L41 半导体二极管 标准查询与下载

BS IEC 60747-7:2010 半导体器件.分立器件.双极晶体管

Semiconductor devices. Discrete devices. Bipolar transistors

IEC 60747-7:2010 半导体器件.分立器件.第7部分:双极晶体管

This part of IEC 60747-7 gives the requirements applicable to the following sub-categories of bipolar transistors excluding microwave transistors. – Small signal transistors (excluding switching and microwave applications); – Linear power transistors (excluding switching, high-frequency, and microwave applications); – High-frequency power transistors for amplifier and oscillator applications; – Switching transistors for high speed switching and power switching applications; – Resistor biased transistors.

Semiconductor devices - Discrete devices - Part 7: Bipolar transistors

ASTM E1855-10 使用2N2222A硅双极晶体管作中子光谱传感器和位移损坏监控器的标准试验方法

The neutron spectrum in a test (simulation) environment must be known in order to use a measured device response in the test environment to predict the device performance in an operational environment (see Practice E1854). Typically, neutron spectra are determined by use of a set of sensors that have response functions that are sensitive over the neutron energy region to which the device under test (DUT) responds (see Guide E721). In particular, for silicon bipolar devices exposed in reactor neutron spectra, this effective energy range is between 0.01 and 10 MeV. A typical set of activation reactions that lack fission reactions from nuclides such as 235U, 237Np, or 239Pu, will have very poor sensitivity to the spectrum between 0.01 and 2 MeV. For a pool-type reactor spectrum, 70 % of the DUT electronic damage response may lie in this range. Often, fission foils are not included in the sensor set for spectrum determinations because their use must be licensed, and they require special handling for health physics considerations. The silicon transistors provide the needed response to define the spectrum in this critical range. If fission foils are a part of the sensor set, the silicon sensor provides confirmation of the spectrum shape. Bipolar transistors, such as type 2N2222A, are inexpensive, are smaller than fission foils contained in a boron ball, and are sensitive to a part of the neutron spectrum important to the damage of modern silicon electronics. They also can be used directly in arrays to map 1-MeV(Si) equivalent fluence. The proper set of steps to take in reading the transistor-gain degradation is the primary subject of this test method.1.1 This test method covers the use of 2N2222A silicon bipolar transistors as dosimetry sensors in the determination of neutron energy spectra, and as silicon 1-MeV(Si) equivalent displacement damage fluence monitors. 1.2 The neutron displacement damage is especially valuable as a neutron spectrum sensor in the range 0.1 to 2.0 MeV when fission foils are not available. It has been applied in the fluence range between 2 × 10 12 n/cm2 and 1 × 1014 n/cm2 and should be useful up to 1015 n/cm2. This test method details the steps for the acquisition and use of silicon 1-MeV equivalent fluence information (in a manner similar to the use of activation foil data) for the determination of neutron spectra. 1.3 In addition, this sensor can provide important confirmation of neutron spectra determined with other sensors, and yields a direct measurement of the silicon 1-MeV fluence by the transfer technique. 1.4 The values stated in SI units are to be regarded as standard. No other units of measurement are included in this standard. 1.5 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory requirements prior to use.

Standard Test Method for Use of 2N2222A Silicon Bipolar Transistors as Neutron Spectrum Sensors and Displacement Damage Monitors

IEEE Std C62.37/COR-2009 半导体闸流管二极管冲击保护设备试验规范;勘误表

Errata to IEEE Standard Test Specification for Thyristor Diode Surge Protective Devices

ASTM F76-08 测量单晶半导体的电阻率、霍尔系数及霍尔迁移率的试验方法

In order to choose the proper material for producing semiconductor devices, knowledge of material properties such as resistivity, Hall coefficient, and Hall mobility is useful. Under certain conditions, as outlined in the Appendix, other useful quantities for materials specification, including the charge carrier density and the drift mobility, can be inferred. 1.1 These test methods cover two procedures for measuring the resistivity and Hall coefficient of single-crystal semiconductor specimens. These test methods differ most substantially in their test specimen requirements. 1.1.1 Test Method A, van der Pauw (1) —This test method requires a singly connected test specimen (without any isolated holes), homogeneous in thickness, but of arbitrary shape. The contacts must be sufficiently small and located at the periphery of the specimen. The measurement is most easily interpreted for an isotropic semiconductor whose conduction is dominated by a single type of carrier. 1.1.2 Test Method B, Parallelepiped or Bridge-Type8212;This test method requires a specimen homogeneous in thickness and of specified shape. Contact requirements are specified for both the parallelepiped and bridge geometries. These test specimen geometries are desirable for anisotropic semiconductors for which the measured parameters depend on the direction of current flow. The test method is also most easily interpreted when conduction is dominated by a single type of carrier. 1.2 These test methods do not provide procedures for shaping, cleaning, or contacting specimens; however, a procedure for verifying contact quality is given. Note 18212;Practice F 418 covers the preparation of gallium arsenide phosphide specimens. 1.3 The method in Practice F 418 does not provide an interpretation of the results in terms of basic semiconductor properties (for example, majority and minority carrier mobilities and densities). Some general guidance, applicable to certain semiconductors and temperature ranges, is provided in the Appendix. For the most part, however, the interpretation is left to the user. 1.4 Interlaboratory tests of these test methods (Section 19) have been conducted only over a limited range of resistivities and for the semiconductors, germanium, silicon, and gallium arsenide. However, the method is applicable to other semiconductors provided suitable specimen preparation and contacting procedures are known. The resistivity range over which the method is applicable is limited by the test specimen geometry and instrumentation sensitivity. 1.5 The values stated in acceptable metric units are to be regarded as the standard. The values given in parentheses are for information only. (See also 3.1.4.) 1.6 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

Standard Test Methods for Measuring Resistivity and Hall Coefficient and Determining Hall Mobility in Single-Crystal Semiconductors

IEC 60747-4:2007 半导体装置.分立装置.第4部分:微波二极管和晶体管

This part of IEC 60747 gives requirements for the following categories of discrete devices: – variable capacitance diodes and snap-off diodes (for tuning, up-converter or harmonic multiplication, switching, limiting, phased shift, parametric amplification); – mixer diodes and detector diodes; – avalanche diodes (for direct harmonic generation, amplification); – gunn diodes (for direct harmonic generation); – bipolar transistors (for amplification, oscillation); – field-effect transistors (for amplification, oscillation).

Semiconductor devices - Discrete devices - Part 4: Microwave diodes and transistors

GJB 5905-2006 600A及以上快恢复二极管规范

本规范规定了额定电流600A及以上快恢复二极管的要求、质量保证规定和交货准备等。 本规范适用于600A至2000A的快恢复二极管的设计、生产和验收。

Specification for fast recovery diodes, 600A and above

KS C IEC 61643-321:2006 低压浪涌保护装置的元件.第321部分:雪崩击穿二极管(ABD)规范

이 규격은 저전압 전력 분배 장치, 송전 및 신호망과 연결된 서지 보호 장치의 설계와 구조

Components for low－voltage surge protective devices－Part 321：Specifications for avalanche breakdown diode(ABD)

DLA SMD-5962-00523 REV F-2006 单片硅辐射硬化线性微电路 2.5V并联二极管调节器

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.

MICROCIRCUIT, LINEAR, RADIATION HARDENED, 2.5 V SHUNT DIODE REGULATOR, MONOLITHIC SILICON

IEC 60747-7-5:2005 半导体器件.分立器件.第7-5部分:电源转换用双极晶体管

This part of IEC 60747 gives requirements for bipolar switching transistors used for power switching application above 1 A.NOTE Requirements concerning bipolar transistors in general can be found in IEC 60747-7.

Semiconductor devices - Discrete devices - Part 7-5: Bipolar transistors for power switching applications

JEDEC JEP133B-2005 辐射多芯片模块和混合微电路的生产指南

The development of radiation-hardened multichip modules and hybrid microcircuits can take place in one of three ways

Guide for the Production and Acquisition of Radiation-Hardness- Assured Multichip Modules and Hybrid Microcircuits

NAVY A-A-59781-2005 发光二极管应用为指示灯

This Commercial Item Description (CID) covers the performance of solid-state light emitting diodes (LEDs) for use as indicator lights. The LEDs will provide indicator illumination in lieu of conventional incandescent indicator lamps. The form, fit and function of the LED will be comparable to the legacy incandescent lamps when being applied in retrofit applications.

LIGHT EMITTING DIODES FOR USE AS INDICATOR LIGHTS

ASTM E1855-05e1 作为中子光谱传感器和位移损坏监测器的2N2222A硅双极晶体管的使用的标准试验方法

1.1 This test method covers the use of 2N2222A silicon bipolar transistors as dosimetry sensors in the determination of neutron energy spectra, and as silicon 1-MeV equivalent displacement damage fluence monitors.1.2 The neutron displacement damage is especially valuable as a spectrum sensor in the range 0.1 to 2.0 MeV when fission foils are not available. It has been applied in the fluence range between 2 X 1012 n/cm2 and 1 X 1014 n/cm2 and should be useful up to 1015 n/cm2. This test method details the steps for the acquisition and use of silicon 1-MeV equivalent fluence information (in a manner similar to the use of activation foil data) for the determination of neutron spectra.1.3 In addition, this sensor can provide important confirmation of neutron spectra determined with other sensors, and yields a direct measurement of the silicon 1-MeV fluence by the transfer technique.1.4 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory requirements prior to use.

Standard Test Method for Use of 2N2222A Silicon Bipolar Transistors as Neutron Spectrum Sensors and Displacement Damage Monitors

ASTM E1855-05 作为中子光谱传感器和位移损坏监测器的2N2222A硅双极晶体管的使用的标准试验方法

1.1 This test method covers the use of 2N2222A silicon bipolar transistors as dosimetry sensors in the determination of neutron energy spectra, and as silicon 1-MeV equivalent displacement damage fluence monitors.1.2 The neutron displacement damage is especially valuable as a spectrum sensor in the range 0.1 to 2.0 MeV when fission foils are not available. It has been applied in the fluence range between 2 10 12 n/cm2 and 1 1014 n/cm2 and should be useful up to 1015 n/cm2. This test method details the steps for the acquisition and use of silicon 1-MeV equivalent fluence information (in a manner similar to the use of activation foil data) for the determination of neutron spectra.1.3 In addition, this sensor can provide important confirmation of neutron spectra determined with other sensors, and yields a direct measurement of the silicon 1-MeV fluence by the transfer technique.1.4 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory requirements prior to use.

Standard Test Method for Use of 2N2222A Silicon Bipolar Transistors as Neutron Spectrum Sensors and Displacement Damage Monitors

JEDEC JESD24-12-2004 绝缘双极晶体管的热阻抗测量

The purpose of this test method is to measure the thermal impedance of the IGBT (Insulated Gate Bipolar Transistor) under the specified conditions of applied voltage, current and pulse duration. The temperature sensitivity of the collector-emitter on voltage, VCE(on), is used as the junction temperature indicator. This is an alternative method to JEDEC Standard No. 24-6.

Thermal Impedance Measurement for Insulated Gate Bipolar Transistors (Delta VCE(on) Method) (This is an alternative method to JEDEC Standard No. 24-6)

JEDEC JEP84A-2004 晶体管引线温度测量的推荐实践

It is often required to measure the lead temperature of a packaged transistor under various load conditions.

Recommend Practice for Measurement of Transistor Lead Temperature

ASTM E1855-04 作为中子光谱传感器和位移损坏监测器的2N2222A硅双极晶体管使用的标准试验方法

1.1 This test method covers the use of 2N2222A silicon bipolar transistors as dosimetry sensors in the determination of neutron energy spectra, and as silicon 1-MeV equivalent displacement damage fluence monitors.1.2 The neutron displacement damage is especially valuable as a spectrum sensor in the range 0.1 to 2.0 MeV when fission foils are not available. It has been applied in the fluence range between 2 10 12 n/cm2 and 1 1014 n/cm2 and should be useful up to 1015 n/cm2. This test method details the steps for the acquisition and use of silicon 1-MeV equivalent fluence information (in a manner similar to the use of activation foil data) for the determination of neutron spectra.1.3 In addition, this sensor can provide important confirmation of neutron spectra determined with other sensors, and yields a direct measurement of the silicon 1-MeV fluence by the transfer technique.1.4 his standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory requirements prior to use.

Standard Test Method for Use of 2N2222A Silicon Bipolar Transistors as Neutron Spectrum Sensors and Displacement Damage Monitors

ASTM E1855-04e1 作为中子光谱传感器和位移损坏监测器的2N2222A硅双极晶体管使用的标准试验方法

1.1 This test method covers the use of 2N2222A silicon bipolar transistors as dosimetry sensors in the determination of neutron energy spectra, and as silicon 1-MeV equivalent displacement damage fluence monitors.1.2 The neutron displacement damage is especially valuable as a spectrum sensor in the range 0.1 to 2.0 MeV when fission foils are not available. It has been applied in the fluence range between 2 215; 10 12 n/cm2 and 1 215; 1014 n/cm2 and should be useful up to 1015 n/cm2. This test method details the steps for the acquisition and use of silicon 1-MeV equivalent fluence information (in a manner similar to the use of activation foil data) for the determination of neutron spectra.1.3 In addition, this sensor can provide important confirmation of neutron spectra determined with other sensors, and yields a direct measurement of the silicon 1-MeV fluence by the transfer technique.1.4 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory requirements prior to use.

Standard Test Method for Use of 2N2222A Silicon Bipolar Transistors as Neutron Spectrum Sensors and Displacement Damage Monitors

SJ 50033/162-2003 半导体分立器件2CW1022型硅双向电压调整二极管详细规范

Semiconductor discrete device Detail specification of type 2CW1022 for silicon bidirectional voltage regulator diodes

SJ 50033/165-2003 半导体分立器件PIN0003型PIN二极管详细规范

Semiconductor discrete device Detail specification of type PIN0003 PIN diode