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effect radiation

effect radiation, Total:101 items.

In the international standard classification, effect radiation involves: Radiation measurements, Insulating materials, On-board equipment and instruments, Geology. Meteorology. Hydrology, Radiation protection, Aircraft and space vehicles in general, Space systems and operations, Company organization and management, Aerospace electric equipment and systems, Electronic components in general, Materials for aerospace construction.

Defense Logistics Agency, effect radiation

DLA MIL-PRF-19500/704 B-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7485U3, 2N7486U3, AND 2N7487U3, JANTXVR AND JANSR
DLA MIL-PRF-19500/633 C-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, P-CHANNEL SILICON, TYPES 2N7403 AND 2N7404, JANSD AND JANSR
DLA MIL-PRF-19500/658 VALID NOTICE 2-2011 Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistor, P-Channel Silicon Type 2N7438, and 2N7439 JANSD and JANSR
DLA MIL-PRF-19500/704 B (1)-2010 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7485U3, 2N7486U3, AND 2N7487U3, JANTXVR AND JANSR
DLA MIL-PRF-19500/704 C-2010 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7485U3, 2N7486U3, AND 2N7487U3, JANTXVR AND JANSR
DLA MIL-PRF-19500/705 C-2011 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7488T3, 2N7489T3, AND 2N7490T3, JANTXVR AND JANSR
DLA MIL-PRF-19500/662 E-2013 SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT RADIATION HARDENED P-CHANNEL, SILICON, TYPES 2N7422, 2N7422U, 2N7423, AND 2N7423U, JANTXVR AND F AND JANSR AND F
DLA MIL-PRF-19500/662 F-2013 SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT RADIATION HARDENED P-CHANNEL, SILICON, TYPES 2N7422, 2N7422U, 2N7423, AND 2N7423U, JANTXVR AND F AND JANSR AND F
DLA MIL-PRF-19500/687 B-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL SILICON, TYPES 2N7509, 2N7510, AND 2N7511, JANTXVD, R AND JANSD, R
DLA MIL-PRF-19500/689 VALID NOTICE 2-2011 Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistor, N-Channel Silicon Types 2N7512, 2N7513, and 2N7514 JANTXVD, R and JANSD, R
DLA MIL-PRF-19500/687 B VALID NOTICE 1-2013 Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistor, N-Channel Silicon, Types 2N7509, 2N7510, and 2N7511, JANTXVD, R and JANSD, R
DLA MIL-PRF-19500/753-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7580T1, 2N7582T1, 2N7584T1, AND 2N7586T1, JANTXVR, JANTXVF, JANSR, AND JANSF
DLA MIL-PRF-19500/755-2010 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7588T3, 2N7590T3, 2N7592T3 AND 2N7594T3, JANTXVR, JANTXVF, JANSR AND JANSF
DLA MIL-PRF-19500/733 B-2010 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7523T1, 2N7523U2, 2N7524T1, AND 2N7524U2, JANTXVR, F AND JANSR, F
DLA MIL-PRF-19500/713 B-2010 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7549T1, 2N7549U2, 2N7550T1, AND 2N7550U2, JANTXVR, F AND JANSR, F
DLA MIL-PRF-19500/753 B-2013 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7580T1, 2N7582T1, 2N7584T1, AND 2N7586T1, JANTXVR, JANTXVF, JANSR, AND JANSF
DLA MIL-PRF-19500/732 A-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7519U3, 2N7519U3C, 2N7519T3, 2N7520U3, 2N7520U3C, AND 2N7520T3, JANTXVR, F AND JANSR, F
DLA MIL-PRF-19500/743-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7503U8 AND 2N7503U8C, JANTXVR, F AND G AND JANSR, F AND G
DLA MIL-PRF-19500/746-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7587U3, 2N7587U3C, 2N7589U3, 2N7589U3C, 2N7591U3, 2N7591U3C, 2N7593U3, AND 2N7593U3C, JANTXVR, JANTXVF, JANSR, AND JANSF
DLA MIL-PRF-19500/697 C (1)-2009 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPE 2N7478T1, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
DLA MIL-PRF-19500/758-2010 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7609U8 AND 2N7609U8C, JANTXVR, F AND G AND JANSR, F AND G
DLA MIL-PRF-19500/697 D-2011 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPE 2N7478T1, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
DLA MIL-PRF-19500/746 B-2011 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7587U3, 2N7587U3C, 2N7589U3, 2N7589U3C, 2N7591U3, 2N7591U3C, 2N7593U3, AND 2N7593U3C, JANTXVR, JANTXVF, JANSR, AND JANSF
DLA MIL-PRF-19500/655 E-2012 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, P-CHANNEL SILICON, TYPES 2N7424U, 2N7425U, AND 2N7426U, JANTXVR AND F AND JANSR AND F
DLA MIL-PRF-19500/697 E-2013 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPE 2N7478T1, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
DLA MIL-PRF-19500/662 C-2008 SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY), P-CHANNEL, SILICON, TYPES 2N7422, 2N7422U, 2N7423, AND 2N7423U, JANTXVR AND F AND JANSR AND F
DLA MIL-PRF-19500/743 A-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7503U8 AND 2N7503U8C, JANTXVR, F, G AND H AND JANSR, F, G AND H
DLA MIL-PRF-19500/673 A (1)-2009 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7468U2 AND 2N7469U2 JANTXVR, F, G AND H AND JANSR, F, G AND H
DLA MIL-PRF-19500/698 D-2010 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7470T1 AND 2N7471T1, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
DLA MIL-PRF-19500/759 REV A-2012 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) DUAL TRANSISTOR, N-CHANNEL AND P-CHANNEL, LOGIC-LEVEL SILICON TYPES 2N7632UD, JANTXVR, F, AND JANSR, F
DLA MIL-PRF-19500/698 E-2013 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7470T1 AND 2N7471T1, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
DLA MIL-PRF-19500/701 A (1)-2009 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7491T2, 2N7492T2, AND 2N7493T2, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
DLA MIL-PRF-19500/702 B (1)-2010 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7482T3, 2N7483T3, AND 2N7484T3, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
DLA MIL-PRF-19500/702 C-2010 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7482T3, 2N7483T3, AND 2N7484T3, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
DLA MIL-PRF-19500/703 B-2010 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7479U3, 2N7480U3, AND 2N7481U3, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
DLA MIL-PRF-19500/701 B-2011 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7491T2, 2N7492T2, AND 2N7493T2, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
DLA MIL-PRF-19500/700 B-2011 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7494U5, 2N7495U5, AND 2N7496U5, JANTXVR, F, G, AND H, AND JANSR, F, G, AND H
DLA MIL-PRF-19500/740 (1)-2012 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) QUAD TRANSISTOR, N-CHANNEL AND P-CHANNEL, SILICON TYPES 2N7521U, 2N7522U, 2N7525, AND 2N7526, JANTXVR AND F AND JANSR AND F
DLA MIL-PRF-19500/614 G-2012 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7380 AND 2N7381, JANTXV, M, D, R, F, G, AND H AND JANS, M, D, R, F, G, AND H
DLA MIL-PRF-19500/633 D-2013 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, P-CHANNEL SILICON, TYPES 2N7403 AND 2N7404, JANSD AND JANSR
DLA MIL-PRF-19500/675 E-2013 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7463T2, 2N7464T2, 2N7463U5 AND 2N7464U5 JANTXVR AND JANSR
DLA MIL-PRF-19500/634 D-2013 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, N-CHANNEL SILICON, TYPES 2N7405, 2N7406, 2N7407, AND 2N7408, JANSD AND JANSR
DLA MIL-PRF-19500/657 B-2011 SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED, TRANSISTOR DIE, N AND P-CHANNEL, SILICON VARIOUS TYPES JANHC AND JANKC
DLA MIL-PRF-19500/660 D-2013 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, P-CHANNEL SILICON, TYPES 2N7424, 2N7425, AND 2N7426, JANTXVR, JANTXVF, JANSR, AND JANSF
DLA MIL-PRF-19500/660 E-2013 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, P-CHANNEL SILICON, TYPES 2N7424, 2N7425, AND 2N7426, JANTXVR, JANTXVF, JANSR, AND JANSF
DLA MIL-PRF-19500/687 C-2013 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, N-CHANNEL SILICON, TYPES 2N7509, 2N7510, AND 2N7511, JANTXVD, R AND JANSD, R
DLA MIL-PRF-19500/676 E-2013 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7465T3 AND 2N7466T3 AND U3 SUFFIXES, JANTXVR AND JANSR
DLA MIL-PRF-19500/634 C-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, N-CHANNEL SILICON, TYPES 2N7405, 2N7406, 2N7407, AND 2N7408, JANSD AND JANSR
DLA MIL-PRF-19500/705 B-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7488T3, 2N7489T3, AND 2N7490T3, JANTXVR AND JANSR
DLA MIL-PRF-19500/685 D (1)-2009 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7475T1, 2N7476T1, AND 2N7477T1 (TOTAL DOSE AND SINGLE EVENT EFFECTS), JANTXVR AND JANSR
DLA MIL-PRF-19500/685 E-2010 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7475T1, 2N7476T1, AND 2N7477T1 (TOTAL DOSE AND SINGLE EVENT EFFECTS), JANTXVR AND JANSR
DLA MIL-PRF-19500/685 F-2013 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7475T1, 2N7476T1, AND 2N7477T1 (TOTAL DOSE AND SINGLE EVENT EFFECTS), JANTXVR AND JANSR
DLA MIL-PRF-19500/706 A VALID NOTICE 1-2010 Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistor, N-Channel, Silicon Types 2N7497T2, 2N7498T2, and 2N7499T2, JANTXVR and JANSR
DLA MIL-PRF-19500/739 A-2013 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED QUAD TRANSISTOR, N-CHANNEL AND P-CHANNEL, SILICON, TYPES 2N7518 AND 2N7518U, JANTXVR, F, AND JANSR, F
DLA MIL-PRF-19500/747-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), SILICON, TYPE 2N7504T2, JANTXVR, JANTXVF, JANTXVG, JANTXVH, JANSF, JANSG, JANSR, AND JANSH
DLA MIL-PRF-19500/630 F-2012 SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N7389, 2N7390, 2N7389U, 2N7389U5, AND 2N7390U, 2N7390U5, JANTXV, R, AND F AND JANS, R, AND F
DLA MIL-PRF-19500/663 E-2013 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7431, 2N7432, AND 2N7433, JANTXVR, F, G, AND H; AND JANSR, F, G, AND H
DLA MIL-PRF-19500/664 D-2012 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7431U, 2N7432U, AND 2N7433U, JANTXVR, F, G, AND H; AND JANSR, F, G, AND H
DLA MIL-PRF-19500/663 F-2013 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7431, 2N7432, AND 2N7433, JANTXVR, F, G, AND H; AND JANSR, F, G, AND H
DLA MIL-PRF-19500/741 A-2009 SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR DIE, N-CHANNEL AND P-CHANNEL, SILICON, VARIOUS TYPES, JANHC AND JANKC
DLA MIL-PRF-19500/741 A VALID NOTICE 1-2013 Semiconductor Device, Field Effect, Radiation Hardened (Total Dose and Single Event Effects) Transistor Die, N-Channel and PChannel, Silicon, Various Types, JANHC and JANKC
DLA MIL-PRF-19500/615 F-2013 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7382 AND 2N7383, JANTXV M, D, R, AND F AND JANS M, D, R, AND F
DLA MIL-PRF-19500/739-2006 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) QUAD TRANSISTOR, N-CHANNEL AND P-CHANNEL, SILICON, TYPES 2N7518 AND 2N7518U, JANTXVR, F, AND JANSR, F
DLA MIL-PRF-19500/700 A VALID NOTICE 1-2010 Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistor, N-Channel, Silicon, Types 2N7494U5, 2N7495U5, and 2N7496U5, JANTXVR, F, G, and H, and JANSR, F, G, and H
DLA MIL-PRF-19500/606 B-2004 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7291, 2N7293, 2N7295, AND 2N7297, JANTXVM, D, AND R, AND JANSM, D, AND R
DLA MIL-PRF-19500/605 D-2013 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7292, 2N7294, 2N7296, AND 2N7298, JANTXVM, D, R, H AND JANSM, D AND R
DLA MIL-PRF-19500/614 H-2013 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7380 AND 2N7381, JANTXV, M, D, R, F, G, AND H AND JANS, M, D, R, F, G, AND H
DLA MIL-PRF-19500/603 H-2011 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7268, 2N7269, 2N7270, 2N7394, 2N7268U, 2N7269U, 2N7270U, AND 2N7394U, JANTXVR, F, G, H; JANSR, F, G, AND H
DLA MIL-PRF-19500/603 J-2013 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7268, 2N7269, 2N7270, 2N7394, 2N7268U, 2N7269U, 2N7270U, AND 2N7394U, JANTXVR, F, G, H; JANSR, F, G, AND H

British Standards Institution (BSI), effect radiation

BS EN 60544-4:2003 Electrical insulating materials - Determination of the effects of ionizing radiation - Classification system for service in radiation environments
BS EN 60544-1:2013 Electrical insulating materials. Determination of the effects of ionizing radiation. Radiation interaction and dosimetry
BS EN 62396-1:2016 Process management for avionics. Atmospheric radiation effects - Accommodation of atmospheric radiation effects via single event effects within avionics electronic equipment
DD IEC/TS 62396-1:2006 Process management for avionics. Atmospheric radiation effects - Accommodation of atmospheric radiation effects via single event effects within avionics electronic equipment
BS IEC 62396-1:2012 Process management for avionics. Atmospheric radiation effects. Accommodation of atmospheric radiation effects via single event effects within avionics electronic equipment
BS DD IEC/TS 62396-1:2006 Process management for avionics - Atmospheric radiation effects - Accommodation of atmospheric radiation effects via single event effects within avionics electronic equipment
BS IEC 62396-1:2016 Process management for avionics. Atmospheric radiation effects. Accommodation of atmospheric radiation effects via single event effects within avionics electronic equipment
DD IEC/TS 62396-3:2008 Process management for avionics. Atmospheric radiation effects - Optimising system design to accommodate the single event effects (SEE) of atmospheric radiation
DD IEC/PAS 62396-3:2007 Process management for avionics. Atmospheric radiation effects - Optimising system design to accommodate the single event effects (SEE) of atmospheric radiation
PD CEN/TR 17602-60-02:2021 Space product assurance. Techniques for radiation effects mitigation in ASICs and FPGAs handbook

Standard Association of Australia （SAA）, effect radiation

IEC 62396-1:2016 RLV Process management for avionics — Atmospheric radiation effects — Part 1: Accommodation of atmospheric radiation effects via single event effects within avionics electronic equipment

IEC - International Electrotechnical Commission, effect radiation

TS 62396-1-2006 Process management for avionics – Atmospheric radiation effects – Part 1: Accommodation of atmospheric radiation effects via single event effects within avionics electronic equipment (Edition 1.0)
TS 62396-3-2008 Process management for avionics – Atmospheric radiation effects – Part 3: Optimising system design to accommodate the single event effects (SEE) of atmospheric radiation (Edition 1.0)
PAS 62396-3-2007 Process management for avionics – Atmospheric radiation effects – Part 3: Optimising system design to accommodate the Single Event Effects (SEE) of atmospheric radiation (Edition 1.0)

International Electrotechnical Commission (IEC), effect radiation

IEC TS 62396-1:2006 Process management for avionics - Atmospheric radiation effects - Part 1: Accommodation of atmospheric radiation effects via single event effects within avionics electronic equipment
IEC TS 62396-3:2008 Process management for avionics - Atmospheric radiation effects - Part 3: Optimising system design to accommodate the single event effects (SEE) of atmospheric radiation
IEC 60544-4:2003 Electrical insulating materials - Determination of the effects of ionizing radiation - Part 4: Classification system for service in radiation environments

Military Standard of the People's Republic of China-General Armament Department, effect radiation

GJB 9730-2020 Specification for particle radiation effect detectors
GJB 9397-2018 Test method for neutron radiation effects of military electronic components
GJB 9396-2018 Ground simulation test method for space environment radiation effects of charge-coupled devices

中国气象局, effect radiation

QX/T 546-2020 Terminology for space high-energy particle radiation effects

RU-GOST R, effect radiation

GOST 25645.219-1990 Space crew radiation safety during space flight. Model describing the influence of spatial nonuniformity radiation exposure on the generalized radiobiological effect

Korean Agency for Technology and Standards (KATS), effect radiation

KS C IEC 60544-1:2019 Electrical insulating materials ― Determination of the effects of ionizing radiation — Part 1: Radiation interaction and dosimetry
KS C IEC 60544-4-2014(2019) Electrical insulating materials ― Determination of the effects of ionizing radiation — Part 4: Classification system for service in radiation environments

KR-KS, effect radiation

KS C IEC 60544-1-2019 Electrical insulating materials ― Determination of the effects of ionizing radiation — Part 1: Radiation interaction and dosimetry

Illuminating Engineering Society of North America, effect radiation

IESNA HB-9 CHAPTER 5-2000 Nonvisual Effects of Optical Radiation

WRC - Welding Research Council, effect radiation

BULLETIN 87-1963 CRITICAL F ACTORS IN THE INTERPRETATION OF RADIATION EFFECTS ON THE MECHANICAL PROPERTIES OF STRUCTURAL METALS COMMERCIAL IMPLICATIONS OF RADIATION EFFECTS ON REACTOR PRESSURE VESSEL DESIGN@ FABRICATI

Association Francaise de Normalisation, effect radiation

NF C26-290-1*NF EN 60544-1:2014 Electrical insulating materials - Determination of the effects of ionizing radiation - Part 1 : radiation interaction and dosimetry
NF EN 16603-10-12:2016 Ingénierie spatiale - Procédé pour le calcul de rayonnement reçu et ses effets, et une politique de marges de conception

ES-UNE, effect radiation

UNE-CEN/TR 17602-60-02:2021 Space product assurance - Techniques for radiation effects mitigation in ASICs and FPGAs handbook (Endorsed by Asociación Española de Normalización in January of 2022.)

General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China, effect radiation

GB/T 42846-2023 Ground simulation method for space radiation effect of non-metallic materials in space environment

FI-SFS, effect radiation

SFS 5519-1989