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polar crystal

polar crystal, Total:18 items.

In the international standard classification, polar crystal involves: Semiconductor devices.

CU-NC, polar crystal

• NC 66-29-1984 Electronics. Bipolar Transistors Measurement Methods
• NC 66-27-1984 Electronics High-Frequency Bipolar Transistors, Type BF 310 Quality Specifications
• NC 66-28-1984 Electronics. High-Frequency Bipolar Transistors. Type BF 199. Quality Specifications
• NC 66-25-1987 Electronic and Electrotechnical Industry. High Frequency Bipolar Transistors. Quality Specifications
• NC 66-23-1984 Electronics. High-Power and Low-Frequency Bipolar Transistors, Type 2N 3055. Quality Specifications
• NC 66-17-1987 Electrotechnical and Electronic Industry. High Voltage and Medium Power Bipolar Transistors. Quality Specifications
• NC 66-14-1987 Electronic and Electrotechnical Industry. Plastic-Encapsulated Bipolar Transistors. General Quality Specifications
• NC 66-16-1987 Electronic and Electrotechnical Industry Low Noise and Power Bipolar Transistors. Quality Specifications
• NC 66-18-1984 Electronics. Medium-Power and High-Voltage Bipolar Transistors Types BC 328 and BC 338. Quality Specifications
• NC 66-20-1984 Electronios. High-Power and Low-Frequency Bipolar Tranaistors, Types BD 175, BD 176, BD 177 and BD 178. Quaiity Specifications
• NC 66-22-1984 Electronios. High-Power and Low-Frequency Bipolar Tranaistors, Types BD 705, BD 707, BD 708, BD 709, y BD 710 Quality Specifications
• NC 66-19-1984 Electronics. Medium-Power and High-Voliage Bipolar Transistors, Types BD 135, BD 136, 3D 137, BD 138, BD 139, and BD 140. Quality Specifications
• NC 66-24-1984 Electronics. High-Power and Low-Frequency Bipolar Transistors, Types BD 533, BD 534, BD 535, BD 536, BD 537 BD 538. Quality Specifications
• NC 66-21-1984 Electronios. High-Power and Low-Frequency Bipolar Tranaistors, Types BD 233, BD 234, BD 235, BD 236, BD 237 y BD 238. Quality Specifications

Danish Standards Foundation, polar crystal

• DS/IEC 747-7-2:1990 Semiconductor devices. Discrete devices. Part 7: Bipolar transistors. Section two: Blank detail specification for case-rated bipolar transistors for low-frequency amplification
• DS/IEC 747-7-1:1990 Semiconductor devices. Discrete devices. Part 7: Bipolar transistors. Section one: Blank detail specification for ambient-rated bipolar transistors for low and high-frequenc amplification

Korean Agency for Technology and Standards (KATS), polar crystal

• KS C IEC 60747-7-2:2006 Semiconductor devices－Discrete devices－Part 7：Bipolar transistors－Section Two：Blank detail specification for case-rated bipolar transistors for low-frequency amplification

US-CFR-file, polar crystal

• CFR 40-450.21-2014 Protection of Environment. Part450:Construction and development point source category. Section450.21:Effluent limitations reflecting the best practicable technology currently available (BPT).

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