L85 电子测量与仪器综合 标准查询与下载

DIN VDE 0848-5:2001 电场、磁场和电磁场的安全.第5部分:防爆

Safety in electric, magnetic and electromagnetic fields - Part 5: Protection against explosion

DLA SMD-5962-87543 REV B-2001 硅单块 九输入奇偶校验器和发生器,双极数字微型电路

This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.

MICROCIRCUIT, DIGITAL, BIPOLAR, NINE-INPUT PARITY CHECKER/GENERATOR, MONOLITHIC SILICON

GJB 3947-2000 军用电子测试设备通用规范

本规范规定了军用电子测试设备包括系统、仪器和辅助件(以下简称设备)的要求、质量保证规定和交负准备等。这些设备可以是民用设计，包括通用的、专用的、自动测试设备(ATE)及校准设备，特殊的或台式安装的设备可参照执行。对特殊设备的详细要求应在设备的产品规范中规定。 本规范适用于各种类型设备，是产品或设备研制、设计、生产和验收的主要技术依据，也是制定设备产品规范和其它技术文件应遵循的原则和基础。 本规范的要求是根据设备使用的环境级别确定的，并可根据设备的配置及预定的用途进行剪裁。

General specification for military electronic test equipment

DLA SMD-5962-96708 REV C-2000 抗辐射互补金属氧化物半导体,9-BIT奇偶发生器,硅单片电路数字微电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

MICROCIRCUIT, DIGITAL, RADIATION HARDENED ADVANCED CMOS, 9-BIT ODD/EVEN PARITY GENERATOR CHECKER, MONOLITHIC SILICON

WJ 2563-2000 红箭-8导弹低电阻检测仪检定规程

Verification Regulations for Low-resistance Detector of Hongjian-8 Missile

WJ 2562-2000 红箭-8筒装导弹检测仪检定规程

Verification Regulations for Red Arrow-8 Tube Mounted Missile Detector

NAVY MIL-I-85627 NOTICE 2-1999 双架桥射频滤波发生器

MIL-1-85627, including Amendment 1, dated 2 October 1991, is inactive for new design and is no longer used, except for replacement purposes.

INITIATOR, RF FILTERED, DUAL-BRIDGEWIRE

DLA SMD-5962-96753 REV A-1999 双极的互补金属氧化物半导体,计时和等待状态发生器电路,晶体管兼容输入硅单片电路数字微电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, CLOCK AND WAIT-STATE GENERATION CIRCUIT, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON

DLA SMD-5962-89715 REV B-1998 硅单片,图象重采样序列发生器,氧化物半导体数字微型电路

This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.

MICROCIRCUIT, DIGITAL, CMOS, IMAGE RESAMPLING SEQUENCER, MONOLITHIC SILICON

NAVY MIL-G-3111 C NOTICE 1-1998 海军军舰用的直流发生器

MIL-G-3111C, including Amendment 1, dated 9 October 1969, is inactive for new design and is no longer used, except for replacement purposes.

GENERATOR, ELECTRIC, DIRECT-CURRENT NAVAL SHIPBOARD USE

NAVY MIL-G-24477 NOTICE 1-1998 内燃机引擎交流电(海军)显示180 55发生器装置

MIL-G-24477, dated 8 December 1972, is inactive for new designand is no longer used, except for replacement purposes.

GENERATOR SET, DIESEL ENGINE ALTERNATING CURRENT (NAVAL) SHOW 180 55

NAVY MIL-G-3124D NOTICE 1-1998 60赫兹交流电发生器(海军军舰用途)

MIL-G-3124D, dated 25 January 1990, is inactive for new design and is no longer used, except for replacement purposes.

GENERATOR, ALTERNATING CURRENT, 60-HERTZ (NAVAL SHIPBOARD USE)

NAVY MIL-G-24464 A NOTICE 1-1998 1750千瓦磁扫雷气体锅炉机发生器装置

MIL-G-24464A, dated 20 January 1978, is inactive for new designand is no longer used, except for replacement purposes.

GENERATOR SET, GAS TURBINE, MAGNETIC MINESWEEPING, 1750 KW

NAVY MIL-G-18473 B NOTICE 1-1998 海军军舰推动直流发生器发动机和附属装备

MIL-G-l8473B, dated 24 November 1978, is inactive for new design and is no longer used, except for replacement purposes.

GENERATOR, MOTOR, AND AUXILIARY EQUIPMENT, DIRECT CURRENT, NAVAL SHIP PROPULSION

IPC TM-650 5.5.4.18-1998 电容测试

To determine the ability of the connector to operate safely at its rated voltage and to withstand momentary overpotentials due to switching, surges, or other similar phenomena. The dielectric withstanding voltage test is also called high-potential, over-potential, or dielectric-strength test, but differs from a dielectric-breakdown test as described in paragraph 6.2.

Capacitance Test

IPC TM-650 5.5.4.19-1998 导体测试

To determine the effects of exposure to elevated ambient temperature on the electrical and mechanical characteristics of a connector.

Conductor Test

ITU-T SERIE G SUPP 38 SPANISH-1998 ITU-T推荐G.767数字电路倍增设备可变比特率的计算(DCME)

Variable bit rate calculations for ITU-T Recommendation G.767 Digital Circuit Multiplication Equipment (DCME)

ITU-T SERIE G SUPP 38 FRENCH-1998 ITU-T推荐G.767数字电路倍增设备可变比特率的计算(DCME)

Variable bit rate calculations for ITU-T Recommendation G.767 Digital Circuit Multiplication Equipment (DCME)

WJ 2506-1998 光电二极管动态测试仪检定规程

Verification Regulations for Photodiode Dynamic Tester

DLA SMD-5962-96599 REV B-1997 抗辐射互补金属氧化物半导体9-BIT发生器或监测器硅单片电路数字微电路

This appendix establishes minimum requirements for microcircuit die to be supplied under the Qualified anufacturers List (QML) Program. QML microcircuit die meeting the requirements of MIL-PRF-38535 and the manufacturers,proved QM plan for use in monolithic microcircuits, multichip modules (MCMs), hybrids, electronic modules, or devices using iip and wire designs in accordance with MIL-PRF-38534 are specified herein. Two product assurance classes consisting of ilitaty high reliability (device class Q) and space application (device Class V) are reflected in the Part or Identification Number 'IN). When available a choice of Radiation Hardiness Assurance (RHA) levels are reflected in the PIN.

MICROCIRCUIT, DIGITAL, RADIATION HARDENED, CMOS, 9 BIT PARITY GENERATOR/CHECKER, MONOLITHIC SILICON