ZH
RU
ES

Pseudocapacitive properties of metal oxides

Pseudocapacitive properties of metal oxides, Total:141 items.

In the international standard classification, Pseudocapacitive properties of metal oxides involves: Electrical accessories, Resistors, Physics. Chemistry, Valves, Integrated circuits. Microelectronics, Semiconductor devices, Electricity. Magnetism. Electrical and magnetic measurements, Non-ferrous metals, Radiocommunications.


American Society for Testing and Materials (ASTM), Pseudocapacitive properties of metal oxides

  • ASTM F1153-92(1997) Standard Test Method for Characterization of Metal-Oxide-Silicon (MOS) Structures by Capacitance-Voltage Measurements
  • ASTM F996-11 Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current-Voltage Characteristics
  • ASTM F996-98 Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current-Voltage Characteristics
  • ASTM F996-98(2003) Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current-Voltage Characteristics
  • ASTM F996-10 Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current-Voltage Characteristics

International Telecommunication Union (ITU), Pseudocapacitive properties of metal oxides

  • ITU-T K.77-2009 Characteristics of metal oxide varistors for the protection of telecommunication installations Study Group 5
  • ITU-T K.77 CORR 1-2011 Characteristics of metal oxide varistors for the protection of telecommunication installations Corrigendum 1
  • ITU-T K.77 AMD 1-2013 Characteristics of metal oxide varistors for the protection of telecommunication installations Amendment 1: New Appendix III – Characterizing thermally protected MOVs using a.c. step stress testing (Study Group 5)

NEMA - National Electrical Manufacturers Association, Pseudocapacitive properties of metal oxides

  • NEMA C78.387-1987 ELECTRIC LAMPS - METAL-HALIDE LAMPS - METHODS OF MEASURING CHARACTERISTICS

Korean Agency for Technology and Standards (KATS), Pseudocapacitive properties of metal oxides

  • KS C 4808-2011(2016) Polymer-housed metal-oxide surge arresters without gaps for distribution line
  • KS C ISO TS 18827:2021 Nanotechnologies — Electron spin resonance(ESR) as a method for measuring reactive oxygen species(ROS) generated by metal oxide nanomaterials

U.S. Military Regulations and Norms, Pseudocapacitive properties of metal oxides

Group Standards of the People's Republic of China, Pseudocapacitive properties of metal oxides

  • T/CECA 27-2017 General specification for metal oxide varistors with reliability specifications

British Standards Institution (BSI), Pseudocapacitive properties of metal oxides

  • BS PD IEC TS 62607-8-2:2021 Nanomanufacturing. Key control characteristics. Nano-enabled metal-oxide interfacial devices. Test method for the polarization properties by thermally stimulated depolarization current
  • PD ISO/TS 18827:2017 Nanotechnologies. Electron spin resonance (ESR) as a method for measuring reactive oxygen species (ROS) generated by metal oxide nanomaterials
  • PD IEC TS 62607-8-1:2020 Nanomanufacturing. Key control characteristics. Nano-enabled metal-oxide interfacial devices. Test method for defect states by thermally stimulated current
  • BS EN IEC 61643-331:2020 Components for low-voltage surge protection - Performance requirements and test methods for metal oxide varistors (MOV)
  • 18/30383392 DC BS EN 61643-331 Ed.3.0. Components for low-voltage surge protective devices. Part 331. Performance requirements and test methods for metal oxide varistors (MOV)

International Electrotechnical Commission (IEC), Pseudocapacitive properties of metal oxides

  • IEC TS 62607-8-2:2021 Nanomanufacturing - Key control characteristics - Part 8-2: Nano-enabled metal-oxide interfacial devices - Test method for the polarization properties by thermally stimulated depolarization current
  • IEC TS 62607-8-3:2023 Nanomanufacturing - Key control characteristics - Part 8-3: Nano-enabled metal-oxide interfacial devices - Analog resistance change and resistance fluctuation: Electrical resistance measurement
  • IEC TS 62607-8-1:2020 Nanomanufacturing - Key control characteristics - Part 8-1: Nano-enabled metal-oxide interfacial devices - Test method for defect states by thermally stimulated current
  • IEC 61643-331:2020 RLV Components for low-voltage surge protection - Part 331: Performance requirements and test methods for metal oxide varistors (MOV)

Defense Logistics Agency, Pseudocapacitive properties of metal oxides

  • DLA SMD-5962-91533 REV A-1994 MICROCIRCUITS, LINEAR, CMOS, HIGH PERFORMANCE DUAL SWITCHED CAPACITOR FILTER, MONOLITHIC SILICON
  • DLA SMD-5962-85133-1986 MICROCIRCUITS, DIGITAL HMOS 80-BIT NUMERIC PROCESSOR EXTENSION MONOLITHIC SILICON
  • DLA SMD-5962-87668 REV C-1991 MICROCIRCUITS, 32-BIT MICROPROCESSOR DIGITAL, CHMOS, MONOLITHIC SILICON
  • DLA SMD-5962-90744 REV B-2006 MICROCIRCUIT, DIGITAL, BIPOLAR CMOS, 10-BIT BUS/MOS MEMORY DRIVER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-97528-1997 MICROCIRCUIT, DIGITAL, ADVANCED HIGH SPEED CMOS, QUADRUPLE 2-INPUT POSITIVE-NOR GATE, MONOLITHIC SILICON
  • DLA SMD-5962-97571-1997 MICROCIRCUIT, DIGITAL, ADVANCED HIGH SPEED CMOS, QUADRUPLE 2-INPUT POSITIVE-NOR GATE, TTL COMPATIBLE, MONOLITHIC SILICON
  • DLA SMD-5962-97533 REV C-2003 MICROCIRCUIT, DIGITAL, LOW VOLTAGE CMOS, QUADRUPLE 2-INPUT POSITIVE NAND GATE, MONOLITHIC SILICON
  • DLA SMD-5962-97534 REV B-2001 MICROCIRCUIT, DIGITAL, LOW VOLTAGE CMOS, QUADRUPLE 2-INPUT POSITIVE-AND GATE, MONOLITHIC SILICON
  • DLA SMD-5962-88650 REV A-1996 MICROCIRCUIT, LINEAR, CMOS, 8-BIT, MICROPROCESSOR COMPATIBLE, A/D CONVERTER WITH TRACK/HOLD, MONOLITHIC SILICON
  • DLA SMD-5962-88765 REV B-2002 MICROCIRCUIT, LINEAR, CMOS, MICROPROCESSOR COMPATIBLE, DUAL 12-BIT DIGITAL-TO-ANALOG CONVERTERS, MONOLITHIC SILICON
  • DLA SMD-5962-96748 REV D-1999 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, 3.3-VOLT OCTAL BUS TRANSCEIVER AND REGISTER WITH BUS HOLD, THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-92155 REV A-2006 MICROCIRCUIT, MEMORY, DIGITAL, CMOS, REGISTERED 32K X 8-BIT PROM, MONOLITHIC SILICON
  • DLA SMD-5962-90985 REV B-2004 MICROCIRCUIT, DIGITAL, ADVANCED CMOS, 8-BIT MAGNITUDE COMPARATOR WITH ENABLE, MONOLITHIC SILICON
  • DLA SMD-5962-96543 REV E-2006 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, QUADRUPLE 2-INPUT NAND SCHMITT TRIGGER, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-03247 REV B-2005 MICROCIRCUIT, HYBRID, LINEAR, POWER MOSFET, DUAL CHANNEL, OPTOCOUPLER
  • DLA SMD-5962-95658 REV C-2000 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, TRIPLE THREE-INPUT NAND GATE, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-95659 REV C-2000 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, DUAL 4-INPUT NAND GATE, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-86077 REV C-2005 MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, 9-BIT ODD/EVEN PARITY GENERATOR/CHECKER, MONOLITHIC SILICON
  • DLA SMD-5962-86890 REV C-2006 MICROCIRCUIT, DIGITAL, HIGH SPEED CMOS, HEX SCHMITT TRIGGER, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-96780 REV B-2003 MICROCIRCUIT, DIGITAL, ADVANCED CMOS, 3.3-V 16-BIT BUS TRANSCEIVER WITH EQUIVALENT 22 OHM A-PORT OUTPUT RESISTORS, THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-96849 REV A-2000 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, 3.3- V 16-BIT REGISTERED TRANSCEIVER WITH BUS HOLD, THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-95739 REV B-2000 MICROCIRCUIT, DIGITAL, RADIATION HARDENED HIGH SPEED CMOS, QUAD 2-INPUT NAND SCHMITT TRIGGER, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-96529 REV B-2005 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, TRIPLE 3-INPUT NOR GATE, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-94754 REV E-2004 MICROCIRCUIT, MEMORY, DIGITAL, CMOS, ONE-TIME PROGRAMMABLE LOGIC ARRAY, (RAD HARD), MONOLITHIC SILICON
  • DLA SMD-5962-91606 REV A-2006 MICROCIRCUIT, DIGITAL, ADVANCED CMOS, 10-BIT D FLIP-FLOP WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-92018 REV A-2007 MICROCIRCUIT, DIGITAL, ADVANCED CMOS, 16-BIT BUS DRIVERS WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-92022 REV A-2004 MICROCIRCUIT, DIGITAL, ADVANCED CMOS, 16-BIT BUS DRIVER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-92023 REV A-2004 MICROCIRCUIT, DIGITAL, ADVANCED CMOS, 16-BIT BUS TRANSCEIVER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-96861 REV A-1997 MICROCIRCUIT, DIGITAL, ADVANCED HIGH SPEED CMOS, DUAL POSITIVE EDGE-TRIGGERED D-TYPE FLIP-FLOP WITH CLEAR AND PRESET, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-96577 REV A-2005 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, LOOK-AHEAD CARRY GENERATOR FOR COUNTERS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-90939 REV C-2006 MICROCIRCUIT, DIGITAL, BIPOLAR CMOS, OCTAL BUFFER AND LINE DRIVER/MOS DRIVER WITH INVERTED THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-95619 REV B-2002 MICROCIRCUIT, DIGITAL, ADVANCED CMOS, 16-BIT BUFFER/LINE DRIVER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-95620 REV D-2003 MICROCIRCUIT, DIGITAL, ADVANCED CMOS, 16-BIT TRANSCEIVER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-95661 REV C-2000 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, OCTAL TRANSPARENT LATCH WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-96581 REV B-2006 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, QUADRUPLE S-R LATCH, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-96585 REV A-2006 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, 4-BIT BINARY FULL ADDER WITH FAST CARRY, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-96761-1996 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, 1-LINE TO 8-LINE CLOCK DRIVER, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-96753 REV A-1999 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, CLOCK AND WAIT-STATE GENERATION CIRCUIT, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-96774 REV A-1999 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, 16-BIT BUS TRANSCEIVER WITH 25-OMEGA SERIES RESISTORS AND THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-92024 REV A-2004 MICROCIRCUIT, DIGITAL, ADVANCED CMOS, 16-BIT D-TYPE TRANSPARENT LATCH WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-90758 REV A-2006 MICROCIRCUIT, DIGITAL, HIGH SPEED CMOS, DUAL 2-BIT BISTABLE TRANSPARENT LATCH, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-91576 REV C-2006 MICROCIRCUIT, DIGITAL, 8-BIT CHMOS MICROCONTROLLER WITH 8K BYTES EPROM MEMORY, MONLITHIC SILICON
  • DLA SMD-5962-96542 REV F-2004 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, QUADRUPLE 2-INPUT NAND SCHMITT TRIGGER, MONOLITHIC SILICON
  • DLA SMD-5962-84190 REV E-2005 MICROCIRCUIT, DIGITAL, N-CHANNEL, MOS 8-BIT MICROCOMPUTER WITH 32 K-BIT UVEPROM, MONOLITHIC SILICON
  • DLA SMD-5962-95844 REV F-2003 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, 3.3-VOLT NONINVERTING OCTAL BUFFER/DRIVER WITH BUS HOLD, THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-96768 REV A-2003 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, QUADRUPLE BUS BUFFER GATE WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-96867 REV B-1997 MICROCIRCUIT, DIGITAL, ADVANCED HIGH SPEED CMOS OCTAL TRANSPARENT D-TYPE LATCH WITH 3-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-92025 REV A-2004 MICROCIRCUIT, DIGITAL, ADVANCED CMOS, 16-BIT D-TYPE EDGE-TRIGGERED FLIP-FLOP WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-90976-1992 MICROCIRCUIT, CHMOS SINGLE-CHIP, 8-BIT MICROCONTROLLER WITH 256 BYTES OF ON CHIP DATA RAM, MONOLITHIC SILICON
  • DLA SMD-5962-90831 REV A-2007 MICROCIRCUIT, MEMORY, DIGITAL, CMOS 8K X 8-BIT REGISTERED DIAGNOSTIC PROM, MONOLITHIC SILICON
  • DLA SMD-5962-90908 REV A-2003 MICROCIRCUIT, LINEAR, CMOS 8-BIT DAC WITH OUTPUT AMPLIFIER, MONOLITHIC SILICON
  • DLA SMD-5962-91697 REV D-2003 MICROCIRCUIT, DIGITAL, CHMOS SINGLE-CHIP, 8-BIT MICROCONTROLLER WITH 32K BYTES OF EPROM PROGRAM MEMORY, MONOLITHIC SILICON
  • DLA SMD-5962-95831 REV D-2007 MICROCIRCUIT, DIGITAL, ADVANCED BICMOS, 3.3 VOLT OCTAL TRANSPARENT D-TYPE LATCH WITH BUS HOLD, THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-95832 REV C-2003 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, 3.3- VOLT OCTAL EDGE-TRIGGERED D-TYPE FLIP FLOP WITH BUS HOLD, THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-91610 REV B-2007 MICROCIRCUIT, DIGITAL, ADVANCED CMOS, 9-BIT D FLIP-FLOP, POSITIVE EDGE TRIGGERED, WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-91611 REV A-2000 MICROCIRCUITS, DIGITAL, ADVANCED CMOS, 8-BIT D FLIP-FLOP, POSITIVE EDGE-TRIGGERED WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-85504 REV D-2005 MICROCIRCUIT, DIGITAL, HIGH SPEED CMOS, 3-TO-8 LINE DECODER WITH TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-86867 REV D-2003 MICROCIRCUIT, DIGITAL, HIGH SPEED CMOS, OCTAL TRANSPARENT LATCH WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-96557 REV C-2004 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, 8-BIT SERIAL-IN/PARALLEL-OUT SHIFT REGISTER, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-96561 REV B-2001 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, 4-BIT UP/DOWN BINARY SYNCHRONOUS COUNTER, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-96583 REV B-2006 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, 9-BIT ODD/EVEN PARITY GENERATOR/CHECKER, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-96718 REV C-2000 MICROCIRCUIT, DIGITAL, RADIATION HARDENED ADVANCED CMOS, NONINVERTING OCTAL BUFFER/LINE DRIVER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-96719 REV E-2005 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, NONINVERTING OCTAL BIDIRECTIONAL BUS TRANSCEIVER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-96746 REV A-2003 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, 8-BIT TO 9-BIT PARITY BUS TRANSCEIVER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-96747-1997 MICROCIRCUIT, DIGITAL, ADVANCED CMOS, SCAN PATH SELECTOR WITH 8-BIT BIDIRECTIONAL DATA BUS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-95813 REV F-2008 MICROCIRCUIT, LINEAR RADIATION HARDENED CMOS, DUAL SPDT ANALOG SWITCHES, MONOLITHIC SILICON
  • DLA SMD-5962-91723 REV B-2003 MICROCIRCUIT, DIGITAL, ADVANCED CMOS, 4-BIT PRESETTABLE BINARY COUNTER, SYNCHRONOUS RESET, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-91609 REV B-2007 MICROCIRCUIT, DIGITAL, ADVANCED CMOS, 8-BIT DIAGNOSTIC REGISTER WITH THREESTATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-90848 REV A-2006 MICROCIRCUIT, DIGITAL, HIGH SPEED CMOS, PRESETTABLE SYNCHRONOUS 4-BIT BINARY UP/DOWN COUNTER, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-95662 REV B-1998 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, OCTAL D FLIP-FLOP WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-95663 REV C-2000 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, HIGH SPEED CMOS, 8-BIT SERIAL-IN/PARALLEL-OUT SHIFT REGISTER, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-90747 REV B-1995 MICROCIRCUIT, DIGITAL, BIPOLAR CMOS, TTL COMPATIBLE, OCTAL D-TYPE EDGE TRIGGERED FLIP-FLOP, MONOLITHIC SILICON
  • DLA SMD-5962-96555 REV B-2001 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, SYNCHRONOUS PRESETTABLE 4-BIT BINARY COUNTER, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-96586 REV A-2006 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, NONINVERTING HEX BUFFER/LINE DRIVER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-96587 REV A-2006 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, NONINVERTING HEX BUFFER/LINE DRIVER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-96714 REV C-2000 MICROCIRCUIT, DIGITAL, RADIATION HARDENED ADVANCED CMOS, DUAL J-K FLIP FLOP WITH SET AND RESET, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-96769 REV A-1998 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, 10-BIT BUS-INTERFACE D-TYPE LATCH WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-95742 REV C-1999 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, HIGH SPEED CMOS, BCD DECADE SYNCHRONOUS COUNTER, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-95743 REV A-1998 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, HIGH SPEED CMOS, SYNCHRONOUS PRESETTABLE 4-BIT BINARY COUNTER, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-91722 REV D-2004 MICROCIRCUIT, DIGITAL, ADVANCED CMOS, 4-BIT PRESETTABLE BINARY COUNTER, ASYNCHRONOUS RESET, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-95614 REV A-2008 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, SCAN TEST DEVICE WITH 18-BIT BUS TRANSCEIVER, THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-94672 REV A-2007 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, SCAN TEST DEVICE WITH 18-BIT UNIVERSAL BUS TRANSCEIVER, THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-95758 REV B-2000 MICROCIRCUIT, DIGITAL, RADIATION HARDENED HIGH SPEED CMOS, OCTAL POSITIVE EDGE-TRIGGERED D-TYPE FLIP-FLOP WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-94671 REV A-2007 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, 18-BIT UNIVERSAL BUS TRANSCEIVER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-96810 REV B-1998 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, 3.3-VOLT 16-BIT TRANSPARENT D-TYPE LATCH WITH BUS HOLD, THREE-STATE OUTPUTS, AND TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-87663 REV F-2007 MICROCIRCUIT, DIGITAL, ADVANCED CMOS, OCTAL TRANSCEIVER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-92148 REV D-1999 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, OCTAL TRANSCEIVER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-92157 REV A-1996 MICROCIRCUIT, DIGITAL, FAST CMOS, BUFFER/CLOCK DRIVER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-96547 REV C-2007 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, DUAL 2-LINE TO 4-LINE DECODER/DEMULTIPLEXER, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-95756 REV B-2000 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, HIGH SPEED CMOS, PRESETTABLE SYNCHRONOUS 4-BIT BINARY UP/DOWN COUNTER, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-95769 REV C-1999 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, HIGH SPEED CMOS, DUAL J-K FLIP-FLOP WITH SET AND RESET, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-95771 REV A-1998 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, HIGH SPEED CMOS, SYNCHRONOUS BCD DECADE UP/DOWN COUNTER, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-96563 REV A-2001 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, SYNCHRONOUS 4-BIT UP/DOWN BCD DECADE COUNTER, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-96565 REV A-2001 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, SYNCHRONOUS 4-BIT UP/DOWN BINARY COUNTER, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-95748 REV C-1999 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, HIGH SPEED CMOS, OCTAL D-TYPE POSITIVE EDGE-TRIGGERED FLIP-FLOP WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-94673 REV A-2007 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, OCTAL BUFFER/DRIVER WITH 25 OMEGA SERIES RESISTOR AND NONINVERTING THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-94697 REV C-1998 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, OCTAL BUFFER/LINE DRIVER WITH 25 OHM SERIES RESISTOR AND INVERTING THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-94698-1996 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, SCAN TEST DEVICE WITH 18-BIT TRANSCEIVER AND REGISTER, THREE-STATE OUTPUTS AND TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-90870 REV A-2006 MICROCIRCUIT, DIGITAL, BIPOLAR CMOS, OCTAL REGISTERED TRANSCEIVER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON

General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China, Pseudocapacitive properties of metal oxides

  • GB/T 41917-2022 Nanotechnologies—Electron spin resonance (ESR) as a method for measuring reactive oxygen species (ROS) generated by metal oxide nanomaterials
  • GB/T 12690.16-2010 Chemical analysis methods of non-rare earth impurities in rare earth metals and the oxides—Part 16:Determination of fluorine content—Ion selective electrode analysis

PH-BPS, Pseudocapacitive properties of metal oxides

  • PNS ISO/TS 18827:2021 Nanotechnologies - Electron spin resonance (ESR) as a method for measuring reactive oxygen species (ROS) generated by metal oxide nanomaterials

Institute of Electrical and Electronics Engineers (IEEE), Pseudocapacitive properties of metal oxides

  • IEEE Std C62.33-2016 IEEE Standard for Test Methods and Performance Values for Metal-Oxide Varistor Surge Protective Components
  • IEEE PC62.33/D6, September 2016 IEEE Approved Draft Standard for Test Methods and Performance Values of Metal-Oxide Varistor Surge Protective Components

International Organization for Standardization (ISO), Pseudocapacitive properties of metal oxides

  • ISO/TS 18827:2017 Nanotechnologies - Electron spin resonance (ESR) as a method for measuring reactive oxygen species (ROS) generated by metal oxide nanomaterials

KR-KS, Pseudocapacitive properties of metal oxides

  • KS C ISO TS 18827-2021 Nanotechnologies — Electron spin resonance(ESR) as a method for measuring reactive oxygen species(ROS) generated by metal oxide nanomaterials

Association Francaise de Normalisation, Pseudocapacitive properties of metal oxides

  • NF EN IEC 61643-331:2020 Composants pour parafoudres basse tension - Partie 331 : exigences de performance et méthodes d'essai pour les varistances à oxyde métallique (MOV)
  • NF C61-743-331*NF EN IEC 61643-331:2018 Components for low-voltage surge protective devices - Part 331 : performance requirements and test methods for metal oxide varistors (MOV)

European Committee for Electrotechnical Standardization（CENELEC）, Pseudocapacitive properties of metal oxides

  • EN IEC 61643-331:2018 Components for low-voltage surge protective devices - Part 331: Performance requirements and test methods for metal oxide varistors (MOV)

ES-UNE, Pseudocapacitive properties of metal oxides

  • UNE-EN IEC 61643-331:2020 Components for low-voltage surge protection - Part 331: Performance requirements and test methods for metal oxide varistors (MOV) (Endorsed by Asociación Española de Normalización in June of 2020.)

未注明发布机构, Pseudocapacitive properties of metal oxides

  • BS EN IEC 61643-331:2018 Components for low - voltage surge protective devices Part 331 : Performance requirements and test methods for metal oxide varistors (MOV)

IEC - International Electrotechnical Commission, Pseudocapacitive properties of metal oxides

  • IEC 61643-331:2017 Components for low-voltage surge protective devices – Part 331: Performance requirements and test methods for metal oxide varistors (MOV) (Edition 2.0)

  Metal oxide based pseudocapacitors, Pseudocapacitive properties of metal oxides, Pseudocapacitance of metal oxides.

 



Copyright ©2007-2023 ANTPEDIA, All Rights Reserved