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permanent radiation effect

permanent radiation effect, Total:164 items.

In the international standard classification, permanent radiation effect involves: Geology. Meteorology. Hydrology, Insulating materials, Company organization and management, Aerospace electric equipment and systems, Electronic components in general, Radiation measurements, On-board equipment and instruments, Medical equipment, Radiation protection, Aircraft and space vehicles in general, Space systems and operations, Semiconductor devices, Materials for aerospace construction, Integrated circuits. Microelectronics, Earth-moving machinery, Valves, Environmental testing.

Danish Standards Foundation, permanent radiation effect

DS/IEC 544-3:1981 Guide for determining the effects of ionizing radioation on insulating materials. Part 3: Test procedures for permanent effects
DS/EN IEC 60522-1:2021 Medical electrical equipment – Diagnostic X-rays – Part 1: Determination of quality equivalent filtration and permanent filtration
DS/IEC TR 60522-2:2020 Medical electrical equipment – Diagnostics X-rays – Part 2: Guidance and rationale on quality equivalent filtration and permanent filtration

Illuminating Engineering Society of North America, permanent radiation effect

IESNA HB-9 CHAPTER 5-2000 Nonvisual Effects of Optical Radiation

Military Standard of the People's Republic of China-General Armament Department, permanent radiation effect

GJB 9730-2020 Specification for particle radiation effect detectors
GJB 9397-2018 Test method for neutron radiation effects of military electronic components
GJB 9396-2018 Ground simulation test method for space environment radiation effects of charge-coupled devices
GJB 8670.6-2015 Test methods for special bomb effects Part 6: Determination of flame temperature of arson bombs Thermal radiation method
GJB 5214.19-2003 Special bomb effect test method Part 19: Bandpass method for measuring infrared radiation intensity of infrared jamming bombs

中国气象局, permanent radiation effect

QX/T 546-2020 Terminology for space high-energy particle radiation effects

British Standards Institution (BSI), permanent radiation effect

BS EN 62396-1:2016 Process management for avionics. Atmospheric radiation effects - Accommodation of atmospheric radiation effects via single event effects within avionics electronic equipment
DD IEC/TS 62396-1:2006 Process management for avionics. Atmospheric radiation effects - Accommodation of atmospheric radiation effects via single event effects within avionics electronic equipment
DD IEC/TS 62396-3:2008 Process management for avionics. Atmospheric radiation effects - Optimising system design to accommodate the single event effects (SEE) of atmospheric radiation
DD IEC/PAS 62396-3:2007 Process management for avionics. Atmospheric radiation effects - Optimising system design to accommodate the single event effects (SEE) of atmospheric radiation
BS EN 60544-1:2013 Electrical insulating materials. Determination of the effects of ionizing radiation. Radiation interaction and dosimetry
BS IEC 62396-1:2012 Process management for avionics. Atmospheric radiation effects. Accommodation of atmospheric radiation effects via single event effects within avionics electronic equipment
BS DD IEC/TS 62396-1:2006 Process management for avionics - Atmospheric radiation effects - Accommodation of atmospheric radiation effects via single event effects within avionics electronic equipment
BS IEC 62396-1:2016 Process management for avionics. Atmospheric radiation effects. Accommodation of atmospheric radiation effects via single event effects within avionics electronic equipment
BS EN 60544-4:2003 Electrical insulating materials - Determination of the effects of ionizing radiation - Classification system for service in radiation environments
BS EN IEC 60522-1:2021 Medical electrical equipment. Diagnostic X-rays. Determination of quality equivalent filtration and permanent filtration
PD IEC TR 60522-2:2020 Medical electrical equipment. Diagnostic X-rays. Guidance and rationale on quality equivalent filtration and permanent filtration
PD CEN/TR 17602-60-02:2021 Space product assurance. Techniques for radiation effects mitigation in ASICs and FPGAs handbook
DD IEC/TS 62396-2:2008 Process management for avionics. Atmospheric radiation effects - Guidelines for single event effects testing for avionics systems
DD IEC/PAS 62396-2:2007 Process management for avionics. Atmospheric radiation effects - Guidelines for single event effects testing for avionics systems
18/30373156 DC BS EN 60522-1. Medical electrical equipment. Diagnostic X-rays. Part 1. Determination of quality equivalent filtration and permanent 38 filtration
BS IEC 62396-3:2013 Process management for avionics. Atmospheric radiation effects. System design optimization to accommodate the single event effects (SEE) of atmospheric radiation
BS IEC 62396-2:2017 Tracked Changes. Process management for avionics. Atmospheric radiation effects. Guidelines for single event effects testing for avionics systems
DD IEC/PAS 62396-5:2007 Process management for avionics. Atmospheric radiation effects - Guidelines for assessing thermal neutron fluxes and effects in avionics systems
DD IEC/TS 62396-5:2008 Process management for avionics. Atmospheric radiation effects - Guidelines for assessing thermal neutron fluxes and effects in avionics systems
BS DD IEC/TS 62396-4:2009 Process management for avionics. Atmospheric radiation effects. Guidelines for designing with high voltage aircraft electronics and potential single event effects
DD IEC/TS 62396-4:2008 Process management for avionics. Atmospheric radiation effects - Guidelines for designing with high voltage aircraft electronics and potential single event effects
DD IEC/PAS 62396-4:2007 Process management for avionics. Atmospheric radiation effects - Guidelines for designing with high voltage aircraft electronics and potential single event effects
PD IEC/TR 62396-7:2017 Process management for avionics. Atmospheric radiation effects. Management of single event effects (SEE) analysis process in avionics design
PD IEC TR 62396-8:2020 Process management for avionics. Atmospheric radiation effects. Proton, electron, pion, muon, alpha-ray fluxes and single event effects in avionics electronic equipment. Awareness guidelines

Standard Association of Australia （SAA）, permanent radiation effect

IEC 62396-1:2016 RLV Process management for avionics — Atmospheric radiation effects — Part 1: Accommodation of atmospheric radiation effects via single event effects within avionics electronic equipment

IEC - International Electrotechnical Commission, permanent radiation effect

TS 62396-1-2006 Process management for avionics – Atmospheric radiation effects – Part 1: Accommodation of atmospheric radiation effects via single event effects within avionics electronic equipment (Edition 1.0)
TS 62396-3-2008 Process management for avionics – Atmospheric radiation effects – Part 3: Optimising system design to accommodate the single event effects (SEE) of atmospheric radiation (Edition 1.0)
PAS 62396-3-2007 Process management for avionics – Atmospheric radiation effects – Part 3: Optimising system design to accommodate the Single Event Effects (SEE) of atmospheric radiation (Edition 1.0)
IEC 60544-3:1979 Guide for Determining the Effects of Ionizing Radiation on Insulating Materials Part 3: Test Procedures for Permanent Effects (Edition 1.0)
TS 62396-2-2008 Process management for avionics – Atmospheric radiation effects – Part 2: Guidelines for single event effects testing for avionics systems (Edition 1.0)
PAS 62396-2-2007 Process management for avionics – Atmospheric radiation effects – Part 2: Guidelines for single event effects testing for avionics systems (Edition 1.0)
PAS 62396-5-2007 Process management for avionics – Atmospheric radiation effects – Part 5: Guidelines for assessing thermal neutron fluxes and effects in avionics systems (Edition 1.0)
TS 62396-5-2008 Process management for avionics – Atmospheric radiation effects – Part 5: Guidelines for assessing thermal neutron fluxes and effects in avionics systems (Edition 1.0)
TS 62396-4-2008 Process management for avionics – Atmospheric radiation effects – Part 4: Guidelines for designing with high voltage aircraft electronics and potential single event effects (Edition 1.0)
PAS 62396-4-2007 Process management for avionics – Atmospheric radiation effects – Part 4: Guidelines for designing with high voltage aircraft electronics and potential single event effects (Edition 1.0)

WRC - Welding Research Council, permanent radiation effect

BULLETIN 87-1963 CRITICAL F ACTORS IN THE INTERPRETATION OF RADIATION EFFECTS ON THE MECHANICAL PROPERTIES OF STRUCTURAL METALS COMMERCIAL IMPLICATIONS OF RADIATION EFFECTS ON REACTOR PRESSURE VESSEL DESIGN@ FABRICATI

International Electrotechnical Commission (IEC), permanent radiation effect

IEC TS 62396-3:2008 Process management for avionics - Atmospheric radiation effects - Part 3: Optimising system design to accommodate the single event effects (SEE) of atmospheric radiation
IEC TS 62396-1:2006 Process management for avionics - Atmospheric radiation effects - Part 1: Accommodation of atmospheric radiation effects via single event effects within avionics electronic equipment
IEC TR 60522-2:2020 Medical electrical equipment - Diagnostics X-rays - Part 2: Guidance and rationale on quality equivalent filtration and permanent filtration
IEC 60544-4:2003 Electrical insulating materials - Determination of the effects of ionizing radiation - Part 4: Classification system for service in radiation environments
IEC 60544-4:1985 Guide for determining the effects of ionizing radiation on insulating materials. Part 4 : Classification system for service in radiation environments
IEC 60544-2:2012 Electrical insulating materials - Determination of the effects of ionizing radiation on insulating materials - Part 2: Procedures for irradiation and test
IEC TS 62396-2:2008 Process management for avionics - Atmosperic radiation effects - Part 2: Guidelines for single event effects testing for avionics systems
IEC 62396-2:2017 Process management for avionics - Atmospheric radiation effects - Part 2: Guidelines for single event effects testing for avionics systems
IEC 62396-3:2013 Process management for avionics - Atmospheric radiation effects - Part 3: System design optimization to accommodate the single event effects (SEE) of atmospheric radiation
IEC TS 62396-5:2008 Process management for avionics - Atmospheric radiation effects - Part 5: Guidelines for assessing thermal neutron fluxes and effects in avionics systems
IEC TR 62396-7:2017 Process management for avionics - Atmospheric radiation effects - Part 7: Management of single event effects (SEE) analysis process in avionics design
IEC 62396-1:2012 Process management for avionics - Atmospheric radioation effects - Part 1: Accommodation of atmospheric radiation effects via single event effects within avionics electronic equipment
IEC 62396-1:2016 Process management for avionics - Atmospheric radiation effects - Part 1: Accommodation of atmospheric radiation effects via single event effects within avionics electronic equipment
IEC TR 62396-8:2020 Process management for avionics - Atmospheric radiation effects - Part 8: Proton, electron, pion, muon, alpha-ray fluxes and single event effects in avionics electronic equipment - Awareness guideline

RO-ASRO, permanent radiation effect

STAS 12149/3-1985 ELECTRICAL INSULATING MATERIALS MEASUREMENT OF THE EFFECTS OF IONIZING RADIATION ON INSULATING MATERIALS Test procedures for permanent effects

FI-SFS, permanent radiation effect

SFS 5519-1989

Association Francaise de Normalisation, permanent radiation effect

NF C26-290-1*NF EN 60544-1:2014 Electrical insulating materials - Determination of the effects of ionizing radiation - Part 1 : radiation interaction and dosimetry
NF EN IEC 60522-1:2021 Appareils électromedicaux - Rayonnements X de diagnostic - Partie 1 : détermination de la filtration de qualité équivalente et de la filtration permanente
NF EN 16603-10-12:2016 Ingénierie spatiale - Procédé pour le calcul de rayonnement reçu et ses effets, et une politique de marges de conception
NF C26-290-2*NF EN 60544-2:2013 Electrical insulating materials - Determination of the effects of ionizing radiation on insulating materials - Part 2 : procedures for irradiation and test

Korean Agency for Technology and Standards (KATS), permanent radiation effect

KS C IEC 60544-1:2019 Electrical insulating materials ― Determination of the effects of ionizing radiation — Part 1: Radiation interaction and dosimetry
KS C IEC 60544-4-2014(2019) Electrical insulating materials ― Determination of the effects of ionizing radiation — Part 4: Classification system for service in radiation environments

KR-KS, permanent radiation effect

KS C IEC 60544-1-2019 Electrical insulating materials ― Determination of the effects of ionizing radiation — Part 1: Radiation interaction and dosimetry

European Committee for Electrotechnical Standardization（CENELEC）, permanent radiation effect

EN IEC 60522-1:2021 Medical electrical equipment - Diagnostic X-rays - Part 1: Determination of quality equivalent filtration and permanent filtration

German Institute for Standardization, permanent radiation effect

DIN EN IEC 60522-1:2022-05 Medical electrical equipment - Diagnostic X-rays - Part 1: Determination of quality equivalent filtration and permanent filtration (IEC 60522-1:2020); German version EN IEC 60522-1:2021
DIN EN IEC 60522-1:2021 Medical electrical equipment Diagnostics X-Rays Part 1: Determination of quality equivalent filtration and permanent filtration (IEC CDV 60522-1:2020); German and English version EN IEC 60522-1:2021 ￥570.00

ES-UNE, permanent radiation effect

UNE-EN IEC 60522-1:2021 Medical electrical equipment - Diagnostic X-rays - Part 1: Determination of quality equivalent filtration and permanent filtration (Endorsed by Asociación Española de Normalización in April of 2021.)
UNE-CEN/TR 17602-60-02:2021 Space product assurance - Techniques for radiation effects mitigation in ASICs and FPGAs handbook (Endorsed by Asociación Española de Normalización in January of 2022.)

RU-GOST R, permanent radiation effect

GOST 25645.214-1985 Space crew radiation safety during space flight. Model of generalized radiobiological effect
GOST 25645.219-1990 Space crew radiation safety during space flight. Model describing the influence of spatial nonuniformity radiation exposure on the generalized radiobiological effect

American Society for Testing and Materials (ASTM), permanent radiation effect

ASTM F1892-12(2018) Standard Guide for Ionizing Radiation (Total Dose) Effects Testing of Semiconductor Devices
ASTM F1892-06 Standard Guide for Ionizing Radiation (Total Dose) Effects Testing of Semiconductor Devices
ASTM F1892-04 Standard Guide for Ionizing Radiation (Total Dose) Effects Testing of Semiconductor Devices
ASTM F1892-98 Standard Guide for Ionizing Radiation (Total Dose) Effects Testing of Semiconductor Devices
ASTM F1892-12 Standard Guide for Ionizing Radiation (Total Dose) Effects Testing of Semiconductor Devices
ASTM F1467-99(2005)e1 Standard Guide for Use of an X-Ray Tester ([approximate]10 keV Photons) in Ionizing Radiation Effects Testing of Semiconductor Devices and Microcircuits
ASTM F1467-99 Standard Guide for Use of an X-Ray Tester ([approximate]10 keV Photons) in Ionizing Radiation Effects Testing of Semiconductor Devices and Microcircuits
ASTM F1467-99(2005) Standard Guide for Use of an X-Ray Tester ([approximate]10 keV Photons) in Ionizing Radiation Effects Testing of Semiconductor Devices and Microcircuits
ASTM F1467-11 Standard Guide for Use of an X-Ray Tester (x2248;10 keV Photons) in Ionizing Radiation Effects Testing of Semiconductor Devices and Microcircuits

Lithuanian Standards Office , permanent radiation effect

LST EN IEC 60522-1:2021 Medical electrical equipment - Diagnostic X-rays - Part 1: Determination of quality equivalent filtration and permanent filtration (IEC 60522-1:2020)

PL-PKN, permanent radiation effect

PN-EN IEC 60522-1-2021-08 E Medical electrical equipment -- Diagnostics X-rays -- Part 1: Determination of quality equivalent filtration and permanent filtration (IEC 60522-1:2020)

General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China, permanent radiation effect

GB/T 10263.5-1988 Basic enviromental testing procedures for radiation detectors--Effective testing of exposure to light
GB/T 42846-2023 Ground simulation method for space radiation effect of non-metallic materials in space environment
GB/T 42242-2022 Space environment—Evaluation of radiation effects on Commercial-Off-The-Shelf (COTS) parts for use on low-orbit satellite

中华人民共和国国家质量监督检验检疫总局、中国国家标准化管理委员会, permanent radiation effect

GB/T 34955-2017 Atmospheric radiation effects—Guidelines for single event effects testing for avionics systems
GB/T 34956-2017 Atmospheric radiation effects—Accommodation of atmospheric radiation effects via single event effects within avionics electronic equipment

ASHRAE - American Society of Heating@ Refrigerating and Air-Conditioning Engineers@ Inc., permanent radiation effect

ASHRAE 4247-1999 Effect of a Radiant Barrier on the Cooling Load of a Residential Application in a Hot and Arid Region: Attic Duct Effect

Defense Logistics Agency, permanent radiation effect

DLA MIL-PRF-19500/634 C-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, N-CHANNEL SILICON, TYPES 2N7405, 2N7406, 2N7407, AND 2N7408, JANSD AND JANSR
DLA MIL-PRF-19500/705 B-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7488T3, 2N7489T3, AND 2N7490T3, JANTXVR AND JANSR
DLA MIL-PRF-19500/685 D (1)-2009 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7475T1, 2N7476T1, AND 2N7477T1 (TOTAL DOSE AND SINGLE EVENT EFFECTS), JANTXVR AND JANSR
DLA MIL-PRF-19500/685 E-2010 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7475T1, 2N7476T1, AND 2N7477T1 (TOTAL DOSE AND SINGLE EVENT EFFECTS), JANTXVR AND JANSR
DLA MIL-PRF-19500/685 F-2013 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7475T1, 2N7476T1, AND 2N7477T1 (TOTAL DOSE AND SINGLE EVENT EFFECTS), JANTXVR AND JANSR
DLA MIL-PRF-19500/704 B-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7485U3, 2N7486U3, AND 2N7487U3, JANTXVR AND JANSR
DLA MIL-PRF-19500/684 D (1)-2009 SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT, SILICON, N-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), TYPES 2N7472U2, 2N7473U2, AND 2N7474U2, JANTXVR AND JANSR
DLA MIL-PRF-19500/633 C-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, P-CHANNEL SILICON, TYPES 2N7403 AND 2N7404, JANSD AND JANSR
DLA MIL-PRF-19500/658 VALID NOTICE 2-2011 Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistor, P-Channel Silicon Type 2N7438, and 2N7439 JANSD and JANSR
DLA MIL-PRF-19500/706 A VALID NOTICE 1-2010 Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistor, N-Channel, Silicon Types 2N7497T2, 2N7498T2, and 2N7499T2, JANTXVR and JANSR
DLA MIL-PRF-19500/605 C-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7292, 2N7294, 2N7296, AND 2N7298, JANTXVM, D, R, H AND JANSM, D AND R
DLA MIL-PRF-19500/704 B (1)-2010 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7485U3, 2N7486U3, AND 2N7487U3, JANTXVR AND JANSR
DLA MIL-PRF-19500/752-2010 SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), LOGIC-LEVEL SILICON, TYPE 2N7608T2, JANTXVR, JANTXVF, JANSR, AND JANSF
DLA MIL-PRF-19500/704 C-2010 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7485U3, 2N7486U3, AND 2N7487U3, JANTXVR AND JANSR
DLA MIL-PRF-19500/705 C-2011 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7488T3, 2N7489T3, AND 2N7490T3, JANTXVR AND JANSR
DLA MIL-PRF-19500/749-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), SILICON, TYPES 2N7506U8 AND 2N7506U8C, JANTXVR, JANTXVF, JANSR AND JANSF
DLA SMD-5962-98636 REV C-2003 MICROCIRCUIT, LINEAR, RADIATION HARDENED JFET-INPUT OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
DLA SMD-5962-00521 REV E-2008 MICROCIRCUIT, DIGITAL-LINEAR, RADIATION HARDENED, COMPLEMENTARY SWITCH FET DRIVER, MONOLITHIC SILICON
DLA SMD-5962-00521 REV D-2003 MICROCIRCUIT, DIGITAL-LINEAR, RADIATION HARDENED, COMPLEMENTARY SWITCH FET DRIVER, MONOLITHIC SILICON
DLA MIL-PRF-19500/633 D-2013 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, P-CHANNEL SILICON, TYPES 2N7403 AND 2N7404, JANSD AND JANSR
DLA MIL-PRF-19500/683 C-2008 SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT, N-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TYPE 2N7467U2, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
DLA MIL-PRF-19500/747-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), SILICON, TYPE 2N7504T2, JANTXVR, JANTXVF, JANTXVG, JANTXVH, JANSF, JANSG, JANSR, AND JANSH
DLA MIL-PRF-19500/744-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), LOGIC-LEVEL SILICON, TYPES 2N7616UB, 2N7616UBC, JANTXVR, JANTXVF, JANSR, AND JANSF
DLA MIL-PRF-19500/687 B-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL SILICON, TYPES 2N7509, 2N7510, AND 2N7511, JANTXVD, R AND JANSD, R
DLA MIL-PRF-19500/689 VALID NOTICE 2-2011 Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistor, N-Channel Silicon Types 2N7512, 2N7513, and 2N7514 JANTXVD, R and JANSD, R
DLA MIL-PRF-19500/687 B VALID NOTICE 1-2013 Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistor, N-Channel Silicon, Types 2N7509, 2N7510, and 2N7511, JANTXVD, R and JANSD, R
DLA MIL-PRF-19500/745-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), LOGIC-LEVEL SILICON, TYPES 2N7626UB, 2N7626UBC, JANTXVR, JANTXVF, JANSR, AND JANSF
DLA MIL-PRF-19500/745 A-2009 SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), LOGIC-LEVEL SILICON, TYPES 2N7626UB, 2N7626UBC, JANTXVR, JANTXVF, JANSR, AND JANSF
DLA MIL-PRF-19500/683 C (1)-2009 SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT, N-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TYPE 2N7467U2, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
DLA MIL-PRF-19500/753-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7580T1, 2N7582T1, 2N7584T1, AND 2N7586T1, JANTXVR, JANTXVF, JANSR, AND JANSF
DLA MIL-PRF-19500/755-2010 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7588T3, 2N7590T3, 2N7592T3 AND 2N7594T3, JANTXVR, JANTXVF, JANSR AND JANSF
DLA MIL-PRF-19500/733 B-2010 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7523T1, 2N7523U2, 2N7524T1, AND 2N7524U2, JANTXVR, F AND JANSR, F
DLA MIL-PRF-19500/713 B-2010 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7549T1, 2N7549U2, 2N7550T1, AND 2N7550U2, JANTXVR, F AND JANSR, F
DLA MIL-PRF-19500/753 B-2013 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7580T1, 2N7582T1, 2N7584T1, AND 2N7586T1, JANTXVR, JANTXVF, JANSR, AND JANSF
DLA MIL-PRF-19500/741 A-2009 SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR DIE, N-CHANNEL AND P-CHANNEL, SILICON, VARIOUS TYPES, JANHC AND JANKC
DLA MIL-PRF-19500/757 A-2011 SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), LOGIC-LEVEL SILICON, TYPES 2N7624U3 AND 2N7625T3, JANTXVR, JANTXVF, JANSR, AND JANSF
DLA MIL-PRF-19500/741 A VALID NOTICE 1-2013 Semiconductor Device, Field Effect, Radiation Hardened (Total Dose and Single Event Effects) Transistor Die, N-Channel and PChannel, Silicon, Various Types, JANHC and JANKC
DLA MIL-PRF-19500/675 E-2013 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7463T2, 2N7464T2, 2N7463U5 AND 2N7464U5 JANTXVR AND JANSR
DLA MIL-PRF-19500/634 D-2013 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, N-CHANNEL SILICON, TYPES 2N7405, 2N7406, 2N7407, AND 2N7408, JANSD AND JANSR
DLA MIL-PRF-19500/732 A-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7519U3, 2N7519U3C, 2N7519T3, 2N7520U3, 2N7520U3C, AND 2N7520T3, JANTXVR, F AND JANSR, F
DLA MIL-PRF-19500/743-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7503U8 AND 2N7503U8C, JANTXVR, F AND G AND JANSR, F AND G
DLA MIL-PRF-19500/746-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7587U3, 2N7587U3C, 2N7589U3, 2N7589U3C, 2N7591U3, 2N7591U3C, 2N7593U3, AND 2N7593U3C, JANTXVR, JANTXVF, JANSR, AND JANSF
DLA MIL-PRF-19500/697 C (1)-2009 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPE 2N7478T1, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
DLA MIL-PRF-19500/758-2010 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7609U8 AND 2N7609U8C, JANTXVR, F AND G AND JANSR, F AND G
DLA MIL-PRF-19500/697 D-2011 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPE 2N7478T1, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
DLA MIL-PRF-19500/746 B-2011 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7587U3, 2N7587U3C, 2N7589U3, 2N7589U3C, 2N7591U3, 2N7591U3C, 2N7593U3, AND 2N7593U3C, JANTXVR, JANTXVF, JANSR, AND JANSF
DLA MIL-PRF-19500/655 E-2012 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, P-CHANNEL SILICON, TYPES 2N7424U, 2N7425U, AND 2N7426U, JANTXVR AND F AND JANSR AND F
DLA MIL-PRF-19500/697 E-2013 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPE 2N7478T1, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
DLA MIL-PRF-19500/657 B-2011 SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED, TRANSISTOR DIE, N AND P-CHANNEL, SILICON VARIOUS TYPES JANHC AND JANKC
DLA MIL-PRF-19500/660 D-2013 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, P-CHANNEL SILICON, TYPES 2N7424, 2N7425, AND 2N7426, JANTXVR, JANTXVF, JANSR, AND JANSF
DLA MIL-PRF-19500/660 E-2013 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, P-CHANNEL SILICON, TYPES 2N7424, 2N7425, AND 2N7426, JANTXVR, JANTXVF, JANSR, AND JANSF
DLA MIL-PRF-19500/687 C-2013 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, N-CHANNEL SILICON, TYPES 2N7509, 2N7510, AND 2N7511, JANTXVD, R AND JANSD, R
DLA MIL-PRF-19500/739-2006 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) QUAD TRANSISTOR, N-CHANNEL AND P-CHANNEL, SILICON, TYPES 2N7518 AND 2N7518U, JANTXVR, F, AND JANSR, F
DLA MIL-PRF-19500/743 A-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7503U8 AND 2N7503U8C, JANTXVR, F, G AND H AND JANSR, F, G AND H
DLA MIL-PRF-19500/673 A (1)-2009 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7468U2 AND 2N7469U2 JANTXVR, F, G AND H AND JANSR, F, G AND H
DLA MIL-PRF-19500/698 D-2010 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7470T1 AND 2N7471T1, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
DLA MIL-PRF-19500/759 REV A-2012 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) DUAL TRANSISTOR, N-CHANNEL AND P-CHANNEL, LOGIC-LEVEL SILICON TYPES 2N7632UD, JANTXVR, F, AND JANSR, F
DLA MIL-PRF-19500/698 E-2013 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7470T1 AND 2N7471T1, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
DLA MIL-PRF-19500/700 A VALID NOTICE 1-2010 Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistor, N-Channel, Silicon, Types 2N7494U5, 2N7495U5, and 2N7496U5, JANTXVR, F, G, and H, and JANSR, F, G, and H
DLA MIL-PRF-19500/676 E-2013 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7465T3 AND 2N7466T3 AND U3 SUFFIXES, JANTXVR AND JANSR
DLA MIL-PRF-19500/701 A (1)-2009 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7491T2, 2N7492T2, AND 2N7493T2, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
DLA MIL-PRF-19500/702 B (1)-2010 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7482T3, 2N7483T3, AND 2N7484T3, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
DLA MIL-PRF-19500/702 C-2010 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7482T3, 2N7483T3, AND 2N7484T3, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
DLA MIL-PRF-19500/703 B-2010 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7479U3, 2N7480U3, AND 2N7481U3, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
DLA MIL-PRF-19500/701 B-2011 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7491T2, 2N7492T2, AND 2N7493T2, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
DLA MIL-PRF-19500/700 B-2011 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7494U5, 2N7495U5, AND 2N7496U5, JANTXVR, F, G, AND H, AND JANSR, F, G, AND H

(U.S.) Joint Electron Device Engineering Council Soild State Technology Association, permanent radiation effect

JEDEC JESD57-1996 Test Procedures for the Measurement of Single-Event Effects in Semiconductor Devices from Heavy Ion Irradiation

Japanese Industrial Standards Committee (JISC), permanent radiation effect

JIS A 8330-6:2006 Earth-moving machinery -- Operator enclosure environment -- Part 6: Determination of effect of solar heating on operator enclosure

International Organization for Standardization (ISO), permanent radiation effect

ISO 10263-6:1994 Earth-moving machinery - Operator enclosure environment - Part 6: Determination of effect of solar heating on operator enclosure
ISO 21980:2020 Space systems — Evaluation of radiation effects on Commercial-Off-The-Shelf (COTS) parts for use on low-orbit satellite

International Telecommunication Union (ITU), permanent radiation effect

ITU-R 677-1990 (WITHDRAWN) Radio Emission from Natural Sources at Frequencies Above 50 MHz - Section 5C - Effects of the Atmosphere (Radiometeorology)