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Half width and grain

Half width and grain, Total:18 items.

In the international standard classification, Half width and grain involves: Optoelectronics. Laser equipment, Integrated circuits. Microelectronics, Electronic components in general, Testing of metals, Semiconductor devices.

Professional Standard - Electron, Half width and grain

• SJ 2355.7-1983 Method of measurement for peak emission wavelength and spectral radiation bandwidth of light-emitting devices
• SJ 2658.12-1986 Methods of measurement for semiconductor infrared diodes Methods of measurement for peak emission wavelength and spectral half width
• SJ/T 2658.12-2015 Measuring method for semiconductor infrared-emitting diode.Part 12: Peak-emission wavelength and spectral radiant bandwidth

International Electrotechnical Commission (IEC), Half width and grain

• IEC 62435-5:2017 Electronic components - Long-term storage of electronic semiconductor devices - Part 5: Die and wafer devices

British Standards Institution (BSI), Half width and grain

• BS EN 62435-5:2017 Electronic components - Long-term storage of electronic semiconductor devices. - Part 5: Die and wafer devices

Association Francaise de Normalisation, Half width and grain

• NF A04-503:1988 Semi-products made from aluminium, copper, nickel and their alloys. Determination of grain size. Aluminium and aluminium alloys.
• NF A04-505:1988 Semi-products made from aluminium, copper, nickel and their alloys. Determination of grain size. Nickel and nickel alloys.

Defense Logistics Agency, Half width and grain

• DLA MIL-PRF-19500/634 C-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, N-CHANNEL SILICON, TYPES 2N7405, 2N7406, 2N7407, AND 2N7408, JANSD AND JANSR
• DLA MIL-PRF-19500/705 B-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7488T3, 2N7489T3, AND 2N7490T3, JANTXVR AND JANSR
• DLA MIL-PRF-19500/658 VALID NOTICE 2-2011 Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistor, P-Channel Silicon Type 2N7438, and 2N7439 JANSD and JANSR
• DLA MIL-PRF-19500/706 A VALID NOTICE 1-2010 Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistor, N-Channel, Silicon Types 2N7497T2, 2N7498T2, and 2N7499T2, JANTXVR and JANSR
• DLA MIL-PRF-19500/683 C-2008 SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT, N-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TYPE 2N7467U2, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
• DLA MIL-PRF-19500/689 VALID NOTICE 2-2011 Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistor, N-Channel Silicon Types 2N7512, 2N7513, and 2N7514 JANTXVD, R and JANSD, R
• DLA MIL-PRF-19500/687 B VALID NOTICE 1-2013 Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistor, N-Channel Silicon, Types 2N7509, 2N7510, and 2N7511, JANTXVD, R and JANSD, R
• DLA MIL-PRF-19500/741 A VALID NOTICE 1-2013 Semiconductor Device, Field Effect, Radiation Hardened (Total Dose and Single Event Effects) Transistor Die, N-Channel and PChannel, Silicon, Various Types, JANHC and JANKC
• DLA MIL-PRF-19500/747-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), SILICON, TYPE 2N7504T2, JANTXVR, JANTXVF, JANTXVG, JANTXVH, JANSF, JANSG, JANSR, AND JANSH
• DLA MIL-PRF-19500/739-2006 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) QUAD TRANSISTOR, N-CHANNEL AND P-CHANNEL, SILICON, TYPES 2N7518 AND 2N7518U, JANTXVR, F, AND JANSR, F
• DLA MIL-PRF-19500/700 A VALID NOTICE 1-2010 Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistor, N-Channel, Silicon, Types 2N7494U5, 2N7495U5, and 2N7496U5, JANTXVR, F, G, and H, and JANSR, F, G, and H

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