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Secondary ion mass spectrometry method

Secondary ion mass spectrometry method, Total:13 items.

In the international standard classification, Secondary ion mass spectrometry method involves: Semiconducting materials, Semiconductor devices, Analytical chemistry.

Professional Standard - Electron, Secondary ion mass spectrometry method

• SJ/T 11493-2015 Test method for measuring nitrogen concentration in silicon substrates by secondary ion mass spectrometry
• SJ/T 11498-2015 Test method for measuring oxygen contamination in heavily doped silicon substrates by secondary ion mass spectrometry

General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China, Secondary ion mass spectrometry method

• GB/T 24580-2009 Test method for measuring Boron contamination in heavily doped n-type silicon substrates by secondary ion mass spectrometry
• GB/T 24575-2009 Test method for measuring surface sodium, aluminum, potassium, and iron on silicon and epi substrates by secondary ion mass spectrometry
• GB/T 29851-2013 Test method for measuring boron and aluminium in silicon materials used for photovoltaic applications by secondary ion mass spectrometry
• GB/T 29852-2013 Test method for measuring phosphorus, arsenic and antimony in silicon materials used for photovoltaic applications by secondary ion mass spectrometry
• GB/T 32495-2016 Surface chemical analysis.Secondary-ion mass spectrometry.Method for depth profiling of arsenic in silicon

Group Standards of the People's Republic of China, Secondary ion mass spectrometry method

• T/CASAS 010-2019 Determination of Trace Impurities Concentration and Distribution in GaN Materials by Secondary Ion Mass Spectrometry
• T/CASAS 009-2019 Determination of Trace Impurities Concentration and Distribution in Semi-insulating SiC Materials by Secondary Ion Mass Spectrometry

Japanese Industrial Standards Committee (JISC), Secondary ion mass spectrometry method

• JIS K 0158:2021 Surface chemical analysis -- Secondary ion mass spectrometry -- Correction method for saturated intensity in single ion counting dynamic secondary ion mass spectrometry
• JIS K 0164:2023 Surface chemical analysis -- Secondary-ion mass spectrometry -- Method for depth profiling of boron in silicon

British Standards Institution (BSI), Secondary ion mass spectrometry method

• BS ISO 20411:2018 Surface chemical analysis. Secondary ion mass spectrometry. Correction method for saturated intensity in single ion counting dynamic secondary ion mass spectrometry

国家市场监督管理总局、中国国家标准化管理委员会, Secondary ion mass spectrometry method

• GB/T 40109-2021 Surface chemical analysis—Secondary-ion mass spectrometry—Method for depth profiling of boron in silicon

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