DIN 50449-2-1998 半导体工艺材料试验.通过红外线吸收测定半导体中杂质含量.第2部分:砷化镓中的硼
Testing of materials for semiconductor technology - Determination of impurity content in semiconductors by infrared absorption - Part 2: Boron in gallium arsenide
The method specified in this document covers the determination of the boron content in gallium arsenide by infrared absorption. It is used for semiisolating single-crystal gallium arsenide with a resistivity greater than 10 cm<(hoch)>6.