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semi-carbonized

semi-carbonized, Total:13 items.

In the international standard classification, semi-carbonized involves: Inorganic chemicals, Semiconducting materials, Testing of metals, Conducting materials, Measurement of volume, mass, density, viscosity, Organic chemicals, Semiconductor devices, Electromechanical components for electronic and telecommunications equipment.

RU-GOST R, semi-carbonized

• GOST 5535-1976 Semicoke carburizator. Specifications

Professional Standard - Electron, semi-carbonized

• SJ/T 11864-2022 Semi-insulating silicon carbide single crystal substrate

Group Standards of the People's Republic of China, semi-carbonized

• T/IAWBS 013-2019 The measurement method of resistivity for semi-insulating silicon carbide substrate
• T/ZZB 2283-2021 Ultra-high purity graphite powder for semiconductor silicon carbide crystal
• T/CASAS 009-2019 Determination of Trace Impurities Concentration and Distribution in Semi-insulating SiC Materials by Secondary Ion Mass Spectrometry
• T/ZJATA 0017-2023 Chemical vapor deposition (CVD) epitaxy equipment for preparing silicon carbide semiconductor materials

General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China, semi-carbonized

• GB/T 42271-2022 Test method for resistivity of semi-insulating monocrystalline silicon carbide by contactless measurement

American Society for Testing and Materials (ASTM), semi-carbonized

• ASTM UOP1025-18 Density of Viscous Liquids and Semi-Solid Hydrocarbons by Nitrogen Displacement

British Standards Institution (BSI), semi-carbonized

• BS IEC 63229:2021 Semiconductor devices. Classification of defects in gallium nitride epitaxial film on silicon carbide substrate
• 18/30386543 DC BS EN 63229 Ed.1.0. Semiconductor devices. The classification of defects in gallium nitride epitaxial wafers on silicon carbide substrate
• 19/30404655 DC BS EN IEC 63229. Semiconductor devices. The classification of defects in gallium nitride epitaxial film on silicon carbide substrate

International Electrotechnical Commission (IEC), semi-carbonized

• IEC 63229:2021 Semiconductor devices - Classification of defects in gallium nitride epitaxial film on silicon carbide substrate

Shaanxi Provincial Standard of the People's Republic of China, semi-carbonized

• DB61/T 1250-2019 General Specification for Sic (Silicon Carbide) Material Semiconductor Discrete Devices

Others:   semi-carbonized, Hafnium carbide, boron carbide, pre-carbonized, high carbonation, high temperature carbonization, carbonization, carbonization volatilization, After carbonization, high temperature carbonization, material carbonization, Nitrocarbonation, metal carbide, carbonization+, metal carbide, sodium carbide, Carbonated Fu, pre-carbonization, carbonization machine, Nitrocarbonation.