DIN 50434-1986
半导体工艺材料的检验.对(111)和(100)表面采用蚀刻技术的单晶硅的晶体结构缺陷的测定

Testing of materials for semiconductor technology; detection of crystal defects in monocrystalline silicon using etching techniques on {111} and {100} surfaces

标准号

DIN 50434-1986

发布日期

1986年02月

实施日期

废止日期

无

中国标准分类号

H82

国际标准分类号

29.045

发布单位

DE-DIN

适用范围

This standard defines a method for the determination of the crystallographic perfection of mono-crystalline silicon by etch techniques on {111}- and {100}-surfaces. It is applicable to n-type or p-typed doped silicium with specific resistance down to 0,005cm and to dislocation densities within 100 and 100000 cm<(hoch)-2>.#,,#

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