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field emission effect

field emission effect, Total:500 items.

In the international standard classification, field emission effect involves: Semiconductor devices, Radiation measurements, Integrated circuits. Microelectronics, Valves, Acoustics and acoustic measurements, Aerospace engines and propulsion systems, Geology. Meteorology. Hydrology, Audio, video and audiovisual engineering, Medical sciences and health care facilities in general, Company organization and management, Analytical chemistry, Electric road vehicles, Services, On-board equipment and instruments, Environmental protection, Mechanical structures for electronic equipment, Medical equipment, Space systems and operations, Electronic components in general, Aerospace electric equipment and systems, Software development and system documentation, Electrical engineering in general, Radiocommunications, Solar energy engineering, Vocabularies, Insulating materials, Accident and disaster control, Fibre optic communications, Jewellery, Non-ferrous metals, Radiation protection, Aircraft and space vehicles in general, Electromagnetic compatibility (EMC), Wind turbine systems and other alternative sources of energy, Installations in buildings, Non-destructive testing, Vibration and shock with respect to human beings, Test conditions and procedures in general, Road vehicles in general, Domestic, commercial and industrial heating appliances, Semiconducting materials, Power transmission and distribution networks, Nuclear energy engineering, Water quality, Farming and forestry, Mining and quarrying.

YU-JUS, field emission effect

JUS N.R1.330-1979 ipolar transistors. Definitions of scattering parameters
JUS N.R1.353-1979 Letter symbohfor semiconductor devices. Bipolar andfield-effect transistors.
JUS N.R1.323-1979 Termsand definitions for semiconductor devices. Bipolar and field-effect transistors.
JUS N.R1.451-1982 Field-effect transistor. General principles of measuring methods
JUS N.N6.363-1978 Radio Communications. Transmitters. Measurements particular to transmitters and transposers for television. Transient response
JUS N.R1.391-1979 Bvpolar transistors. Essential ratings and characteristics: power transistors
JUS N.N6.222-1985 Radiocommunications. Equipment used in the mppile seil/ices. Equipments employing A3E, F3E orG3E emissions. Methods of measurement. Radiation test site (30 m)
JUS N.N6.234-1985 Radiocommunications. Equipment used in the mobi/e services. Receivers employing A3E, F3E or G3E emissions. Methods of measurement. Intermodulation response
JUS N.N6.081-1977 Radio receivers for various cbsses uf emission. Radk>-frequency measurements on receivers for amplitude modulated emissions. Radio-frequency selectiviiy
JUS N.N6.224-1985 Radiocommunications. Equipment used in the mobile service. Equipments employing A3E, F3E or G3E emissions. Methods of measurement. Radiation test site for measurements above 100 MHz

Military Standard of the People's Republic of China-General Armament Department, field emission effect

GJB 9709-2020 Interface requirements between space application systems and launch site systems
GJB 5216A-2017 Manned spacecraft launch site test and launch procedures
GJB 4233A-2011 Technical safety rules of test and launch for spaceflight launching site
GJB 8975-2017 Requirements for monitoring atmospheric electric fields at space launch sites
GJB 3643-1999 Off-site emergency radiation monitoring methods
GJB 9730-2020 Specification for particle radiation effect detectors
GJB 7235-2011 Requirements for rehearsal program in spacecraft launching complex
GJB 8974-2017 Space Launch Site Safety Design Guidelines
GJB 5214.15-2003 Special ammunition effect test methods Part 15: Smoke screen effect test of smoke bombs
GJB 8670.15-2015 Special ammunition effect test methods Part 15: Smoke screen effect test of smoke bombs
GJB 1752-1993 Off-site emergency radiation monitoring system requirements
GJB 4402A-2011 Requirements for the check and maintenance of spacecraft launch complex equipments
GJB 8976-2017 Space Launch Site Star-Arrow Joint Operating Procedures
GJB 4115-2000 Requirements for preparation of training outline for satellite launch occasions
GJB 9869-2020 Space launch site air supply system design specifications
GJB 4402-2002 Space launch site equipment inspection and maintenance requirements
GJB 7335-2011 Bleed-off criterion for conventional propellants in spacecraft launching complex
GJB 7911-2012 Rules for conventional propellants filling of spacecraft launch site
GJB 7899-2012 Regulations on thunder & lightning precaution and alarm for aerospace launch site
GJB 7910-2012 Rules for cryogenic propellants filling of spacecraft launch site
GJB 5848-2006 Detection methods of propellant leak for satellite on launching site
GJB 6762-2009 Bleed-off criterion for cryogenic propellants in spacecraft launching complex
GJB 1474.4-1992 Propellant usage rules for space launch sites helium
GJB 1474.3-1992 Propellant Usage Rules for Space Launch Site Liquid Hydrogen
GJB 7062-2010 General specification for satellite test signal transmission system in the space launch center
GJB 8670.8-2015 Special ammunition effect test method Part 8: Arson bomb arson effect test live ammunition firing method
GJB 7348-2011 Requirement of emergency precaution plan for launch campaign
GJB 6900-2009 Safe application rules for conventional fueling system of spacecraft launch site
GJB 7344-2011 Safety application rules for tower service system of spacecraft launch site
GJB 7894-2012 Requirements of processing failure in test mission for spacecraft launch site
GJB 4996A-2017 Manned spacecraft and launch site system interface requirements
GJB 10146-2021 Construction Standards for Environmental Protection Facilities at Space Launch Sites
GJB 4020A-2015 Astronaut system technical requirements for launch site system
GJB 1474.1-1992 Rules for the use of propellants at the space launch site anhydrous hydrazine
GJB 3754-1999 Criteria for Ground Safety Control of Space Launch Sites
GJB 4233-2001 Technical safety rules for missile (rocket) and satellite launch sites
GJB 6763-2009 Safety criterion for cryogenic propellant system in space launching site
GJB 7900-2012 Leakage examine method for fueling system in spacecraft launch site
GJB 7061-2010 Interface requirement between launch site system and satellite system
GJB 9593-2019 Space launch site service tower facility installation operating procedures
GJB 4020-2000 Technical requirements for astronaut systems on launch site systems
GJB 1474.2-1992 Rules for the use of propellants at the space launch site: dimethylhydrazine
GJB/Z 41.4-1993 Military semiconductor discrete device series spectrum field effect transistor
GJB 7350-2011 Test method of pulse γ-ray radiation effects for military electronic devices
GJB 9397-2018 Test method for neutron radiation effects of military electronic components
GJB 7337-2011 Code for information transmission between launch vehicle,spacecraft and space launch site
GJB 7909-2012 Requirements for the use and maintenance for conventional fueling equipments of spacecraft launch site
GJB 5219-2004 Testing requirements for gas trace oil used in space launch site testing
GJB 10154-2021 Technical specifications for grounding systems of ground facilities at space launch sites
GJB 33/24-2021 Detailed Specification for CS0406-10 Silicon Field Effect Microwave Pulse Power Transistor
GJB 33/25-2021 Detailed Specification for CS0406-350 Silicon Field Effect Microwave Pulse Power Transistor
GJB 9091-2013 Regulation for air seal tightness test of conventional liquid launch vehicle at launch site
GJB 4033-2000 Technical requirements for launch sites for strategic missiles and launch vehicles
GJB 9080-2017 Safety guidelines for manned spacecraft oxygen supply systems at space launch sites
GJB 9711-2020 Guidelines for safe application of strategic missile test silos
GJB 5814-2006 Testing method of X-ray dose enhancement effect for military electronic devices
GJB 9592-2019 Space Launch Site Assembly and Testing Plant Facilities Installation Operating Procedures
GJB 5214.12-2003 Special ammunition effect test method Part 12: Photographic method for measuring effective smoke screen width and effective smoke screen height of smoke projectiles
GJB 8670.11-2015 Special ammunition effect test method Part 11: Photographic method for determination of effective smoke screen width and effective smoke screen height of smoke projectiles
GJB 2678-1996 Radar transmitting subsystem performance test method power efficiency load characteristics

IET - Institution of Engineering and Technology, field emission effect

RF MICROW MDL MEAS TECHNQ FLD EFFT TRANSIS-2010 RF and Microwave Modeling and Measurement Techniques for Field Effect Transistors
MICROW FLD-EFFE TRANSIS-1994 Microwave Field-Effect Transistors: Theory@ design and applications

American Institute of Aeronautics and Astronautics (AIAA), field emission effect

AIAA R-099-2001 Recommended Practice for Space Launch Integration

Defense Logistics Agency, field emission effect

DLA MIL-PRF-19500/634 C-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, N-CHANNEL SILICON, TYPES 2N7405, 2N7406, 2N7407, AND 2N7408, JANSD AND JANSR
DLA MIL-PRF-19500/705 B-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7488T3, 2N7489T3, AND 2N7490T3, JANTXVR AND JANSR
DLA MIL-PRF-19500/685 D (1)-2009 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7475T1, 2N7476T1, AND 2N7477T1 (TOTAL DOSE AND SINGLE EVENT EFFECTS), JANTXVR AND JANSR
DLA MIL-PRF-19500/685 E-2010 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7475T1, 2N7476T1, AND 2N7477T1 (TOTAL DOSE AND SINGLE EVENT EFFECTS), JANTXVR AND JANSR
DLA MIL-PRF-19500/685 F-2013 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7475T1, 2N7476T1, AND 2N7477T1 (TOTAL DOSE AND SINGLE EVENT EFFECTS), JANTXVR AND JANSR
DLA MIL-PRF-19500/704 B-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7485U3, 2N7486U3, AND 2N7487U3, JANTXVR AND JANSR
DLA MIL-PRF-19500/684 D (1)-2009 SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT, SILICON, N-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), TYPES 2N7472U2, 2N7473U2, AND 2N7474U2, JANTXVR AND JANSR
DLA MIL-PRF-19500/633 C-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, P-CHANNEL SILICON, TYPES 2N7403 AND 2N7404, JANSD AND JANSR
DLA MIL-PRF-19500/658 VALID NOTICE 2-2011 Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistor, P-Channel Silicon Type 2N7438, and 2N7439 JANSD and JANSR
DLA MIL-PRF-19500/706 A VALID NOTICE 1-2010 Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistor, N-Channel, Silicon Types 2N7497T2, 2N7498T2, and 2N7499T2, JANTXVR and JANSR
DLA MIL-PRF-19500/605 C-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7292, 2N7294, 2N7296, AND 2N7298, JANTXVM, D, R, H AND JANSM, D AND R
DLA MIL-PRF-19500/704 B (1)-2010 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7485U3, 2N7486U3, AND 2N7487U3, JANTXVR AND JANSR
DLA MIL-PRF-19500/752-2010 SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), LOGIC-LEVEL SILICON, TYPE 2N7608T2, JANTXVR, JANTXVF, JANSR, AND JANSF
DLA MIL-PRF-19500/704 C-2010 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7485U3, 2N7486U3, AND 2N7487U3, JANTXVR AND JANSR
DLA MIL-PRF-19500/705 C-2011 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7488T3, 2N7489T3, AND 2N7490T3, JANTXVR AND JANSR
DLA MIL-PRF-19500/749-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), SILICON, TYPES 2N7506U8 AND 2N7506U8C, JANTXVR, JANTXVF, JANSR AND JANSF
DLA SMD-5962-98636 REV C-2003 MICROCIRCUIT, LINEAR, RADIATION HARDENED JFET-INPUT OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
DLA SMD-5962-00521 REV E-2008 MICROCIRCUIT, DIGITAL-LINEAR, RADIATION HARDENED, COMPLEMENTARY SWITCH FET DRIVER, MONOLITHIC SILICON
DLA MIL-PRF-19500/683 C-2008 SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT, N-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TYPE 2N7467U2, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
DLA MIL-PRF-19500/747-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), SILICON, TYPE 2N7504T2, JANTXVR, JANTXVF, JANTXVG, JANTXVH, JANSF, JANSG, JANSR, AND JANSH
DLA MIL-PRF-19500/744-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), LOGIC-LEVEL SILICON, TYPES 2N7616UB, 2N7616UBC, JANTXVR, JANTXVF, JANSR, AND JANSF
DLA MIL-PRF-19500/687 B-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL SILICON, TYPES 2N7509, 2N7510, AND 2N7511, JANTXVD, R AND JANSD, R
DLA MIL-PRF-19500/689 VALID NOTICE 2-2011 Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistor, N-Channel Silicon Types 2N7512, 2N7513, and 2N7514 JANTXVD, R and JANSD, R
DLA MIL-PRF-19500/687 B VALID NOTICE 1-2013 Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistor, N-Channel Silicon, Types 2N7509, 2N7510, and 2N7511, JANTXVD, R and JANSD, R
DLA MIL-PRF-19500/745-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), LOGIC-LEVEL SILICON, TYPES 2N7626UB, 2N7626UBC, JANTXVR, JANTXVF, JANSR, AND JANSF
DLA MIL-PRF-19500/745 A-2009 SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), LOGIC-LEVEL SILICON, TYPES 2N7626UB, 2N7626UBC, JANTXVR, JANTXVF, JANSR, AND JANSF
DLA SMD-5962-00521 REV D-2003 MICROCIRCUIT, DIGITAL-LINEAR, RADIATION HARDENED, COMPLEMENTARY SWITCH FET DRIVER, MONOLITHIC SILICON
DLA MIL-PRF-19500/633 D-2013 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, P-CHANNEL SILICON, TYPES 2N7403 AND 2N7404, JANSD AND JANSR
DLA MIL-PRF-19500/683 C (1)-2009 SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT, N-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TYPE 2N7467U2, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
DLA MIL-PRF-19500/753-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7580T1, 2N7582T1, 2N7584T1, AND 2N7586T1, JANTXVR, JANTXVF, JANSR, AND JANSF
DLA MIL-PRF-19500/755-2010 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7588T3, 2N7590T3, 2N7592T3 AND 2N7594T3, JANTXVR, JANTXVF, JANSR AND JANSF
DLA MIL-PRF-19500/733 B-2010 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7523T1, 2N7523U2, 2N7524T1, AND 2N7524U2, JANTXVR, F AND JANSR, F
DLA MIL-PRF-19500/713 B-2010 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7549T1, 2N7549U2, 2N7550T1, AND 2N7550U2, JANTXVR, F AND JANSR, F
DLA MIL-PRF-19500/753 B-2013 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7580T1, 2N7582T1, 2N7584T1, AND 2N7586T1, JANTXVR, JANTXVF, JANSR, AND JANSF
DLA MIL-PRF-19500/741 A-2009 SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR DIE, N-CHANNEL AND P-CHANNEL, SILICON, VARIOUS TYPES, JANHC AND JANKC
DLA MIL-PRF-19500/757 A-2011 SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), LOGIC-LEVEL SILICON, TYPES 2N7624U3 AND 2N7625T3, JANTXVR, JANTXVF, JANSR, AND JANSF
DLA MIL-PRF-19500/741 A VALID NOTICE 1-2013 Semiconductor Device, Field Effect, Radiation Hardened (Total Dose and Single Event Effects) Transistor Die, N-Channel and PChannel, Silicon, Various Types, JANHC and JANKC
DLA MIL-PRF-19500/732 A-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7519U3, 2N7519U3C, 2N7519T3, 2N7520U3, 2N7520U3C, AND 2N7520T3, JANTXVR, F AND JANSR, F
DLA MIL-PRF-19500/743-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7503U8 AND 2N7503U8C, JANTXVR, F AND G AND JANSR, F AND G
DLA MIL-PRF-19500/746-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7587U3, 2N7587U3C, 2N7589U3, 2N7589U3C, 2N7591U3, 2N7591U3C, 2N7593U3, AND 2N7593U3C, JANTXVR, JANTXVF, JANSR, AND JANSF
DLA MIL-PRF-19500/697 C (1)-2009 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPE 2N7478T1, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
DLA MIL-PRF-19500/758-2010 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7609U8 AND 2N7609U8C, JANTXVR, F AND G AND JANSR, F AND G
DLA MIL-PRF-19500/697 D-2011 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPE 2N7478T1, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
DLA MIL-PRF-19500/746 B-2011 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7587U3, 2N7587U3C, 2N7589U3, 2N7589U3C, 2N7591U3, 2N7591U3C, 2N7593U3, AND 2N7593U3C, JANTXVR, JANTXVF, JANSR, AND JANSF
DLA MIL-PRF-19500/655 E-2012 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, P-CHANNEL SILICON, TYPES 2N7424U, 2N7425U, AND 2N7426U, JANTXVR AND F AND JANSR AND F
DLA MIL-PRF-19500/697 E-2013 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPE 2N7478T1, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
DLA MIL-PRF-19500/675 E-2013 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7463T2, 2N7464T2, 2N7463U5 AND 2N7464U5 JANTXVR AND JANSR
DLA MIL-PRF-19500/634 D-2013 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, N-CHANNEL SILICON, TYPES 2N7405, 2N7406, 2N7407, AND 2N7408, JANSD AND JANSR
DLA MIL-PRF-19500/739-2006 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) QUAD TRANSISTOR, N-CHANNEL AND P-CHANNEL, SILICON, TYPES 2N7518 AND 2N7518U, JANTXVR, F, AND JANSR, F
DLA MIL-PRF-19500/743 A-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7503U8 AND 2N7503U8C, JANTXVR, F, G AND H AND JANSR, F, G AND H
DLA MIL-PRF-19500/673 A (1)-2009 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7468U2 AND 2N7469U2 JANTXVR, F, G AND H AND JANSR, F, G AND H
DLA MIL-PRF-19500/698 D-2010 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7470T1 AND 2N7471T1, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
DLA MIL-PRF-19500/759 REV A-2012 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) DUAL TRANSISTOR, N-CHANNEL AND P-CHANNEL, LOGIC-LEVEL SILICON TYPES 2N7632UD, JANTXVR, F, AND JANSR, F
DLA MIL-PRF-19500/698 E-2013 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7470T1 AND 2N7471T1, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
DLA MIL-PRF-19500/700 A VALID NOTICE 1-2010 Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistor, N-Channel, Silicon, Types 2N7494U5, 2N7495U5, and 2N7496U5, JANTXVR, F, G, and H, and JANSR, F, G, and H
DLA MIL-PRF-19500/657 B-2011 SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED, TRANSISTOR DIE, N AND P-CHANNEL, SILICON VARIOUS TYPES JANHC AND JANKC
DLA MIL-PRF-19500/660 D-2013 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, P-CHANNEL SILICON, TYPES 2N7424, 2N7425, AND 2N7426, JANTXVR, JANTXVF, JANSR, AND JANSF
DLA MIL-PRF-19500/660 E-2013 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, P-CHANNEL SILICON, TYPES 2N7424, 2N7425, AND 2N7426, JANTXVR, JANTXVF, JANSR, AND JANSF
DLA MIL-PRF-19500/687 C-2013 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, N-CHANNEL SILICON, TYPES 2N7509, 2N7510, AND 2N7511, JANTXVD, R AND JANSD, R
DLA MIL-PRF-19500/676 E-2013 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7465T3 AND 2N7466T3 AND U3 SUFFIXES, JANTXVR AND JANSR
DLA MIL-PRF-19500/701 A (1)-2009 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7491T2, 2N7492T2, AND 2N7493T2, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
DLA MIL-PRF-19500/702 B (1)-2010 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7482T3, 2N7483T3, AND 2N7484T3, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
DLA MIL-PRF-19500/702 C-2010 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7482T3, 2N7483T3, AND 2N7484T3, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
DLA MIL-PRF-19500/703 B-2010 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7479U3, 2N7480U3, AND 2N7481U3, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
DLA MIL-PRF-19500/701 B-2011 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7491T2, 2N7492T2, AND 2N7493T2, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
DLA MIL-PRF-19500/700 B-2011 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7494U5, 2N7495U5, AND 2N7496U5, JANTXVR, F, G, AND H, AND JANSR, F, G, AND H
DLA SMD-5962-89659-1990 MICROCIRCUIT, LINEAR, FET BUFFER, HYBRID
DLA MIL-PRF-19500/740 (1)-2012 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) QUAD TRANSISTOR, N-CHANNEL AND P-CHANNEL, SILICON TYPES 2N7521U, 2N7522U, 2N7525, AND 2N7526, JANTXVR AND F AND JANSR AND F
DLA SMD-5962-01512-2001 MICROCIRCUIT, LINEAR, DUAL, HIGH SPEED, FET DRIVER, MONOLITHIC SILICON
DLA SMD-5962-01520 REV B-2003 MICROCIRCUIT, LINEAR, HIGH CURRENT FET DRIVER, MONOLITHIC SILICON
DLA MIL-PRF-19500/744 A-2010 SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), LOGIC-LEVEL SILICON, TYPES 2N7616UB, 2N7616UBC, 2N7616UBN, 2N7616UBCN, JANTXVR, JANTXVF, JANSR, AND JANSF
DLA MIL-PRF-19500/614 G-2012 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7380 AND 2N7381, JANTXV, M, D, R, F, G, AND H AND JANS, M, D, R, F, G, AND H
DLA MIL-PRF-19500/744 C-2012 SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), LOGIC-LEVEL SILICON, TYPES 2N7616UB, 2N7616UBC, 2N7616UBN, 2N7616UBCN, JANTXVR, JANTXVF, JANSR, AND JANSF
DLA MIL-PRF-19500/745 B-2010 SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), LOGIC-LEVEL SILICON, TYPES 2N7626UB, 2N7626UBC, 2N7626UBN, 2N7626UBCN, JANTXVR, JANTXVF, JANSR, AND JANSF
DLA MIL-PRF-19500/745 C-2011 SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), LOGIC-LEVEL SILICON, TYPES 2N7626UB, 2N7626UBC, 2N7626UBN, 2N7626UBCN, JANTXVR, JANTXVF, JANSR, AND JANSF
DLA MIL-PRF-19500/745 D-2012 SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), LOGIC-LEVEL SILICON, TYPES 2N7626UB, 2N7626UBC, 2N7626UBN, 2N7626UBCN, JANTXVR, JANTXVF, JANSR, AND JANSF
DLA MIL-PRF-19500/739 A-2013 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED QUAD TRANSISTOR, N-CHANNEL AND P-CHANNEL, SILICON, TYPES 2N7518 AND 2N7518U, JANTXVR, F, AND JANSR, F
DLA MIL-PRF-19500/662 E-2013 SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT RADIATION HARDENED P-CHANNEL, SILICON, TYPES 2N7422, 2N7422U, 2N7423, AND 2N7423U, JANTXVR AND F AND JANSR AND F
DLA MIL-PRF-19500/662 F-2013 SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT RADIATION HARDENED P-CHANNEL, SILICON, TYPES 2N7422, 2N7422U, 2N7423, AND 2N7423U, JANTXVR AND F AND JANSR AND F
DLA SMD-5962-01504 REV B-2007 MICROCIRCUIT, HYBRID, CUSTOM, FIELD EFFECT TRANSISTOR, 500 VOLT, WITH GATE PROTECTION
DLA SMD-5962-01504 REV D-2011 MICROCIRCUIT, HYBRID, CUSTOM, FIELD EFFECT TRANSISTOR, 500 VOLT, WITH GATE PROTECTION
DLA MIL-PRF-19500/295 E VALID NOTICE 1-2008 Semiconductor Device, Field-Effect Transistors, P-Channel, Silicon, Type 2N2608, JAN and UB
DLA MIL-PRF-19500/296 E VALID NOTICE 1-2008 Semiconductor Device, Field-Effect Transistors, P-Channel, Silicon, Type 2N2609, JAN and UB
DLA MIL-PRF-19500/296 F-2012 SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTORS, P-CHANNEL, SILICON, TYPE 2N2609, JAN AND UB
DLA MIL-PRF-19500/295 F-2012 SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTORS, P-CHANNEL, SILICON, TYPE 2N2608, JAN AND UB
DLA MIL-PRF-19500/630 F-2012 SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N7389, 2N7390, 2N7389U, 2N7389U5, AND 2N7390U, 2N7390U5, JANTXV, R, AND F AND JANS, R, AND F
DLA MIL-PRF-19500/663 E-2013 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7431, 2N7432, AND 2N7433, JANTXVR, F, G, AND H; AND JANSR, F, G, AND H
DLA MIL-PRF-19500/664 D-2012 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7431U, 2N7432U, AND 2N7433U, JANTXVR, F, G, AND H; AND JANSR, F, G, AND H
DLA MIL-PRF-19500/663 F-2013 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7431, 2N7432, AND 2N7433, JANTXVR, F, G, AND H; AND JANSR, F, G, AND H
DLA SMD-5962-01503 REV A-2005 MICROCIRCUIT, HYBRID, CUSTOM, FIELD EFFECT TRANSISTORS, 600 VOLT OR 500 VOLT, WITH GATE PROTECTION
DLA SMD-5962-97637 REV A-2003 MICROCIRCUIT, LINEAR, FAST JFET OPERATIONAL AMPLIFIER MONOLITHIC SILICON
DLA SMD-5962-98515 REV C-2006 MICROCIRCUIT, LINEAR, DUAL JFET-INPUT OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
DLA MIL-PRF-19500/750-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON, TYPE 2N7507U3, JANTX, JANTXV, AND JANS
DLA MIL-PRF-19500/750 VALID NOTICE 1-2013 Semiconductor Device, Field Effect Transistor, N-Channel, Silicon, Type 2N7507U3, JANTX, JANTXV, and JANS
DLA MIL-PRF-19500/748-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON, TYPE 2N7505T3, JANTX, JANTXV AND JANS
DLA MIL-PRF-19500/751-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON, TYPE 2N7508U3, JANTX, JANTXV, AND JANS
DLA MIL-PRF-19500/748 VALID NOTICE 1-2013 Semiconductor Device, Field Effect Transistor, P-Channel, Silicon, Type 2N7505T3, JANTX, JANTXV and JANS
DLA MIL-PRF-19500/751 VALID NOTICE 1-2013 Semiconductor Device, Field Effect Transistor, P-Channel, Silicon, Type 2N7508U3, JANTX, JANTXV, and JANS
DLA MIL-PRF-19500/615 F-2013 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7382 AND 2N7383, JANTXV M, D, R, AND F AND JANS M, D, R, AND F
DLA SMD-5962-81023 REV L-2006 MICROCIRCUIT, LINEAR, BI-FET OPERATIONAL AMPLIFIERS, MONOLITHIC SILICON
DLA SMD-5962-90500 REV B-2002 MICROCIRCUIT, HYBRID, LINEAR, HIGH SPEED, FET INPUT, OPERATIONAL AMPLIFIER
DLA SMD-5962-01503 REV C-2013 MICROCIRCUIT, HYBRID, CUSTOM, FIELD EFFECT TRANSISTORS, 600 VOLT OR 500 VOLT, WITH GATE PROTECTION
DLA MIL-PRF-19500/606 B-2004 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7291, 2N7293, 2N7295, AND 2N7297, JANTXVM, D, AND R, AND JANSM, D, AND R
DLA MIL-PRF-19500/662 C-2008 SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY), P-CHANNEL, SILICON, TYPES 2N7422, 2N7422U, 2N7423, AND 2N7423U, JANTXVR AND F AND JANSR AND F
DLA MIL-PRF-19500/605 D-2013 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7292, 2N7294, 2N7296, AND 2N7298, JANTXVM, D, R, H AND JANSM, D AND R

Illuminating Engineering Society of North America, field emission effect

IESNA HB-9 CHAPTER 5-2000 Nonvisual Effects of Optical Radiation

GB-REG, field emission effect

REG 14 CFR PART 420-2012 LICENSE TO OPERATE A LAUNCH SITE
REG NASA-LLIS-0363--1994 Lessons Learned - Spacecraft Receiver Degradation at Launch Site
REG NASA-LLIS-1713-2005 Lessons Learned - Simulate the Launch Site RF Configuration During I&T

Professional Standard - Electron, field emission effect

SJ 1974-1981 Detail specification for low frequency field-effect transistors,Type CS1
SJ 1975-1981 Detail specification for low frequency field-effect transistors,Type CS2
SJ 1976-1981 Detail specification for low frequency field-effect transistors,Type CS3
SJ 1977-1981 Detail specification for high frequency field-effect transistors,Type CS4
SJ 1978-1981 Detail specification for high frequency field-effect transistors,Type CS5
SJ 1979-1981 Detail specification for high frequency field-effect transistors,Type CS6
SJ 1980-1981 Detail specification for high frequency field-effect transistors,Type CS7
SJ 1981-1981 Detail specification for high frequency field-effect transistors,Type CS8
SJ 1982-1981 Detail specification for high frequency field-effect transistors,Type CS9
SJ 1990-1981 Detail specification for N channel junction pair field-effect transistors,Type CS20
SJ 1991-1981 Detail specification for N channel junction pair field-effect transistors,Type CS21
SJ 1992-1981 Detail specification for N channel junction pair field-effect transistors,Type CS22
SJ 1989-1981 Detail specification for Nchannel junction pair field-effect transistors,Type CS19
SJ 1986-1981 Detail specification for low frequency low noise field-effect transistors,Type CS13
SJ 1988-1981 Detail specification for low frequency low noise field-effect transistors,Type CS15
SJ 1984-1981 Detail specification for low frequency low noise field-effect transistors,Type CS11
SJ 1987-1981 Detail specification for low frequency low noise field-effect transistors,Type CS14
SJ 1983-1981 Detail specification for low frequency low noise field-effect transistors,Type CS10
SJ 1985-1981 Detail specification for low frequency low noise field-effect transistors,Type CS12
SJ 1994-1981 Detail specification for N channel junction pair field-effect transistors,Type CS24
SJ 2002-1981 Detail specification for N channel junction pair field-effect transistors,Type CS32
SJ 2003-1981 Detail specification for N channel junction pair field-effect transistors,Type CS33
SJ 2001-1981 Detail specification for N channel junction pair field-effect transistors,Type CS31
SJ 1995-1981 Detail specification for N channel junction pair field-effect transistors,Type CS25
SJ 1997-1981 Detail specification for N channel junction pair field-effect transistors,Type CS27
SJ 1998-1981 Detail specification for N channel junction pair field-effect transistors,Type CS28
SJ 2000-1981 Detail specification for N channel junction pair field-effect transistors,Type CS30
SJ 2004-1981 Detail specification for N channel junction pair field-effect transistors,Type CS34
SJ 1993-1981 Detail specification for N channel junction pair field-effect transistors,Type CS23
SJ 1996-1981 Detail specification for N channel junction pair field-effect transistors,Type CS26
SJ 1999-1981 Detail specification for N channel junction pair field-effect transistors,Type CS29
SJ 20231-1993 Verification regulation of KDK double gate FET Yfs tester
SJ 20789-2000 Rapid screening test methods for Thermal sensitive parameter of MOS field effect transistor
SJ 2748-1987 Blank detail specification for single-gate low noise microwave FETs
SJ 20232-1993 Verification regulation of KDK double gate FET Gp tester
SJ/T 11824-2022 Metal Oxide Semiconductor Field Effect Transistor (MOSFET) Equivalent Capacitance and Voltage Change Rate Test Method
SJ 2099-1982 Detail specification for N channel junction field-effect low power switching transistors,Type CS42
SJ 2103-1982 Detail specification for N channel junction field-effect low power switching transistors,Type CS46
SJ 2104-1982 Detail specification for N channel junction field-effect low power switching transistors,Type CS47
SJ 2092-1982 Detail specification for N channel junction field-effect low power switching transistors,Type CS35
SJ 2093-1982 Detail specification for N channel junction field-effect low power switching transistors,Type CS36
SJ 2094-1982 Detail specification for N channel junction field-effect low power switching transistors,Type CS37
SJ 2095-1982 Detail specification for N channel junction field-effect low power switching transistors,Type CS38
SJ 2096-1982 Detail specification for N channel junction field-effect low power switching transistors,Type CS39
SJ 2097-1982 Detail specification for N channel junction field-effect low power switching transistors,Type CS40
SJ 2105-1982 Detail specification for N channel junction field-effect low power switching transistors,Type CS48
SJ 2106-1982 Detail specification for N channel junction field-effect low power switching transistors,Type CS49
SJ 2107-1982 Detail specification for N channel junction field-effect low power switching transistors,Type CS50
SJ 2108-1982 Detail specification for N channel junction field-effect low power switching transistors,Type CS51
SJ 20184-1992 Semiconductor discrete device--Detail specification for field-effect transistor of Types CS3821,3822,3823
SJ 2100-1982 Detail specification for N channel junction field-effect low power switching transistors,Type CS43
SJ 2102-1982 Detail specification for N channel junction field-effect low power switching transistors,Type CS45
SJ 2098-1982 Detail specification for N channel junction field-effect low power switching transistors,Type CS41
SJ 2101-1982 Detail specification for N channel junction field-effect low power switching transistors,Type CS44

Korean Agency for Technology and Standards (KATS), field emission effect

KS C 5202-1980(2000) RELIABILITY ASSURED FIELD-EFFECT TRANSISTORS
KS C 5202-2004 RELIABILITY ASSURED FIELD-EFFECT TRANSISTORS
KS C IEC 60747-8:2002 Discrete devices－Part 8：Field－effect transistors
KS C IEC 60747-8:2020 Semiconductor devices — Discrete devices —Part 8: Field-effect transistors
KS M 0032-2009 General rules for ICP emission spectrochemical analysis

(U.S.) Joint Electron Device Engineering Council Soild State Technology Association, field emission effect

JEDEC JEP69-B-1973 Preferred Lead Configurations for Field-Effect Transistors
JEDEC JES2-1992 Transistor, Gallium Arsenide Power Fet, Generic Specification

American Society for Testing and Materials (ASTM), field emission effect

ASTM F526-97 Standard Test Method for Measuring Dose for Use in Linear Accelerator Pulsed Radiation Effects Tests
ASTM F526-16 Standard Test Method for Using Calorimeters for Total Dose Measurements in Pulsed Linear Accelerator or Flash X-ray Machines
ASTM F526-97(2003) Standard Test Method for Measuring Dose for Use in Linear Accelerator Pulsed Radiation Effects Tests
ASTM F526-11 Standard Test Method for Measuring Dose for Use in Linear Accelerator Pulsed Radiation Effects Tests
ASTM E1361-90(1999) Standard Guide for Correction of Interelement Effects in X-Ray Spectrometric Analysis
ASTM E1361-02(2021) Standard Guide for Correction of Interelement Effects in X-Ray Spectrometric Analysis
ASTM E2983-14(2019) Standard Guide for Application of Acoustic Emission for Structural Health Monitoring
ASTM F2174-02(2015) Standard Practice for Verifying Acoustic Emission Sensor Response
ASTM F2174-02(2019) Standard Practice for Verifying Acoustic Emission Sensor Response
ASTM F2174-02(2023) Standard Practice for Verifying Acoustic Emission Sensor Response
ASTM E2983-14 Standard Guide for Application of Acoustic Emission for Structural Health Monitoring
ASTM F1892-12(2018) Standard Guide for Ionizing Radiation (Total Dose) Effects Testing of Semiconductor Devices
ASTM F1892-06 Standard Guide for Ionizing Radiation (Total Dose) Effects Testing of Semiconductor Devices
ASTM F1892-04 Standard Guide for Ionizing Radiation (Total Dose) Effects Testing of Semiconductor Devices
ASTM F1892-98 Standard Guide for Ionizing Radiation (Total Dose) Effects Testing of Semiconductor Devices

Federal Aviation Administration (FAA), field emission effect

FAA 14 CFR PART 420-2011 LICENSE TO OPERATE A LAUNCH SITE

General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China, field emission effect

GB/T 37274-2018(英文版) Specifications for safe firing area map drawing at weather odification rocket launching sites
GB/T 15450-1995 Blank detail specification for silicon dual-qute field-effect transistors
GB/T 27781-2011 Field efficacy test methods and criterions of public health insecticides.Spray fluid
GB/T 6219-1998 Semiconductor devices--Discrete devices. Part 8: Field-effect transistors. Section One--Blank detail specification for single-gate field-effect transistors up to 5W and 1GHz
GB/T 15449-1995 Biank detail-specification for field-dffect transistors for case-rated swatching application
GB/T 4586-1994 Semiconductor devices. Discrete devices. Part 8: Field-effect transistors
GB/T 28044-2011(英文版) General guide of detection method for nanomaterial biological effect by transmission electron microscope
GB/T 17680.11-2008 Criteria for emergency planning and preparedness for nuclear power plants.Part 11:Criteria for the conduct of offsite radiological assessment for emergency response
GB/T 17248.3-1999 Acoustics--Noise emitted by machinery and equipment--Measurement of emission sound pressure levels at a work station and at other specified positions--Survey method in situ
GB/T 10263.5-1988 Basic enviromental testing procedures for radiation detectors--Effective testing of exposure to light

Professional Standard - Aerospace, field emission effect

QJ 2448-1993 Surface (ship) air missile approach launch procedure
QJ 2617-1994 Acceptance specification for microwave field effect transistor (microwave FET) package
QJ 3281-2006 Detection method of spacecraft propellant leakage at launch site
QJ 2573-1993 Ground (ship) air missile flight test approach launch safety requirements
QJ 1520-1988 总体
QJ 1520A-1996 Technical Requirements for Training Outlines for Missile, Launch Vehicle and Satellite Launch Sites

未注明发布机构, field emission effect

GJB 7345-2011 Space launch site warning sign requirements
GJB 2211-1994 Protection and health requirements for personnel at strategic missile and satellite launch sites (fields)

Japanese Industrial Standards Committee (JISC), field emission effect

JIS C 7214:1978 Reliability assured field-effect transistors

British Standards Institution (BSI), field emission effect

BS EN 62396-1:2016 Process management for avionics. Atmospheric radiation effects - Accommodation of atmospheric radiation effects via single event effects within avionics electronic equipment
DD IEC/TS 62396-1:2006 Process management for avionics. Atmospheric radiation effects - Accommodation of atmospheric radiation effects via single event effects within avionics electronic equipment
DD IEC/TS 62396-3:2008 Process management for avionics. Atmospheric radiation effects - Optimising system design to accommodate the single event effects (SEE) of atmospheric radiation
DD IEC/PAS 62396-3:2007 Process management for avionics. Atmospheric radiation effects - Optimising system design to accommodate the single event effects (SEE) of atmospheric radiation
BS IEC 60747-8:2010 Semiconductor devices. Discrete devices. Field-effect transistors
BS IEC 60747-8:2010+A1:2021 Semiconductor devices. Discrete devices - Field-effect transistors
BS IEC 60747-8:2001 Discrete semiconductor devices and integrated circuits - Field-effect transistors - Additional ratings and characteristics and amds in the measuring methods for power switching field effect transistors
BS EN 61828:2002 Ultrasonics - Focusing transducers - Definitions and measurement methods for the transmitted fields
BS ISO 14620-2:2011 Space systems. Safety requirements. Launch site operations
BS ISO 14620-2:2019 Tracked Changes. Space systems. Safety requirements. Launch site operations
BS IEC 62396-1:2012 Process management for avionics. Atmospheric radiation effects. Accommodation of atmospheric radiation effects via single event effects within avionics electronic equipment
BS DD IEC/TS 62396-1:2006 Process management for avionics - Atmospheric radiation effects - Accommodation of atmospheric radiation effects via single event effects within avionics electronic equipment
BS IEC 62396-1:2016 Process management for avionics. Atmospheric radiation effects. Accommodation of atmospheric radiation effects via single event effects within avionics electronic equipment
BS QC 750114:1996 Harmonized system of quality assessment for electronic components. Semiconductor devices. Discrete devices. Field-effect transistors. Blank detail specification for case-rated field-effect transistors for switching applications
PD ISO/TR 17400:2021 Space systems. Space launch complexes, integration sites and other facilities. General testing guidelines
BS EN 60544-1:2013 Electrical insulating materials. Determination of the effects of ionizing radiation. Radiation interaction and dosimetry
DD IEC/TS 62396-2:2008 Process management for avionics. Atmospheric radiation effects - Guidelines for single event effects testing for avionics systems
DD IEC/PAS 62396-2:2007 Process management for avionics. Atmospheric radiation effects - Guidelines for single event effects testing for avionics systems
BS EN 61967-5:2003 Integrated circuits - Measurement of electromagnetic emissions, 150 kHz to 1 GHz - Measurement of conducted emissions - Workbench Faraday Cage method
BS DD ENV 50204:1996 Radiated electromagnetic field from digital radio telephones - Immunity test
BS EN 60544-4:2003 Electrical insulating materials - Determination of the effects of ionizing radiation - Classification system for service in radiation environments
BS EN 16602-70-16:2021 Space engineering. Adhesive bonding for spacecraft and launcher applications
BS IEC 62396-2:2017 Tracked Changes. Process management for avionics. Atmospheric radiation effects. Guidelines for single event effects testing for avionics systems
DD IEC/PAS 62396-5:2007 Process management for avionics. Atmospheric radiation effects - Guidelines for assessing thermal neutron fluxes and effects in avionics systems
DD IEC/TS 62396-5:2008 Process management for avionics. Atmospheric radiation effects - Guidelines for assessing thermal neutron fluxes and effects in avionics systems
BS EN 419:2019 Gas-fired overhead luminous radiant heaters for non-domestic use. Safety and energy efficiency
BS DD IEC/TS 62396-4:2009 Process management for avionics. Atmospheric radiation effects. Guidelines for designing with high voltage aircraft electronics and potential single event effects
DD IEC/TS 62396-4:2008 Process management for avionics. Atmospheric radiation effects - Guidelines for designing with high voltage aircraft electronics and potential single event effects
DD IEC/PAS 62396-4:2007 Process management for avionics. Atmospheric radiation effects - Guidelines for designing with high voltage aircraft electronics and potential single event effects

Society of Automotive Engineers (SAE), field emission effect

SAE AIR1813B-2013 The Coanda/Refraction Concept for Gas Turbine Engine Test Cell Noise Suppression
SAE ARINC629P2-2-1999 MULTI-TRANSMITTER DATA BUS PART 2 APPLICATIONS GUIDE
SAE AIR5060-1997 Electronic Engine Control Design Guide for Electromagnetic Environmental Effects
SAE AIR5060A-2011 Electronic Engine Control Design Guide for Electromagnetic Environmental Effects

Standard Association of Australia （SAA）, field emission effect

IEC 62396-1:2016 RLV Process management for avionics — Atmospheric radiation effects — Part 1: Accommodation of atmospheric radiation effects via single event effects within avionics electronic equipment

CZ-CSN, field emission effect

CSN 35 8803-1983 Field effect transistors. Electric Parameter. Measurement Methods
CSN 40 4015-1974 Exposure yield measurement of gammaem tters
CSN 35 8797 Cast.8 IEC 747-8 ZA1+A2:1996 Semiconductor devices. Discrete devices. Part 8: Field-effect transistore

European Standard for Electrical and Electronic Components, field emission effect

EN 150012:1991 Blank detail specification: single gate field-effect transistors

PL-PKN, field emission effect

PN T01505 ArkusZ06-1974 Field-eftec? transis?ors Measuring method Ga?? current Icdo
PN T01505 ArkusZ11-1974 Field-effect ?ransis?ors Measuring method Drain-source breakdown yol?age U
PN T01505 ArkusZ01-1974 Field-effec? transistors Measuring me?hod Gate-source cut-o?f yol?aoe Ugs (Offi
PN T01505-19-1987 Field-effect transistors Measuring method Noise factor F and equivalent input noise yoltage U?
PN T01501 ArkusZ4-1973 Semiconductor deyictj Letter symbols of field-effect transistors porameters
PN T01505 ArkusZ10-1974 Field-effecl transistors Measuring method Ga?e-source breakdown voltage U(8R) GSS
PN T01505 ArkusZ09-1974 Field-effect transittors Measuring method Drain-source breakdown voltage U(BR) DSS
PN T01505 ArkusZ12-1974 Field-e??ecl transis?ors Measuring method Shorf-circui? inpof conducfance common source 9uss
PN T01505 ArkusZ14-1974 Field-effec? transistort Measuring method Short-circuit reyerse transfer conductance common source g,,?
PN T01505-17-1987 Field-effect transistors Measuring method Short-circuit utput capacitance in common source C22SS
PN T01505 ArkusZ02-1974 Field-effect transistors Measuring me?hod Ga?e-source ?hreshold yoltage Ugs (TO)
PN T01505-16-1987 Field-effect transistors Measuring method Short-circuit input capacitance in common source CnM

RU-GOST R, field emission effect

GOST 17466-1980 Transistors bipolar and field-effect. Basic parameters
GOST 20398.2-1974 Field-effect transistors. Noise figure measurement technique
GOST 20398.3-1974 Field-effect transistors. Forward transconductance measurement technique
GOST 20398.6-1974 Field-effect transistors. Gate leakage current measurement technique
GOST 20398.11-1980 Field-effect transistors. Short-circuit equivalent input noise voltage measurement technique
GOST 20398.0-1983 Field-effect transistors. General requirements for measuring electrical parameters
GOST 20398.8-1974 Field-effect transistors. Drain current for V(Gs)=0 measurement technique
GOST 20398.13-1980 Field-effect transistors. Drain source resistance measurement technique
GOST 20398.12-1980 Field-effect transistors. Drain residual current measurement technique
GOST 19095-1973 Field effect transistors. Terms, definitions and parameter symbols
GOST 20398.1-1974 Field-effect transistors. Shot-circuit forward transfer admittance measurement technique
GOST 20398.4-1974 Field-effect transistors. Active output conductance component measurement technique
GOST 20398.7-1974 Field-effect transistors. Threshold and cut-off voltage measurement technique
GOST 27973.2-1988 Gold. Method of atomic-emission analysis with inductive plasma
GOST 20398.14-1988 Field-effect transistors. Method of measuring output power, power gain and drain efficiency
GOST 25645.214-1985 Space crew radiation safety during space flight. Model of generalized radiobiological effect
GOST 20398.9-1980 Field-effect transistors. Forward fransconductance inpulse measurement technique
GOST 20398.10-1980 Field-effect transistors. Drain current for Vgs=0 impulse measurement technique
GOST 28353.2-1989 Silver. Method of atomic-emission analysis with inductive plasma
GOST R 53081-2008 Vibration. Assessment of exposure to hand-transmitted vibration using information on vibration emitted by machines
GOST 20398.5-1974 Field-effect transistors. Input transfer and output capacitance measurement technique

中国气象局, field emission effect

QX/T 546-2020 Terminology for space high-energy particle radiation effects

Association Francaise de Normalisation, field emission effect

NF EN 12543-4:1999 Essais non destructifs - Caractéristiques des foyers émissifs des tubes radiogènes industriels utilisés dans les essais non destructifs - Partie 4 : méthode par effet de bord
NF EN 50131-10:2014 Systèmes d'alarme - Systèmes d'alarme contre l'intrusion et les hold-up - Partie 10 : exigences d'application spécifiques pour les transmetteurs des locaux surveillés
NF R12-615*NF ISO 6313:1988 Road vehicles. Brake linings. Effects of heat on dimensions and form of disc brake pads. Test procedure.
NF L90-200-70-16*NF EN 16602-70-16:2021 Space engineering - Adhesive bonding for spacecraft and launcher applications
NF EN 16602-70-16:2021 Ingénierie spatiale - Collage adhésif pour les applications d'engins spatiaux et lanceurs
NF C26-290-1*NF EN 60544-1:2014 Electrical insulating materials - Determination of the effects of ionizing radiation - Part 1 : radiation interaction and dosimetry
NF EN 16603-10-12:2016 Ingénierie spatiale - Procédé pour le calcul de rayonnement reçu et ses effets, et une politique de marges de conception
NF E31-401*NF EN 419:2019 Gas-fired overhead luminous radiant heaters for non-domestic use - Safety and energy efficiency

IEC - International Electrotechnical Commission, field emission effect

TS 62396-1-2006 Process management for avionics – Atmospheric radiation effects – Part 1: Accommodation of atmospheric radiation effects via single event effects within avionics electronic equipment (Edition 1.0)
TS 62396-3-2008 Process management for avionics – Atmospheric radiation effects – Part 3: Optimising system design to accommodate the single event effects (SEE) of atmospheric radiation (Edition 1.0)
PAS 62396-3-2007 Process management for avionics – Atmospheric radiation effects – Part 3: Optimising system design to accommodate the Single Event Effects (SEE) of atmospheric radiation (Edition 1.0)
TS 62396-2-2008 Process management for avionics – Atmospheric radiation effects – Part 2: Guidelines for single event effects testing for avionics systems (Edition 1.0)
PAS 62396-2-2007 Process management for avionics – Atmospheric radiation effects – Part 2: Guidelines for single event effects testing for avionics systems (Edition 1.0)

International Electrotechnical Commission (IEC), field emission effect

IEC 60747-8:2000 Semiconductor devices - Part 8: Field-effect transistors
IEC TS 62396-1:2006 Process management for avionics - Atmospheric radiation effects - Part 1: Accommodation of atmospheric radiation effects via single event effects within avionics electronic equipment
IEC 60747-8-1:1987 Semiconductor devices - Discret devices. Part 8: Field-effect transistors. Blank detail specification for single-gate field-effect transistors, up to 5 W and 1 GHz.
IEC 60747-8-3:1995 Semiconductor devices - Discrete devices - Part 8: Field-effect transistors - Section 3: Blank detail specification for case-rated field-effect transistors for switching applications
IEC TS 62396-3:2008 Process management for avionics - Atmospheric radiation effects - Part 3: Optimising system design to accommodate the single event effects (SEE) of atmospheric radiation
IEC 60747-8-2:1993 Semicoductor devices; discrete devices; part 8: field-effect transistors; section 2: blank detail specification for field-effect transistors for case-rated power amplifier applications
IEC 60747-8:2010/AMD1:2021 Semiconductor devices - Discrete devices - Part 8: Field-effect transistors
IEC 60747-8:2010 Semiconductor devices - Discrete devices - Part 8: Field-effect transistors
IEC 60747-8:1984 Semiconductor devices. Discrete devices. Part 8 : Field-effect transistors
IEC 60747-8:2021 Semiconductor devices - Discrete devices - Part 8: Field-effect transistors
IEC 60747-8:2010+AMD1:2021 CSV Semiconductor devices - Discrete devices - Part 8: Field-effect transistors
IEC TS 62396-2:2008 Process management for avionics - Atmosperic radiation effects - Part 2: Guidelines for single event effects testing for avionics systems
IEC 62396-2:2017 Process management for avionics - Atmospheric radiation effects - Part 2: Guidelines for single event effects testing for avionics systems
IEC 61452:1995 Nuclear instrumentation - Measurement of gamma-ray emission rates of radionuclides - Calibration and use of germanium spectrometers
IEC 62373:2006 Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET)

Professional Standard - Radio Television Film, field emission effect

GY 5069-2001 Standard for selective site of MW and SW Transmitting station
GY 5068-2001 Standard for selective site of FM and TV Transmitting station

ECMA - European Association for Standardizing Information and Communication Systems, field emission effect

ECMA 172-1992 PROCEDURE FOR MEASUREMENT OF EMISSIONS OF ELECTRIC AND MAGNETIC FIELDS FROM VDUs FROM 5 Hz TO 400 kHz

Professional Standard - Business, field emission effect

SB/T 11065-2013 Specification on emergency supply management of agricultural products market

ASHRAE - American Society of Heating@ Refrigerating and Air-Conditioning Engineers@ Inc., field emission effect

ASHRAE SF-98-28-2-1998 Some Confinement Effects of Jets in Ventilated Rooms
ASHRAE 4247-1999 Effect of a Radiant Barrier on the Cooling Load of a Residential Application in a Hot and Arid Region: Attic Duct Effect

Hebei Provincial Standard of the People's Republic of China, field emission effect

DB13/T 5695-2023 GaN HEMT RF device trap effect test method

Group Standards of the People's Republic of China, field emission effect

T/CSAE 45-2015 Electromagnetic field emission intensity of electric vehicles (9KHZ-30MHZ)
T/APSIA 06-2021 Emergency Handling Guide for Parking Lot Emergencies
T/CIAA 020-2023 Application guide for surface spraying antimicrobial agents with quick-acting potency and durable activity in public places & properties
T/SIOT 804-2020 Specifications for the development of virtual reality application model scenarios
T/CEEIA 342-2018 Test procedure of wind turbine anti-islanding
T/GZBZ 22-2022 Standards for Emergency Response to Public Service Places
T/XCFW TG04-011.13-2023
T/GXAS 348-2022 Technical specification for radiation environmental monitoring of application site of nuclear instrument
T/BSRS 090-2023 Technical specification for soil radiation risk assessment at sites for the development and utilization site of associated radioactive mines
T/CPQS E00039-2022 Application technical requirements of full-effect air conditioning units for archaeological discover warehouse
T/BSRS 087-2022 Technicalcode for investigation of soil radioactive pollution at the development and utilization site of associated radioactive mines
T/CASAS 022-2022 Technical specification for gallium nitride field effect transistor used in line terminal units and triphase electricity meters
T/CASAS 007-2020 Test Specification for Silicon Carbide（SiC）Field-effect Transistors（MOSFET）Module of Electric Vehicles
T/CSEE 0154-2020 Guidance on Field Application of Radio Frequency Detection Method for Partial Discharge of Power Equipment
T/CASAS 006-2020 The general specification for silicon carbide metal-oxide-semiconductor field-effect-transistor
T/CGA 026-2021 Drilling Core Acoustic Emission Method for In-situ Stress Measurement of Gold Mine Rock Mass

IEEE - The Institute of Electrical and Electronics Engineers@ Inc., field emission effect

IEEE C63.7-2015 American National Standard Guide for Construction of Test Sites for Performing Radiated Emission Measurements
IEEE 539-2005 Standard Definitions of Terms Relating to Corona and Field Effects of Overhead Power Lines
IEEE 539-1990 Standard Definitions of Terms Relating to Corona and Field Effects of Overhead Power Lines

Institute of Electrical and Electronics Engineers (IEEE), field emission effect

IEEE/ANSI C63.7-2015 American National Standard Guide for Construction of Test Sites for Performing Radiated Emission Measurements
ANSI/IEEE PC63.7/D rev17, December 2014 American National Standard Guide for Construction of Test Sites for Performing Radiated Emission Measurements
IEEE Std C63.18-2014 Recommended Practice for an on-Site, Ad Hoc Test Method for Estimating Electrimagnetic Immunity of Medical Devices to Radiated Radio-Frequency (RF) Emissions from RF Transmitters
IEEE Std C63.7-2015 American National Standard Guide for Construction of Test Sites for Performing Radiated Emission Measurements
IEEE 539-2020 Definitions of Terms Relating to Corona and Field Effects of Overhead Power Lines
IEEE Std C63.7-2005 Standard Guide for Construction of Open Area Test Sites for Performing Radiated Emission Measurements
ANSI PC63.18/D6.9, April 2014 American National Standard Recommended Practice for an On-Site, Ad Hoc Test Method for Estimating Electromagnetic Immunity of Medical Devices to Radiated Radio-Frequency (RF) Emissions from RF Transmitters
IEEE/ANSI C63.18-2014 American National Standard Recommended Practice for an On-Site, Ad Hoc Test Method for Estimating Electromagnetic Immunity of Medical Devices to Radiated Radio-Frequency (RF) Emissions from RF Transmitters
ANSI C63.18-2014 American National Standard Recommended Practice for an On-Site, Ad Hoc Test Method for Estimating Electromagnetic Immunity of Medical Devices to Radiated Radio-Frequency (RF) Emissions from RF Transmitters

WRC - Welding Research Council, field emission effect

BULLETIN 87-1963 CRITICAL F ACTORS IN THE INTERPRETATION OF RADIATION EFFECTS ON THE MECHANICAL PROPERTIES OF STRUCTURAL METALS COMMERCIAL IMPLICATIONS OF RADIATION EFFECTS ON REACTOR PRESSURE VESSEL DESIGN@ FABRICATI

American Nuclear Society (ANS), field emission effect

ANS 3.8.6-1995 Criteria for the Conduct of Offsite Radiological Assessment for Emergency Response for Nuclear Power Plants
ANS 3.8.5-1992 Criteria for Emergency Radiological Field Monitoring, Sampling, and Analysis
ANS 3.7.1-1995 Facilities and Medical Care for On-Site Nuclear Power Plant Radiological Emergencies

ANS - American Nuclear Society, field emission effect

3.8.6-1995 Criteria for the Conduct of Offsite Radiological Assessment for Emergency Response for Nuclear Power Plants
3.8.5-1992 Criteria for Emergency Radiological Field Monitoring@ Sampling@ and Analysis
3.7.1-1995 Facilities and Medical Care for On-Site Nuclear Power Plant Radiological Emergencies

TH-TISI, field emission effect

TIS 2124-2002 Semiconductor devices.discrete devices.part 8: field.effect transistors section three: blank detail specification for case.rated field.effect transistors for switching applications
TIS 2122-2002 Semiconductor devices.discrete devices.part 8: field.effect transistors section one: blank detail specification for single.gate field.effect transistors, up to 5 w and 1 ghz
TIS 2121-2002 Semiconductor devices.discrete devices.part 8: field.effect transistors
TIS 2123-2002 Semiconductor devices.discrete devices.part 8: field.effect transistors section two: blank detail specification for field.effect transistors for case.rated power amplifier applications

RO-ASRO, field emission effect

STAS 12389-1985 FIELD-EFFECT TRANSISTORS Limiting values and basic electrical parameters nomenclature
STAS SR CEI 747-8-1993 Semiconductor devices Discrete devices Part 8: Field effect transistors
STAS 12124/3-1983 Semiconductor devices FIFL D-EFFECT TRANZISTORS Methods for measuring electrical static parameters
STAS 12124/4-1983 Semiconductor devices FIELD-EFECT TRANZISTORS Methods for measuring electrical static parameters
STAS 7128/8-1986 LETTER SYMBOLS FOR SEMICONDUCTOR DEVICES AND INTEGRATED CIRCUITS Symbols for field effect transitors

National Metrological Verification Regulations of the People's Republic of China, field emission effect

JJG(电子) 04006-1987 BJ2913 Model Field Effect Tube Parameter Tester Trial Verification Regulations
JJG(电子) 04049-1995 Guoyang Double Gate Field Effect Transistor CX Tester Verification Regulations
JJG(电子) 04046-1995 Verification regulations for QC-13 type field effect transistor transconductance parameter tester

American Gear Manufacturers Association, field emission effect

AGMA 08FTM12-2008 In-situ Measurement of Stresses in Carburized Gears via Neutron Diffraction

American National Standards Institute （ANSI), field emission effect

ANSI/IEEE C63.18:2014 Recommended Practice for an on-Site@ Ad Hoc Test Method for Estimating Electrimagnetic Immunity of Medical Devices to Radiated Radio-Frequency (RF) Emissions from RF Transmitters
ANSI/ASTM F2174:2002 Practice for Verifying Acoustic Emission Sensor Response
ANSI/SCTE 110-2011 Hybrid Fiber Coax Outside Plant Status Monitoring: Alternative Power Supply to Transponder Interface Bus (PSTIB) For HMS Transponders
ANSI/IEEE C63.18:1997 Recommended Practice for an On-Site, Ad-Hoc Test Method for Estimating Radiated Electromagnetic Immunity of Medical Devices to Specific Radio Frequency Transmitters
ANSI/IEEE 539:2005 Standard Definitions of Terms Relating to Corona and Field Effects of Overhead Power Lines

FI-SFS, field emission effect

SFS 5519-1989

International Organization for Standardization (ISO), field emission effect

ISO 20892:2018 Space systems - Launch complexes modernization process - General requirements
ISO 26870:2022 Space systems — Launch pad and integration site operational documents
ISO 14620-2:2011 Space systems - Safety requirements - Part 2: Launch site operations
ISO 14620-2:2000 Space systems-- Safety requirments - Part 2: Launch site operations
ISO 14620-2:2019 Space systems — Safety requirements — Part 2: Launch site operations
ISO 11202:1995 Acoustics - Noise emitted by machinery and equipment - Measurement of emission sound pressure levels at a work station and at other specified positions - Survey method in situ
ISO 14223-3:2018 Radiofrequency identification of animals — Advanced transponders — Part 3: Applications

中华人民共和国国家卫生和计划生育委员会, field emission effect

GBZ/T 163-2017 Standards of medical follow-up for long-term effects of acute radiation sickness from occupational external exposure

SAE - SAE International, field emission effect

SAE ARP1795A-1984 STRESS-CORROSION/TITANIUM ALLOYS EFFECT CLEANING AGENTS ON AIRCRAFT ENGINE MATERIALS
SAE AIR6219-2018 Development of Atmospheric Neutron Single Event Effects Analysis for Use in Safety Assessments

U.S. Military Regulations and Norms, field emission effect

ARMY MIL-T-49303 NOTICE 1-1996 TRANSPONDER SET AN/PPN-19(V)
ARMY MIL-T-49303 (1)-1988 TRANSPONDER SET AN/PPN-19(V)
ARMY MIL-T-49303-1988 TRANSPONDER SET AN/PPN-19(V)

United States Navy, field emission effect

NAVY MIL-T-85138 VALID NOTICE 1-1987 TRANSMITTER, PULSE CODE MODULATION (FOR SECURE TELEMETRY APPLICATIONS)
NAVY MIL-T-85138-1979 TRANSMITTER, PULSE CODE MODULATION (FOR SECURE TELEMETRY APPLICATIONS)

Professional Standard - Energy, field emission effect

NB/T 32014-2013 Testing code for anti-islanding of photovoltaic power station
NB/T 32010-2013 The anti-islanding testing code for inverter of utility-interconnected photovoltaic power station

National Fire Protection Association (NFPA), field emission effect

NFPA 1410-2005 Standard on Training for Initial Emergency Scene Operations Effective Date: 2/7/2005
NFPA 1410-2015 Standard on Training for Initial Emergency Scene Operations (Effective Date: 12/01/2014)
NFPA 610-2014 Guide for Emergency and Safety Operations at Motorsports Venues (Effective Date: 06/17/2013)
NFPA 1002-2014 Guide for Emergency and Safety Operations at Motorsports Venues (Effective Date: 06/17/2013)
NFPA 610-2009 Guide for Emergency and Safety Operations at Motorsports Venues Effective Date: 7/18/2008

KR-KS, field emission effect

KS C IEC 60747-8-2020 Semiconductor devices — Discrete devices —Part 8: Field-effect transistors
KS I ISO 11348-2-2009 Water quality－Determination of the inhibitory effect of water samples on the light emission of vibrio fischeri(Luminescent bacteria test)－Part 2：method using liquid-dried bacteria

ITU-R - International Telecommunication Union/ITU Radiocommunication Sector, field emission effect

ITU-R P.526-1-1982 Propagation by Diffraction - Section 5B - Effects of the Ground (Including Ground-Wave Propagation)
REPORT BT.2142-2009 The effect of the scattering of digital television signals from a wind turbine

Professional Standard - Petrochemical Industry, field emission effect

SH/T 0686-1999 Standard test method for use of the refractometer for field test determination of the freezing point of aqueous engine coolants

国家市场监督管理总局、中国国家标准化管理委员会, field emission effect

GB/T 38801-2020 Technical requirements for content distribution network—Interconnection use cases

工业和信息化部, field emission effect

YD/T 2876-2015 Content distribution network technology requirements interconnection application scenarios
YD/T 3430-2018 Content distribution network technology requirements, application scenarios and needs

IECQ - IEC: Quality Assessment System for Electronic Components, field emission effect

QC 750106-1993 Semiconductor Devices Discrete Devices Part 8: Field-Effect Transistors Section Two - Blank Detail Specification for Field-Effect Transistors for Case-Rated Power Amplifier Applications (IEC 747-8-2 ED 1)
QC 750114-1995 Semiconductor Devices - Discrete Devices - Part 8: Field-Effect Transistors - Section 3: Blank Detail Specification for Case-Rated Field-Effect Transistors for Switching Applications (IEC 747-8-3 ED 1)
QC 750114-1996 Harmonized System of Quality Assessment for Electronic Components Semiconductor Devices - Discrete Devices Field-Effect Transistors - Blank Detail Specification for Case-Rated Field-Effect Transistors for Switching Applications (IEC 747-8-3:1995)
QC 750112-1987 Semiconductor Devices Discrete Devices Part 8: Field-Effect Transistors Section One - Blank Detail Specification for Single-Gate Field- Effect Transistors@ up to 5W and 1 GHz (IEC 747-8-1 ED 1)

Qinghai Provincial Standard of the People's Republic of China, field emission effect

DB63/T 1820-2020 Determination of available potassium and slow-acting potassium in soil by inductively coupled plasma emission spectrometry

European Committee for Electrotechnical Standardization（CENELEC）, field emission effect

EN 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)

IN-BIS, field emission effect

IS 4400 Pt.10-1983

TIA - Telecommunications Industry Association, field emission effect

TSB-4979-2013 Practical Considerations for Implementation of Encircled Flux Launch Conditions in the Field

能源, field emission effect

NB/T 31069-2015 Wind farm monitoring system communication - mapping to communication protocols

(U.S.) Telecommunications Industries Association , field emission effect

TIA TSB-4979-2013 Practical Considerations for Implementation of Encircled Flux Launch Conditions in the Field
TIA-526-2-1989 OFSTP-2 Effective Transmitter Output Power Coupled Into Single-Mode Fiber Optic Cable ANSI APPROVAL WITHDRAWN FEBRUARY 2004

GOSTR, field emission effect

GOST 28353.2-2017 Silver. Method of inductively coupled plasma atomic-emission analysis

AGMA - American Gear Manufacturers Association, field emission effect

08FTM12-2008 In-situ Measurement of Stresses in Carburized Gears via Neutron Diffraction

Professional Standard - Electricity, field emission effect

DL/T 2074-2019 Fieldbus Application Technical Specifications of Thermal Power Plant Foundation

Heilongjiang Provincial Standard of the People's Republic of China, field emission effect

DB23/T 3289-2022 Requirements for emergency response capacity building in public gathering places

National Association of Corrosion Engineers (NACE), field emission effect

NACE 7K198-1998 Predictably Effective Equipment and In Situ Processes Applied to Water Systems Item No. 24195

Professional Standard - Aviation, field emission effect

HB 20116-2012 Test method for residual stress analysis on aero-engine blade by x-ray diffraction

German Institute for Standardization, field emission effect

DIN EN 16602-70-16:2022-02 Space engineering - Adhesive bonding for spacecraft and launcher applications; English version EN 16602-70-16:2021
DIN EN 419:2020 Gas-fired overhead luminous radiant heaters for non-domestic use - Safety and energy efficiency
DIN EN 419:2020-04 Gas-fired overhead luminous radiant heaters for non-domestic use - Safety and energy efficiency; German version EN 419:2019 / Note: This standard is part of the DVGW body of rules.

ES-UNE, field emission effect

UNE-CEN/TR 17602-60-02:2021 Space product assurance - Techniques for radiation effects mitigation in ASICs and FPGAs handbook (Endorsed by Asociación Española de Normalización in January of 2022.)
UNE-EN 419:2021 Gas-fired overhead luminous radiant heaters for non-domestic use - Safety and energy efficiency
UNE-EN 16602-70-16:2021 Space engineering - Adhesive bonding for spacecraft and launcher applications (Endorsed by Asociación Española de Normalización in December of 2021.)

中华人民共和国国家质量监督检验检疫总局、中国国家标准化管理委员会, field emission effect

GB/T 18387-2017 Limits and test method of magnetic and electric field strength from eletric vehicles
GB/T 34955-2017 Atmospheric radiation effects—Guidelines for single event effects testing for avionics systems

CEN - European Committee for Standardization, field emission effect

PREN 419-2017 Gas-fired overhead luminous radiant heaters for non-domestic use - Safety and energy efficiency

Jiangxi Provincial Standard of the People's Republic of China, field emission effect

DB36/T 1632-2022 Determination of Soil Available Boron by Inductively Coupled Plasma Emission Spectrometry

American Society of Mechanical Engineers (ASME), field emission effect

ASME 1968-1-2001 Use of Acoustic Emission Examination in Lieu of Radiography Section VIII, Division 1; SUPP 6 R(2002)

International Telecommunication Union (ITU), field emission effect

ITU-T K.62 SPANISH-2004 System level radiated emissions compliance using mathematical modelling

IX-ECMA, field emission effect

ECMA 355-2008 Corporate Telecommunication Networks - Tunnelling of QSIG over SIP

ZA-SANS, field emission effect

SANS 11202:1995 Acoustics - Noise emitted by machinery and equipment - Measurement of emission sound pressure levels at a work station and at other specified positions - Survey method in situ