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High energy semiconductor laser

High energy semiconductor laser, Total:73 items.

In the international standard classification, High energy semiconductor laser involves: Applications of information technology, Optoelectronics. Laser equipment, Fibre optic communications, Environmental testing, Analytical chemistry, Vocabularies, Semiconductor devices, Ceramics, Integrated circuits. Microelectronics.


British Standards Institution (BSI), High energy semiconductor laser

  • BS IEC 60747-5-4:2022 Semiconductor devices - Optoelectronic devices. Semiconductor lasers
  • BS IEC 60747-5-4:2006 Semiconductor devices - Discrete devices - Optoelectronic devices - Semiconductor lasers
  • 19/30404095 DC BS EN IEC 60747-5-4. Semiconductor devices. Part 5-4. Optoelectronic devices. Semiconductor lasers
  • BS EN 61207-7:2013 Expression of performance of gas analyzers. Tuneable semiconductor laser gas analyzers
  • 23/30473272 DC BS IEC 60747-5-4 AMD 1. Semiconductor devices - Part 5-4. Optoelectronic devices. Semiconductor lasers
  • BS EN 61207-7:2014 Expression of performance of gas analyzers. Tuneable semiconductor laser gas analyzers
  • BS ISO 17915:2018 Optics and photonics. Measurement method of semiconductor lasers for sensing
  • BS EN 62149-9:2014 Fibre optic active components and devices. Performance standards. Seeded reflective semiconductor optical amplifier transceivers
  • BS EN 62149-8:2014 Fibre optic active components and devices. Performance standards. Seeded reflective semiconductor optical amplifier devices

Group Standards of the People's Republic of China, High energy semiconductor laser

General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China, High energy semiconductor laser

  • GB/T 31358-2015 General specification for semiconductor lasers
  • GB/T 31359-2015 Test methods of semiconductor lasers
  • GB 15651.4-2017 Semiconductor devices Discrete devices Part 5-4: Optoelectronic devices Semiconductor lasers
  • GB/T 21548-2008 Methods of measurement of the high speed semiconductor lasers directly modulated for optical fiber communication systems
  • GB/T 18904.2-2002 Semiconductor devices-Part 12-2: Optoelectronic devices-Blank detail specification for laser diodes modules with pigtail for fiber optic systems or sub-systems

International Electrotechnical Commission (IEC), High energy semiconductor laser

  • IEC 60747-5-4:2022 Semiconductor devices - Part 5-4: Optoelectronic devices - Semiconductor lasers
  • IEC 60747-5-4:2006 Semiconductor devices - Discrete devices - Part 5-4: Optoelectronic devices - Semiconductor lasers
  • IEC 61207-7:2013 Expression of performance of gas analyzers - Part 7: Tuneable semiconductor laser gas analyzers
  • IEC 61207-7:2013/COR1:2015 Expression of performance of gas analyzers - Part 7: Tuneable semiconductor laser gas analyzers; Corrigendum 1
  • IEC 62149-9:2014 Fibre optic active components and devices - Performance standards - Part 9: Seeded reflective semiconductor optical amplifier transceivers
  • IEC 62149-8:2014 Fibre optic active components and devices - Performance standard - Part 8: Seeded reflective semiconductor optical amplifier devices
  • IEC 60747-12-2:1995 Semiconductor devices - Part 12: Optoelectronic devices - Section 2: Blank detail specification for laser diode modules with pigtail for fibre optic systems and sub-systems

Jilin Provincial Standard of the People's Republic of China, High energy semiconductor laser

IET - Institution of Engineering and Technology, High energy semiconductor laser

中华人民共和国国家质量监督检验检疫总局、中国国家标准化管理委员会, High energy semiconductor laser

  • GB/T 15651.4-2017 Semiconductor devices—Discrete devices—Part 5-4:Optoelectronic devices—Semiconductor lasers

Professional Standard - Post and Telecommunication, High energy semiconductor laser

  • YD/T 1687.1-2007 Technical Requirements of High Speed Semiconductor Laser Assembly for Optical Fiber Communication Part 1:2.5Gbit/s Cooled Direct Modulation Semiconductor Laser Assembiy
  • YD/T 1687.2-2007 Technidal Requirements of High Speed Semiconductor Laser Assembly for Optical Fiber Communication Part 2:2.5Gbit/s Uncooled Direct Modulation Semiconductor Laser Assembly

国家市场监督管理总局、中国国家标准化管理委员会, High energy semiconductor laser

  • GB/T 21548-2021 Methods of measurement of the high speed semiconductor lasers directly modulated for optical fiber communication systems

Professional Standard - Electron, High energy semiconductor laser

  • SJ 50033/109-1996 Semiconductor optoelectronic devices.Detail specification for types GJ9031T and GJ9032T and GJ9034T semiconductor laser diodes
  • SJ/T 11856.3-2022 Technical Specifications for Semiconductor Laser Chips for Optical Fiber Communications Part 3: Electric Absorption Modulated Semiconductor Laser Chips for Light Sources
  • SJ/T 11856.2-2022 Technical Specifications for Semiconductor Laser Chips for Optical Fiber Communications Part 2: Vertical Cavity Surface Emitting Semiconductor Laser Chips for Light Sources
  • SJ/T 11402-2009 Technical specification of semiconductor laser chip used in optical fiber communication
  • SJ/T 11856.1-2022 Technical Specifications for Semiconductor Laser Chips for Optical Fiber Communications Part 1: Fabry-Perot Type and Distributed Feedback Type Semiconductor Laser Chips for Light Sources
  • SJ 50033/35-1994 Detail specification for type GH30 semiconductor high speed optocoupler

Hebei Provincial Standard of the People's Republic of China, High energy semiconductor laser

  • DB13/T 5120-2019 Specifications for DC performance test of FP and DFB semiconductor laser chips for optical communication

International Organization for Standardization (ISO), High energy semiconductor laser

  • ISO/TS 17915:2013 Optics and photonics.Measurement method of semiconductor lasers for sensing
  • ISO 17915:2018 Optics and photonics - Measurement method of semiconductor lasers for sensing
  • ISO 15632:2021 Microbeam analysis - Selected instrumental performance parameters for the specification and checking of energy-dispersive X-ray spectrometers (EDS) for use with a scanning electron microscope (SEM) or an electron probe microanalyser (EPMA)
  • ISO 15632:2012 Microbeam analysis - Selected instrumental performance parameters for the specification and checking of energy-dispersive X-ray spectrometers for use in electron probe microanalysis
  • ISO 15632:2002 Microbeam analysis - Instrumental specification for energy dispersive X-ray spectrometers with semiconductor detectors

American National Standards Institute (ANSI), High energy semiconductor laser

Association Francaise de Normalisation, High energy semiconductor laser

  • NF C46-251-7*NF EN 61207-7:2014 Expression of performance of gas analyzers - Part 7 : tunable semiconductor laser gas analyzers
  • NF EN 61207-7:2014 Expression des performances des analyseurs de gaz - Partie 7 : analyseurs de gaz laser à semiconducteurs accordables
  • NF X21-008:2012 Microbeam analysis - Selected instrumental performance parameters for the specification and checking of energy-dispersive ray spectrometers for use in electron probe microanalysis
  • NF EN 62149-8:2014 Composants et dispositifs actifs à fibres optiques - Norme de performances - Partie 8 : dispositifs amplificateurs optiques à semiconducteur réfléchissants répartis
  • NF C93-884-8*NF EN 62149-8:2014 Fibre optic active components and devices - Performance standard - Part 8 : seeded reflective semiconductor optical amplifier devices
  • NF C93-884-9*NF EN 62149-9:2014 Fibre optic active components and devices - Performance standards - Part 9 : seeded reflective semiconductor optical amplifier transceivers
  • NF EN 62149-9:2014 Composants et dispositifs actifs à fibres optiques - Normes de performances - Partie 9 : émetteurs-récepteurs amplificateurs optiques à semiconducteur réfléchissants répartis

(U.S.) Telecommunications Industries Association , High energy semiconductor laser

German Institute for Standardization, High energy semiconductor laser

  • DIN 43653:1976-03 High rupturing-capacity fuses for semi-conductor converters
  • DIN EN 61207-7:2015-07 Expression of performance of gas analyzers - Part 7: Tuneable semiconductor laser gas analyzers (IEC 61207-7:2013); German version EN 61207-7:2013 / Note: Applies in conjunction with DIN EN 61207-1 (2011-04).
  • DIN EN 61207-7:2015 Expression of performance of gas analyzers - Part 7: Tuneable semiconductor laser gas analyzers (IEC 61207-7:2013); German version EN 61207-7:2013
  • DIN EN 821-2:1997 Advanced technical ceramics - Monolithic ceramics, thermo-physical properties - Part 2: Determination of thermal diffusity by the laser flash (or heat pulse) method; German version EN 821-2:1997
  • DIN ISO 15632:2015 Microbeam analysis - Selected instrumental performance parameters for the specification and checking of energy-dispersive X-ray spectrometers for use in electron probe microanalysis (ISO 15632:2012)

未注明发布机构, High energy semiconductor laser

ES-UNE, High energy semiconductor laser

  • UNE-EN 61207-7:2013 Expression of performance of gas analyzers - Part 7: Tuneable semiconductor laser gas analyzers (Endorsed by AENOR in January of 2014.)
  • UNE-EN 61207-7:2013/AC:2015 Expression of performance of gas analyzers - Part 7: Tuneable semiconductor laser gas analyzers (Endorsed by AENOR in September of 2015.)
  • UNE-EN 62149-8:2014 Fibre optic active components and devices - Performance standards - Part 8: Seeded reflective semiconductor optical amplifier devices (Endorsed by AENOR in August of 2014.)
  • UNE-EN 62149-9:2014 Fibre optic active components and devices - Performance standards - Part 9: Seeded reflective semiconductor optical amplifier transceivers (Endorsed by AENOR in October of 2014.)

European Committee for Standardization (CEN), High energy semiconductor laser

  • CWA 17857:2022 Lens-based adaptor system for coupling fibre optic to infrared semiconductor lasers
  • EN 821-2:1997 Advanced technical ceramics - Monolithic ceramics - Thermo-physical properties - Part 2: Determination of thermal diffusivity by the laser flash (or heat pulse) method

European Committee for Electrotechnical Standardization(CENELEC), High energy semiconductor laser

  • EN 61207-7:2013 Expression of performance of gas analyzers - Part 7: Tuneable semiconductor laser gas analyzers
  • EN 62149-8:2014 Fibre optic active components and devices - Performance standards - Part 8: Seeded reflective semiconductor optical amplifier devices
  • EN 62149-9:2014 Fibre optic active components and devices - Performance standards - Part 9: Seeded reflective semiconductor optical amplifier transceivers

RU-GOST R, High energy semiconductor laser

  • GOST 17704-1972 Semiconductor devices. Photoelectric receivers of radiant energy. Classification and system designations
  • GOST R 59740-2021 Optics and photonics. Semiconductor lasers for the determination of low concentrations of substances. Methods for measuring characteristics
  • GOST 19834.2-1974 Semiconductor emitters. Methods for measurement of radiant intensity and radiance
  • GOST 19834.3-1976 Semiconductor emitters. Methods for measuring of relative spectral energy distribution and spectral bandwidth

Korean Agency for Technology and Standards (KATS), High energy semiconductor laser

  • KS D ISO 15632:2012 Microbeam analysis-Instrumental specification for energy dispersive X-ray spectrometers with semiconductor detectors

Defense Logistics Agency, High energy semiconductor laser





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