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radiation effect baidu

radiation effect baidu, Total:251 items.

In the international standard classification, radiation effect baidu involves: Geology. Meteorology. Hydrology, Thermodynamics and temperature measurements, Insulating materials, Company organization and management, Aerospace electric equipment and systems, Electronic components in general, Radiation measurements, On-board equipment and instruments, Radiation protection, Aircraft and space vehicles in general, Space systems and operations, Semiconductor devices, Materials for aerospace construction, Optics and optical measurements, Integrated circuits. Microelectronics, Earth-moving machinery, Valves, Environmental testing, Radiocommunications, Nuclear energy engineering, Railway engineering in general, Electrical engineering in general, Electric traction equipment, Edible oils and fats. Oilseeds, Rubber and plastics products, Applications of information technology.

Illuminating Engineering Society of North America, radiation effect baidu

IESNA HB-9 CHAPTER 5-2000 Nonvisual Effects of Optical Radiation

ASHRAE - American Society of Heating@ Refrigerating and Air-Conditioning Engineers@ Inc., radiation effect baidu

ASHRAE AN-04-6-2-2004 Method for Calculating the Effective Longwave Radiative Properties of a Venetian Blind Layer
ASHRAE AN-04-6-1-2004 Heat Transfer Analysis of a Between-Panes Venetian Blind Using Effective Longwave Radiative Properties
ASHRAE 4247-1999 Effect of a Radiant Barrier on the Cooling Load of a Residential Application in a Hot and Arid Region: Attic Duct Effect

Military Standard of the People's Republic of China-General Armament Department, radiation effect baidu

GJB 9730-2020 Specification for particle radiation effect detectors
GJB 9397-2018 Test method for neutron radiation effects of military electronic components
GJB 8670.6-2015 Test methods for special bomb effects Part 6: Determination of flame temperature of arson bombs Thermal radiation method
GJB 5214.19-2003 Special bomb effect test method Part 19: Bandpass method for measuring infrared radiation intensity of infrared jamming bombs
GJB 9396-2018 Ground simulation test method for space environment radiation effects of charge-coupled devices
GJB 8706.17-2015 Special aerial bomb effect test method Part 17: Aerial incendiary bomb fire flame combustion temperature thermal radiation method

中国气象局, radiation effect baidu

QX/T 546-2020 Terminology for space high-energy particle radiation effects

British Standards Institution (BSI), radiation effect baidu

BS EN 62396-1:2016 Process management for avionics. Atmospheric radiation effects - Accommodation of atmospheric radiation effects via single event effects within avionics electronic equipment
DD IEC/TS 62396-1:2006 Process management for avionics. Atmospheric radiation effects - Accommodation of atmospheric radiation effects via single event effects within avionics electronic equipment
DD IEC/TS 62396-3:2008 Process management for avionics. Atmospheric radiation effects - Optimising system design to accommodate the single event effects (SEE) of atmospheric radiation
DD IEC/PAS 62396-3:2007 Process management for avionics. Atmospheric radiation effects - Optimising system design to accommodate the single event effects (SEE) of atmospheric radiation
BS EN 60544-1:2013 Electrical insulating materials. Determination of the effects of ionizing radiation. Radiation interaction and dosimetry
BS IEC 62396-1:2012 Process management for avionics. Atmospheric radiation effects. Accommodation of atmospheric radiation effects via single event effects within avionics electronic equipment
BS DD IEC/TS 62396-1:2006 Process management for avionics - Atmospheric radiation effects - Accommodation of atmospheric radiation effects via single event effects within avionics electronic equipment
BS IEC 62396-1:2016 Process management for avionics. Atmospheric radiation effects. Accommodation of atmospheric radiation effects via single event effects within avionics electronic equipment
BS EN 60544-4:2003 Electrical insulating materials - Determination of the effects of ionizing radiation - Classification system for service in radiation environments
PD CEN/TR 17602-60-02:2021 Space product assurance. Techniques for radiation effects mitigation in ASICs and FPGAs handbook
DD IEC/TS 62396-2:2008 Process management for avionics. Atmospheric radiation effects - Guidelines for single event effects testing for avionics systems
DD IEC/PAS 62396-2:2007 Process management for avionics. Atmospheric radiation effects - Guidelines for single event effects testing for avionics systems
BS IEC 62396-3:2013 Process management for avionics. Atmospheric radiation effects. System design optimization to accommodate the single event effects (SEE) of atmospheric radiation
BS IEC 62396-2:2017 Tracked Changes. Process management for avionics. Atmospheric radiation effects. Guidelines for single event effects testing for avionics systems
DD IEC/PAS 62396-5:2007 Process management for avionics. Atmospheric radiation effects - Guidelines for assessing thermal neutron fluxes and effects in avionics systems
DD IEC/TS 62396-5:2008 Process management for avionics. Atmospheric radiation effects - Guidelines for assessing thermal neutron fluxes and effects in avionics systems
BS DD IEC/TS 62396-4:2009 Process management for avionics. Atmospheric radiation effects. Guidelines for designing with high voltage aircraft electronics and potential single event effects
DD IEC/TS 62396-4:2008 Process management for avionics. Atmospheric radiation effects - Guidelines for designing with high voltage aircraft electronics and potential single event effects
DD IEC/PAS 62396-4:2007 Process management for avionics. Atmospheric radiation effects - Guidelines for designing with high voltage aircraft electronics and potential single event effects
PD IEC/TR 62396-7:2017 Process management for avionics. Atmospheric radiation effects. Management of single event effects (SEE) analysis process in avionics design
BS ISO 6980-3:2006 Nuclear energy - Reference beta-particle radiation - Calibration of area and personal dosemeters and the determination of their response as a function of beta radiation energy and angle of incidence
PD IEC TR 62396-8:2020 Process management for avionics. Atmospheric radiation effects. Proton, electron, pion, muon, alpha-ray fluxes and single event effects in avionics electronic equipment. Awareness guidelines
BS EN 50121-5:2017+A1:2019 Railway applications. Electromagnetic compatibility. Emission and immunity of fixed power supply installations and apparatus
BS IEC 62396-2:2012 Process management for avionics. Atmospheric radiation effects. Guidelines for single event effects testing for avionics systems
BS DD IEC/TS 62396-2:2008 Process management for avionics - Atmospheric radiation effects - Guidelines for single event effects testing for avionics systems
BS ISO 10540-3:2003 Animal and vegetable fats and oils - Determination of phosphorus content - Method using inductively coupled plasma (ICP) optical emission spectroscopy
BS IEC 62396-4:2013 Process management for avionics. Atmospheric radiation effects. Design of high voltage aircraft electronics managing potential single event effects
BS IEC 62396-5:2014 Process management for avionics. Atmospheric radiation effects. Assessment of thermal neutron fluxes and single event effects in avionics systems
BS DD IEC/TS 62396-5:2008 Process management for avionics - Atmospheric radiation effects - Guidelines for assessing thermal neutron fluxes and effects in avionics systems

Association of German Mechanical Engineers, radiation effect baidu

VDI/VDE 3511 Blatt 4.5-2015 Temperature measurement in industry - Radiation thermometry - Practical application of radiation thermometers

Standard Association of Australia （SAA）, radiation effect baidu

IEC 62396-1:2016 RLV Process management for avionics — Atmospheric radiation effects — Part 1: Accommodation of atmospheric radiation effects via single event effects within avionics electronic equipment

CU-NC, radiation effect baidu

NC 15-71-1987 Thermotechnics. Temperature Rate Values by Solar Radiation

IEC - International Electrotechnical Commission, radiation effect baidu

TS 62396-1-2006 Process management for avionics – Atmospheric radiation effects – Part 1: Accommodation of atmospheric radiation effects via single event effects within avionics electronic equipment (Edition 1.0)
TS 62396-3-2008 Process management for avionics – Atmospheric radiation effects – Part 3: Optimising system design to accommodate the single event effects (SEE) of atmospheric radiation (Edition 1.0)
PAS 62396-3-2007 Process management for avionics – Atmospheric radiation effects – Part 3: Optimising system design to accommodate the Single Event Effects (SEE) of atmospheric radiation (Edition 1.0)
TS 62396-2-2008 Process management for avionics – Atmospheric radiation effects – Part 2: Guidelines for single event effects testing for avionics systems (Edition 1.0)
PAS 62396-2-2007 Process management for avionics – Atmospheric radiation effects – Part 2: Guidelines for single event effects testing for avionics systems (Edition 1.0)
PAS 62396-5-2007 Process management for avionics – Atmospheric radiation effects – Part 5: Guidelines for assessing thermal neutron fluxes and effects in avionics systems (Edition 1.0)
TS 62396-5-2008 Process management for avionics – Atmospheric radiation effects – Part 5: Guidelines for assessing thermal neutron fluxes and effects in avionics systems (Edition 1.0)
TS 62396-4-2008 Process management for avionics – Atmospheric radiation effects – Part 4: Guidelines for designing with high voltage aircraft electronics and potential single event effects (Edition 1.0)
PAS 62396-4-2007 Process management for avionics – Atmospheric radiation effects – Part 4: Guidelines for designing with high voltage aircraft electronics and potential single event effects (Edition 1.0)
IEC 62236-5:2018 Railway applications – Electromagnetic compatibility – Part 5: Emission and immunity of fixed power supply installations and apparatus (Edition 3.0)

WRC - Welding Research Council, radiation effect baidu

BULLETIN 87-1963 CRITICAL F ACTORS IN THE INTERPRETATION OF RADIATION EFFECTS ON THE MECHANICAL PROPERTIES OF STRUCTURAL METALS COMMERCIAL IMPLICATIONS OF RADIATION EFFECTS ON REACTOR PRESSURE VESSEL DESIGN@ FABRICATI

International Electrotechnical Commission (IEC), radiation effect baidu

IEC TS 62396-3:2008 Process management for avionics - Atmospheric radiation effects - Part 3: Optimising system design to accommodate the single event effects (SEE) of atmospheric radiation
IEC TS 62396-1:2006 Process management for avionics - Atmospheric radiation effects - Part 1: Accommodation of atmospheric radiation effects via single event effects within avionics electronic equipment
IEC 60544-4:2003 Electrical insulating materials - Determination of the effects of ionizing radiation - Part 4: Classification system for service in radiation environments
IEC 60544-4:1985 Guide for determining the effects of ionizing radiation on insulating materials. Part 4 : Classification system for service in radiation environments
IEC 60544-2:2012 Electrical insulating materials - Determination of the effects of ionizing radiation on insulating materials - Part 2: Procedures for irradiation and test
IEC TS 62396-2:2008 Process management for avionics - Atmosperic radiation effects - Part 2: Guidelines for single event effects testing for avionics systems
IEC 62396-2:2017 Process management for avionics - Atmospheric radiation effects - Part 2: Guidelines for single event effects testing for avionics systems
IEC 62396-3:2013 Process management for avionics - Atmospheric radiation effects - Part 3: System design optimization to accommodate the single event effects (SEE) of atmospheric radiation
IEC TS 62396-5:2008 Process management for avionics - Atmospheric radiation effects - Part 5: Guidelines for assessing thermal neutron fluxes and effects in avionics systems
IEC TR 62396-7:2017 Process management for avionics - Atmospheric radiation effects - Part 7: Management of single event effects (SEE) analysis process in avionics design
IEC 62396-1:2012 Process management for avionics - Atmospheric radioation effects - Part 1: Accommodation of atmospheric radiation effects via single event effects within avionics electronic equipment
IEC 62396-1:2016 Process management for avionics - Atmospheric radiation effects - Part 1: Accommodation of atmospheric radiation effects via single event effects within avionics electronic equipment
IEC TR 62396-8:2020 Process management for avionics - Atmospheric radiation effects - Part 8: Proton, electron, pion, muon, alpha-ray fluxes and single event effects in avionics electronic equipment - Awareness guideline
IEC 61578:1997 Radiation protection instrumentation - Calibration and verification of the effectiveness of radon compensation for alpha and/or beta aerosol measuring instruments - Test methods
IEC 60951-5:1994 Nuclear power plants; radiation monitoring equipment for accident and post-accident conditions; part 5: radioactivity of air in light water nuclear power plants
IEC 62396-4:2013 Process management for avionics - Atmospheric radiatio effects - Part 4: Design of high voltage aircraft electronics managing potential single event effects

FI-SFS, radiation effect baidu

SFS 5519-1989

Association Francaise de Normalisation, radiation effect baidu

NF C26-290-1*NF EN 60544-1:2014 Electrical insulating materials - Determination of the effects of ionizing radiation - Part 1 : radiation interaction and dosimetry
NF EN 16603-10-12:2016 Ingénierie spatiale - Procédé pour le calcul de rayonnement reçu et ses effets, et une politique de marges de conception
NF C26-290-2*NF EN 60544-2:2013 Electrical insulating materials - Determination of the effects of ionizing radiation on insulating materials - Part 2 : procedures for irradiation and test
NF F07-121-4*NF EN 50121-4:2017 Railway applications - Electromagnetic compatibility - Part 4 : emission and immunity of the signalling and telecommunications apparatus
NF F07-121-5*NF EN 50121-5:2017 Railway applications - Electromagnetic compatibility - Part 5 : emission and immunity of fixed power supply installations and apparatus
NF F07-121-5/A1*NF EN 50121-5/A1:2019 Railway applications - Electromagnetic compatibility - Part 5 : emission and immunity of fixed power supply installations and apparatus
NF EN 50121-5/A1:2019 Applications ferroviaires - Compatibilité électromagnétique - Partie 5 : émission et immunité des installations fixes d'alimentation de puissance et des équipements associés
NF EN 50121-5:2017 Applications ferroviaires - Compatibilité électromagnétique - Partie 5 : émission et immunité des installations fixes d'alimentation de puissance et des équipements associés

Korean Agency for Technology and Standards (KATS), radiation effect baidu

KS C IEC 60544-1:2019 Electrical insulating materials ― Determination of the effects of ionizing radiation — Part 1: Radiation interaction and dosimetry
KS C IEC 60544-4-2014(2019) Electrical insulating materials ― Determination of the effects of ionizing radiation — Part 4: Classification system for service in radiation environments

KR-KS, radiation effect baidu

KS C IEC 60544-1-2019 Electrical insulating materials ― Determination of the effects of ionizing radiation — Part 1: Radiation interaction and dosimetry
KS A ISO 6980-3-2016 Nuclear energy — Reference beta-particle radiation — Part 3: Calibration of area and personal dosemeters and the determination of their response as a function of beta radiation energy and angle of inc

RU-GOST R, radiation effect baidu

GOST 25645.214-1985 Space crew radiation safety during space flight. Model of generalized radiobiological effect
GOST 25645.219-1990 Space crew radiation safety during space flight. Model describing the influence of spatial nonuniformity radiation exposure on the generalized radiobiological effect
GOST 8.332-2013 State system for ensuring the uniformity of measurements. Light measurements. Values of relative spectral luminous efficiency function of monochromatic radiation for photopic vision

American Society for Testing and Materials (ASTM), radiation effect baidu

ASTM F1892-12(2018) Standard Guide for Ionizing Radiation (Total Dose) Effects Testing of Semiconductor Devices
ASTM F1892-06 Standard Guide for Ionizing Radiation (Total Dose) Effects Testing of Semiconductor Devices
ASTM F1892-04 Standard Guide for Ionizing Radiation (Total Dose) Effects Testing of Semiconductor Devices
ASTM F1892-98 Standard Guide for Ionizing Radiation (Total Dose) Effects Testing of Semiconductor Devices
ASTM F1892-12 Standard Guide for Ionizing Radiation (Total Dose) Effects Testing of Semiconductor Devices
ASTM F1467-99(2005)e1 Standard Guide for Use of an X-Ray Tester ([approximate]10 keV Photons) in Ionizing Radiation Effects Testing of Semiconductor Devices and Microcircuits
ASTM F1467-99 Standard Guide for Use of an X-Ray Tester ([approximate]10 keV Photons) in Ionizing Radiation Effects Testing of Semiconductor Devices and Microcircuits
ASTM F1467-99(2005) Standard Guide for Use of an X-Ray Tester ([approximate]10 keV Photons) in Ionizing Radiation Effects Testing of Semiconductor Devices and Microcircuits
ASTM F1467-11 Standard Guide for Use of an X-Ray Tester (x2248;10 keV Photons) in Ionizing Radiation Effects Testing of Semiconductor Devices and Microcircuits
ASTM E900-15 Standard Guide for Predicting Radiation-Induced Transition Temperature Shift in Reactor Vessel Materials
ASTM E1250-88(2005) Standard Test Method for Application of Ionization Chambers to Assess the Low Energy Gamma Component of Cobalt-60 Irradiators Used in Radiation-Hardness Testing of Silicon Electronic Devices
ASTM E1250-88(2000) Standard Test Method for Application of Ionization Chambers to Assess the Low Energy Gamma Component of Cobalt-60 Irradiators Used in Radiation-Hardness Testing of Silicon Electronic Devices
ASTM E1250-15 Standard Test Method for Application of Ionization Chambers to Assess the Low Energy Gamma Component of Cobalt-60 Irradiators Used in Radiation-Hardness Testing of Silicon Electronic Devices
ASTM E900-21 Standard Guide for Predicting Radiation-Induced Transition Temperature Shift in Reactor Vessel Materials
ASTM E1250-15(2020) Standard Test Method for Application of Ionization Chambers to Assess the Low Energy Gamma Component of Cobalt-60 Irradiators Used in Radiation-Hardness Testing of Silicon Electronic Devices
ASTM E1250-10 Standard Test Method for Application of Ionization Chambers to Assess the Low Energy Gamma Component of Cobalt-60 Irradiators Used in Radiation-Hardness Testing of Silicon Electronic Devices
ASTM E900-02 Standard Guide for Predicting Radiation-Induced Transition Temperature Shift in Reactor Vessel Materials, E706 (IIF)
ASTM E900-02(2007) Standard Guide for Predicting Radiation-Induced Transition Temperature Shift in Reactor Vessel Materials, E706 (IIF)
ASTM E722-14 Standard Practice for Characterizing Neutron Fluence Spectra in Terms of an Equivalent Monoenergetic Neutron Fluence for Radiation-Hardness Testing of Electronics
ASTM E900-15e2 Standard Guide for Predicting Radiation-Induced Transition Temperature Shift in Reactor Vessel Materials
ASTM E900-15e1 Standard Guide for Predicting Radiation-Induced Transition Temperature Shift in Reactor Vessel Materials
ASTM E722-19 Standard Practice for Characterizing Neutron Fluence Spectra in Terms of an Equivalent Monoenergetic Neutron Fluence for Radiation-Hardness Testing of Electronics
ASTM E722-94(2002) Standard Practice for Characterizing Neutron Energy Fluence Spectra in Terms of an Equivalent Monoenergetic Neutron Fluence for Radiation-Hardness Testing of Electronics
ASTM E722-04e2 Standard Practice for Characterizing Neutron Energy Fluence Spectra in Terms of an Equivalent Monoenergetic Neutron Fluence for Radiation-Hardness Testing of Electronics
ASTM E722-09 Standard Practice for Characterizing Neutron Fluence Spectra in Terms of an Equivalent Monoenergetic Neutron Fluence for Radiation-Hardness Testing of Electronics
ASTM E720-94 Standard Guide for Selection and Use of Neutron-Activation Foils for Determining Neutron Spectra Employed in Radiation-Hardness Testing of Electronics
ASTM E720-11 Standard Guide for Selection and Use of Neutron Sensors for Determining Neutron Spectra Employed in Radiation-Hardness Testing of Electronics

ES-UNE, radiation effect baidu

UNE-CEN/TR 17602-60-02:2021 Space product assurance - Techniques for radiation effects mitigation in ASICs and FPGAs handbook (Endorsed by Asociación Española de Normalización in January of 2022.)
UNE-EN 50121-4:2017 Railway applications - Electromagnetic compatibility - Part 4: Emission and immunity of the signalling and telecommunications apparatus
UNE-EN 50121-4:2017/A1:2019 Railway applications - Electromagnetic compatibility - Part 4: Emission and immunity of the signalling and telecommunications apparatus
UNE-EN 50121-5:2018/A1:2019 Railway applications - Electromagnetic compatibility - Part 5: Emission and immunity of fixed power supply installations and apparatus
UNE-EN 50121-5:2018 Railway applications - Electromagnetic compatibility - Part 5: Emission and immunity of fixed power supply installations and apparatus

General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China, radiation effect baidu

GB/T 10263.5-1988 Basic enviromental testing procedures for radiation detectors--Effective testing of exposure to light
GB/T 42846-2023 Ground simulation method for space radiation effect of non-metallic materials in space environment
GB/T 42242-2022 Space environment—Evaluation of radiation effects on Commercial-Off-The-Shelf (COTS) parts for use on low-orbit satellite

中华人民共和国国家质量监督检验检疫总局、中国国家标准化管理委员会, radiation effect baidu

GB/T 34955-2017 Atmospheric radiation effects—Guidelines for single event effects testing for avionics systems
GB/T 34956-2017 Atmospheric radiation effects—Accommodation of atmospheric radiation effects via single event effects within avionics electronic equipment

European Committee for Standardization (CEN), radiation effect baidu

CEN/TR 16791:2017 Quantifying irradiance for eye-mediated non-image-forming effects of light in humans
PD CEN/TR 16791:2017 Quantifying irradiance for eye-mediated non-imageforming effects of light in humans

International Commission on Illumination (CIE), radiation effect baidu

CIE 202-2011 SPECTRAL RESPONSIVITY MEASUREMENT OF DETECTORS, RADIOMETERS AND PHOTOMETERS

Defense Logistics Agency, radiation effect baidu

DLA MIL-PRF-19500/634 C-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, N-CHANNEL SILICON, TYPES 2N7405, 2N7406, 2N7407, AND 2N7408, JANSD AND JANSR
DLA MIL-PRF-19500/705 B-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7488T3, 2N7489T3, AND 2N7490T3, JANTXVR AND JANSR
DLA MIL-PRF-19500/685 D (1)-2009 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7475T1, 2N7476T1, AND 2N7477T1 (TOTAL DOSE AND SINGLE EVENT EFFECTS), JANTXVR AND JANSR
DLA MIL-PRF-19500/685 E-2010 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7475T1, 2N7476T1, AND 2N7477T1 (TOTAL DOSE AND SINGLE EVENT EFFECTS), JANTXVR AND JANSR
DLA MIL-PRF-19500/685 F-2013 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7475T1, 2N7476T1, AND 2N7477T1 (TOTAL DOSE AND SINGLE EVENT EFFECTS), JANTXVR AND JANSR
DLA MIL-PRF-19500/704 B-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7485U3, 2N7486U3, AND 2N7487U3, JANTXVR AND JANSR
DLA MIL-PRF-19500/684 D (1)-2009 SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT, SILICON, N-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), TYPES 2N7472U2, 2N7473U2, AND 2N7474U2, JANTXVR AND JANSR
DLA MIL-PRF-19500/633 C-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, P-CHANNEL SILICON, TYPES 2N7403 AND 2N7404, JANSD AND JANSR
DLA MIL-PRF-19500/658 VALID NOTICE 2-2011 Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistor, P-Channel Silicon Type 2N7438, and 2N7439 JANSD and JANSR
DLA MIL-PRF-19500/706 A VALID NOTICE 1-2010 Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistor, N-Channel, Silicon Types 2N7497T2, 2N7498T2, and 2N7499T2, JANTXVR and JANSR
DLA MIL-PRF-19500/605 C-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7292, 2N7294, 2N7296, AND 2N7298, JANTXVM, D, R, H AND JANSM, D AND R
DLA MIL-PRF-19500/704 B (1)-2010 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7485U3, 2N7486U3, AND 2N7487U3, JANTXVR AND JANSR
DLA MIL-PRF-19500/752-2010 SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), LOGIC-LEVEL SILICON, TYPE 2N7608T2, JANTXVR, JANTXVF, JANSR, AND JANSF
DLA MIL-PRF-19500/704 C-2010 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7485U3, 2N7486U3, AND 2N7487U3, JANTXVR AND JANSR
DLA MIL-PRF-19500/705 C-2011 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7488T3, 2N7489T3, AND 2N7490T3, JANTXVR AND JANSR
DLA MIL-PRF-19500/749-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), SILICON, TYPES 2N7506U8 AND 2N7506U8C, JANTXVR, JANTXVF, JANSR AND JANSF
DLA SMD-5962-98636 REV C-2003 MICROCIRCUIT, LINEAR, RADIATION HARDENED JFET-INPUT OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
DLA SMD-5962-00521 REV E-2008 MICROCIRCUIT, DIGITAL-LINEAR, RADIATION HARDENED, COMPLEMENTARY SWITCH FET DRIVER, MONOLITHIC SILICON
DLA SMD-5962-00521 REV D-2003 MICROCIRCUIT, DIGITAL-LINEAR, RADIATION HARDENED, COMPLEMENTARY SWITCH FET DRIVER, MONOLITHIC SILICON
DLA MIL-PRF-19500/633 D-2013 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, P-CHANNEL SILICON, TYPES 2N7403 AND 2N7404, JANSD AND JANSR
DLA MIL-PRF-19500/683 C-2008 SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT, N-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TYPE 2N7467U2, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
DLA MIL-PRF-19500/747-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), SILICON, TYPE 2N7504T2, JANTXVR, JANTXVF, JANTXVG, JANTXVH, JANSF, JANSG, JANSR, AND JANSH
DLA MIL-PRF-19500/744-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), LOGIC-LEVEL SILICON, TYPES 2N7616UB, 2N7616UBC, JANTXVR, JANTXVF, JANSR, AND JANSF
DLA MIL-PRF-19500/687 B-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL SILICON, TYPES 2N7509, 2N7510, AND 2N7511, JANTXVD, R AND JANSD, R
DLA MIL-PRF-19500/689 VALID NOTICE 2-2011 Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistor, N-Channel Silicon Types 2N7512, 2N7513, and 2N7514 JANTXVD, R and JANSD, R
DLA MIL-PRF-19500/687 B VALID NOTICE 1-2013 Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistor, N-Channel Silicon, Types 2N7509, 2N7510, and 2N7511, JANTXVD, R and JANSD, R
DLA MIL-PRF-19500/745-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), LOGIC-LEVEL SILICON, TYPES 2N7626UB, 2N7626UBC, JANTXVR, JANTXVF, JANSR, AND JANSF
DLA MIL-PRF-19500/745 A-2009 SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), LOGIC-LEVEL SILICON, TYPES 2N7626UB, 2N7626UBC, JANTXVR, JANTXVF, JANSR, AND JANSF
DLA MIL-PRF-19500/683 C (1)-2009 SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT, N-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TYPE 2N7467U2, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
DLA MIL-PRF-19500/753-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7580T1, 2N7582T1, 2N7584T1, AND 2N7586T1, JANTXVR, JANTXVF, JANSR, AND JANSF
DLA MIL-PRF-19500/755-2010 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7588T3, 2N7590T3, 2N7592T3 AND 2N7594T3, JANTXVR, JANTXVF, JANSR AND JANSF
DLA MIL-PRF-19500/733 B-2010 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7523T1, 2N7523U2, 2N7524T1, AND 2N7524U2, JANTXVR, F AND JANSR, F
DLA MIL-PRF-19500/713 B-2010 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7549T1, 2N7549U2, 2N7550T1, AND 2N7550U2, JANTXVR, F AND JANSR, F
DLA MIL-PRF-19500/753 B-2013 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7580T1, 2N7582T1, 2N7584T1, AND 2N7586T1, JANTXVR, JANTXVF, JANSR, AND JANSF
DLA MIL-PRF-19500/741 A-2009 SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR DIE, N-CHANNEL AND P-CHANNEL, SILICON, VARIOUS TYPES, JANHC AND JANKC
DLA MIL-PRF-19500/757 A-2011 SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), LOGIC-LEVEL SILICON, TYPES 2N7624U3 AND 2N7625T3, JANTXVR, JANTXVF, JANSR, AND JANSF
DLA MIL-PRF-19500/741 A VALID NOTICE 1-2013 Semiconductor Device, Field Effect, Radiation Hardened (Total Dose and Single Event Effects) Transistor Die, N-Channel and PChannel, Silicon, Various Types, JANHC and JANKC
DLA MIL-PRF-19500/675 E-2013 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7463T2, 2N7464T2, 2N7463U5 AND 2N7464U5 JANTXVR AND JANSR
DLA MIL-PRF-19500/634 D-2013 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, N-CHANNEL SILICON, TYPES 2N7405, 2N7406, 2N7407, AND 2N7408, JANSD AND JANSR
DLA MIL-PRF-19500/732 A-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7519U3, 2N7519U3C, 2N7519T3, 2N7520U3, 2N7520U3C, AND 2N7520T3, JANTXVR, F AND JANSR, F
DLA MIL-PRF-19500/743-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7503U8 AND 2N7503U8C, JANTXVR, F AND G AND JANSR, F AND G
DLA MIL-PRF-19500/746-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7587U3, 2N7587U3C, 2N7589U3, 2N7589U3C, 2N7591U3, 2N7591U3C, 2N7593U3, AND 2N7593U3C, JANTXVR, JANTXVF, JANSR, AND JANSF
DLA MIL-PRF-19500/697 C (1)-2009 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPE 2N7478T1, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
DLA MIL-PRF-19500/758-2010 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7609U8 AND 2N7609U8C, JANTXVR, F AND G AND JANSR, F AND G
DLA MIL-PRF-19500/697 D-2011 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPE 2N7478T1, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
DLA MIL-PRF-19500/746 B-2011 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7587U3, 2N7587U3C, 2N7589U3, 2N7589U3C, 2N7591U3, 2N7591U3C, 2N7593U3, AND 2N7593U3C, JANTXVR, JANTXVF, JANSR, AND JANSF
DLA MIL-PRF-19500/655 E-2012 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, P-CHANNEL SILICON, TYPES 2N7424U, 2N7425U, AND 2N7426U, JANTXVR AND F AND JANSR AND F
DLA MIL-PRF-19500/697 E-2013 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPE 2N7478T1, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
DLA MIL-PRF-19500/657 B-2011 SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED, TRANSISTOR DIE, N AND P-CHANNEL, SILICON VARIOUS TYPES JANHC AND JANKC
DLA MIL-PRF-19500/660 D-2013 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, P-CHANNEL SILICON, TYPES 2N7424, 2N7425, AND 2N7426, JANTXVR, JANTXVF, JANSR, AND JANSF
DLA MIL-PRF-19500/660 E-2013 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, P-CHANNEL SILICON, TYPES 2N7424, 2N7425, AND 2N7426, JANTXVR, JANTXVF, JANSR, AND JANSF
DLA MIL-PRF-19500/687 C-2013 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, N-CHANNEL SILICON, TYPES 2N7509, 2N7510, AND 2N7511, JANTXVD, R AND JANSD, R
DLA MIL-PRF-19500/739-2006 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) QUAD TRANSISTOR, N-CHANNEL AND P-CHANNEL, SILICON, TYPES 2N7518 AND 2N7518U, JANTXVR, F, AND JANSR, F
DLA MIL-PRF-19500/743 A-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7503U8 AND 2N7503U8C, JANTXVR, F, G AND H AND JANSR, F, G AND H
DLA MIL-PRF-19500/673 A (1)-2009 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7468U2 AND 2N7469U2 JANTXVR, F, G AND H AND JANSR, F, G AND H
DLA MIL-PRF-19500/698 D-2010 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7470T1 AND 2N7471T1, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
DLA MIL-PRF-19500/759 REV A-2012 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) DUAL TRANSISTOR, N-CHANNEL AND P-CHANNEL, LOGIC-LEVEL SILICON TYPES 2N7632UD, JANTXVR, F, AND JANSR, F
DLA MIL-PRF-19500/698 E-2013 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7470T1 AND 2N7471T1, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
DLA MIL-PRF-19500/700 A VALID NOTICE 1-2010 Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistor, N-Channel, Silicon, Types 2N7494U5, 2N7495U5, and 2N7496U5, JANTXVR, F, G, and H, and JANSR, F, G, and H
DLA MIL-PRF-19500/676 E-2013 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7465T3 AND 2N7466T3 AND U3 SUFFIXES, JANTXVR AND JANSR
DLA MIL-PRF-19500/701 A (1)-2009 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7491T2, 2N7492T2, AND 2N7493T2, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
DLA MIL-PRF-19500/702 B (1)-2010 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7482T3, 2N7483T3, AND 2N7484T3, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
DLA MIL-PRF-19500/702 C-2010 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7482T3, 2N7483T3, AND 2N7484T3, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
DLA MIL-PRF-19500/703 B-2010 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7479U3, 2N7480U3, AND 2N7481U3, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
DLA MIL-PRF-19500/701 B-2011 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7491T2, 2N7492T2, AND 2N7493T2, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
DLA MIL-PRF-19500/700 B-2011 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7494U5, 2N7495U5, AND 2N7496U5, JANTXVR, F, G, AND H, AND JANSR, F, G, AND H
DLA MIL-PRF-19500/740 (1)-2012 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) QUAD TRANSISTOR, N-CHANNEL AND P-CHANNEL, SILICON TYPES 2N7521U, 2N7522U, 2N7525, AND 2N7526, JANTXVR AND F AND JANSR AND F
DLA MIL-PRF-19500/739 A-2013 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED QUAD TRANSISTOR, N-CHANNEL AND P-CHANNEL, SILICON, TYPES 2N7518 AND 2N7518U, JANTXVR, F, AND JANSR, F
DLA MIL-PRF-19500/744 A-2010 SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), LOGIC-LEVEL SILICON, TYPES 2N7616UB, 2N7616UBC, 2N7616UBN, 2N7616UBCN, JANTXVR, JANTXVF, JANSR, AND JANSF
DLA MIL-PRF-19500/614 G-2012 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7380 AND 2N7381, JANTXV, M, D, R, F, G, AND H AND JANS, M, D, R, F, G, AND H
DLA MIL-PRF-19500/744 C-2012 SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), LOGIC-LEVEL SILICON, TYPES 2N7616UB, 2N7616UBC, 2N7616UBN, 2N7616UBCN, JANTXVR, JANTXVF, JANSR, AND JANSF
DLA MIL-PRF-19500/745 B-2010 SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), LOGIC-LEVEL SILICON, TYPES 2N7626UB, 2N7626UBC, 2N7626UBN, 2N7626UBCN, JANTXVR, JANTXVF, JANSR, AND JANSF
DLA MIL-PRF-19500/745 C-2011 SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), LOGIC-LEVEL SILICON, TYPES 2N7626UB, 2N7626UBC, 2N7626UBN, 2N7626UBCN, JANTXVR, JANTXVF, JANSR, AND JANSF
DLA MIL-PRF-19500/745 D-2012 SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), LOGIC-LEVEL SILICON, TYPES 2N7626UB, 2N7626UBC, 2N7626UBN, 2N7626UBCN, JANTXVR, JANTXVF, JANSR, AND JANSF
DLA MIL-PRF-19500/662 E-2013 SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT RADIATION HARDENED P-CHANNEL, SILICON, TYPES 2N7422, 2N7422U, 2N7423, AND 2N7423U, JANTXVR AND F AND JANSR AND F
DLA MIL-PRF-19500/662 F-2013 SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT RADIATION HARDENED P-CHANNEL, SILICON, TYPES 2N7422, 2N7422U, 2N7423, AND 2N7423U, JANTXVR AND F AND JANSR AND F
DLA MIL-PRF-19500/630 F-2012 SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N7389, 2N7390, 2N7389U, 2N7389U5, AND 2N7390U, 2N7390U5, JANTXV, R, AND F AND JANS, R, AND F
DLA MIL-PRF-19500/663 E-2013 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7431, 2N7432, AND 2N7433, JANTXVR, F, G, AND H; AND JANSR, F, G, AND H
DLA MIL-PRF-19500/664 D-2012 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7431U, 2N7432U, AND 2N7433U, JANTXVR, F, G, AND H; AND JANSR, F, G, AND H
DLA MIL-PRF-19500/663 F-2013 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7431, 2N7432, AND 2N7433, JANTXVR, F, G, AND H; AND JANSR, F, G, AND H
DLA MIL-PRF-19500/615 F-2013 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7382 AND 2N7383, JANTXV M, D, R, AND F AND JANS M, D, R, AND F
DLA MIL-PRF-19500/452 H-2008 SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW LEVEL VOLTAGE-REFERENCE, TEMPERATURE COMPENSATED, TYPES 1N4565A-1 THROUGH 1N4584A-1, AND 1N4565AUR-1 THROUGH 1N4584AUR-1, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC, RADIATION HARDENED (TOTAL DOSE ONLY) TYPES JAN
DLA MIL-PRF-19500/606 B-2004 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7291, 2N7293, 2N7295, AND 2N7297, JANTXVM, D, AND R, AND JANSM, D, AND R
DLA MIL-PRF-19500/662 C-2008 SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY), P-CHANNEL, SILICON, TYPES 2N7422, 2N7422U, 2N7423, AND 2N7423U, JANTXVR AND F AND JANSR AND F
DLA MIL-PRF-19500/605 D-2013 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7292, 2N7294, 2N7296, AND 2N7298, JANTXVM, D, R, H AND JANSM, D AND R

(U.S.) Joint Electron Device Engineering Council Soild State Technology Association, radiation effect baidu

JEDEC JESD57-1996 Test Procedures for the Measurement of Single-Event Effects in Semiconductor Devices from Heavy Ion Irradiation

Japanese Industrial Standards Committee (JISC), radiation effect baidu

JIS A 8330-6:2006 Earth-moving machinery -- Operator enclosure environment -- Part 6: Determination of effect of solar heating on operator enclosure

International Organization for Standardization (ISO), radiation effect baidu

ISO 10263-6:1994 Earth-moving machinery - Operator enclosure environment - Part 6: Determination of effect of solar heating on operator enclosure
ISO 21980:2020 Space systems — Evaluation of radiation effects on Commercial-Off-The-Shelf (COTS) parts for use on low-orbit satellite

Military Standard of the People's Republic of China-Commission of Science,Technology and Industry for National Defence, radiation effect baidu

GJB 6238.7-2008 Test method of effect for special aerial bomb. Part 7: Infrared radiation intensity of target flare of aerial target bomb. Band pass method
GJB 6238.17-2008 Test method of effect for special aerial bomb. Part 17: Flame burning time for incendiary unit of aerial incendiary bomb. Thermoradiation method
GJB 6238.8-2008 Test method fo effect for special serial bomb. Part 8: Infrared radiation intensity for target flare of aerial target bomb. Spectral analytics method

International Telecommunication Union (ITU), radiation effect baidu

ITU-R 677-1990 (WITHDRAWN) Radio Emission from Natural Sources at Frequencies Above 50 MHz - Section 5C - Effects of the Atmosphere (Radiometeorology)
ITU-R F.1765-2006 Methodology for determining the aggregate equivalent isotropically radiated power from point-to-point high-density applications in the fixed service operating in bands above 30 GHz
ITU-R F.1765 FRENCH-2006 Methodology for determining the aggregate equivalent isotropically radiated power from point-to-point high-density applications in the fixed service operating in bands above 30 GHz
ITU-R F.1765 SPANISH-2006 Methodology for determining the aggregate equivalent isotropically radiated power from point-to-point high-density applications in the fixed service operating in bands above 30 GHz
ITU-R S.1512 SPANISH-2001 Measurement procedure for determining non-geostationary satellite orbit satellite equivalent isotropically radiated power and antenna discrimination
ITU-R REPORT RA.2188-2010 Power flux-density and e.i.r.p. levels potentially damaging to radio astronomy receivers
ITU-R F.1760 SPANISH-2006 Methodology for the calculation of aggregate equivalent isotropically radiated power (a.e.i.r.p.) distribution from point-to-multipoint high-density applications in the fixed service operating in bands above 30 GHz identified for such use
ITU-R F.1760-2006 Methodology for the calculation of aggregate equivalent isotropically radiated power (a.e.i.r.p.) distribution from point-to-multipoint high-density applications in the fixed service operating in bands above 30 GHz identified for such use
ITU-R F.1760 FRENCH-2006 Methodology for the calculation of aggregate equivalent isotropically radiated power (a.e.i.r.p.) distribution from point-to-multipoint high-density applications in the fixed service operating in bands above 30 GHz identified for such use

Danish Standards Foundation, radiation effect baidu

DS/IEC 544-3:1981 Guide for determining the effects of ionizing radioation on insulating materials. Part 3: Test procedures for permanent effects
DS/EN 50121-4:2006 Railway applications - Electromagnetic compatibility - Part 4: Emission and immunity of the signalling and telecommunications apparatus

German Institute for Standardization, radiation effect baidu

DIN EN 60544-2:2013 Electrical insulating materials - Determination of the effects of ionizing radiation on insulating materials - Part 2: Procedures for irradiation and test (IEC 60544-2:2012); German version EN 60544-2:2012
DIN/TS 5031-100:2021 Optical radiation physics and illuminating engineering - Part 100: Melanopic effects of ocular light on human beings - Quantities, symbols and action spectra

Lithuanian Standards Office , radiation effect baidu

LST EN 50121-4-2006 Railway applications - Electromagnetic compatibility - Part 4: Emission and immunity of the signalling and telecommunications apparatus
LST EN 50121-4-2006/AC-2008 Railway applications - Electromagnetic compatibility - Part 4: Emission and immunity of the signalling and telecommunications apparatus

European Committee for Electrotechnical Standardization（CENELEC）, radiation effect baidu

EN 50121-4:2015 Railway applications - Electromagnetic compatibility - Part 4: Emission and immunity of the signalling and telecommunications apparatus
EN 50121-4:2016 Railway applications - Electromagnetic compatibility - Part 4: Emission and immunity of the signalling and telecommunications apparatus
FprEN 50121-4 Railway applications - Electromagnetic compatibility - Part 4: Emission and immunity of the signalling and telecommunications apparatus
EN 61000-4-3:2006 Electromagnetic compatibility (EMC) Part 4-3: Testing and measurement techniques - Radiated, radio-frequency, electromagnetic field immunity test (Incorporates Amendment A2: 2010)

CENELEC - European Committee for Electrotechnical Standardization, radiation effect baidu

EN 50121-5:2017/AC:2019 Railway Applications - Electromagnetic Compatibility - Part 4: Emission and Immunity of the Signalling and Telecommunications Apparatus
EN 50121-4:2016/A1:2019 Railway Applications - Electromagnetic Compatibility - Part 4: Emission and Immunity of the Signalling and Telecommunications Apparatus
EN 50121-4:2000 Railway Applications - Electromagnetic Compatibility - Part 4: Emission and Immunity of the Signalling and Telecommunications Apparatus
EN 50121-3-2:2016/A1:2019 Railway Applications - Electromagnetic Compatibility - Part 4: Emission and Immunity of the Signalling and Telecommunications Apparatus
EN 50121-5:2000 Railway Applications - Electromagnetic Compatibility - Part 5: Emission and Immunity of Fixed Power Supply Installations and Apparatus

SE-SIS, radiation effect baidu

SIS SS-ISO 4037/ADD 2:1990 X and v reference radiations for calibrating dosemeters and dose ratemeters and for determining their response as a function of photon energy — Addendum 2: Photon reference radiations at energies between 4 MeV and 9 MeV
SIS SS IEC 769:1988 Nuclear instrumentation — lonizing radiation measurement systems with analogue or digital signalprocessing for thickness measurements

Society of Automotive Engineers (SAE), radiation effect baidu

SAE AMS3658E-2010 Polytetrafluoroethylene (PTFE) Extrusions, Premium Strength, Sintered and Stress- Relieved Radiographically Inspected

AT-OVE/ON, radiation effect baidu

OVE EN 50121-4-2021 Railway applications - Electromagnetic compatibility - Part 4: Emission and immunity of the signalling and telecommunications apparatus (english version)
OVE EN 50121-5-2021 Railway applications - Electromagnetic compatibility - Part 5: Emission and immunity of fixed power supply installations and apparatus (english version)

National Fire Protection Association (NFPA), radiation effect baidu

NFPA 270-2013 Standard Test Method for Measurement of Smoke Obscuration Using a Conical Radiant Source in a Single Closed Chamber (Effective Date: 12/17/2012)

国家市场监督管理总局、中国国家标准化管理委员会, radiation effect baidu

GB/T 41270.7-2022 Process management for avionics—Atmospheric radiation effects—Part 7： Management of single event effects (SEE) analysis process in avionics design
GB/T 41270.9-2022 Process management for avionics—Atmospheric radiation effects—Part 9：Single event effect fault rate calculation methods and procedures for avionic equipment

工业和信息化部, radiation effect baidu

YD/T 3812-2020 Calculation method for off-axis equivalent isotropic radiated power density limits for geostationary satellite network earth stations in the fixed-satellite service