-17 Standard Practice for Laser Technologies for Direct Measurement of Cross Sectional Shape of Pipeline and Conduit by Rotating Laser Diodes and CCTV Camera System