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Semiconductor Energetic Particle Detection
Semiconductor Energetic Particle Detection, Total:49 items.
In the international standard classification, Semiconductor Energetic Particle Detection involves: Radiation measurements, Nuclear energy engineering, Acoustics and acoustic measurements, Semiconductor devices, Analytical chemistry, Electricity. Magnetism. Electrical and magnetic measurements, Optoelectronics. Laser equipment, Semiconducting materials, Space systems and operations, Integrated circuits. Microelectronics.
General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China, Semiconductor Energetic Particle Detection
- GB/T 5201-1994 Test procedures for semiconductor charged particle detectors
- GB/T 5201-2012 Test procedures for semiconductor charged particle detectors
- GB/T 20726-2006 Instrumental specification for energy dispersive X-ray spectrometers with semiconductor detectors
- GB/T 11685-2003 Measurement procedures for semiconductor X-ray detector system and semiconductor X-ray energy spectrometers
- GB/T 43226-2023 Single-event soft error time domain testing method for semiconductor integrated circuits used in aerospace applications
IEEE - The Institute of Electrical and Electronics Engineers@ Inc., Semiconductor Energetic Particle Detection
- IEEE 300-1988 Standard Test Procedures for Semiconductor Charged-Particle Detectors
- IEEE 300-1982 STANDARD TEST PROCEDURES FOR SEMICONDUCTOR CHARGED-PARTICLE DETECTORS
Institute of Electrical and Electronics Engineers (IEEE), Semiconductor Energetic Particle Detection
- IEEE Std 300-1988 IEEE Standard Test Procedures for Semiconductor Charged-Particle Detectors
- ANSI/IEEE Std 300-1982 IEEE Standard Test Procedures for Semiconductor Charged-Particle Detectors
- IEEE/ANSI N42.31-2003 American National Standard for Measurement Procedures for Resolution and Efficiency of Wide-Bandgap Semiconductor Detectors of Ionizing Radiation
International Electrotechnical Commission (IEC), Semiconductor Energetic Particle Detection
- IEC 60333:1993 Nuclear instrumentation; semiconductor charged-particle detectors; test procedures
- IEC 60749-16:2003 Semiconductor devices - Mechanical and climatic test methods - Part 16: Particle impact noise detection (PIND)
Professional Standard - Building Materials, Semiconductor Energetic Particle Detection
- JC/T 2018-2010 Thallium doped cesium iodide crystal for high-energy particles detection
British Standards Institution (BSI), Semiconductor Energetic Particle Detection
- BS EN 60749-16:2003 Semiconductor devices - Mechanical and climatic test methods - Particle impact noise detection (PIND)
SE-SIS, Semiconductor Energetic Particle Detection
- SIS SS IEC 333:1986 Nuclear instrumentation - Testprocedures for semiconductor chargedparticle detectors
- SIS SS IEC 700:1984 Power electronics — Semiconductor valves for high-voltage d.c. power transmission — Testing
American National Standards Institute （ANSI), Semiconductor Energetic Particle Detection
- ANSI/IEEE 300:1988 Test Procedures for Semiconductor Charged-Particle Detectors
- ANSI N42.31-2003 Measurement Procedures for Resolution and Efficiency of Wide-Bandgap Semiconductor Detectors of Ionizing Radiation
Korean Agency for Technology and Standards (KATS), Semiconductor Energetic Particle Detection
- KS C IEC 60749-16:2006 Semiconductor devices－Mechanical and climatic test methods－Part 16：Particle impact noise detection(PIND)
- KS C IEC 60749-16-2006(2016) Semiconductor devices－Mechanical and climatic test methods－Part 16：Particle impact noise detection(PIND)
- KS D ISO 15632:2012 Microbeam analysis－Instrumental specification for energy dispersive X-ray spectrometers with semiconductor detectors
German Institute for Standardization, Semiconductor Energetic Particle Detection
- DIN EN 60749-16:2003 Semiconductor devices - Mechanical and climatic test methods - Part 16: Particle impact noise detection (PIND) (IEC 60749-16:2003); German version EN 60749-16:2003
- DIN EN 60749-44:2017-04 Semiconductor devices - Mechanical and climatic test methods - Part 44: Neutron beam irradiated single event effect (SEE) test method for semiconductor devices (IEC 60749-44:2016); German version EN 60749-44:2016
- DIN 50452-2:2009 Testing of materials for semiconductor technology - Test method for particle analysis in liquids - Part 2: Determination of particles by optical particle counters
- DIN 50452-3:1995-10 Testing of materials for semiconductor technology - Test method for particle analysis in liquids - Part 3: Calibration of optical particle counters
- DIN 50452-1:1995 Testing of materials for semiconductor technology - Test method for particle analysis in liquids - Part 1: Microscopic determination of particles
- DIN EN 60749-16:2003-09 Semiconductor devices - Mechanical and climatic test methods - Part 16: Particle impact noise detection (PIND) (IEC 60749-16:2003); German version EN 60749-16:2003
- DIN 50452-2:1991 Testing of materials for semiconductor technology; test method for particle analysis in liquids; determination of particles with optical particle counters
- DIN ISO 15632:2015 Microbeam analysis - Selected instrumental performance parameters for the specification and checking of energy-dispersive X-ray spectrometers for use in electron probe microanalysis (ISO 15632:2012)
Professional Standard - Electron, Semiconductor Energetic Particle Detection
- SJ 50033/114-1996 Semiconductor optoelectronic devices.Detail specification for type GD3283Y position sensitive detector
Association Francaise de Normalisation, Semiconductor Energetic Particle Detection
- NF EN 60749-44:2016 Dispositifs à semiconducteurs - Méthodes d'essais mécaniques et climatiques - Partie 44 : méthode d'essai des effets d'un événement isolé (SEE) irradié par un faisceau de neutrons pour des dispositifs à semiconducteurs
- NF C53-225:1985 Testing of semiconductor valves for high-voltage D.C. Power transmission.
- NF X21-008:2012 Microbeam analysis - Selected instrumental performance parameters for the specification and checking of energy-dispersive ray spectrometers for use in electron probe microanalysis
RO-ASRO, Semiconductor Energetic Particle Detection
- STAS 6693/2-1975 Semiconductor devices TRANSISTORS Methods for measuring electrical properties
European Committee for Electrotechnical Standardization（CENELEC）, Semiconductor Energetic Particle Detection
- EN 60749-16:2003 Semiconductor devices Mechanical and climatic test methods Part 16: Particle impact noise detection (PIND)
(U.S.) Joint Electron Device Engineering Council Soild State Technology Association, Semiconductor Energetic Particle Detection
- JEDEC JESD57-1996 Test Procedures for the Measurement of Single-Event Effects in Semiconductor Devices from Heavy Ion Irradiation
- JEDEC JESD89A-2006 Measurement and Reporting of Alpha Particle and Terrestrial Cosmic Ray-Induced Soft Errors in Semiconductor Devices
ES-UNE, Semiconductor Energetic Particle Detection
- UNE-EN 60749-44:2016 Semiconductor devices - Mechanical and climatic test methods - Part 44: Neutron beam irradiated single event effect (SEE) test method for semiconductor devices (Endorsed by AENOR in December of 2016.)
- UNE-EN 300386 V1.5.1:2016 Semiconductor devices - Mechanical and climatic test methods - Part 44: Neutron beam irradiated single event effect (SEE) test method for semiconductor devices (Endorsed by AENOR in December of 2016.)
American Society for Testing and Materials (ASTM), Semiconductor Energetic Particle Detection
- ASTM F1192-11 Standard Guide for the Measurement of Single Event Phenomena (SEP) Induced by Heavy Ion Irradiation of Semiconductor Devices
RU-GOST R, Semiconductor Energetic Particle Detection
- GOST 19834.2-1974 Semiconductor emitters. Methods for measurement of radiant intensity and radiance
- GOST R 59605-2021 Optics and photonics. Semiconducting photoelectric detectors. Photoelectric and photoreceiving devices. Terms and definitions
AENOR, Semiconductor Energetic Particle Detection
- UNE-EN 60749-16:2003 Semiconductor devices. Mechanical and climatic test methods. Part 16: Particle impact noise detection (PIND)
International Organization for Standardization (ISO), Semiconductor Energetic Particle Detection
- ISO 15632:2021 Microbeam analysis - Selected instrumental performance parameters for the specification and checking of energy-dispersive X-ray spectrometers (EDS) for use with a scanning electron microscope (SEM) or an electron probe microanalyser (EPMA)
- ISO 15632:2012 Microbeam analysis - Selected instrumental performance parameters for the specification and checking of energy-dispersive X-ray spectrometers for use in electron probe microanalysis
- ISO 15632:2002 Microbeam analysis - Instrumental specification for energy dispersive X-ray spectrometers with semiconductor detectors
Danish Standards Foundation, Semiconductor Energetic Particle Detection
- DS/EN 60749-16:2003 Semiconductor devices - Mechanical and climatic test methods - Part 16: Particle impact noice detection (PIND)
Lithuanian Standards Office , Semiconductor Energetic Particle Detection
- LST EN 60749-16-2003 Semiconductor devices. Mechanical and climatic test methods. Part 16: Particle impact noise detection (PIND) (IEC 60749-16:2003)
Defense Logistics Agency, Semiconductor Energetic Particle Detection