L56 半导体集成电路 标准查询与下载

DLA SMD-5962-96538 REV C-2007 抗辐射数字的互补金属氧化物半导体四重2输入排外硅单片电路线型微电路

Intended use. Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, QUADRUPLE 2-INPUT EXCLUSIVE OR GATE, MONOLITHIC SILICON

DLA SMD-5962-87612 REV E-2007 硅单块 四列二输入非与门,高级互补金属氧化物半导体,数字微型电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

MICROCIRCUIT, DIGITAL, ADVANCED CMOS, QUAD 2-INPUT NOR GATE, MONOLITHIC SILICON

DLA SMD-5962-93166 REV B-2007 硅单片,32K X 8位功率转换可编程序只读存储器,氧化物半导体数字记忆微型电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, POWER SWITCHED, 32K x 8-BIT PROM, MONOLITHIC SILICON

DLA SMD-5962-05207 REV B-2007 硅单片MIL-STD-1750型指令集结构,16比特微型信息处理机氧化物半导体数字微型电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.

MICROCIRCUIT, DIGITAL, CMOS, 16-BIT MICROPROCESSOR, MIL-STD-1750 INSTRUCTION SET ARCHITECTURE, MONOLITHIC SILICON

DLA SMD-5962-93144 REV B-2007 硅单片,紫外线可消除可程序化逻辑设置,氧化物半导体数字记忆微型电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V).

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, UV ERASABLE PROGRAMMABLE, LOGIC DEVICE, MONOLITHIC SILICON

DLA SMD-5962-89664 REV B-2007 硅单片,可级联64 X 8先进先出式,氧化物半导体数字记忆微型电路

This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, CASCADABLE 64 X 8 FIFO, MONOLITHIC SILICON

BS IEC 60748-4-3:2007 半导体器件.集成电路.接口集成电路.模拟数字转换器(ADC)的动态标准

This part of IEC 60748 specifies a set of measuring methods and requirements for testing ADCs under dynamic conditions, together with associated terminology and characteristics.

Semiconductor devices - Integrated circuits - Interface integrated circuits - Dynamic criteria for analogue-digital converters (ADC)

DLA SMD-5962-89623 REV A-2007 硅单片,视频线路驱动器,数字微型电路

This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.

MICROCIRCUIT, LINEAR, VIDEO LINE DRIVER, MONOLITHIC SILICON

DLA SMD-5962-05214 REV A-2007 硅单片耐辐射可编程序脉冲相位差节拍缓冲器的氧化物半导体数字微型电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.

MICROCIRCUIT, DIGITAL, CMOS, RADIATION HARDENED, PROGRAMMABLE SKEW CLOCK BUFFER, MONOLITHIC SILICON

DLA SMD-5962-92177 REV B-2007 硅单片,装有三态输出的8位双向收发器,改进型氧化物半导体数字微型电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.

MICROCIRCUIT, DIGITAL, ADVANCED CMOS, 8-BIT BIDIRECTIONAL TRANSCEIVER WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON

DLA SMD-5962-89840 REV D-2007 硅单片,EE可编程逻辑阵列,氧化物半导体数字记忆微型电路

This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, EE PROGRAMMABLE ARRAY LOGIC, MONOLITHIC SILICON

DLA SMD-5962-89967 REV A-2007 硅单片,寄存的8K X 8位可程序化只读存储器,氧化物半导体数字记忆微型电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, REGISTERED 8K X 8-BIT PROM, MONOLITHIC SILICON

DLA SMD-5962-96514 REV D-2007 抗辐射互补金属氧化物半导体四重2输入硅单片电路线型微电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M)and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, QUAD 2-INPUT NOR GATE, MONOLITHIC SILICON

DLA SMD-5962-87549 REV F-2007 硅单块 四列二输入是非门,高级互补金属氧化物半导体数字微型电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M)and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

MICROCIRCUIT, DIGITAL, ADVANCED CMOS, QUAD 2-INPUT NAND GATE, MONOLITHIC SILICON

DLA SMD-5962-07210-2007 硅单片512千 X 8比特低压耐辐射静态随机存储器,氧化物半导体数字微型电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M)and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part orIdentifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 512K x 8-BIT (4M), RADIATIONHARDENED, LOW VOLTAGE SRAM, MONOLITHIC SILICON

DLA SMD-5962-87609 REV E-2007 硅单块 八进制高级互补金属氧化物半导体,数字微型电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M)and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

MICROCIRCUIT, DIGITAL, ADVANCED CMOS, HEX INVERTER, MONOLITHIC SILICON

DLA SMD-5962-89817 REV C-2007 硅单片,32K X 8紫外线消除式可程序化只读存储器,氧化物半导体数字记忆微型电路

This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 32K X 8-BIT UVEPROM, MONOLITHIC SILICON

DLA SMD-5962-89815 REV B-2007 硅单片,2K X 8寄存的紫外线消除式可程序化只读存储器,氧化物半导体数字记忆微型电路

This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 2K X 8 REGISTERED UVEPROM, MONOLITHIC SILICON

DLA SMD-5962-05212 REV B-2007 硅单片三态输出的串联输出电阻器,装有总线状态保持16比特双稳态触发电路,低压氧化物半导体数字微型电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M)and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

MICROCIRCUIT, DIGITAL, LOW VOLTAGE CMOS, 16-BIT D-TYPE FLIP-FLOP WITH BUS HOLD, SERIES OUTPUT RESISTORS, AND THREE-STATE OUTPUTS, MONOLITHIC SILICON

DLA SMD-5962-05210 REV B-2007 硅单片三态输出的串联输出电阻器,装有总线状态维持16比特总线缓冲器,低压氧化物半导体数字微型电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M)and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

MICROCIRCUIT, DIGITAL, LOW VOLTAGE CMOS, 16-BIT BUS BUFFER WITH BUS HOLD, SERIES OUTPUT RESISTORS, AND THREE-STATE OUTPUTS, MONOLITHIC SILICON