H83 化合物半导体材料 标准查询与下载

SJ/T 11488-2015 半绝缘砷化镓电阻率、霍尔系数和迁移率测试方法

本标准规定了半绝缘砷化镓单晶电阻率、霍尔系数和霍尔迁移率的测量方法。本标准适用于电阻率在10 Ω·cm~10 Ω·cm范围内的半绝缘砷化镓单晶材料电学参数的测量。

Test method for measuring resistivity, hall coefficient and determining hall mobility in semi-insulating GaAs single crystals

SJ/T 11487-2015 半绝缘半导体晶片电阻率的无接触测量方法

本标准规定了半绝缘半导体晶片电阻率的无接触测量方法。本标准适用于半绝缘砷化镓、磷化铟、碳化硅等高阻半导体材料电阻率的测量,电阻率的测量范围为10 Ω·cm~10 Ω·cm。

Non-contact measurement method for the resistivity of semi-insulating semiconductor wafer

YS/T 979-2014 高纯三氧化二镓

本标准规定了高纯三氧化二镓的要求、检验方法、检验规则和标志、包装、运输、贮存、质量证明书及订货单(或合同)内容等。本标准适用于以高纯镓为原料,经氧化和粉末工艺制得的纯度为99.999 5%和99.999 9%的高纯三氧化二镓。产品供制备白光LED用的荧光粉、三钆石榴石(GGG晶体)和其他材料。

High purity gallium oxide

YS/T 978-2014 单晶炉碳/碳复合材料导流筒

本标准规定了直拉单晶炉用碳/碳复合材料导流筒的要求、试验方法、检验规则、标志、包装、运输、储存、质量证明书和订货单(或合同)内容。本标准适用于直拉单晶炉用碳/碳复合材料导流筒。

Carbon/carbon composites guide shield of single crystal furnace

YS/T 982-2014 氢化炉碳/碳复合材料U形发热体

本标准规定了氢化炉用碳/碳复合材料U形发热体的要求、试验方法、检验规则、标志、包装、运输、储存、质量证明书和订货单(或合同)内容。本标准适用于多晶硅生产领域氢化炉用碳/碳复合材料U形发热体。

Carbon/carbon U shape heating element of hydrogenation furnace

SJ/T 11470-2014 发光二极管外延片

本标准规定了可见光发光二极管外延片(以下简称外延片)的要求、测试方法、检验规则、标志、包装、运输和储存。本标准适用于镓砷磷系、镓铝砷系、铝镓铟磷系及铝镓铟氮系外延片。

Epitaxial wafers of light-emitting diodes

SJ/T 11471-2014 发光二极管外延片测试方法

本标准规定了可见光发光二极管外延片(以下简称外延片)的几何参数、表面缺陷、结构参数及光电参数的测试方法。本标准适用于镓砷磷系、镓铝砷系、铝镓铟磷系及铝镓铟氮系外延片。

Measurement methods for epitaxial wafers of light-emitting diodes

YS/T 977-2014 单晶炉碳/碳复合材料保温筒

本标准规定了直拉单晶炉用碳/碳复合材料保温筒的要求、试验方法、检验规则、标志、包装、运输、储存、质量证明书和订货单(或合同)内容。本标准适用于直拉单晶炉用碳/碳复合材料保温筒,也适用于其他高温真空炉/保护气氛炉用碳/碳复合材料保温筒。

Carbon/carbon composites heat insulation cylinder of single crystal furnace

YS/T 988-2014 羧乙基锗倍半氧化物

Carboxyethyl germanium sesquioxide

SJ/T 11396-2009 氮化镓基发光二极管蓝宝石衬底片

本标准规定了外延氮化镓的高纯蓝宝石单晶抛光衬底片的技术要求、测试方法、检验检测、标志、包装运输和贮存等内容。 本标准适用于制备半导体发光二极管的外延氮化镓的高纯蓝宝石单晶抛光衬底片。

The sapphire substrates for nitride based light-emitting diode

SJ 20858-2002 碳化硅单晶材料电学参数测试方法

Measuring methods for electrical parameters of silicon carbide single crystal material

SJ 20843-2002 砷化镓单晶AB微缺险密度定量检验方法

Quantitative determination of AB microscopic defect density in gallium arsenide single crystal

SJ 20842-2002 砷化镓表面镓砷比的测试方法

Test method for Ga/As ratio of surface of gallium arsenide

SJ 20844-2002 半绝缘砷化镓单晶微区均匀性测试方法

Test method for microzone homogeneity of semi-insulating monocrystal gallium arsenide

DIN 50454-1:2000 半导体工艺材料的检验.Ⅲ-Ⅴ化合物单晶体错位的测定.第1部分:砷化镓

The standard specifies a method for the revelation of dislocations in monocrystals, bar-shaped of gallium arsenide specimens with polished, polished-etched, or sawed surfaceoriented in (111)-Ga and (100) crystal planes using structure etching and the determiantion of the density on the surface and the local distrubution of these dislocations.#,,#

Testing of materials for semiconductor technology - Determination of dislocations in monocrystals of III-V-compound semi-conductors - Part 1: Gallium arsenide

SJ 20714-1998 砷化镓抛光片亚损伤层的X射线双晶衍射试验方法

本标准规定了砷化镓抛光片亚损伤层的X射线双晶衍射试验方法。 本标准适用于经过化学、机械单面和双面抛光的砷化镓晶片亚损伤层的定性测量。

Test method for sub-surface damege of gallium arsenide polished wafer by X-ray double crystal diffraction

DIN 50454-2:1994 半导体工艺材料的检验.Ⅲ-Ⅴ化合物半导体单晶错位腐蚀坑密度的测定.第2部分:铟磷化物

Testing of materials for semiconductor technology - Determination of the dislocation etch pits density in monocrystals of III-V-compound semiconductors - Part 2: Indium phosphide

DIN 50454-3:1994 半导体工艺材料的检验.Ⅲ-Ⅴ化合物半导体单晶错位腐蚀坑密度的测定.第3部分:镓磷化物

The document specifies a test method for determination of the dislocation etch pits densities 100000 cm in monocrystals of gallium phosphide. The method is independent on the electrical resistivity and the conductivity type of the material.

Testing of materials for semiconductor technology - Determination of the dislocation etch pits density in monocrystals of III-V-compound semiconductors - Part 3: Gallium phosphide

ASTM F1530-94 用自动无触点扫描法测量硅片平整度、厚度和厚度变化的标准试验方法

1.1 This test method covers a noncontacting, non-destructive procedure to determine the thickness and flatness of clean, dry, semiconductor wafers in such a way that no physical reference is required. 1.2 This test method is applicable to wafers 50 mm or larger in diameter, and 100 [mu]m (0.004 in.) approximately and larger in thickness, independent of thickness variation and surface finish, and of wafer shape. 1.3 This test method measures the flatness of the front wafer surface as it would appear relative to a specified reference plane when the back surface of the water is ideally flat, as when pulled down onto an ideally clean, flat chuck. It does not measure the free-form shape of the wafer. 1.4 Because no chuck is used as a measurement reference, this test method is relatively insensitive to microscopic particles on the back surface of the wafer. 1.5 The values stated in SI units are to be regarded as the standard. The values given in parentheses are for information only. 1.6 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

Standard Test Method for Measuring Flatness, Thickness, and Thickness Variation on Silicon Wafers by Automated Noncontact Scanning

ASTM F1404-92(2007) 用熔融氢氧化钾腐蚀技术测试砷化镓结晶完整性的标准试验方法

The use of GaAs for semiconductor devices requires a consistent atomic lattice structure. However, lattice or crystal line defects of various types and quantities are always present, and rarely homogeneously distributed. It is important to determine the mean value and the spatial distribution of the etch pit density.1.1 This test method is used to determine whether an ingot or wafer of gallium arsenide is monocrystalline and, if so, to measure the etch pit density and to judge the nature of crystal imperfections. To the extent possible, it follows the corresponding test method for silicon, Test Method F 47. Test Method F 47 also presents the definition of many crystallographic terms, applicable to this test method. 1.2 This procedure is suitable for gallium arsenide crystals with etch pit densities between 0 and 200 000/cm2. 1.3 Gallium arsenide, either doped or undoped, and with various electrical properties, may be evaluated by this test method. The front surface normal direction of the sample must be parallel to the <001> within ± 5° and must be suitably prepared by polishing or etching, or both. Unremoved processing damage may lead to etch pits, obscuring the quality of the bulk crystal. 1.4 This standard does not purport to address all of the safety problems, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and to determine the applicability of regulatory limitations prior to use. Specific hazard statements are given in Section 8.

Test Method for Crystallographic Perfection of Gallium Arsenide by Molten Potassium Hydroxide (KOH) Etch Technique