L56 半导体集成电路 标准查询与下载

DLA SMD-5962-89666 REV C-2007 硅单片,256 X 9并联先进先出式,氧化物半导体高速数字记忆微型电路

This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 256 X 9 PARALLEL FIFO, MONOLITHIC SILICON

DLA SMD-5962-06244 REV A-2007 硅单片三态输出TTL兼容输入输出,16比特双向收发器,耐辐射高级氧化物半导体数字微型电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M)and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

MICROCIRCUIT, DIGITAL, RADIATION HARDENED CMOS, 16-BIT BIDIRECTIONAL TRANSCEIVER, TTL COMPATIBLE INPUTS, AND THREE-STATE OUTPUTS, MONOLITHIC SILICON

DLA SMD-5962-89694 REV C-2007 硅单片,16K X 4 静态随机存取存储器,氧化物半导体数字记忆微型电路

This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 16 X 4 SRAM, MONOLITHIC SILICON

DLA SMD-5962-06243 REV A-2007 硅单片三态输出TTL兼容输入输出,16比特缓冲/线驱动,耐辐射高级氧化物半导体数字微型电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M)and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

MICROCIRCUIT, DIGITAL, RADIATION HARDENED CMOS, 16-BIT BUFFER/LINE DRIVER, TTL COMPATIBLE INPUTS, AND THREE-STATE OUTPUTS, MONOLITHIC SILICON

DIN EN 61967-4 Berichtigung 1:2007 集成电路.150～1kHz电磁辐射测量.第4部分:用1/150Ω直接耦合法测量传导辐射量

Annex ZA for EN 61967-4:2002/A1:2006 has been added by CENELEC.

Integrated circuits - Measurement of electromagnetic emissions, 150 kHz to 1 GHz - Part 4: Measurement of conducted emissions 1 ohm/150 ohm direct coupling method (IEC 61967-4:2002 + A1:2006); German version EN 61967-4:2002 + A1:2006, Corrigenda to DIN EN

BS DD IEC/TS 62404:2007 逻辑数字集成电路.集成电路用I/O接口模型的规范(IMIC版本1.3)

The following items are considered to standardize the electrical modeling of input signals, output signals, power supply and ground terminals of integrated circuits, in order to provide for analysis of electrical characteristics of equipment. 1) To standardize in order to solve current problems and in order to extend capabilities of analysis, on the basis of results of the past standardization activities. 2) To define more flexible description rules for electric circuits in order to provide more accurate analysis of printed circuit board. 3) To introduce the concept of modeling levels to exchange relevant data for each application. 4) To enhance electrical modeling for packages and modules.

Logic digital integrated circuits - Specification for I/O interface model for integrated circuit (IMIC version 1.3)

BS DD IEC/TS 62228:2007 集成电路.控制器局域网络(CAN)无线电收发器的电磁兼容性(EMC)评估

This document specifies test and measurement methods, test conditions, test setups, test procedures, failure criteria and test signals for the EMC evaluation of CAN transceivers concerning: • the immunity against RF common mode disturbances on the signal lines, • the emissions caused by non-symmetrical signals regarding the time and frequency domain, • the immunity against transients (function and damage), and • the immunity against electrostatic discharges – ESD (damage). All measurements and functional tests except ESD are performed in a small (three transceiver) network. For ESD damage tests a single transceiver configuration on a special test board is used. External protection circuits are not applied during the tests in order to get results for the transceiver IC only.

Integrated circuits - EMC evaluation of CAN transceivers

DLA SMD-5962-00502 REV B-2007 线性混合微电路64通道相对多路器

This drawing documents five product assurance classes as defined in paragraph 1.2.3 and MIL-PRF-38534. A choice of case outlines and lead finishes which are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of radiation hardness assurance levels are reflected in the PIN.

MICROCIRCUIT, HYBRID, LINEAR, 64 CHANNEL, ANALOG MULTIPLEXER

DLA SMD-5962-00520 REV D-2007 单片硅辐射硬化数字线性微电路8通道源驱动器

This drawing documents three product assurance class levels consisting of high reliability (device classes Q and M), space application (device class V) and for appropriate satellite and similar applications (device class T).

MICROCIRCUIT, DIGITAL-LINEAR, RADIATION HARDENED, 8-CHANNEL SOURCE DRIVER, MONOLITHIC SILICON

DLA SMD-5962-06234-2007 硅单片三态输出施密特16比特双向多用记录收发器,高级氧化物半导体耐辐射数字微型电路 多用

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M)and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.

MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, SCHMITT 16-BIT BIDIRECTIONAL MULTI-PURPOSE REGISTERED TRANSCEIVER WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON

DLA SMD-5962-94524 REV A-2007 硅单片,一次可编程逻辑阵列,氧化物半导体数字记忆微型电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN).

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, ONE-TIME PROGRAMMABLE LOGIC ARRAY, MONOLITHIC SILICON

DLA SMD-5962-89734 REV E-2007 硅单片,TTL可兼容输入,六角倒相器,改进型氧化物半导体数字微型电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M)and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are eflected in the PIN.

MICROCIRCUIT, DIGITAL, ADVANCED CMOS, HEX INVERTER, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON

DLA SMD-5962-87555 REV F-2007 硅单块 带三态输出八进制D型透明止动销,高级互补金属氧化物半导体数字微型电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V).

MICROCIRCUIT, DIGITAL, ADVANCED CMOS, OCTAL D-TYPE TRANSPARENT LATCH WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON

DLA SMD-5962-92186 REV B-2007 硅单片,TTL兼容输入,装有正向三态输出的八位缓冲器/线路驱动器,改进型氧化物半导体数字微型电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M)and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.

MICROCIRCUIT, DIGITAL, ADVANCED CMOS, OCTAL BUFFER/LINE DRIVER WITH NONINVERTING THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON

DLA SMD-5962-84097 REV A-2007 硅单片与门,TTL肖脱基高级小功率数字微型电路

This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.

MICROCIRCUIT, DIGITAL, ADVANCED LOW POWER SCHOTTKY TTL, AND GATES MONOLITHIC SILICON

DLA SMD-5962-93221 REV A-2007 硅单片,4000栅场致程序逻辑阵列,氧化物半导体数字记忆微型电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V).

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, FIELD PROGRAMMABLE GATE ARRAY, 4000 GATES, MONOLITHIC SILICON

DLA SMD-5962-87614 REV G-2007 硅单块 四列二输入或门,高级互补金属氧化物半导体,数字微型电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M)and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

MICROCIRCUIT, DIGITAL, ADVANCED CMOS, QUAD TWO-INPUT OR GATE, MONOLITHIC SILICON

DLA SMD-5962-87615 REV E-2007 硅单块 四列二输入是门,高级互补金属氧化物半导体,数字微型电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M)and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

MICROCIRCUIT, DIGITAL, ADVANCED CMOS, QUAD TWO-INPUT AND GATE, MONOLITHIC SILICON

DLA SMD-5962-87622 REV E-2007 硅单块 八选一译码器或去复用器,高级互补金属氧化物半导体,数字微型电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M)and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

MICROCIRCUIT, DIGITAL, ADVANCED CMOS, 1-OF-8 DECODER/DEMULTIPLEXER, MONOLITHIC SILICON

DLA SMD-5962-87624 REV C-2007 硅单块 施米特触发器,六进制转换器,高级互补金属氧化物半导体,数字微型电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

MICROCIRCUIT, DIGITAL, ADVANCED CMOS, HEX INVERTER, SCHMITT TRIGGER, MONOLITHIC SILICON