L44 场效应器件 标准查询与下载

SJ 50033/42-1994 半导体分立器件.CSO467型砷化镓微波场效应晶体管详细规范

Semiconductor discrete device.Detail specification for type CSO467 GaAs microwave FET

SJ 50033.53-1994 半导体分立器件.CS0530、CS0531型砷化镓微波功率场效应晶体管详细规范

Semiconductor discrete device.Detail specification for type CS0530 and CS0531 GaAs microwave Power field effect transistor

SJ 50033.54-1994 半导体分立器件.CS0532型砷化镓微波功率场效应晶体管详细规范

Semiconductor discrete device.Detail specification for type CS0532 GaAs microwave power field effect transistor

SJ 50033.52-1994 半导体分立器件.CS0529型砷化镓微波功率场效应晶体管详细规范

semiconductor discrete device.Detail specification for type CS0529 GaAs microwave Power field effect transistor

SJ 50033.51-1994 半导体分立器件.CS0558型砷化镓微波双栅场效应晶体管详细规范

Semiconductor discrete devices.Detail specification for type CS0558 GaAs microwave dual gate FET

SJ 50033/38-1994 半导体分立器件.CS4856～CS4861型硅N沟道耗尽型场效应晶体管详细规范

Semiconductor discrete device.Detail specification for types CS4856～CS4861 silicon N-channel deplition mode field-effect transistor

IEC 60747-8/AMD2:1993 第2次修改

Semiconductor devices; discrete devices; part 8: field-effect transistors; amendment 2

BS QC 750106:1993 电子元件质量评估协调制度规范 半导体分立器件 空白详细规范 用于外壳额定功率放大器应用的场效应晶体管

Specification for harmonized system of quality assessment for electronic components. Semiconductor discrete devices. Blank detail specification. Field-effect transistors for case-rated power amplifier applications

IEC 60747-8-2:1993 半导体器件 分立器件 第8部分:场效应晶体管 第2节:外壳额定功率放大场效应晶体管空白详细规范

The IEC quality assessment system for electronic components is operated in accordance with the statutes of the IEC and under the authority of the IEC. The object of this system is to define quality assessment procedures in such a manner that electronic c

Semicoductor devices; discrete devices; part 8: field-effect transistors; section 2: blank detail specification for field-effect transistors for case-rated power amplifier applications

SJ 20061-1992 半导体分立器件.CS146型硅N沟道耗尽型场效应晶体管.详细规范

Semiconductor discrete device.Detail specification for silicon N-channel deplition mode field-effect transistor of type CS146

SJ 20012-1992 半导体分立器件GP、GT和GCT级CS4型硅N沟道耗尽型场效应晶体管.详细规范

Semiconductor discrete device.Detail specification for silicon N-channel deplition mode field-effect transistor of type CS4. GP, GT and GCT classes

SJ 20013-1992 半导体分立器件GP、GT和GCT级CS10型硅N沟道耗尽型场效应晶体管.详细规范

Semiconductor discrete device.Detail specification for silicon N-channel deplition mode field-effect transistor of type CS10. GP, GT and GCT classes

SJ 20011-1992 半导体分立器件GP、GT和GCT级CS1型硅N沟道耗尽型场效应晶体管.详细规范

Semiconductor discrete device.Detail specification for silicon N-channel deplition mode field-effect transistor of type CS1 GP, GT and GCT classes

EN 150012:1991 空白详细规范.单栅场效应晶体管

Blank detail specification: single gate field-effect transistors

NF C86-712/A2:1987 NF C 86-712-1981补充件2

NF C 86-712-1981 Supplement 2

IEC 60747-8-1:1987 半导体器件 分立器件 第8部分:场效应晶体管 第1节:5W、1GHz以下的单栅场效应晶体管空白详细规范

Applicable to quality assessment for field-effect transistors. Gives specific requirements (included in QC 750112 of the IECQ system), represents the blank detail specification for single-gate field-effect transistors up to 5 W and 1 GHz.

Semiconductor devices - Discret devices. Part 8: Field-effect transistors. Blank detail specification for single-gate field-effect transistors, up to 5 W and 1 GHz.

NF C96-008:1985 半导体器件.分立器件和集成电路.第8部分:场效应晶体管

Semiconductor devices. Discrete devices and integrated circuits. Part 8 : field-effect transistors.

SJ 1995-1981 CS25型低频低噪声场效应半导体对管

Detail specification for N channel junction pair field-effect transistors,Type CS25

SJ 1997-1981 CS27型低频低噪声场效应半导体对管

Detail specification for N channel junction pair field-effect transistors,Type CS27

SJ 1998-1981 CS28型低频低噪声场效应半导体对管

Detail specification for N channel junction pair field-effect transistors,Type CS28