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gjb 33

gjb 33, Total:51 items.

In the international standard classification, gjb 33 involves: .

Military Standard of the People's Republic of China-General Armament Department, gjb 33

• GJB 33/21-2011 Semiconductor optoelectronic device.Detail specification for GD310A series photocopier
• GJB 33/15-2011 Semiconductor optoelectronic device.Detail specification for type BT401 semiconductor infrared-emitting diode
• GJB 33/16-2011 Semiconductor optoelectronic device.Detail specification for type 3DU32 semiconductor phototransistor
• GJB 33/20-2011 Semiconductor optoelectronic device.Detail specification for type GH302 photocoupler
• GJB 33/22-2011 Semiconductor optoelectronic device.Detail specification for type GO103 photocoupler
• GJB 33/23-2011 Semiconductor optoelectronic device.Detail specification for type GH3201Z-4 photocoupler
• GJB 33/19-2011 Semiconductor optoelectronic device.Detail specification for type GH302-4 photocoupler
• GJB 33/17-2011 Semiconductor optoelectronic device.Detail specification for type GO11 semiconductor photocoupler
• GJB 33/18-2011 Semiconductor optoelectronic device.Detail specification for type GO417 bidirectional analog switch semiconductor photocoupler
• GJB 33/14A-2021 Semiconductor discrete device 3DG44 type silicon ultra-high frequency low noise transistor detailed specification
• GJB 33/009-1989 Blank detailed specification for semiconductor discrete device thyristors
• GJB 33/6-1988 Detailed specifications for semiconductor discrete devices GP, GT and GCT grade 3CG2605 type PNP silicon low power transistors
• GJB 33/9-1989 Detailed specifications for semiconductor discrete devices BT32 type PN silicon single-junction transistor
• GJB 33/4A-2021 Detailed specifications for semiconductor discrete devices QL12300A, QL12300D and QL12300H type silicon single-phase bridge rectifiers
• GJB 33/3-1987 Detailed Specification for Semiconductor Discrete Devices Detailed Specification for GP, GT and GCT Grade 3DD3442 Type NPN Silicon Power Transistors
• GJB 33/12A-2021 Semiconductor discrete device 2CK36 type silicon high current switching diode detailed specifications
• GJB 33/005-1989 Blank detailed specification for semiconductor discrete device switching diodes
• GJB 33/11-1989 Detailed specifications for semiconductor discrete devices BT37 type PN silicon single-junction transistor
• GJB 33/1A-2021 Semiconductor discrete device 3DD3716 type NPN silicon power transistor detailed specification
• GJB 33/13A-2021 Semiconductor discrete device 2CK37 type silicon high current switching diode detailed specifications
• GJB 33/008-1989 Blank detailed specification for low power switching transistors for semiconductor discrete devices
• GJB 33/4-1987 Detailed specifications for semiconductor discrete devices Detailed specifications for GP, GT grade QL12300A, QL12300D and 13300H type silicon single-phase bridge rectifiers
• GJB 33/7A-2021 Detailed specifications for semiconductor discrete devices 3CK2904, 3CK2905, 3CK2906 and 3CK2907 type PNP silicon low power switching transistors
• GJB 33/24-2021 Detailed Specification for CS0406-10 Silicon Field Effect Microwave Pulse Power Transistor
• GJB 33/004-1989 Blank detailed specification for semiconductor discrete device power switching transistors
• GJB 33/2-1987 Detailed Specification for Semiconductor Discrete Devices Detailed Specification for GP, GT and GCT Grade 3DD3767 Type NPN Silicon Power Transistors
• GJB 33/25-2021 Detailed Specification for CS0406-350 Silicon Field Effect Microwave Pulse Power Transistor
• GJB 33/5A-2021 Detailed specifications for semiconductor discrete devices 2CL59K, 2CL60K, 2CL80K, and 2CL150K silicon high-voltage rectifier stacks
• GJB 33/006-1989 Blank detailed specification for voltage regulation and voltage reference diodes for semiconductor discrete devices
• GJB 33/007-1989 Blank detailed specification for rectifier diodes for semiconductor discrete devices
• GJB 33/8A-2021 Semiconductor discrete device 3DK2369A type NPN silicon low power switching transistor detailed specification
• GJB 33/2A-2021 Semiconductor discrete device 3DD3767 type NPN silicon power transistor detailed specification
• GJB 33/10-1989 Detailed specifications for semiconductor discrete devices BT33 type PN silicon single-junction transistor
• GJB 33/001-1989 Blank detailed specification for high frequency low power transistors for semiconductor discrete devices
• GJB 33/8-1988 Detailed specification for semiconductor discrete devices GP, GT and GCT grade 3DK2369A type NPN silicon low power switching transistor
• GJB 33/3A-2021 Semiconductor discrete device 3DD3442 type NPN silicon power transistor detailed specification
• GJB 33/7-1988 Detailed specification for semiconductor discrete devices GP, GT and GCT grade 3CK2907 type PNP silicon low power switching transistor
• GJB 33/002-1989 Blank detailed specification for low-frequency high-power transistors for semiconductor discrete devices
• GJB 33/6A-2021 Detailed specifications for semiconductor discrete devices 3CG2604 and 3CG2605 type PNP silicon low power transistors
• GJB 33/5-1987 Detailed Specifications for Semiconductor Discrete Devices Detailed Specifications for GP and GT Grade 2CL59K, 2CL60K, 2CL80K, and 2CL150K Silicon High Voltage Rectifier Reactors
• GJB 33/1-1987 Detailed Specification for Semiconductor Discrete Devices Detailed Specification for GP, GT and GCT Grade 3DD3716 Type NPN Silicon Power Transistors
• GJB 33/003-1989 Blank detailed specification for single-gate field effect transistors under 5W and below 1GHz for semiconductor discrete devices
• GJB 33-1985 General Specification for Semiconductor Discrete Devices
• GJB 33B-2021 General Specification for Semiconductor Discrete Devices
• GJB 33A/14-2003 Semiconductor discrete device 3DG44 type silicon ultra-high frequency low noise transistor detailed specification
• GJB 33A/13-2003 Semiconductor discrete device 2CK37 type silicon high current switching diode detailed specifications
• GJB 33A/12-2003 Semiconductor discrete device 2CK36 type silicon high current switching diode detailed specifications
• GJB 680/33-1994 Detailed Specification for TNC Series Internal Jack to Jack Level 2 Adapters
• GJB 65/33-2017 Detailed Specification for Type JRW-221M Miniature Electromagnetic Relays with Failure Rate Classes
• GJB/Z 33-1993 Quality Control Guidelines for Aerospace Steel and High Temperature Alloys

未注明发布机构, gjb 33

• GJB 33A-1997 General Specification for Semiconductor Discrete Devices

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