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Semiconductor chip test

Semiconductor chip test, Total:498 items.

In the international standard classification, Semiconductor chip test involves: Semiconducting materials, Optoelectronics. Laser equipment, Semiconductor devices, Applications of information technology, Integrated circuits. Microelectronics, Fibre optic communications, Cutting tools, Insulating materials, Vocabularies, Testing of metals, Inorganic chemicals, Electromechanical components for electronic and telecommunications equipment, Rectifiers. Convertors. Stabilized power supply, Electronic components in general, Surface treatment and coating, Character sets and information coding, Electricity. Magnetism. Electrical and magnetic measurements, Linear and angular measurements, Radiation measurements, Nuclear energy engineering, Piezoelectric and dielectric devices, Mechanical structures for electronic equipment, Technical drawings, Electrical wires and cables, Environmental testing, Electrical and electronic testing, Electrical accessories, Industrial automation systems, Plastics, Protection against fire, Rubber and plastics products, Electrical engineering in general, Graphical symbols, Acoustics and acoustic measurements.


German Institute for Standardization, Semiconductor chip test

  • DIN 50441-2:1998 Testing of materials for semiconductor technology - Determination of the geometric dimensions of semiconductor wafers - Part 2: Testing of edge profile
  • DIN EN 62258-2:2011-12 Semiconductor die products - Part 2: Exchange data formats (IEC 62258-2:2011); English version EN 62258-2:2011 / Note: DIN EN 62258-2 (2005-12) remains valid alongside this standard until 2014-06-29.
  • DIN EN 60749-19:2011-01 Semiconductor devices - Mechanical and climatic test methods - Part 19: Die shear strength (IEC 60749-19:2003 + A1:2010); German version EN 60749-19:2003 + A1:2010 / Note: DIN EN 60749-19 (2003-10) remains valid alongside this standard until 2013-09-01.
  • DIN 50441-1:1996 Testing of materials for semiconductor technology - Determination of the geometric dimensions of semiconductor wafers - Part 1: Thickness and thickness variation
  • DIN EN 62258-6:2007-02 Semiconductor die products - Part 6: Requirements for information concerning thermal simulation (IEC 62258-6:2006); German version EN 62258-6:2006 / Note: Applies in conjunction with DIN EN 62258-1 (2011-04), DIN EN 62258-2 (2011-12).
  • DIN 50441-5:2001 Testing of materials for semiconductor technology - Determination of the geometric dimensions of semiconductor wafers - Part 5: Terms of shape and flatness deviation
  • DIN 50448:1998 Testing of materials for semiconductor technology - Contactless determination of the electrical resistivity of semi-insulating semi-conductor slices using a capacitive probe
  • DIN EN 62258-5:2007-02 Semiconductor die products - Part 5: Requirements for information concerning electrical simulation (IEC 62258-5:2006); German version EN 62258-5:2006 / Note: Applies in conjunction with DIN EN 62258-1 (2011-04), DIN EN 62258-2 (2011-12).
  • DIN 50441-4:1999 Testing of materials for semiconductor technology - Determination of the geometric dimensions of semiconductor wafers - Part 4: Slice diameter, diamter variation, flat diameter, flat length, flat depth
  • DIN 50445:1992 Testing of materials for semiconductor technology; contactless determination of the electrical resistivity of semiconductor slices with the eddy current method; homogeneously doped semiconductor wafers
  • DIN EN 62047-3:2007 Semiconductor devices - Micro-electromechanical devices - Part 3: Thin film standard test piece for tensile-testing (IEC 62047-3:2006); German version EN 62047-3:2006
  • DIN 50442-1:1981 Testing of semi-conductive inorganic materials; determination of the surface structure of circular monocrystalline semi-conductive slices; as-cut and lapped slices
  • DIN 50435:1988 Testing of semiconductor materials; determination of the radial resistivity variation of silicon or germanium slices by means of the four-probe/direct current method
  • DIN EN 60749-38:2008 Semiconductor devices - Mechanical and climatic test methods - Part 38: Soft error test method for semiconductor devices with memory (IEC 60749-38:2008); German version EN 60749-38:2008
  • DIN EN 62258-2:2011 Semiconductor die products - Part 2: Exchange data formats (IEC 62258-2:2011); English version EN 62258-2:2011
  • DIN 50441-3:1985 Testing of materials for semiconductor technology; measurement of the geometric dimensions of semiconductor slices; determination of flatness deviation of polished slices by means of the multiple beam interference
  • DIN EN 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs) (IEC 62417:2010); German version EN 62417:2010
  • DIN EN 60191-6-16:2007 Mechanical standardization of semiconductor devices - Part 6-16: Glossary of semiconductor tests and burn-in sockets for BGA, LGA, FBGA and FLGA (IEC 60191-6-16:2007); German version EN 60191-6-16:2007
  • DIN EN 60747-16-10:2005 Semiconductor devices - Part 16-10: Technology Approval Schedule (TAS) for monolithic microwave integrated circuits (IEC 60747-16-10:2004); German version EN 60747-16-10:2004
  • DIN 50449-2:1998 Testing of materials for semiconductor technology - Determination of impurity content in semiconductors by infrared absorption - Part 2: Boron in gallium arsenide
  • DIN EN 60749-3:2003 Semiconductor devices - Mechanical and climatic test methods - Part 3: External visual inspection (IEC 60749-3:2002); German version EN 60749-3:2002
  • DIN EN 60749-8:2003 Semiconductor devices - Mechanical and climatic test methods - Part 8: Sealing (IEC 60749-8:2002 + Corr. 1:2003 + Corr. 2:2003); German version EN 60749-8:2003
  • DIN EN 60749-1:2003 Semiconductor devices - Mechanical and climatic test methods - Part 1: General (IEC 60749-1:2002 + Corr. 1:2003); German version EN 60749-1:2003
  • DIN EN 60749-13:2003 Semiconductor devices - Mechanical and climatic test methods - Part 13: Salt atmosphere (IEC 60749-13:2002); German version EN 60749-13:2002
  • DIN EN 62373:2007 Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) (IEC 62373:2006); German version EN 62373:2006
  • DIN EN 60749-2:2003 Semiconductor devices - Mechanical and climatic test methods - Part 2: Low air pressure (IEC 60749-2:2002); German version EN 60749-2:2002
  • DIN EN 60749-44:2017 Semiconductor devices - Mechanical and climatic test methods - Part 44: Neutron beam irradiated single event effect (SEE) test method for semiconductor devices (IEC 60749-44:2016); German version EN 60749-44:2016
  • DIN EN 62047-9:2012 Semiconductor devices - Micro-electromechanical devices - Part 9: Wafer to wafer bonding strength measurement for MEMS (IEC 62047-9:2011); German version EN 62047-9:2011
  • DIN EN 60749-22:2003 Semiconductor devices - Mechanical and climatic test methods - Part 22: Bond strength (IEC 60749-22:200 + Corr. 1:2003); German version EN 60749-22:2003
  • DIN EN 60749-17:2003 Semiconductor devices - Mechanical and climatic test methods - Part 17: Neutron irradiation (IEC 60749-17:2003); German version EN 60749-17:2003
  • DIN EN 60749-36:2003 Semiconductor devices - Mechanical and climatic test methods - Part 36: Acceleration, steady state (IEC 60749-36:2003); German version EN 60749-36:2003
  • DIN EN 60749-25:2004 Semiconductor devices - Mechanical and climatic test methods - Part 25: Temperature cycling (IEC 60749-25:2003); German version EN 60749-25:2003
  • DIN EN 60749-6:2003 Semiconductor devices - Mechanical and climatic test methods - Part 6: Storage at high temperature (IEC 60749-6:2002); German version EN 60749-6:2003
  • DIN EN 60749-12:2003 Semiconductor devices - Mechanical and climatic test methods - Part 12: Vibration, variable frequency (IEC 60749-12:2002); German version EN 60749-12:2002
  • DIN EN 60749-10:2003 Semiconductor devices - Mechanical and climatic test methods - Part 10: Mechanical shock (IEC 60749-10:2002); German version EN 60749-10:2002
  • DIN EN 62416:2010 Semiconductor devices - Hot carrier test on MOS transistors (IEC 62416:2010); German version EN 62416:2010
  • DIN EN 60749-26:2007 Semiconductor devices - Mechanical and climatic test methods - Part 26: Electrostatic discharge (ESD) sensitivity testing - Human body model (HBM) (IEC 60749-26:2006); German version EN 60749-26:2006
  • DIN EN 62047-3:2007-02 Semiconductor devices - Micro-electromechanical devices - Part 3: Thin film standard test piece for tensile-testing (IEC 62047-3:2006); German version EN 62047-3:2006
  • DIN 50439:1982 Testing of materials for semiconductor technology; determination of the dopant concentration profile of single crystalline semiconductor material by means of the capacitancevoltage method and mercury contact
  • DIN EN 60749-39:2007 Semiconductor devices - Mechanical and climatic test methods - Part 39: Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components (IEC 60749-39:2006); German version EN 60749-39:2006
  • DIN EN 60749-4:2003 Semiconductor devices - Mechanical and climatic test methods - Part 4: Damp heat, steady state, highly accelerated stress test (HAST) (IEC 60749-4:2002); German version EN 60749-4:2002
  • DIN EN 60749-4:2017-11 Semiconductor devices - Mechanical and climatic test methods - Part 4: Damp heat, steady state, highly accelerated stress test (HAST) (IEC 60749-4:2017); German version EN 60749-4:2017 / Note: DIN EN 60749-4 (2003-04) remains valid alongside this stand...
  • DIN 41881-1:1976 Semiconductor devices; metal cases with glass insulation, requirements and tests
  • DIN 41881-2:1978 Semiconductor devices; metal cases with ceramic insulation, requirements and tests
  • DIN EN 60749-9:2003 Semiconductor devices - Mechanical and climatic test methods - Part 9: Permanence of marking (IEC 60749-9:2002); German version EN 60749-9:2002

Fujian Provincial Standard of the People's Republic of China, Semiconductor chip test

Professional Standard - Electron, Semiconductor chip test

  • SJ/T 11399-2009 Measurement methods for chips of light emitting diodes
  • SJ/T 10416-1993 Generic Apecification for chip for semiconductor discrete devices
  • SJ/T 11856.3-2022 Technical Specifications for Semiconductor Laser Chips for Optical Fiber Communications Part 3: Electric Absorption Modulated Semiconductor Laser Chips for Light Sources
  • SJ/T 11398-2009 Technical specification for power light-emitting diode chips
  • SJ/T 11856.2-2022 Technical Specifications for Semiconductor Laser Chips for Optical Fiber Communications Part 2: Vertical Cavity Surface Emitting Semiconductor Laser Chips for Light Sources
  • SJ/T 11402-2009 Technical specification of semiconductor laser chip used in optical fiber communication
  • SJ/T 11818.2-2022 Semiconductor UV Emitting Diodes Part 2: Chip Specifications
  • SJ/T 11856.1-2022 Technical Specifications for Semiconductor Laser Chips for Optical Fiber Communications Part 1: Fabry-Perot Type and Distributed Feedback Type Semiconductor Laser Chips for Light Sources
  • SJ/Z 9016-1987 Semiconductor devices--Mechanical and climatic test methods
  • SJ 20079-1992 Test mehods for gas sensors of metal-oxide semiconductor
  • SJ/T 10745-1996 Mechanical and climatic test methods for semiconductor integrated circuits
  • SJ/T 10801-1996 Semiconductor integrated circuits used as interface circuits - General principles of measuring methods for magnetic memory drivers
  • SJ/T 11874-2022 Stress test procedures for semiconductor discrete devices used in electric vehicles
  • SJ/T 11875-2022 Stress test procedures for semiconductor integrated circuits for electric vehicles

Group Standards of the People's Republic of China, Semiconductor chip test

  • T/QGCML 2041-2023
  • T/CIE 144-2022
  • T/ZAQ 10113-2022 Intermittent working life test equipment for semiconductor devices
  • T/IAWBS 009-2019 High Voltage Bias Steady-state Temperature Humidity Test for Power Semiconductor Devices
  • T/ZSA 47-2020 Reliability test methods for power semiconductor devices in electric vehicle applications
  • T/IAWBS 004-2021 General Requirements and Test Methods for Reliability Test of Power Semiconductor Modules Used in Electric Vehicles
  • T/CIE 119-2021 Atmospheric neutron single event effect test methods and procedures for semiconductor devices
  • T/CASAS 015-2022 Power cycling test method for silicon carbide metal-oxide-semiconductor field-effect-transistor(SiC MOSFET)

British Standards Institution (BSI), Semiconductor chip test

  • BS PD CLC/TR 62258-4:2013 Semiconductor die products. Questionnaire for die users and suppliers
  • PD ES 59008-4-1:2001 Data requirements for semiconductor die. Specific requirements and recommendations. Test and quality
  • PD IEC/TR 62258-7:2007 Semiconductor die products. XML schema for data exchange
  • PD ES 59008-5-3:2001 Data requirements for semiconductor die. Particular requirements and recommendations for die types. Minimally-packaged die
  • PD IEC/TR 62258-8:2008 Semiconductor die products. EXPRESS model schema for data exchange
  • PD ES 59008-5-2:2001 Data requirements for semiconductor die. Particular requirements and recommendations for die types. Bare die with added connection structures
  • PD CLC/TR 62258-3:2007 Semiconductor die products. Recommendations for good practice in handling, packing and storage
  • BS EN 62416:2010 Semiconductor devices - Hot carrier test on MOS transistors
  • PD ES 59008-6-2:2001 Data requirements for semiconductor die. Exchange data formats and data dictionary. Data dictionary
  • BS EN 60749-38:2008 Semiconductor devices - Mechanical and climatic test methods - Part 38: Soft error test method for semiconductor devices with memory
  • BS EN 60749-29:2004 Semiconductor devices - Mechanical and climatic test methods - Latch-up test
  • BS EN 60749-29:2003 Semiconductor devices - Mechanical and climatic test methods - Part 29:Latch-up test
  • BS EN 60749:1999 Semiconductor devices - Mechanical and climatic test methods
  • BS EN 62415:2010 Semiconductor devices - Constant current electromigration test
  • BS EN 62418:2010 Semiconductor devices. Metallization stress void test
  • BS EN 60749-44:2016 Semiconductor devices. Mechanical and climatic test methods. Neutron beam irradiated single event effect (SEE) test method for semiconductor devices
  • BS EN 60747-16-10:2004 Semiconductor devices - Technology Approval Schedule (TAS) for monolithic microwave integrated circuits
  • BS EN 60749-3:2002 Semiconductor devices - Mechanical and climatic test methods - External visual examination
  • BS EN 60749-1:2003 Semiconductor devices - Mechanical and climatic test methods - General
  • BS EN 60749-8:2003 Semiconductor devices. Mechanical and climatic test methods. Sealing
  • BS EN 60749-2:2002 Semiconductor devices - Mechanical and climatic test methods - Low air pressure
  • BS EN 60749-10:2002 Semiconductor devices - Mechanical and climatic test methods - Mechanical shock
  • BS EN 60749-13:2002 Semiconductor devices - Mechanical and climatic test methods - Salt atmosphere
  • BS EN 60749-22:2003 Semiconductor devices - Mechanical and climatic test methods - Bond strength
  • BS EN 60749-36:2003 Semiconductor devices - Mechanical and climatic test methods - Acceleration, steady state
  • BS EN 60749-17:2003 Semiconductor devices - Mechanical and climatic test methods - Neutron irradiation
  • BS EN 60749-34:2004 Semiconductor devices - Mechanical and climatic test methods - Power cycling
  • BS EN 60749-21:2005 Semiconductor devices - Mechanical and climatic test methods - Solderability
  • BS EN IEC 60749-13:2018 Semiconductor devices. Mechanical and climatic test methods. Salt atmosphere
  • BS EN 60749-25:2003 Semiconductor devices - Mechanical and climatic test methods - Temperature cycling
  • BS EN 60749-12:2002 Semiconductor devices - Mechanical and climatic test methods - Vibration, variable frequency
  • BS EN 60749-6:2002 Semiconductor devices - Mechanical and climatic test methods - Storage at high temperature
  • BS EN 60749-9:2002 Semiconductor devices - Mechanical and climatic test methods - Permanence of marking
  • BS EN 60749-19:2003 Semiconductor devices - Mechanical and climatic test methods - Die shear strength
  • BS EN 60749-19:2003+A1:2010 Semiconductor devices. Mechanical and climatic test methods. Die shear strength
  • BS EN 60749-39:2006 Semiconductor devices - Mechanical and climatic test methods - Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components
  • BS IEC 62830-5:2021 Semiconductor devices. Semiconductor devices for energy harvesting and generation. Test method for measuring generated power from flexible thermoelectric devices
  • BS EN 60749-23:2004 Semiconductor devices - Mechanical and climatic test methods - High temperature operating life
  • BS EN 60749-21:2011 Semiconductor devices. Mechanical and climatic test methods. Solderability
  • BS 9300:1969 Specification for semiconductor devices of assessed quality: generic data and methods of test
  • IEC TR 63357:2022 Semiconductor devices. Standardization roadmap of fault test method for automotive vehicles
  • BS EN IEC 60749-12:2018 Semiconductor devices. Mechanical and climatic test methods. Vibration, variable frequency
  • BS EN 60749-14:2003 Semiconductor devices - Mechanical and climatic test methods - Robustness of terminations (lead integrity)
  • BS EN 60749-23:2004+A1:2011 Semiconductor devices. Mechanical and climatic test methods. High temperature operating life
  • BS EN 60749-5:2003 Semiconductor devices - Mechanical and climatic test methods - Steady-state temperature humidity bias life test
  • BS EN 60749-11:2002 Semiconductor devices - Mechanical and climatic test methods - Rapid change of temperature - Two-fluid-bath method
  • BS EN 62373:2006 Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET)
  • BS EN 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)
  • BS EN 60749-29:2011 Semiconductor devices. Mechanical and climatic test methods. Latch-up test
  • BS EN 60749-18:2003 Semiconductor devices - Mechanical and climatic test methods - Ionizing radiation (total dose)
  • BS EN 60749-42:2014 Semiconductor devices. Mechanical and climatic test methods. Temperature and humidity storage
  • BS IEC 60747-5-13:2021 Semiconductor devices. Optoelectronic devices. Hydrogen sulphide corrosion test for LED packages
  • BS CECC 00013:1985 Harmonized system of quality assessment for electronic components: basic specification: scanning electron microscope inspection of semiconductor dice
  • BS EN 60749-4:2002 Semiconductor devices - Mechanical and climatic test methods - Damp heat, steady state, highly accelerated stress test (HAST)
  • BS EN 62374-1:2010 Semiconductor devices. Time-dependent dielectric breakdown (TDDB) test for inter-metal layers
  • BS EN 62047-2:2006 Semiconductor devices - Micro-electromechanical devices - Part 2: Tensile testing method of thin film materials
  • BS EN 60749-26:2006 Semiconductor devices - Mechanical and climatic test methods - Electrostatic discharge (ESD) sensitivity testing - Human body model (HBM)
  • BS EN 60749-26:2014 Semiconductor devices. Mechanical and climatic test methods. Electrostatic discharge (ESD) sensitivity testing. Human body model (HBM)
  • BS EN 62047-22:2014 Semiconductor devices. Micro-electromechanical devices. Electromechanical tensile test method for conductive thin films on flexible substrates
  • BS IEC 62047-29:2017 Semiconductor devices. Micro-electromechanical devices - Electromechanical relaxation test method for freestanding conductive thin-films under room temperature
  • BS EN 60749-16:2003 Semiconductor devices - Mechanical and climatic test methods - Particle impact noise detection (PIND)
  • BS EN 62047-10:2011 Semiconductor devices. Micro-electromechanical devices. Micro-pillar compression test for MEMS materials
  • BS EN 62047-21:2014 Semiconductor devices. Micro-electromechanical devices. Test method for Poisson's ratio of thin film MEMS materials
  • BS EN 60749-24:2004 Semiconductor devices - Mechanical and climatic test methods - Accelerated moisture resistance - Unbiased HAST
  • BS EN 62047-6:2010 Semiconductor devices - Micro-electromechanical devices - Axial fatigue testing methods of thin film materials

IPC - Association Connecting Electronics Industries, Semiconductor chip test

中华人民共和国国家质量监督检验检疫总局、中国国家标准化管理委员会, Semiconductor chip test

  • GB/T 35010.4-2018 Semiconductor die products—Part 4: Requirements for die users and suppliers
  • GB/T 35010.6-2018 Semiconductor die products—Part 6: Requirements for concerning thermal simulation
  • GB/T 35010.2-2018 Semiconductor die products—Part 2: Exchange data formats
  • GB/T 35010.5-2018 Semiconductor die products—Part 5:Requirements for concerning electrical simulation
  • GB/T 35010.1-2018 Semiconductor die products—Part 1:Requirements for procurement and use
  • GB/T 35010.7-2018 Semiconductor die products—Part 7: XML schema for data exchange
  • GB/T 35010.8-2018 Semiconductor die products—Part8: EXPRESS model schema for data exchange
  • GB/T 35010.3-2018 Semiconductor die products—Part 3: Guide for handling, packing and storage

European Committee for Electrotechnical Standardization(CENELEC), Semiconductor chip test

  • CLC/TR 62258-4-2013 Semiconductor die products - Part 4: Questionnaire for die users and suppliers
  • CLC/TR 62258-4:2013 Semiconductor die products - Part 4: Questionnaire for die users and suppliers
  • CLC/TR 62258-7:2007 Semiconductor die products - Part 7: XML schema for data exchange
  • CLC/TR 62258-8:2008 Semiconductor die products - Part 8: EXPRESS model schema for data exchange
  • EN 62047-3:2006 Semiconductor devices - Micro-electromechanical devices Part 3: Thin film standard test piece for tensile testing
  • CLC/TR 62258-3:2007 Semiconductor die products - Part 3: Recommendations for good practice in handling, packing and storage
  • EN 62416:2010 Semiconductor devices - Hot carrier test on MOS transistors
  • EN 60749-38:2008 Semiconductor devices - Mechanical and climatic test methods - Part 38: Soft error test method for semiconductor devices with memory
  • EN 60191-6-16:2007 Mechanical standardization of semiconductor devices - Part 6-16: Glossary of semiconductor tests and burn-in sockets for BGA, LGA, FBGA and FLGA
  • EN 62047-9:2011 Semiconductor devices - Micro-electromechanical devices - Part 9: Wafer to wafer bonding strength measurement for MEMS
  • EN 60749-21:2011 Semiconductor devices - Mechanical and climatic test methods - Part 21: Solderability
  • EN IEC 60749-13:2018 Semiconductor devices - Mechanical and climatic test methods - Part 13: Salt atmosphere
  • EN 60749-39:2006 Semiconductor devices - Mechanical and climatic test methods Part 39: Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components
  • EN 60749-3:2017 Semiconductor devices - Mechanical and climatic test methods - Part 3: External visual examination
  • EN IEC 60749-12:2018 Semiconductor devices - Mechanical and climatic test methods - Part 12: Vibration@ variable frequency
  • EN IEC 60749-39:2022 Semiconductor devices - Mechanical and climatic test methods - Part 39: Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components
  • EN 60749-6:2017 Semiconductor devices - Mechanical and climatic test methods - Part 6: Storage at high temperature
  • HD 396-1979 Definitions of Test Method Terms for Semiconductor Radiation Detectors and Scintillation Counting
  • EN 62373:2006 Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET)

Danish Standards Foundation, Semiconductor chip test

  • DS/CLC/TR 62258-4:2013 Semiconductor die products - Part 4: Questionnaire for die users and suppliers
  • DS/ES 59008-5-1:2001 Data requirements for semiconductor die - Part 5-1: Particular requirements and recommendations for die types - Bare die
  • DS/EN 62258-1:2010 Semiconductor die products - Part 1: Procurement and use
  • DS/EN 62258-2:2011 Semiconductor die products - Part 2: Exchange data formats
  • DS/EN 60749-19/A1:2010 Semiconductor devices - Mechanical and climatic test methods - Part 19: Die shear strength
  • DS/EN 60749-19:2003 Semiconductor devices - Mechanical and climatic test methods - Part 19: Die shear strength
  • DS/ES 59008-4-1:2001 Data requirements for semiconductor die - Part 4-1: Specific requirements and recommendations - Test and quality
  • DS/CLC/TR 62258-7:2008 Semiconductor die products - Part 7: XML schema for data exchange
  • DS/CLC/TR 62258-8:2008 Semiconductor die products - Part 8: EXPRESS model schema for data exchange
  • DS/CLC/TR 62258-3:2007 Semiconductor die products - Part 3: Recommendations for good practice in handling, packing and storage
  • DS/EN 60749-38:2008 Semiconductor devices - Mechanical and climatic test methods - Part 38: Soft error test method for semiconductor devices with memory
  • DS/IEC 749:1986 Semiconductor devices. Mechanical and climatic test methods
  • DS/EN 60749-1:2003 Semiconductor devices - Mechanical and climatic test methods - Part 1: General
  • DS/EN 60749-8+Corr.2:2004 Semiconductor devices - Mechanical and climatic test methods - Part 8: Sealing
  • DS/EN 60749-2/Corr.1:2004 Semiconductor devices - Mechanical and climatic test methods - Part 2: Low air pressure
  • DS/EN 60749-13/Corr.1:2004 Semiconductor devices - Mechanical and climatic test methods - Part 13: Salt atmosphere
  • DS/EN 60749-13:2003 Semiconductor devices - Mechanical and climatic test methods - Part 13: Salt atmosphere
  • DS/EN 60749-17:2003 Semiconductor devices - Mechanical and climatic test methods - Part 17: Neutron irradiation
  • DS/EN 60749-22+Corr.1:2004 Semiconductor devices - Mechanical and climatic test methods - Part 22: Bond strenght
  • DS/EN 60749-3:2003 Semiconductor devices - Mechanical and climatic test method - Part 3: External visual examination
  • DS/EN 60749-6/Corr.1:2004 Semiconductor devices - Mechanical and climatic test methods - Part 6: Storage at high temperature
  • DS/EN 60749-6:2003 Semiconductor devices - Mechanical and climatic test methods - Part 6: Storage at high temperature
  • DS/EN 60749-12/Corr.1:2004 Semiconductor devices - Mechanical and climatic test methods - Part 12: Vibration, variable frequency
  • DS/EN 60749-12:2003 Semiconductor devices - Mechanical and climatic test methods - Part 12: Vibration, variable frequency
  • DS/EN 60749-10/Corr.1:2004 Semiconductor devices - Mechanical and climatic test methods - Part 10: Mechanical shock
  • DS/EN 60749-10:2003 Semiconductor devices - Mechanical and climatic test methods - Part 10: Mechanical shock
  • DS/EN 62047-3:2007 Semiconductor devices - Micro-electromechanical devices - Part 3: Thin film standard test piece for tensile testing
  • DS/EN 60749-39:2006 Semiconductor devices - Mechanical and climatic test methods -- Part 39: Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components
  • DS/EN 60749-36:2003 Semiconductor devices - Mechanical and climatic test methods - Part 36: Acceleration, steady state

国家市场监督管理总局、中国国家标准化管理委员会, Semiconductor chip test

  • GB/T 4937.19-2018 Semiconductor devices—Mechanical and climatic test methods—Part 19: Die shear strength
  • GB/T 4937.13-2018 Semiconductor devices—Mechanical and climatic test methods—Part 13: Salt atmosphere
  • GB/T 4937.21-2018 Semiconductor devices—Mechanical and climatic test methods—Part 21: Solderability
  • GB/T 4937.12-2018 Semiconductor devices—Mechanical and climatic test methods—Part 12: Vibration, variable frequency
  • GB/T 4937.22-2018 Semiconductor devices—Mechanical and climatic test methods—Part 22: Bond strength
  • GB/T 4937.17-2018 Semiconductor devices—Mechanical and climatic test methods—Part 17: Neutron irradiation

AENOR, Semiconductor chip test

  • UNE-EN 60749-19:2003/A1:2011 Semiconductor devices - Mechanical and climatic test methods -- Part 19: Die shear strength
  • UNE-EN 60749-19:2003 Semiconductor devices - Mechanical and climatic test methods -- Part 19: Die shear strength
  • UNE-EN 60749-8:2004 Semiconductor devices - Mechanical and climatic test methods -- Part 8: Sealing
  • UNE-EN 60749-1:2004 Semiconductor devices - Mechanical and climatic test methods -- Part 1: General
  • UNE-EN 60749-13:2003 Semiconductor devices - Mechanical and climatic test methods -- Part 13: Salt atmosphere.
  • UNE-EN 60749-17:2003 Semiconductor devices - Mechanical and climatic test methods -- Part 17: Neutron irradiation
  • UNE-EN 60749-22:2004 Semiconductor devices - Mechanical and climatic test methods -- Part 22: Bond strength
  • UNE-EN 60749-34:2011 Semiconductor devices - Mechanical and climatic test methods -- Part 34: Power cycling
  • UNE-EN 60749-25:2004 Semiconductor devices - Mechanical and climatic test methods -- Part 25: Temperature cycling
  • UNE-EN 60749-6:2003 Semiconductor devices - Mechanical and climatic test methods -- Part 6: Storage at high temperature.
  • UNE-EN 60749-36:2004 Semiconductor devices - Mechanical and climatic test methods -- Part 36: Acceleration, steady state

CENELEC - European Committee for Electrotechnical Standardization, Semiconductor chip test

  • ES 59008-5-1-2001 Data Requirements for Semiconductor Die Part 5-1: Particular Requirements and Recommendations for Die Types - Bare Die
  • EN 62258-2:2005 Semiconductor die products Part 2: Exchange data formats
  • EN 62258-2:2011 Semiconductor die products - Part 2: Exchange data formats
  • ES 59008-5-3-2001 Data Requirements for Semiconductor Die - Part 5-3: Particular Requirements and Recommendations for Die Types - Minimally-Packaged Die
  • ES 59008-4-3-1999 Data Requirements for Semiconductor Die Part 4-3: Specific Requirements and Recommendations - Thermal
  • ES 59008-4-2-2000 2001 Data Requirements for Semiconductor Die - Part 4-2: Specific Requirements and Recommendations Handling and Storage
  • ES 59008-4-4-1999 Data Requirements for Semiconductor Die Part 4-4: Specific Requirements and Recommendations Electrical Simulation
  • EN 60749-21:2005 Semiconductor devices Mechanical and climatic test methods Part 21: Solderability
  • ES 59008-4-1-2000 Data Requirements for Semiconductor Die - Part 4-1: Specific Requirements and Recommendations Test and Quality
  • EN IEC 60749-17:2019 Semiconductor devices - Mechanical and climatic test methods - Part 17: Neutron irradiation

General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China, Semiconductor chip test

  • GB/T 36356-2018 Technical specification for power light-emitting diode chips
  • GB/T 36357-2018 Technical specification for middle power light-emitting diode chips
  • GB/T 43136-2023 Superabrasive products: grinding wheels for precision scribing of semiconductor chips
  • GB/T 42706.5-2023 Long-term storage of electronic components and semiconductor devices - Part 5: Chips and wafers
  • GB/T 6616-2023 Non-contact eddy current method for testing semiconductor wafer resistivity and semiconductor film sheet resistance
  • GB/T 13422-2013 Semiconductor converters.Electrical test methods
  • GB/T 4937-1995 Mechanical and climatic test methods for semiconductor devices
  • GB/T 13422-1992 Power semiconductor converters--Electrical test methods
  • GB/T 26070-2010 Characterization of subsurface damage in polished compound semiconductor wafers by reflectance difference spectroscopy method
  • GB/T 3048.3-1994 Test methods for determining electrical properties of electric cables and wires.Measurement of volumeresistivity of semi-conducting rubbers and plastics
  • GB/T 4937.1-2006 Semiconductor devices. Mechanical and climatic test methods. Part 1: General
  • GB/T 6616-2009 Test methods for measuring resistivity of semiconductor wafers or sheet resistance of semiconductor films with a noncontact eddy-current gauge
  • GB/T 4937.2-2006 Semiconductor devices. Mechanical and climatic test methods. Part 2: Low air pressure
  • GB/T 4937.3-2012 Semiconductor devices.Mechanical and climatic tests methods.Part 3:External visual examination
  • GB/T 4937.4-2012v Semiconductor Device Mechanical and Climatic Test Methods Part 4: Highly Accelerated Steady State Damp Heat Test (HAST)
  • GB/T 4937.4-2012 Semiconductor devices.Mechanical and climatic test methods.Part 4:Damp heat,steady state,highly accelerated stress test(HAST)
  • GB/T 3048.3-2007 Test methods for electrical properties of electric cables and wires.Part 3: Test of volume resistivity of semi-conducting rubbers and plastics
  • GB/T 4937.42-2023 Semiconductor devices—Mechanical and climatic test methods—Part 42:Temperature and humidity storage

(U.S.) Joint Electron Device Engineering Council Soild State Technology Association, Semiconductor chip test

  • JEDEC JESD22-B118-2011 Semiconductor Wafer and Die Backside External Visual Inspection
  • JEDEC JESD49A.01-2013 Procurement Standard for Semiconductor Die Products Including Known Good Die (KGD) (Minor Revision of JESD49, SEPTEMBER 2005, Reaffirmed January 2009)

Association Francaise de Normalisation, Semiconductor chip test

ES-UNE, Semiconductor chip test

  • UNE-EN 62258-1:2010 Semiconductor die products -- Part 1: Procurement and use (Endorsed by AENOR in February of 2011.)
  • UNE-EN 62258-2:2011 Semiconductor die products - Part 2: Exchange data formats (Endorsed by AENOR in October of 2011.)
  • UNE-EN 62258-6:2006 Semiconductor die products -- Part 6: Requirements for information concerning thermal simulation(IEC 62258-6:2006) (Endorsed by AENOR in January of 2007.)
  • UNE-EN 62258-5:2006 Semiconductor die products -- Part 5: Requirements for information concerning electrical simulation (IEC 62258-5:2006) (Endorsed by AENOR in January of 2007.)
  • UNE-EN 62435-5:2017 Electronic components - Long-term storage of electronic semiconductor devices - Part 5: Die and wafer devices (Endorsed by Asociación Española de Normalización in May of 2017.)

(U.S.) Telecommunications Industries Association , Semiconductor chip test

  • TIA J-STD-026-1999 Semiconductor Design Standard for Flip Chip Applications IPC/EIA J-STD-026

Hebei Provincial Standard of the People's Republic of China, Semiconductor chip test

  • DB13/T 5120-2019 Specifications for DC performance test of FP and DFB semiconductor laser chips for optical communication

SE-SIS, Semiconductor chip test

Institute of Interconnecting and Packaging Electronic Circuits (IPC), Semiconductor chip test

  • IPC J-STD-026-1999 Semiconductor Design Standard for Flip Chip Applications IPC/EIA J-STD-026

TIA - Telecommunications Industry Association, Semiconductor chip test

  • J-STD-026-1999 Semiconductor Design Standard for Flip Chip Applications (IPC/EIA J-STD-026)

Association of German Mechanical Engineers, Semiconductor chip test

PT-IPQ, Semiconductor chip test

Lithuanian Standards Office , Semiconductor chip test

  • LST EN 62258-2-2011 Semiconductor die products -- Part 2: Exchange data formats (IEC 62258-2:2011)
  • LST EN 60749-19+AC-2003 Semiconductor devices - Mechanical and climatic test methods -- Part 19: Die shear strength (IEC 60749-19:2002)
  • LST EN 60749-19+AC-2003/A1-2011 Semiconductor devices - Mechanical and climatic test methods -- Part 19: Die shear strength (IEC 60749-19:2003/A1:2010)

HU-MSZT, Semiconductor chip test

International Electrotechnical Commission (IEC), Semiconductor chip test

  • IEC 62951-6:2019 Semiconductor devices - Flexible and stretchable semiconductor devices - Part 6: Test method for sheet resistance of flexible conducting films
  • IEC 62047-3:2006 Semiconductor devices - Micro electromechanical devices - Part 3: Thin film standard test piece for tensile-testing
  • IEC 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)
  • IEC 60749:1984 Semiconductor devices. Mechanical and climatic test methods
  • IEC 62415:2010 Semiconductor devices - Constant current electromigration test
  • IEC 60749:2002 Semiconductor devices - Mechanical and climatic test methods
  • IEC 62418:2010 Semiconductor devices - Metallization stress void test
  • IEC 60749-38:2008 Semiconductor devices - Mechanical and climatic test methods - Part 38: Soft error test method for semiconductor devices with memory
  • IEC 62373-1:2020 Semiconductor devices - Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) - Part 1: Fast BTI test for MOSFET
  • IEC 60700:1981 Testing of semiconductor valves for high-voltage d.c. power transmission
  • IEC 60759:1983 Standard test procedures for semiconductor X-ray energy spectrometers
  • IEC 63364-1:2022 Semiconductor devices - Semiconductor devices for IoT system - Part 1: Test method of sound variation detection
  • IEC 62951-1:2017 Semiconductor devices - Flexible and stretchable semiconductor devices - Part 1: Bending test method for conductive thin films on flexible substrates
  • IEC 62951-5:2019 Semiconductor devices - Flexible and stretchable semiconductor devices - Part 5: Test method for thermal characteristics of flexible materials
  • IEC 60749/AMD1:2000 Semiconductor devices - Mechanical and climatic test methods; Amendment 1
  • IEC 60749/AMD2:2001 Semiconductor devices - Mechanical and climatic test methods; Amendment 2
  • IEC 60333:1993 Nuclear instrumentation; semiconductor charged-particle detectors; test procedures
  • IEC 62047-34:2019 Semiconductor devices - Micro-electromechanical devices - Part 34: Test methods for MEMS piezoresistive pressure-sensitive device on wafer
  • IEC 60749-29:2011 Semiconductor devices - Mechanical and climatic test methods - Part 29: Latch-up test
  • IEC 63275-1:2022 Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 1: Test method for bias temperature instability
  • IEC 60191-6-16:2007 Mechanical standardization of semiconductor devices - Part 6-16: Glossary of semiconductor tests and burn-in sockets for BGA, LGA, FBGA and FLGA
  • IEC 60759:1983/AMD1:1991 Standard test procedures for semiconductor X-ray energy spectrometers; amendment 1
  • IEC 60749-3:2002 Semiconductor devices - Mechanical and climatic test methods - Part 3: External visual examination
  • IEC 60749-3:2002/COR1:2003 Semiconductor devices - Mechanical and climatic test methods - Part 3: External visual examination
  • IEC 62047-9:2011 Semiconductor devices - Micro-electromechanical devices - Part 9: Wafer to wafer bonding strength measurement for MEMS
  • IEC 62047-9:2011/COR1:2012 Semiconductor devices - Micro-electromechanical devices - Part 9: Wafer to wafer bonding strength measurement for MEMS
  • IEC 60749-1:2002 Semiconductor devices - Mechanical and climatic test methods - Part 1: General
  • IEC 60749-1:2002/COR1:2003 Semiconductor devices - Mechanical and climatic test methods - Part 1: General
  • IEC 60749-8:2002/COR2:2003 Semiconductor devices - Mechanical and climatic test methods - Part 8: Sealing
  • IEC 60749-8:2002/COR1:2003 Semiconductor devices - Mechanical and climatic test methods - Part 8: Sealing
  • IEC 60749-8:2002 Semiconductor devices - Mechanical and climatic test methods - Part 8: Sealing
  • IEC 63275-2:2022 Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 2: Test method for bipolar degradation due to body diode operatio
  • IEC 60747-16-10:2004 Semiconductor devices - Part 16-10: Technology Approval Schedule (TAS) for monolithic microwave integrated circuits
  • IEC 62830-5:2021 Semiconductor devices - Semiconductor devices for energy harvesting and generation - Part 5: Test method for measuring generated power from flexible thermoelectric devices
  • IEC 60749-26:2003 Semiconductor devices - Mechanical and climatic test methods - Part 26: Electrostatic discharge (ESD) sensitivity testing; Human body model (HBM)
  • IEC 60749-21:2004 Semiconductor devices - Mechanical and climatic test methods - Part 21: Solderability
  • IEC 60749-21:2005 Semiconductor devices - Mechanical and climatic test methods - Part 21: Solderability
  • IEC 60749-21:2011 Semiconductor devices - Mechanical and climatic test methods - Part 21: Solderability
  • IEC 62526:2007 Standard for extensions to Standard Test Interface Language (STIL) for semiconductor design environments
  • IEC 60749-2:2002/COR1:2003 Semiconductor devices - Mechanical and climatic test methods - Part 2: Low air pressure
  • IEC 60749-2:2002 Semiconductor devices - Mechanical and climatic test methods - Part 2: Low air pressure
  • IEC 60749-39:2021 RLV Semiconductor devices - Mechanical and climatic test methods - Part 39: Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components
  • IEC 60749-39:2021 Semiconductor devices - Mechanical and climatic test methods - Part 39: Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components
  • IEC 60747-18-1:2019 Semiconductor devices - Part 18-1: Semiconductor bio sensors - Test method and data analysis for calibration of lens-free CMOS photonic array sensors
  • IEC 60749-10:2002 Semiconductor devices - Mechanical and climatic test methods - Part 10: Mechanical shock
  • IEC 60749-13:2002 Semiconductor devices - Mechanical and climatic test methods - Part 13: Salt atmosphere
  • IEC 60749-17:2003 Semiconductor devices - Mechanical and climatic test methods - Part 17: Neutron irradiation
  • IEC 60749-34:2005 Semiconductor devices - Mechanical and climatic test methods - Part 34: Power cycling
  • IEC 60749-13:2002/COR1:2003 Semiconductor devices - Mechanical and climatic test methods - Part 13: Salt atmosphere
  • IEC 60749-10:2002/COR1:2003 Semiconductor devices - Mechanical and climatic test methods - Part 10: Mechanical shock
  • IEC 60596:1978 Definitions of test method terms for semiconductor radiation detectors and scintillation counting
  • IEC 60749-25:2003 Semiconductor devices - Mechanical and climatic test methods - Part 25: Temperature cycling
  • IEC 60749-34:2004 Semiconductor devices - Mechanical and climatic test methods - Part 34: Power cycling
  • IEC 60749-36:2003 Semiconductor devices - Mechanical and climatic test methods - Part 36: Acceleration, steady state
  • IEC 60749-12:2017 Semiconductor devices - Mechanical and climatic test methods - Part 12: Vibration, variable frequency
  • IEC 60749-22:2002/COR1:2003 Semiconductor devices - Mechanical and climatic test methods - Part 22: Bond strength
  • IEC 60749-22:2002 Semiconductor devices - Mechanical and climatic test methods - Part 22: Bond strength
  • IEC 60749-19:2003/AMD1:2010 Semiconductor devices - Mechanical and climatic test methods - Part 19: Die shear strength test
  • IEC 63284:2022 Semiconductor devices - Reliability test method by inductive load switching for gallium nitride transistors
  • IEC 60749-26:2006 Semiconductor devices - Mechanical and climatic test methods - Part 26: Electrostatic discharge (ESD) sensitivity testing - Human body model (HBM)
  • IEC 62830-6:2019 Semiconductor devices - Semiconductor devices for energy harvesting and generation - Part 6: Test and evaluation methods for vertical contact mode triboelectric energy harvesting devices
  • IEC 62951-8:2023 Semiconductor devices - Flexible and stretchable semiconductor devices - Part 8: Test method for stretchability, flexibility, and stability of flexible resistive memory
  • IEC 60749-4:2002 Semiconductor devices - Mechanical and climatic test methods - Part 4: Damp heat, steady state, highly accelerated stress test (HAST)
  • IEC 60749-4:2017 Semiconductor devices - Mechanical and climatic test methods - Part 4: Damp heat, steady state, highly accelerated stress test (HAST)
  • IEC 60749-6:2002 Semiconductor devices - Mechanical and climatic test methods - Part 6: Storage at high temperature
  • IEC 60749-6:2002/COR1:2003 Semiconductor devices - Mechanical and climatic test methods - Part 6: Storage at high temperature
  • IEC 60749-19:2010 Semiconductor devices - Mechanical and climatic test methods - Part 19: Die shear strength test
  • IEC 62373:2006 Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET)
  • IEC 60749-6:2017 Semiconductor devices - Mechanical and climatic test methods - Part 6: Storage at high temperature

Korean Agency for Technology and Standards (KATS), Semiconductor chip test

  • KS M 1804-2008 Test method of hydrofluoric acid for semi-conductor
  • KS C 6565-2022 Test methods of semiconductor acceleration sensors
  • KS C IEC 60749:2004 Semiconductor devices-Mechanical and climate test methods
  • KS C IEC 60749-2004(2020) Semiconductor devices-Mechanical and climate test methods
  • KS C 6049-1980 Environmental Testing Methods and Endurance Testing Methods for Semiconductor Integrated Circuits
  • KS C IEC 60759:2009 Standard test procedures for semiconductor X-ray energy spectrometers
  • KS C 6049-1980(2020) Environmental Testing Methods and Endurance Testing Methods for Semiconductor Integrated Circuits
  • KS C IEC 62951-1:2022 Semiconductor devices — Flexible and stretchable semiconductor devices — Part 1: Bending test method for conductive thin films on flexible substrates
  • KS C 6046-1978(2001) ENVIRONMENTAL TESTING METHODS AND ENDURANCE TESTING METHODS FOR DISCRETE SEMICONDUCTOR DEVICES
  • KS C 6046-1986 ENVIRONMENTAL TESTING METHODS AND ENDURANCE TESTING METHODS FOR DISCRETE SEMICONDUCTOR DEVICES
  • KS C IEC 60749-3:2002 Discrete semiconductor devices-Mechanical and climatic test methods-Part 3:External visual examination
  • KS C IEC 60749-19:2005 Semiconductor devices-Mechanical and climatic test methods-Part 19:Die shear strength
  • KS C IEC 60749-1:2006 Semiconductor devices-Mechanical and climatic test methods-Part 1:General
  • KS C IEC 60749-8:2006 Semiconductor devices-Mechanical and climatic test methods-Part 8:Sealing
  • KS C IEC 60749-8-2006(2021) Semiconductor devices-Mechanical and climatic test methods-Part 8:Sealing
  • KS C IEC 60749-1-2006(2016) Semiconductor devices-Mechanical and climatic test methods-Part 1:General
  • KS C IEC 60749-1-2006(2021) Semiconductor devices-Mechanical and climatic test methods-Part 1:General
  • KS C IEC 60749-8-2006(2016) Semiconductor devices-Mechanical and climatic test methods-Part 8:Sealing
  • KS C IEC 60749-24-2006(2016) Semiconductor devices-Mechanical and climatic test methods-Part 24:Accelerated moisture resistance-Unbiased HAST
  • KS C IEC 60749-24-2006(2021) Semiconductor devices-Mechanical and climatic test methods-Part 24:Accelerated moisture resistance-Unbiased HAST
  • KS C IEC 60749-2:2004 Semiconductor devices-Mechanical and climatic test methods-Part 2:Low air pressure
  • KS C IEC 60749-21:2005 Semiconductor devices-Mechanical and climatic test methods- Part 21:Solderability
  • KS C IEC 60749-39-2006(2021) Semiconductor devices-Mechanical and climatic test methods-Part 39:Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components
  • KS C IEC 60749-39-2006(2016) Semiconductor devices-Mechanical and climatic test methods-Part 39:Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components
  • KS C IEC 60749-13:2002 Semiconductor devices-Mechanical and climatic test methods-Part 13:Salt atmosphere
  • KS C IEC 60749-22:2004 Semiconductor devices-Mechanical and climatic test methods-Part 22:Bond strength
  • KS C IEC 60749-10:2004 Semiconductor devices-Mechanical and climatic test methods-Part 10:Mechanical shock
  • KS C IEC 60749-17:2006 Semiconductor devices-Mechanical and climatic test methods-Part 17:Neutron irradiation
  • KS C IEC 60749-10:2020 Semiconductor devices — Mechanical and climatic test methods — Part 10: Mechanical shock
  • KS C IEC 60749-17:2021 Semiconductor devices - Mechanical and climatic test methods — Part 17: Neutron irradiation
  • KS C IEC 60749-17-2006(2016) Semiconductor devices-Mechanical and climatic test methods-Part 17:Neutron irradiation
  • KS C IEC 60749-12:2020 Semiconductor devices — Mechanical and climatic test methods — Part 12: Vibration, variable frequency
  • KS C IEC 60749-34-2017(2022) Semiconductor devices-Mechanical and climatic test methods-Part 34:Power cycling
  • KS C IEC 60749-39:2006 Semiconductor devices-Mechanical and climatic test methods-Part 39:Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components
  • KS C IEC 60749-4:2003 Semiconductor devices-Mechanical and climatic test methods-Part 4:Damp heat, steady state, highly accelerated stress test(HAST)
  • KS C IEC 60749-6:2004 Semiconductor devices-Mechanical and climatic test methods-Part 6:Storage at high temperature
  • KS C IEC 60749-9:2020 Semiconductor devices — Mechanical and climatic test methods — Part 9: Permanence of marking

YU-JUS, Semiconductor chip test

Military Standard of the People's Republic of China-General Armament Department, Semiconductor chip test

  • GJB 128-1986 Aerial photographic specification for military topographic mapping
  • GJB 128B-2021 Semiconductor discrete device test methods
  • GJB 762.1-1989 Semiconductor device radiation hardening test method Neutron irradiation test
  • GJB 762.3-1989 Semiconductor device radiation hardening test method γ instantaneous irradiation test
  • GJB 762.2-1989 Semiconductor device radiation hardening test method gamma total dose irradiation test
  • GJB 7678-2012 Test method for 10KeV X-ray irradiation hardening of semiconductor devices
  • GJB 762.1A-2018 Test methods for radiation hardening of semiconductor devices Part 1: Neutron irradiation test
  • GJB 762.3A-2018 Test methods for radiation hardening of semiconductor devices - Part 3: Gamma instantaneous irradiation test
  • GJB 762.2-1989(XG1-2015) Semiconductor device radiation hardening test method γ total dose irradiation test modification sheet 1-2015

KR-KS, Semiconductor chip test

  • KS M 1804-2008(2023) Test method of hydrofluoric acid for semi-conductor
  • KS C IEC 62951-1-2022 Semiconductor devices — Flexible and stretchable semiconductor devices — Part 1: Bending test method for conductive thin films on flexible substrates
  • KS C IEC 60749-17-2021 Semiconductor devices - Mechanical and climatic test methods — Part 17: Neutron irradiation
  • KS C IEC 60749-10-2020 Semiconductor devices — Mechanical and climatic test methods — Part 10: Mechanical shock
  • KS C IEC 60749-34-2017 Semiconductor devices-Mechanical and climatic test methods-Part 34:Power cycling
  • KS C IEC 60749-12-2020 Semiconductor devices — Mechanical and climatic test methods — Part 12: Vibration, variable frequency
  • KS C IEC 60749-9-2020 Semiconductor devices — Mechanical and climatic test methods — Part 9: Permanence of marking

未注明发布机构, Semiconductor chip test

  • GJB 128A-1997 Semiconductor discrete device test methods
  • BS CECC 13:1985(1999) Harmonized system of quality assessment for electronic components : Basic specification : Scanning electron microscope inspection of semiconductor dice

RU-GOST R, Semiconductor chip test

Defense Logistics Agency, Semiconductor chip test

Japanese Industrial Standards Committee (JISC), Semiconductor chip test

  • JIS C 7033:1975 Testing methods for semiconductor rectifier diodes
  • JIS C 7021:1977 Environmental testing methods and endurance testing methods for discrete semiconductor devices
  • JIS C 7022:1979 Environmental testing methods and endurance testing methods for semiconductor integrated circuits

PH-BPS, Semiconductor chip test

  • PNS IEC 62435-5:2021 Electronic components - Long-term storage of electronic semiconductor devices - Part 5: Die and wafer devices
  • PNS IEC 62373-1:2021 Semiconductor devices - Bias-temperature stability test for metal-ox ide, semiconductor, field-effect transistors (MOSFET) - Part 1: Fast BTI test for MOSFET
  • PNS IEC 60749-44:2021 Semiconductor devices - Mechanical and climatic test methods - Part 44: Neutron beam irradiated single event effect (SEE) test method for semiconductor devices
  • PNS IEC 62830-4:2021 Semiconductor devices - Semiconductor devices for energy harvesting and generation - Part 4: Test and evaluation methods for flexible piezoelectric energy harvesting devices
  • PNS IEC 60749-17:2021 Semiconductor devices - Mechanical and climatic test methods - Part 17: Neutron irradiation

American Society for Testing and Materials (ASTM), Semiconductor chip test

  • ASTM F673-90(1996)e1 Standard Test Methods for Measuring Resistivity of Semiconductor Slices or Sheet Resistance of Semiconductor Films with a Noncontact Eddy-Current Gage
  • ASTM E1161-03 Standard Test Method for Radiologic Examination of Semiconductors and Electronic Components
  • ASTM F1892-12(2018) Standard Guide for Ionizing Radiation (Total Dose) Effects Testing of Semiconductor Devices
  • ASTM D6095-99 Standard Test Method for Volume Resistivity for Extruded Crosslinked and Thermoplastic Semiconducting Conductor and Insulation Shielding Materials
  • ASTM D6095-05 Standard Test Method for Volume Resistivity for Extruded Crosslinked and Thermoplastic Semiconducting Conductor and Insulation Shielding Materials
  • ASTM F1892-06 Standard Guide for Ionizing Radiation (Total Dose) Effects Testing of Semiconductor Devices
  • ASTM F1892-04 Standard Guide for Ionizing Radiation (Total Dose) Effects Testing of Semiconductor Devices
  • ASTM F1892-98 Standard Guide for Ionizing Radiation (Total Dose) Effects Testing of Semiconductor Devices
  • ASTM F1892-12 Standard Guide for Ionizing Radiation (Total Dose) Effects Testing of Semiconductor Devices
  • ASTM F978-90(1996)e1 Standard Test Method for Characterizing Semiconductor Deep Levels by Transient Capacitance Techniques
  • ASTM D6095-12(2023) Standard Test Method for Longitudinal Measurement of Volume Resistivity for Extruded Crosslinked and Thermoplastic Semiconducting Conductor and Insulation Shielding Materials
  • ASTM D6095-06 Standard Test Method for Longitudinal Measurement of Volume Resistivity for Extruded Crosslinked and Thermoplastic Semiconducting Conductor and Insulation Shielding Materials
  • ASTM D6095-12 Standard Test Method for Longitudinal Measurement of Volume Resistivity for Extruded Crosslinked and Thermoplastic Semiconducting Conductor and Insulation Shielding Materials

CZ-CSN, Semiconductor chip test

American National Standards Institute (ANSI), Semiconductor chip test

  • ANSI/IEEE 300:1988 Test Procedures for Semiconductor Charged-Particle Detectors
  • ANSI/ASTM E1161:1996 Test Method for Radiologic Examination of Semiconductors and Electronic Components
  • ANSI/ASTM D4325:2013 Test Methods for Nonmetallic Semi-Conducting and Electrically Insulating Rubber Tapes
  • ANSI/IEEE C62.35:2010 Standard Test Methods for Avalanche Junction Semiconductor Surge-Protective Device Components
  • ANSI/UL 2360-2004 Test Methods for Determining the Combustibility Characteristics of Plastics Used in Semi-Conductor Tool Construction
  • ANSI/ASTM D6095:2012 Test Method for Longitudinal Measurement of Volume Resistivity for Extruded Crosslinked and Thermoplastic Semiconducting Conductor and Insulation Shielding Materials

Institute of Electrical and Electronics Engineers (IEEE), Semiconductor chip test

Professional Standard - Aerospace, Semiconductor chip test

  • QJ 10004-2008 Total dose radiation testing method of semiconductor devices for space applications
  • QJ 10005-2008 Test guidelines of single event effects induced by heavy ions of semiconductor devices for space applications

JP-JEITA, Semiconductor chip test

PL-PKN, Semiconductor chip test

  • PN E06171-1985 Fuses for protection of semiconductor devices General requirements and tests
  • PN T01101-1987 Semiconductor devices Mechanical and climatic test methods [Translation of Publication IEC 749 (1984)]

Shaanxi Provincial Standard of the People's Republic of China, Semiconductor chip test

  • DB61/T 1448-2021 Intermittent life test procedures for high-power semiconductor discrete devices

Taiwan Provincial Standard of the People's Republic of China, Semiconductor chip test

  • CNS 5076-1988 Environmental Testing Methods and Endurance Testing Methods for Discrete Semiconductor Devices (Vibration Test)
  • CNS 5073-1988 Environmental Testing Methods and Endurance Testing Methods for Discrete Semiconductor Devices (Shock Test)
  • CNS 5541-1988 Environmental Testing Methods and Endurance Testing Methods for Discrete Semiconductor Devices (Continuous Operation Test of Transistor)
  • CNS 5543-1988 Environmental Testing Methods and Endurance Testing Methods for Discrete Semiconductor Devices (Intermittent Operation Test of Transistor)
  • CNS 5072-1988 Environmental Testing Methods and Endurance Testing Methods for Discrete Semiconductor Devices (Sealing Test)
  • CNS 6117-1988 Environmental Testing Methods and Endurance Testing Methods for Discrete Semiconductor Devices (Damp Heat Test)
  • CNS 5069-1988 Environmental Testing Methods and Endurance Testing Methods for Discrete Semiconductor Devices (Test of Thermal Shock)
  • CNS 6122-1988 Environmental Testing Methods and Endurance Testing Methods for Discrete Semiconductor Devices(Continuous Applying Voltage Test of Thyristors)
  • CNS 6120-1988 Environmental Testing Methods and Endurance Testing Methods for Discrete Semiconductor Devices(Continuous Operation Test of Thyristors)
  • CNS 6124-1988 Environmental Testing Methods and Endurance Testing Methods for Discrete Semiconductor Devices(Intermittent Applying Voltage Test of Thyristors)
  • CNS 6126-1988 Environmental Testing Methods and Endurance Testing Methods for Discrete Semiconductor Devices (High Temperature for Applying Voltage Test of Thyristors)
  • CNS 5070-1988 Environmental Testing Methods and Endurance Testing Methods for Discrete Semiconductor Devices (Cycle Test for Temperature)
  • CNS 5077-1988 Environmental Testing Methods and Endurance Testing Methods for Discrete Semiconductor Devices (Test of Terminal Strength)
  • CNS 5547-1988 1
  • CNS 5075-1988 Environmental Testing Methods and Endurance Testing Methods for Discrete Semiconductor Devices (Test of Constant Acceleration)
  • CNS 5074-1988 Environmental Testing Methods and Endurance Testing Methods for Discrete Semiconductor Devices (Test of Free Fall)
  • CNS 5078-1988 Environmental Testing Methods and Endurance Testing Methods for Discrete Semiconductor Devices (Test of Salt Mist Spray)
  • CNS 6118-1988 1
  • CNS 5542-1988 Environmental Testing Methods and Endurance Testing Methods for Discrete Semiconductor Devices (Continuous Operation Test of Field Effect Transistor
  • CNS 5545-1988 Environmental Testing Methods and Endurance Testing Methods for Discrate Semiconductor Devices Reverse Bias Test of Transistor Under High Temperature)
  • CNS 5544-1988 Environmantal Testing Methods and Endurance Testing Methods for Discrate Semiconductor Devices (Intermittent Operation Test of Fleld Effect Transistor)
  • CNS 5071-1988 Environmental Testing Methods and Endurance Testing Methods for Discrete Semiconductor Devices (Cycle Test for Temperature & Humidity)
  • CNS 5067-1988 Environmental Testing Methods and Endurance Testing Methods for Discrete Semiconductor Devices (Test of Soft Solders for Heat Endurance)
  • CNS 5068-1988 Environmental Testing Methods and Endurance Testing Methods for Discrete Semiconductor Devices (Solderability Testing for Adhesion)
  • CNS 5546-1988 Environmental Testing Methods and Endurance Testing Methods for Discrete Semiconductor Devices (Reverse Bias Test of Field Effect Transistor Under High Temperature)

工业和信息化部, Semiconductor chip test

  • SJ/T 11586-2016 Test method for 10KeV low-energy X-ray total dose irradiation of semiconductor devices

GOSTR, Semiconductor chip test

  • GOST R 57394-2017 Integrated circuits and semiconductor devices. Methods of accelerated tests for non-failure operation

European Committee for Standardization (CEN), Semiconductor chip test

  • HD 396 S1-1979 Definitions of test method terms for semiconductor radiation detectors and scintillation counting

Underwriters Laboratories (UL), Semiconductor chip test

  • UL 2360-2000 Test Methods for Determining the Combustibility Characteristics of Plastics Used in Semi-Conductor Tool Construction

AT-OVE/ON, Semiconductor chip test

  • OVE EN IEC 63275-1:2021 Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 1: Test method for bias temperature instability (IEC 47/2679/CDV) (english version)




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