DIN 50454-3-1994
半导体工艺材料的检验.Ⅲ-Ⅴ化合物半导体单晶错位腐蚀坑密度的测定.第3部分:镓磷化物
Testing of materials for semiconductor technology - Determination of the dislocation etch pits density in monocrystals of III-V-compound semiconductors - Part 3: Gallium phosphide
- 适用范围
- The document specifies a test method for determination of the dislocation etch pits densities
100000 cm<(hoch)-2> in monocrystals of gallium phosphide. The method is independent on the electrical resistivity and the conductivity type of the material.