共找到 223 条与 半导体二极管 相关的标准,共 15 页
NF C 86-612-1981 Supplement 2
本空白详细规范规定了制订阶跃恢复二极管详细规范的基本原则,制订该范围内的所有详细规范应与本空白详细规范一致。 本空白详细规范是与GB4936.1-85《半导体分立器件总规范》有关的一系列空白详细规范中的一个。
Blank detail specification for step-function recovery diodes
JEDEC standards and publications contain material that has been prepared, reviewed, and approved through the JEDEC Board of Directors level and subsequently reviewed and approved by the JEDEC legal counsel.
Thermal Resistance Test Method for Signal and Regulator Diodes (Forward Voltage, Switching Method) Reaffirmation of ANSI/EIA-531-1986, Previously Published as IS-13; Replaces JEDEC JEP 90
Semiconductor devices. Discrete devices and integrated circuits. Part 3 : signal (including switching) and regulator diodes.
Semiconductor devices. Discrete devices. Recommendations for signal (including switching) and regulator diodes
General details, terminology and letter symbols, essential ratings and characteristics and measuring methods.
Semiconductor devices - Discrete devices - Recommendations for signal (including switching) and regulator diodes
Applicable to quality assessment for signal diodes, switching diodes and controlled avalanche diodes. Gives specific requirements (included in QC 750001 of the IECQ system), represents the blank detail specification.
Semiconductor devices. Discrete devices. Part 3 : Signal (including switching) and regulator diodes. Section One: Blank detail specification for signal diodes, switching diodes and controlled-avalanche diodes
Applicable to quality assessment for voltage-regulator diodes and voltage-reference diodes, excluding temperature-compensated precision reference diodes. Gives specific requirements (included in QC 750005 of the IECQ system), represents the blank detail
Semiconductor devices. Discrete devices. Part 3 : Signal (including switching) and regulator diodes. Section Two: Blank detail specification for voltage-regulator diodes and voltage-reference diodes, excluding temperature-compensated precision reference d
In t h e manufacture and a p p l i c a t i o n of diodes it is desirable t o s t a n d a r d i z e the nominal v a l u e s when s p e c i f y i n g breakdown v o l t a g e for v o l t a g e r e g u l a t o r d i o d e s , c a p a c i t a n c e f o r v a r i a b l e c a p a c i t o r d i o d e s , and peak p o i n t c u r r e n t for t u n n e l d i o d e s .
List of Preferred Values for Use on Various Types of Small Signal and Regulator Diodes
Electronic Components Case-rated rectifier diodes Manual of detail specifications within the scope of the French standards NF C 86-010 and NF C 86-819 (CECC 50 000 - CECC 50 009)
Electronic Components Case-rated rectifier diodes Manual of detail specifications within the scope of the French standards NF C 86-010 and NF C 86-819 (CECC 50 000 - CECC 50 009)
Electronic Components Voltage regulator diodes and voltage reference diodes Manual of detail specifications within the scope of the French standards NF C 86-010 and NF C 86-815 (CECC 50 000 and CECC 50 000)
Electronic Components Voltage regulator diodes and voltage reference diodes Manual of detail specifications within the scope of the French standards NF C 86-010 and NF C 86-815 (CECC 50 000 and CECC 50 000)
This specification covers technical grade lead dioxide.
LEAD DIOXIDE, TECHNICAL
This Standard defines reference distances for the external package. It specifically exchdes transistors, nonhermetic devices (leak rate > 1 x IO4 standard cubic centimeter/second) and assemblies of semiconductor devices such as thyristors and rectifier diodes.
Definition of External Clearance and Creepage Distances of Discrete Semiconductor Packages for Thyristors and Rectifier Diodes
Methods of measurement for regulated current of silicon current regulator diodes
General procedures of measurement for silicon current-regulator diodes
Methods of measurement for breakdown voltage of silicon currenet regulator diodes
Methods of measurement for current temperature coefficient of silicon current regulator diodes
Methods of measurement for limiting voltage of silicon current regulator diodes
Methods of measurement for dynamic impedance of silicon current regulator diodes
Temperature coefficient and voltage variation with temperature are parameters describing the voltage-temperature characteristics oí' regulator and reference diodes as referenced below
Mesurement of Temperature Coefficient of Voltage Regulator Diodes
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