H83 化合物半导体材料 标准查询与下载

ASTM F1404-92(1999) 用熔融氢氧化钾腐蚀技术测试砷化镓结晶完整性的试验方法

The use of GaAs for semiconductor devices requires a consistent atomic lattice structure. However, lattice or crystal line defects of various types and quantities are always present, and rarely homogeneously distributed. It is important to determine the mean value and the spatial distribution of the etch pit density.1.1 This test method is used to determine whether an ingot or wafer of gallium arsenide is monocrystalline and, if so, to measure the etch pit density and to judge the nature of crystal imperfections. To the extent possible, it follows the corresponding test method for silicon, Test Method F47. Test Method F47 also presents the definition of many crystallographic terms, applicable to this test method. 1.2 This procedure is suitable for gallium arsenide crystals with etch pit densities between 0 and 200000/cm2. 1.3 Gallium arsenide, either doped or undoped, and with various electrical properties, may be evaluated by this test method. The front surface normal direction of the sample must be parallel to the lt;001> within + 5176 and must be suitably prepared by polishing or etching, or both. Unremoved processing damage may lead to etch pits, obscuring the quality of the bulk crystal. 1.4 This standard does not purport to address all of the safety problems, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and to determine the applicability of regulatory limitations prior to use. Specific hazard statements are given in Section 8.

Test Method for Crystallographic Perfection of Gallium Arsenide by Molten Potassium Hydroxide (KOH) Etch Technique

SJ 3249.2-1989 半绝缘砷化镓单晶中碳浓度的红外吸收测试方法

本标准规定了半绝缘砷化镓单晶中碳含量的红外吸收测量原理，仪器设备，样品制备，测量步骤，结果计算和精度。 本标准适用于测定半绝缘砷化镓单晶中替位碳含量，其最低检测限为4.0×10^(14)cm^(-3)

Methods of measurement for Carbon concentration of semi-insulation Gallicem arsenide single crystal by infra-red absorption

SJ 3244.5-1989 砷化镓和磷化铟材料补偿度的测试方法

本标准适用于n型、P型砷化镓和磷化铟单晶及高阻衬底外延层，载流子浓度在1×lO^(12)～5×10^(15)cm^(-3)范围的半导体材料的补偿度的测试分析。原则上也适用于其他Ⅲ－V族化合物材料补偿度的测试分析。

Methods of measurement for compensation degree of Gallium arsenide and Indium phosphide materias

SJ 3244.4-1989 砷化镓和磷化铟材料载流子浓度剖面分布的测试方法.电化学电压电容法

1.1 本标准规定了电化学电压电容法测量的原理、仪器和电解液要求、测量步骤、测量结果的计算。 1.2 本标准适用于载流子浓度10^(14)～10(19)cm^(-3)的n型和P型砷化镓、磷化铟，也适用于铝镓砷和镓铟砷磷材料载流子浓度剖面分布的测量。

Methods of measurement for profile distribution of carrier concentration of Gallium arsenide and Indium phosphide materials--Electrochemical voltage capacitance method

SJ 3249.3-1989 半绝缘砷化镓中铬浓度的红外吸收测试方法

本标准规定了半绝缘砷化镓中铬浓度的红外吸收测量原理、仪器设备、测量步骤、结果计算和精度等。 本标准适用于掺铬水平法生长半绝缘砷化镓中Cr浓度的测定，适于样品厚度2～4mm。不适于铬浓度大于1.5×10^(17)cm^(-3)的试样。

Methods of measurement for chromium concentration in semi-insulation Gallium arsenide by infra-red absorption

SJ 3249.1-1989 半绝缘砷化镓和磷化铟体单晶材料的电阻率测试方法

本标准规定了半绝缘砷化镓和磷化铟体单晶材料电阻率的测量原量，仪器设备，测量步骤，计算方法。 本标准适用于室温电阻率为10^(6)～10^(8)Ω·cm均匀的砷化镓和磷化铟体单品半绝缘材料、电阻率在10^(4)～10^(5)Ω·cm时也可参照使用。

Methods of measurement for resistivity of semi-insulation Gallium arsenide and Indium phosphide single crystal material

SJ 3248-1989 重掺砷化镓和磷化铟载流子浓度的红外反射测试方法

本标准规定了红外反射法测量重掺砷化镓和磷化铟载流子浓度的测量原理，仪器设备、样品制备、测量步骤。结果计算和精度等。 本标准适用于测量重掺砷化镓和磷化锢单晶载流子浓度，也适用于测量外延层的载流子浓度。

Methods for measuring carrier concentration of readded Gallium arsenide and Indium phosphide by infra-red reflection

SJ 3244.3-1989 砷化镓、磷化铟单晶晶向的测量方法

本标准规定了砷化镓、磷化铟单晶锭端面及晶片晶向的X射线衍射测量原理、测量步骤、结果计算以及精度。 本标准适用于晶片表面大体平行于(10^(·)以内)某一低密勒指数原子面的单晶片的晶向测定。

Methods of measurement for crystal-orientation of single crystal of Gallium arsenide and Indium phosphide

SJ 3244.2-1989 砷化镓、磷化铟衬底与异质结外延层之间晶格失配的测量方法

本标准规定了异质结外延层与衬底之间晶格失配的测量原理、步骤、计算方法。 本标准适田于以下范围：外延层表面晶向偏差小于1.5^(·)。多层外延层总厚度不大于10μm。

Methods of measurement for crystal lattice mismatch between substrate of Gallium arsenide and Indium phosphide and extended layer of heterojunction

SJ 3242-1989 砷化镓外延片

本标准规定了砷化镓气相外延片和液相外延片的牌号命名法、技术要求、试验方法、检验规则、标志、包装、运输和贮存。 本标准适用于制备场效应晶体管、变容二极管。霍耳器件及耿氏器件用的砷化镓外延片。

Gallium arsenide epitaxy wafers

SJ 3241-1989 砷化镓单晶棒及片

本标准规定了液封直拉法(LEG)和水平横拉法(HB)制备的砷化镓单晶棒、片牌号的命名方法、技术要求、试验方法、检验规则、标志、包装、运输和贮存。 本标准适用于微波器件、光电器件及集成电路衬底等用的液封直拉法和水平横拉法制备的砷化镓单晶棒片。

Gallium arsenide single-crystal bar and wafer

SJ 3247-1989 同型砷化镓外延层厚度的红外干涉测试方法

本标准规定了与衬底同型砷化镓外延层厚度的红外干涉测量原理，仪器设备，样品制备测量步骤，结果计算和精度。 本标准适用于与衬底同型砷化镓外延层厚度的测量，衬底和外延层室温电阻率应分别小于0.02Ω cm和大于0.1ΩZ·cm，可测厚度大于2μm。

Methods of measurement for extended-layer thickness of same-type Gallium arsenide by infra-red interference

SJ 3244.1-1989 砷化镓和磷化铟材料霍尔迁移率和载流子浓度的测量方法

本标准规定了砷化镓和磷化铟材料霍尔迁移率和载流子浓度的测量原理，测量步骤，试验结果的讣算，精度。 本标准适用于电阻牢小于10^(4)Ωcm的砷化镓和磷化铟材料(包括半绝缘衬底上生长的砷化镓外延层)霍尔迁移率和载流子浓度的测量。也适用于其它半导体材料的测量。由于霍尔迁移率是由霍尔系数和电阻率汁算出来的，所以本标准又适用于这两个参数的单个测量。

Methods of measurement for hall mobility and carrier concentration of Gallium arsenide and Indium phosphide

SJ 3246-1989 铝镓砷(AlxGa1-x As)材料中铝组分的光荧光测试方法

本标准规定了铝镓砷材料中铝组分的测量原理，测量步骤，试验结果和精度。 本标准适用于确定铝镓砷的光荧光峰值波长和相应铝的摩尔百分比。铝含量的适用范围为x=0～45%，相应于室温下(297K)铝镓砷的峰值波长λpL=871.6～613.2nm。

Methods for measuring Aluminium component in Aluminium-Gallium-Arsenic by phosphors method

SJ 3245-1989 磷化铟单晶位错的测量方法

本标准规定了磷化铟单晶(100)面和(111)In面位错的腐蚀显示及显微测量的原理、仪器试剂、测量步骤。 本标准适用于位错密度在0～10^(5)/cm^(2)范围的单晶测量，被检测晶面的晶向偏差在5°以内。

Methods for measuring dislocation of Indium phosphide single-crystal

ASTM F1212-89(1996)e1 砷化镓晶片热稳定性的试验方法

1.1 This destructive test method determines whether a given sample of semi-insulating gallium arsenide (GaAs) will remain semi-insulating after exposure to the high temperatures normally required for the activation of implanted layers. 1.2 The underlying assumption is that other wafers of GaAs, whose manufacturing history was the same as the wafer from which the test sample was taken, will respond to high temperatures in like manner. 1.3 The emphasis in this test method is on simplicity and safety of apparatus, and on securing a measurement that is independent of the apparatus used. 1.4 This test method is directly applicable to uncapped and unimplanted samples of GaAs. However, users of this test method may extend it to capped or implanted samples, or both, in which case a controlled test of capped versus uncapped samples, or implanted versus unimplanted samples, is recommended. 1.5 This test method detects impurities "from the bulk" (that is, from within the GaAs wafer) that will likely affect the electrical behavior of devices formed on the surface of the wafer. This test method is not sensitive to surface impurities or process-induced impurities, except as interferences (see Interferences). 1.6

Standard Test Method for Thermal Stability Testing of Gallium Arsenide Wafers

ASTM F1212-89(2002) 砷化镓晶片热稳定性的试验方法

1.1 This destructive test method determines whether a given sample of semi-insulating gallium arsenide (GaAs) will remain semi-insulating after exposure to the high temperatures normally required for the activation of implanted layers. 1.2 The underlying assumption is that other wafers of GaAs, whose manufacturing history was the same as the wafer from which the test sample was taken, will respond to high temperatures in like manner. 1.3 The emphasis in this test method is on simplicity and safety of apparatus, and on securing a measurement that is independent of the apparatus used. 1.4 This test method is directly applicable to uncapped and unimplanted samples of GaAs. However, users of this test method may extend it to capped or implanted samples, or both, in which case a controlled test of capped versus uncapped samples, or implanted versus unimplanted samples, is recommended. 1.5 This test method detects impurities "from the bulk" (that is, from within the GaAs wafer) that will likely affect the electrical behavior of devices formed on the surface of the wafer. This test method is not sensitive to surface impurities or process-induced impurities, except as interferences (see Interferences). 1.6

Standard Test Method for Thermal Stability Testing of Gallium Arsenide Wafers

SJ 3249.4-1989

本标准规定了半绝缘砷化镓中深施主浓度EI2的红外吸收测量原理、仪器设备、测量步骤、结果计算和精度。 本标准适用于非掺杂半绝缘砷化镓中EI2浓度的测定，适用于试样厚度2～4mm。不适于测量掺铬半绝缘样品中的EL2浓度。