L56 半导体集成电路 标准查询与下载

DLA SMD-5962-02549 REV A-2007 8V单信道线性混合微电路直流/直流转换器

This drawing documents five product assurance classes as defined in paragraph 1.2.3 and MIL-PRF-38534.

MICROCIRCUIT, HYBRID, LINEAR, 8 VOLT, SINGLE CHANNEL, DC/DC CONVERTER

DLA SMD-5962-87507 REV C-2007 硅单块 2-3-2输入是非门,发射极耦合逻辑,数字微型电路

This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.

MICROCIRCUIT, DIGITAL, ECL, 2-3-2 INPUT OR/NOR GATE, MONOLITHIC SILICON

DLA SMD-5962-87506 REV B-2007 硅单块 多路复用器,发射极耦合逻辑,数字微型电路

This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.

MICROCIRCUIT, DIGITAL, ECL, MULTIPLEXER, MONOLITHIC SILICON

DLA SMD-5962-02550 REV A-2007 9V单信道线性混合微电路直流/直流转换器

This drawing documents five product assurance classes as defined in paragraph 1.2.3 and MIL-PRF-38534. A choice of case outlines and lead finishes which are available and are reflected in the Part or Identifying Number (PIN).

MICROCIRCUIT, HYBRID, LINEAR, 9 VOLT, SINGLE CHANNEL, DC/DC CONVERTER

DLA SMD-5962-92189 REV B-2007 硅单片,TTL兼容输入,装有三态输出的8位D型双稳态多谐振荡器,改进型氧化物半导体数字微型电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M)and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.

MICROCIRCUITS, DIGITAL, ADVANCED CMOS, OCTAL D-TYPE FLIP-FLOP WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON

DLA SMD-5962-02548 REV A-2007 3.3V单信道线性混合微电路直流/直流转换器

This drawing documents five product assurance classes as defined in paragraph 1.2.3 and MIL-PRF-38534.

MICROCIRCUIT, HYBRID, LINEAR, 3.3 VOLT, SINGLE CHANNEL, DC/DC CONVERTER

DLA SMD-5962-92190 REV B-2007 硅单片,TTL兼容输入,装有三态输出的8位D型双稳态多谐振荡器,改进型氧化物半导体数字微型电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M)and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.

MICROCIRCUIT, DIGITAL, ADVANCED CMOS, OCTAL D FLIP-FLOP WITH CLOCK ENABLE, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON

DLA SMD-5962-87505 REV C-2007 硅单块 双稳态多谐振荡器触发器,发射极耦合逻辑,数字微型电路

This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.

MICROCIRCUIT, DIGITAL, ECL, FLIP-FLOP, MONOLITHIC SILICON

DLA SMD-5962-06239 REV A-2007 硅单片三态输出平行差探测电路/校正电路,高级氧化物半导体耐辐射数字微型电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.

MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, 16-BIT PARALLEL ERROR DETECTION AND CORRECTION CIRCUIT, WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON

DLA SMD-5962-06238 REV A-2007 硅单片三态输出8比特移位寄存器/存储记录器,高级氧化物半导体耐辐射数字微型电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.

MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, 8-BIT UNIVERSAL SHIFT/STORAGE REGISTER WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON

DLA SMD-5962-93187 REV L-2007 128K X 32位静态随机存取存储器,氧化物半导体数字混合微型电路

This drawing documents five product assurance classes as defined in paragraph 1.2.3 and MIL-PRF-38534. A choice of case outlines and lead finishes which are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of radiation hardness assurance levels are reflected in the PIN.

MICROCIRCUIT, HYBRID, DIGITAL, STATIC RANDOM ACCESS MEMORY, CMOS, 128K X 32-BIT

DLA SMD-5962-90869 REV C-2007 硅单块 互补金属氧化物半导体64K X 8电压消除式可程序化只读存储器,数字主储存器微型电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

MICROCIRCUIT, MEMORY, DIGITAL, CMOS 64K x 8 ELECTRICALLY ERASABLE PROGRAMMABLE READ ONLY MEMORY (EEPROM), MONOLITHIC SILICON

DLA SMD-5962-89567 REV B-2007 硅单片,2K X 9先进先出型氧化物半导体,数字记忆微型电路

This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 2K X 9 FIFO, MONOLITHIC SILICON

DLA SMD-5962-93149 REV C-2007 硅单片,TTL兼容输入,装有三态输出的八位边缘触发的D型双稳态多谐振荡器,改进型氧化物半导体双极数字微型电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.

MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, OCTAL EDGE-TRIGGERED D-TYPE FLIP-FLOP WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON

DLA SMD-5962-86724 REV B-2007 硅单块 八进制缓冲器双极数字微型电路

This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.

MICROCIRCUIT, DIGITAL, BIPOLAR, OCTAL BUFFERS, MONOLITHIC SILICON

DLA SMD-5962-89777 REV C-2007 硅单片,8位交流/直流动画文件转变器,氧化物半导体线性微型电路

This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.

MICROCIRCUIT, LINEAR, CMOS, 8-BIT A/D FLASH, CONVERTER, MONOLITHIC SILICON

DLA SMD-5962-90620 REV A-2007 硅单片,2K X 8双口静态随机存取存储器,氧化物半导体数字记忆微型电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 2K X 8-DUAL PORT STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON

DLA SMD-5962-89666 REV C-2007 硅单片,256 X 9并联先进先出式,氧化物半导体高速数字记忆微型电路

This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 256 X 9 PARALLEL FIFO, MONOLITHIC SILICON

DLA SMD-5962-89694 REV C-2007 硅单片,16K X 4 静态随机存取存储器,氧化物半导体数字记忆微型电路

This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 16 X 4 SRAM, MONOLITHIC SILICON

DLA SMD-5962-94510 REV A-2007 硅单片,紫外线可擦除可程序化逻辑阵列,氧化物半导体数字记忆微型电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M)and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, UV ERASEABLE PROGRAMMABLE LOGIC ARRAY, MONOLITHIC SILICON