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secondary ion mass spectrometry

secondary ion mass spectrometry, Total:72 items.

In the international standard classification, secondary ion mass spectrometry involves: Analytical chemistry, Testing of metals, Semiconducting materials, Semiconductor devices.

国家市场监督管理总局、中国国家标准化管理委员会, secondary ion mass spectrometry

GB/T 40129-2021 Surface chemical analysis—Secondary ion mass spectrometry—Calibration of the mass scale for a time-of-flight secondary ion mass spectrometer
GB/T 39144-2020 Test method for magnesium content in gallium nitride materials—Secondary ion mass spectrometry
GB/T 40109-2021 Surface chemical analysis—Secondary-ion mass spectrometry—Method for depth profiling of boron in silicon
GB/T 41153-2021 Determination of boron, aluminum and nitrogen impurity content in silicon carbide single crystal—Secondary ion mass spectrometry

British Standards Institution (BSI), secondary ion mass spectrometry

BS ISO 13084:2011 Surface chemical analysis. Secondary-ion mass spectrometry. Calibration of the mass scale for a time-of-flight secondary-ion mass spectrometer
BS ISO 20411:2018 Surface chemical analysis. Secondary ion mass spectrometry. Correction method for saturated intensity in single ion counting dynamic secondary ion mass spectrometry
BS ISO 13084:2018 Tracked Changes. Surface chemical analysis. Secondary ion mass spectrometry. Calibration of the mass scale for a time-of-flight secondary ion mass spectrometer
BS ISO 22048:2004 Surface chemical analysis. Information format for static secondary-ion mass spectrometry
BS ISO 12406:2010 Surface chemical analysis. Secondary-ion mass spectrometry. Method for depth profiling of arsenic in silicon
BS ISO 14237:2010 Surface chemical analysis - Secondary-ion mass spectrometry - Determination of boron atomic concentration in silicon using uniformly doped materials
20/30409889 DC BS ISO 18114. Surface chemical analysis. Secondary-ion mass spectrometry. Determination of relative sensitivity factors from ion-implanted reference materials
BS ISO 18114:2021 Tracked Changes. Surface chemical analysis. Secondary-ion mass spectrometry. Determination of relative sensitivity factors from ion-implanted reference materials
BS ISO 17862:2022 Surface chemical analysis. Secondary ion mass spectrometry. Linearity of intensity scale in single ion counting time-of-flight mass analysers
20/30409963 DC BS ISO 17862. Surface chemical analysis. Secondary ion mass spectrometry. Linearity of intensity scale in single ion counting time-of-flight mass analysers
BS ISO 22415:2019 Surface chemical analysis. Secondary ion mass spectrometry. Method for determining yield volume in argon cluster sputter depth profiling of organic materials

International Organization for Standardization (ISO), secondary ion mass spectrometry

ISO 13084:2018 Surface chemical analysis — Secondary ion mass spectrometry — Calibration of the mass scale for a time-of-flight secondary ion mass spectrometer
ISO 13084:2011 Surface chemical analysis - Secondary-ion mass spectrometry - Calibration of the mass scale for a time-of-flight secondary-ion mass spectrometer
ISO 22048:2004 Surface chemical analysis — Information format for static secondary-ion mass spectrometry
ISO 12406:2010 Surface chemical analysis - Secondary-ion mass spectrometry - Method for depth profiling of arsenic in silicon
ISO 17560:2014 Surface chemical analysis — Secondary-ion mass spectrometry — Method for depth profiling of boron in silicon
ISO/TS 22933:2022 Surface chemical analysis — Secondary ion mass spectrometry — Method for the measurement of mass resolution in SIMS
ISO 14237:2010 Surface chemical analysis - Secondary-ion mass spectrometry - Determination of boron atomic concentration in silicon using uniformly doped materials
ISO 14237:2000 Surface chemical analysis - Secondary-ion mass spectrometry - Determination of boron atomic concentration in silicon using uniformly doped materials
ISO 20411:2018 Surface chemical analysis - Secondary ion mass spectrometry - Correction method for saturated intensity in single ion counting dynamic secondary ion mass spectrometry
ISO 178:1975 Surface chemical analysis — Secondary ion mass spectrometry — Linearity of intensity scale in single ion counting time-of-flight mass analysers
ISO 17862:2013 Surface chemical analysis — Secondary ion mass spectrometry — Linearity of intensity scale in single ion counting time-of-flight mass analysers
ISO 178:2019 Surface chemical analysis — Secondary ion mass spectrometry — Linearity of intensity scale in single ion counting time-of-flight mass analysers
ISO 17862:2022 Surface chemical analysis — Secondary ion mass spectrometry — Linearity of intensity scale in single ion counting time-of-flight mass analysers
ISO 22415:2019 Surface chemical analysis — Secondary ion mass spectrometry — Method for determining yield volume in argon cluster sputter depth profiling of organic materials

Japanese Industrial Standards Committee (JISC), secondary ion mass spectrometry

JIS K 0153:2015 Surface chemical analysis -- Secondary-ion mass spectrometry -- Repeatability and constancy of the relative-intensity scale in static secondary-ion mass spectrometry
JIS K 0157:2021 Surface chemical analysis -- Secondary ion mass spectrometry -- Calibration of the mass scale for a time-of-flight secondary ion mass spectrometer
JIS K 0158:2021 Surface chemical analysis -- Secondary ion mass spectrometry -- Correction method for saturated intensity in single ion counting dynamic secondary ion mass spectrometry
JIS K 0168:2011 Surface chemical analysis -- Information format for static secondary-ion mass spectrometry
JIS K 0164:2023 Surface chemical analysis -- Secondary-ion mass spectrometry -- Method for depth profiling of boron in silicon
JIS K 0143:2023 Surface chemical analysis -- Secondary-ion mass spectrometry -- Determination of boron atomic concentration in silicon using uniformly doped materials
JIS K 0156:2018 Surface chemical analysis -- Secondary-ion mass spectrometry -- Method for depth calibration for silicon using multiple delta-layer reference materials
JIS K 0155:2018 Surface chemical analysis -- Secondary ion mass spectrometry -- Linearity of intensity scale in single ion counting time-flight mass analysers
JIS K 0169:2012 Surface chemical analysis -- Secondary-ion mass spectrometry (SIMS) -- Method for estimating depth resolution parameters with multiple delta-layer reference materials

Association Francaise de Normalisation, secondary ion mass spectrometry

NF ISO 23830:2009 Analyse chimique des surfaces - Spectrométrie de masse des ions secondaires - Répétabilité et constance de l'échelle des intensités relatives en spectrométrie statique de masse des ions secondaires
NF X21-070*NF ISO 14237:2010 Surface chemical analysis - Secondary-ion mass spectrometry - Determination of boron atomic concentration in silicon using uniformly doped materials.
NF ISO 17560:2006 Analyse chimique des surfaces - Spectrométrie de masse des ions secondaires - Dosage du bore dans le silicium par profilage d'épaisseur
NF ISO 14237:2010 Analyse chimique des surfaces - Spectrométrie de masse des ions secondaires - Dosage des atomes de bore dans le silicium à l'aide de matériaux dopés uniformément
NF ISO 23812:2009 Analyse chimique des surfaces - Spectrométrie de masse des ions secondaires - Méthode pour l'étalonnage de la profondeur pour le silicium à l'aide de matériaux de référence à couches delta multiples

General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China, secondary ion mass spectrometry

GB/T 42263-2022 Determination of nitrogen content in silicon single crystal—Secondary ion mass spectrometry method
GB/T 32495-2016 Surface chemical analysis.Secondary-ion mass spectrometry.Method for depth profiling of arsenic in silicon
GB/T 24580-2009 Test method for measuring Boron contamination in heavily doped n-type silicon substrates by secondary ion mass spectrometry
GB/T 24575-2009 Test method for measuring surface sodium, aluminum, potassium, and iron on silicon and epi substrates by secondary ion mass spectrometry
GB/T 32281-2015 Test method for measuring oxygen, carbon, boron and phosphorus in solar silicon wafers and feedstock.Secondary ion mass spectrometry
GB/T 25186-2010 Surface chemical analysis.Secondary-ion mass spectrometry.Determination of relative sensitivity factors from ion-implanted reference materials
GB/T 42274-2022 Determination of the content and distribution of trace elements (magnesium, gallium) in aluminum nitride materials—Secondary ion mass spectrometry
GB/T 29851-2013 Test method for measuring boron and aluminium in silicon materials used for photovoltaic applications by secondary ion mass spectrometry
GB/T 20176-2006 Surface chemical analysis.Secondary-ion mass spectrometry.Determination of boron atomic concentration in silicon using uniformly doped materials
GB/T 29852-2013 Test method for measuring phosphorus, arsenic and antimony in silicon materials used for photovoltaic applications by secondary ion mass spectrometry
GB/T 22572-2008 A Method for Estimating Depth-Resolved Parameters Using Multi-delta Layered Reference Materials for Secondary Ion Mass Spectrometry in Surface Chemistry

Professional Standard - Electron, secondary ion mass spectrometry

SJ/T 11493-2015 Test method for measuring nitrogen concentration in silicon substrates by secondary ion mass spectrometry
SJ/T 11498-2015 Test method for measuring oxygen contamination in heavily doped silicon substrates by secondary ion mass spectrometry

American Society for Testing and Materials (ASTM), secondary ion mass spectrometry

ASTM E1162-87(2001) Standard Practice for Reporting Sputter Depth Profile Data in Secondary Ion Mass Spectrometry (SIMS)
ASTM E1162-87(1996) Standard Practice for Reporting Sputter Depth Profile Data in Secondary Ion Mass Spectrometry (SIMS)
ASTM E1504-11(2019) Standard Practice for Reporting Mass Spectral Data in Secondary Ion Mass Spectrometry (SIMS)
ASTM E1635-95(2000) Standard Practice for Reporting Imaging Data in Secondary Ion Mass Spectrometry (SIMS)
ASTM E1635-06(2019) Standard Practice for Reporting Imaging Data in Secondary Ion Mass Spectrometry (SIMS)
ASTM E2695-09 Standard Guide for Interpretation of Mass Spectral Data Acquired with Time-of-Flight Secondary Ion Mass Spectroscopy
ASTM E1162-11(2019) Standard Practice for Reporting Sputter Depth Profile Data in Secondary Ion Mass Spectrometry (SIMS)

Korean Agency for Technology and Standards (KATS), secondary ion mass spectrometry

KS D ISO 22048-2005(2020) Surface chemical analysis - Information format for static secondary-ion mass spectrometry
KS D ISO 18114-2005(2020) Surface chemical analysis－Secondary-ion mass spectrometry－Determination of relative sensitivity factors from ion-implanted reference materials
KS D ISO 20341-2005(2020) Surface chemical analysis－Secondary-ion mass spectrometry－Method for estimating depth resolution parameters with multiple delta-layer reference materials

未注明发布机构, secondary ion mass spectrometry

BS ISO 22048:2004(2005) Surface chemical analysis — Information format for static secondary - ion mass spectrometry
BS ISO 20341:2003(2010) Surface chemical analysis — Secondary - ion mass spectrometry — Method for estimating depth resolution parameters with multiple delta - layer reference materials

KR-KS, secondary ion mass spectrometry

Group Standards of the People's Republic of China, secondary ion mass spectrometry

T/CASAS 010-2019 Determination of Trace Impurities Concentration and Distribution in GaN Materials by Secondary Ion Mass Spectrometry
T/CASAS 009-2019 Determination of Trace Impurities Concentration and Distribution in Semi-insulating SiC Materials by Secondary Ion Mass Spectrometry