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single crystal polycrystalline
single crystal polycrystalline, Total:451 items.
In the international standard classification, single crystal polycrystalline involves: Iron and steel products, Semiconducting materials, Construction materials, Optical equipment, Industrial furnaces, Optoelectronics. Laser equipment, Magnetic materials, Refractories, Chipless working equipment, Galvanic cells and batteries, Inorganic chemicals, Ceramics, Energy and heat transfer engineering in general, Components for electrical equipment, Semiconductor devices, Non-ferrous metals, Insulating materials, Materials for the reinforcement of composites, Company organization and management, Products of the chemical industry, Non-destructive testing, Products of non-ferrous metals, Terminology (principles and coordination), Medical equipment, Solar energy engineering, Rotating machinery, Education, Testing of metals, Paper and board, Insulating fluids, Cutting tools, Water quality, Farming and forestry, Vocabularies, Environmental protection, Installations in buildings, Analytical chemistry, Wastes, Occupational safety. Industrial hygiene, Electronic display devices, Optics and optical measurements, Organic chemicals, Components and accessories for telecommunications equipment, Piezoelectric and dielectric devices, Rectifiers. Convertors. Stabilized power supply, Fibre optic communications, Air quality, Electricity. Magnetism. Electrical and magnetic measurements, Machine tools, Powder metallurgy, Welding, brazing and soldering, Nuclear energy engineering.
General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China, single crystal polycrystalline
- GB/T 11072-1989 Indium antimonide polycrystal, single crystals and as-cut slices
- GB/T 11072-2009 Indium antimonide polycrystal,single crystals and as-cut slices
- GB/T 12963-2009 Specification for polycrystalline silicon
- GB/T 12963-1996 Polycrystalline silicon
- GB/T 12963-2014 Electronic-grade polycrystalline silicon
- GB/T 12963-2022 Electronic-grade polycrystalline silicon
- GB/T 25074-2010 Solar-grade polycrystalline silicon
- GB/T 25074-2017(英文版) Solar grade polycrystalline silicon
- GB 29447-2022 The norm of energy consumption per unit products of polysilicon and germanium
- GB 29447-2012 The norm of energy consumption per unit product of polysilicon enterprise
- GB 51034-2014 Code for design of polysilicon plant
- GB/T 29055-2012 Multi-crystalline silicon wafer for solar cell
- GB/T 5238-2009 Monocrystalline germanium and monocrystalline germanium slices
- GB/T 5238-2009(英文版) Monocrystalline germanium and monocrystalline germanium slices
- GB/T 29054-2012 Solar-grade casting multi-crystalline silicon brick
- GB/T 31092-2014 Monocrystalline sapphire ingot
- GB/T 31092-2022 Monocrystalline sapphire bar
- GB/T 29055-2019(英文版) Multi crystalline silicon wafers for photovoltaic solar cell
- GB/T 4059-1983 Polycrystalline silicon--Examination method--Zone-melting on phosphorus under controlled atmosphere
- GB/T 29057-2023 Practice for evaluating polycrystalline silicon rods by zone fusion pulling and spectroscopic analysis
- GB/T 29057-2012 Practice for evaluation of polocrystalline silicon rods by float-zone crystal growth and spectroscopy
- GB/T 12962-1996 Monocrystalline silicon
- GB/T 12962-2005 Monoccrystslline silicon
- GB/T 5238-1995 Monocrystalline germanium
- GB/T 12962-2015 Silicon single crystal
- GB/T 4059-2007 Polycrystalline silicon.Examination method.Zone-melting on Phosphorus under controlled atmosphere
- GB/T 4060-2007 Polycrystalline silicon.Examination method.Vacuum zone-melting on boron
- GB/T 4060-1983 Polycrystalline silicon--Examination method--Vacuum zone-melting on boron
- GB/T 29054-2019(英文版) Casting multi crystalline silicon brick for photovoltaic solar cell
- GB/T 15713-1995 Monocrystalline germanium slices
- GB/T 29504-2013 300 mm monocrystalline silicon
- GB/T 1555-1997 Test methods for determining the orientation of a semiconductor single crystal
- GB/T 1555-2023 Method for Determination of Crystalline Orientation of Semiconductor Single Crystal
- GB/T 1555-2009 Testing methods for determining the orientation of a semiconductor single crystal
- GB/T 32652-2016 Fused quartz used for quartz ceramic crucibles for casting polycrystalline silicon
- GB/T 4061-2009 Polycrystalline silicon-examination method-assessment of sandwiches on cross-section by chemical corrosion
- GB/T 4061-1983 Polycrystalline silicon--Examination method--Assessment of sandwiches on cross-section by chemical corrosion
- GB/T 20229-2006 Gallium phosphide signle crystal
- GB/T 20230-2006 Indium phosphide signle crystal
- GB/T 20228-2006 Gallium arsenide single crystal
- GB/T 14843-1993 Lithium niobate single crystals
- GB/T 12964-2003 Monocrystalline silicon polished wafers
- GB/T 41662-2022 Cadmium zinc telluride polycrystalline for
high energy ray detection and imaging materials
- GB/T 29506-2013 300 mm polished monocrystalline silicon wafers
- GB/T 30656-2014 Polished monocrystalline silicon carbide wafers
- GB/T 25076-2010 Monocrystalline silicon of solar cell
- GB/T 30656-2023 Silicon carbide single crystal polished wafer
- GB/T 41751-2022 Test method for radius of curvature of crystal plane in GaN single crystal substrate wafers
- GB/T 42676-2023 X-ray Diffraction Method for Testing the Quality of Semiconductor Single Crystal
- GB/T 30118-2013 Single crystal wafers for surface acoustic wave (SAW) device applications.Specifications and measuring methods
- GB/T 26072-2010 Germanium single crystal solar cell
- GB/T 12965-1996 Monocrystalline silicon as cut slices and lapped slices
- GB/T 12965-2005 Monocrystalline silicon cut slices and lapped slice
- GB/T 12632-1990 General specification of single silicon solar cells
- GB/T 1551-2009 Test method for measuring resistivity of monocrystal silicom
- GB/T 26065-2010 Specification for polished test silicon wafers
- GB/T 30858-2014 Polished mono-crystalline sapphire substrate product
- GB/T 13843-1992 Polished monocrystalline sapphire substrates
- GB/T 24579-2009 Test methods for measuring surface metal contamination of polycrystalline silicon by acid extraction-atomic absorption spectroscopy
- GB/T 13066-1991 Blank detail specification for unijunction transistors
- GB/T 25075-2010 Gallium arsenide single crystal for solar cell
- GB/T 29420-2012 Nd-doped vanadate laser crystal devices
- GB/T 29508-2013 300 mm monocrystalline silicon as cut slices and grinded slices
- GB/T 34213-2023 High-purity alumina for sapphire single crystal
- GB/T 24582-2009 Test method for measuring surface metal contamination of polycrystalline silicon by acid extraction-inductively coupled plasma mass spectrometry
- GB/T 32188-2015 Test method for full width at half maximum of double crystal X-ray rocking curve of GaN single crystal substrate
Group Standards of the People's Republic of China, single crystal polycrystalline
CZ-CSN, single crystal polycrystalline
UNKNOWN, single crystal polycrystalline
Korean Agency for Technology and Standards (KATS), single crystal polycrystalline
- KS D 2715-2006 Tensile specimen of single- and poly-crystal nano/micro thin film materials
- KS D 2715-2017 Tensile specimen of single- and poly-crystal nano/micro thin film materials
- KS D 2715-2006(2011) Tensile specimen of single- and poly-crystal nano/micro thin film materials
- KS B 3620-2012 Polycrystalline diamond dies for wire drawing
- KS C IEC 60119-2014(2019) Recommendations for polycrystalline semiconductor rectifier stacks and equipments
- KS C IEC 60119:2014 Recommendations for polycrystalline semiconductor rectifier stacks and equipments
- KS C 7110-2007(2017) Liquid crystal display devices-Measurement methods of backlight unit for liquid crystal displays
- KS C IEC 60122-4:2022 Quartz crystal units of assessed quality —Part 4: Crystal units with thermistors
- KS C 7110-2007(2022) Liquid crystal display devices-Measurement methods of backlight unit for liquid crystal displays
- KS C IEC 61747-3-2002(2017) Liquid crystal and solid state display devices-Part 3:Sectional specification of liquid crystal display (LCD) cells
- KS C IEC 61747-3-2002(2022) Liquid crystal and solid state display devices-Part 3:Sectional specification of liquid crystal display (LCD) cells
- KS C IEC 61747-20-1-2015(2020) LIQUID CRYSTAL DISPLAY DEVICES ― Part 20-3: Visual inspection ― Monochrome LCD display cells (excluding all active matrix liquid crystal cells)
Professional Standard - Light Industry, single crystal polycrystalline
国家市场监督管理总局、中国国家标准化管理委员会, single crystal polycrystalline
- GB/T 36706-2018 Polycrystalline indium phosphide
- GB/T 5238-2019 Monocrystalline germanium and monocrystalline germanium slices
- GB/T 29055-2019 Multicrystalline silicon wafers for photovoltaic solar cell
- GB/T 38907-2020 Water saving enterprises—Polysilicon industry
- GB/T 37051-2018 Test method for determination of crystal defect density in PV silicon ingot and wafer
- GB/T 29054-2019 Casting multicrystalline silicon brick for photovoltaic solar cell
- GB/T 4059-2018 Test method for phosphorus content in polycrystalline silicon by zone-melting method under controlled atmosphere
- GB/T 4060-2018 Test method for boron content in polycrystalline silicon by vacuum zone-melting method
- GB/T 18916.47-2020 Norm of water intake—Part 47: Polysilicon production
- GB/T 39137-2020 Determination for the orientation of refractory metal single crystal
- GB/T 20230-2022 Indium phosphide single crystal
- GB/T 20229-2022 Gallium phosphide single crystal
- GB/T 20228-2021 Gallium arsenide single crystal
- GB/T 39865-2021 Method for measuring refractive index of uniaxial optical crystals
- GB/T 12964-2018 Monocrystalline silicon polished wafers
- GB/T 26069-2022 Annealed monocrystalline silicon wafers
- GB/T 19346.3-2021 Methods of measurement of amorphous and nanocrystalline alloys—Part 3: AC magnetic properties of Fe-based amorphous strip using a single sheet specimen
- GB/T 25076-2018 Monocrystalline silicon for solar cell
- GB/T 36648-2018 Specification for TFT liquid crystal monomers
- GB/T 41325-2022 Low density crystal originated pit polished monocrystalline silicon wafers for integrated circuit
- GB/T 18910.201-2021 Liquid crystal display devices—Part 20-1: Visual inspection—Monochrome liquid crystal display cells
- GB/T 36647-2018 Specification for liquid crystal monomers
- GB/T 12965-2018 Monocrystalline silicon as cut wafers and lapped wafers
- GB/T 26071-2018 Monocrystalline silicon wafers for solar cells
- GB/T 37418-2019 Lutetium oxyorthosilicate, lutetium-yttrium oxyorthosilicate scintillation single crystals
- GB/T 18910.202-2021 Liquid crystal display devices—Part 20-2: Visual inspection—Monochrome matrix liquid crystal display modules
轻工业部, single crystal polycrystalline
工业和信息化部, single crystal polycrystalline
- YS/T 724-2016 Silicon powder for polycrystalline silicon
- YS/T 1359-2020 Lithium tantalate polycrystalline powder
- YS/T 1195-2017 Silicon tetrachloride, a by-product of polysilicon
- YS/T 1500-2021 Polycrystalline silicon prepares silver plate for furnace lining
- SJ/T 2268-2018 Gyromagnetic polycrystalline ferrite material series
- YS/T 1590-2022 Polycrystalline silicon industry green factory evaluation requirements
- XB/T 520-2021 Cerium-doped Gadolinium Gallium Aluminum Garnet Polycrystalline Scintillator
- YS/T 1290-2018 Determination of silane content in polycrystalline silicon production tail gas by gas chromatography
- JC/T 2417-2017 Lithium tetraborate piezoelectric single crystal material
- YS/T 1182-2016 Germanium single crystal safety production specifications
中华人民共和国国家质量监督检验检疫总局、中国国家标准化管理委员会, single crystal polycrystalline
- GB/T 25074-2017 Solar-grade polycrystalline silicon
- GB/T 34210-2017 Test method for determining the orientation of sapphire single crystal
- GB/T 33236-2016 Polycrystalline silicon—Determination of trace elements—Glow discharge mass spectrometry method
- GB/T 35309-2017 Practice for evaluation of granular polysilicon by melter-zoner and spectroscopies
RU-GOST R, single crystal polycrystalline
- GOST 19658-1981 Monocrystalline silicon in ingots. Specifications
- GOST 16153-1980 Monocrystalline germanium. Specifications
- GOST R IEC 61747-20-1-2017 Liquid crystal display devices. Part 20-1. Visual inspection. Monochrome liquid crystal display cells (excluding all active matrix liquid crystal display cells)
- GOST R IEC 61747-3-2017 Liquid crystal display devices. Part 3. Liquid crystal display (LCD) cells. Sectional specification
- GOST R 57549-2017 Vacuum induction melting for obtaining products with polycrystalline structure. Technical requirements
Japanese Industrial Standards Committee (JISC), single crystal polycrystalline
- JIS B 4133:1983 Polycrystalline diamond dies for wire drawing
- JIS C 6760:2014 Single crystal wafers for surface acoustic wave (SAW) device applications .Specifications and measuring methods
Hebei Provincial Standard of the People's Republic of China, single crystal polycrystalline
Yunnan Provincial Standard of the People's Republic of China, single crystal polycrystalline
- DB53/T 499-2013 Trichlorosilane for polysilicon
- DB53/T 500-2013 Determination of trichlorosilane component content for polysilicon by gas chromatography
- DB53/T 618-2014 Determination of Hydrogenation Tail Gas Component Content in Polysilicon Production by Gas Chromatography
- DB53/T 747-2016 Determination of Hydrogen Chloride Content in Hydrogen Recovered from Polysilicon Production Gas Chromatography
Military Standard of the People's Republic of China-General Armament Department, single crystal polycrystalline
- GJB 582-1988 Polycrystalline magnesium fluoride for lenses
- GJB 582A-2020 Specification for polycrystalline magnesium fluoride for lenses
- GJB 393-1987 Polycrystalline magnesium fluoride hood for air-to-air missiles
- GJB 393B-2015 Specification for polycrystalline magnesium fluoride fairings for missiles
- GJB 393A-1995 Specification for polycrystalline magnesium fluoride fairings for missiles
- GJB 8715-2015 Specification for hot-pressed polycrystalline magnesium fluoride flat sheets for missile applications
- GJB 8714-2015 Specification for polycrystalline zinc sulfide fairing materials for missiles
- GJB 394-1987 Test method for polycrystalline magnesium fluoride hoods for air-to-air missiles
- GJB 2917-1997 Indium Phosphide Single Wafer Specification
- GJB 3076A-2021 Gallium Phosphide Single Chip Specification
- GJB 3076-1997 Gallium Phosphide Single Chip Specification
- GJB 2917A-2018 Indium Phosphide Single Wafer Specification
- GJB 2917A-2004 Indium Phosphide Single Wafer Specification
- GJB 1926-1994 Gallium Arsenide Single Crystal Material Specification
- GJB 10343-2021 Specification for polished gallium antimonide single crystal wafers
- GJB 10342-2021 Specification for polished indium antimonide single crystal wafers
- GJB 1927-1994 Gallium arsenide single crystal material testing method
- GJB 1927A-2021 Gallium arsenide single crystal material testing method
HU-MSZT, single crystal polycrystalline
Defense Logistics Agency, single crystal polycrystalline
- DLA SMD-5962-87711 REV A-2001 MICROCIRCUIT, DIGITAL, BIPOLAR, TTL, DUAL MONOSTABLE MULTIVIBRATOR, MONOLITHIC SILICON
- DLA SMD-5962-85508 REV C-2005 MICROCIRCUIT, DIGITAL, BIPOLAR, LOW-POWER SCHOTTKY, TTL, MULTIPLEXER, MONOLITHIC SILICON
- DLA SMD-5962-97553 REV A-2006 MICROCIRCUIT, DIGITAL, BIPOLAR, TTL, MONOSTABLE MULTIVIBRATOR, MONOLITHIC SILICON
- DLA MIL-M-38510/314 C VALID NOTICE 1-2008 MICROCIRCUITS, DIGITAL, LOW-POWER SCHOTTKY, TTL, MONOSTABLE MULTIVIBRATORS, MONOLITHIC SILICON
- DLA SMD-5962-87533 REV B-2001 MICROCIRCUIT, DIGITAL, ADVANCED LOW POWER SCHOTTKY TTL, UNIVERSAL MULTIPLEXER, MONOLITHIC SILICON
- DLA SMD-5962-85096 REV E-2005 MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED LOW-POWER SCHOTTKY TTL, MULTIPLEXER, MONOLITHIC SILICON
- DLA SMD-5962-85097 REV F-2005 MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED LOW-POWER SCHOTTKY, TTL, MULTIPLEXERS, MONOLITHIC SILICON
- DLA SMD-5962-86869 REV C-2006 MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED LOW POWER SCHOTTKY TTL, MULTIPLEXER, MONOLITHIC SILICON
- DLA MIL-M-38510/326 C VALID NOTICE 1-2008 Microcircuits, Digital, Low-Power Schottky TTL, Demultiplexers, Monolithic Silicon
- DLA SMD-5962-97582 REV B-2006 MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY TTL, 3-LINE TO 8-LINE DECODERS/DEMULTIPLEXERS, MONOLITHIC SILICON
- DLA SMD-5962-97583 REV B-2006 MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY TTL, DUAL 1-OF-4 DATA SELECTORS/MULTIPLEXERS, MONOLITHIC SILICON
- DLA SMD-5962-88625 REV C-2008 MICROCIRCUIT, DIGITAL, BIPOLAR, ALS SCHOTTKY TTL, QUADRUPLE, 1 OF 2 DATA SELECTORS/MULTIPLEXERS, MONOLITHIC SILICON
- DLA SMD-5962-87716 REV A-2000 MICROCIRCUIT, LINEAR, 8-CHANNEL, JFET ANALOG MULTIPLEXER, MONOLITHIC SILICON
- DLA SMD-5962-87717 REV B-2002 MICROCIRCUIT, LINEAR, 16-CHANNEL JFET ANALOG MULTIPLEXER, MONOLITHIC SILICON
- DLA SMD-5962-97530-1998 MICROCIRCUIT, DIGITAL, 1394-1995 GENERAL-PURPOSE LINK-LAYER CONTROLLER, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
- DLA MIL-PRF-3098/79 F-2009 CRYSTAL UNIT, QUARTZ, CR104/U
- DLA MIL-PRF-3098/85 D-2009 CRYSTAL UNIT, QUARTZ, CR109/U
- DLA MIL-PRF-3098/93 C-2009 CRYSTAL UNIT, QUARTZ, CR117/U
- DLA MIL-PRF-3098/102 D-2009 CRYSTAL UNIT, QUARTZ, CR125/U
- DLA MIL-PRF-3098/106 D-2009 CRYSTAL UNIT, QUARTZ, CR127/U
- DLA MIL-PRF-3098/114 D-2009 CRYSTAL UNIT, QUARTZ, CR135/U
- DLA MIL-PRF-3098/123 D-2009 CRYSTAL UNIT, QUARTZ, CR142/U
- DLA MIL-PRF-3098/129 D-2009 CRYSTAL UNIT, QUARTZ, CR148/U
- DLA SMD-5962-96751 REV A-2003 MICROCIRCUIT, DIGITAL, BIPOLAR, LOW-POWER SCHOTTKY TTL, DUAL J-K FLIP-FLOPS WITH CLEAR, MONOLITHIC SILICON
- DLA SMD-5962-97562 REV A-2006 MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY, TTL, OCTAL D-TYPE EDGE-TRIGGERED FLIP-FLOPS WITH 3-STATE OUTPUTS, MONOLITHIC SILICON
- DLA SMD-5962-87698 REV A-2003 MICROCIRCUIT, DIGITAL, ADVANCED CMOS, DUAL 4-INPUT MULTIPLEXER, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
- DLA SMD-5962-87718 REV A-2000 MICROCIRCUIT, LINEAR, 4-CHANNEL DIFFERENTIAL JFET ANALOG MULTIPLEXER, MONOLITHIC SILICON
- DLA SMD-5962-87554 REV E-2004 MICROCIRCUIT, DIGITAL, CMOS, 1-OF-8 DECODER/DEMULTIPLEXER, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
- DLA SMD-5962-97632 REV A-2007 MICROCIRCUIT, DIGITAL, ADVANCED LOW POWER SCHOTTKY TTL, DUAL 4-LINE TO 1-LINE DATA SELECTORS/MULTIPLEXERS, MONOLITHIC SILICON
- DLA SMD-5962-95537 REV A-2001 MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY TTL, QUADRUPLE D-TYPE FLIP-FLOPS WITH CLEAR, MONOLITHIC SILICON
- DLA QPL-3098-92-2008 CRYSTAL UNITS, QUARTZ, GENERAL SPECIFICATION FOR
- DLA QPL-3098-93-2010 CRYSTAL UNITS, QUARTZ, GENERAL SPECIFICATION FOR
- DLA QPL-3098-95-2010 CRYSTAL UNITS, QUARTZ, GENERAL SPECIFICATION FOR
- DLA QPL-3098-97-2013 CRYSTAL UNITS, QUARTZ, GENERAL SPECIFICATION FOR
- DLA QPL-3098-98-2013 CRYSTAL UNITS, QUARTZ, GENERAL SPECIFICATION FOR
- DLA QPL-3098-99-2013 CRYSTAL UNITS, QUARTZ, GENERAL SPECIFICATION FOR
- DLA SMD-5962-87553 REV B-2005 MICROCIRCUIT, DIGITAL, ADVANCED CMOS, DUAL 1-OF-4 DECODER/DEMULTIPLEXER, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
- DLA SMD-5962-91732-1993 MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, 3-TO-8 LINE DECODER/DEMULTIPLEXOR, TTL COMPATIBLE, MONOLITHIC SILICON
- DLA SMD-5962-90702 REV A-2006 MICROCIRCUIT, DIGITAL, HIGH SPEED CMOS, QUAD 2-INPUT NONINVERTING MULTIPLEXER, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
- DLA SMD-5962-90703 REV A-2006 MICROCIRCUIT, DIGITAL, HIGH SPEED CMOS, QUAD 2-INPUT INVERTING MULTIPLEXER, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
- DLA MIL-M-38510/114 B VALID NOTICE 1-2008 MICROCIRCUITS, LINEAR, BI-FET OPERATIONAL AMPLIFIERS, MONOLITHIC SILICON
- DLA SMD-5962-97549-1997 MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY, TTL, OCTAL D-TYPE EDGE-TRIGGERED FLIP-FLOPS W/3- STATE OUTPUTS, MONOLITHIC SILICON
Jiangxi Provincial Standard of the People's Republic of China, single crystal polycrystalline
- DB36/ 652-2012 The norm of energy consumption per unit product of polysilicon
- DB36/ 771-2013 Energy consumption quota per unit product of Czochralski monocrystalline silicon
Association Francaise de Normalisation, single crystal polycrystalline
- NF C26-400:1971 POLYCRYSTALLINE ALUMINA CERAMICS. METHODS OF TEST.
- NF ISO 16463:2014 Plaquettes brasées en diamant polycristallin - Dimensions, types
- NF E66-314:2004 Polycrystalline diamond inserts, tipped - Dimensions, types.
- NF E66-314*NF ISO 16463:2014 Polycristalline diamond inserts, tipped - Dimensions, types
- NF A09-280-3*NF EN 13925-3:2005 Non destructive testing - X-ray diffraction from polycrystalline and amorphous materials - Part 3 : instruments.
- NF A09-280-2*NF EN 13925-2:2003 Non-destructive testing - X-ray diffraction from polycristalline and amorphous materials - Part 2 : procedures
- NF EN 1330-11:2007 Essais non destructifs - Terminologie - Partie 11 : diffraction des rayons X de matériaux polycristallins et amorphes
- NF A09-280-1*NF EN 13925-1:2003 Non-destructive testing - X-ray diffraction from polycrystalline and amorphous material - Part 1 : general principles.
- NF EN 13925-2:2003 Essais non destructifs - Diffraction des rayons X appliquée aux matériaux polycristallins et amorphes - Partie 2 : procédures
- NF EN 13925-3:2005 Essais non destructifs - Diffraction des rayons X appliquée aux matériaux polycristallins et amorphes - Partie 3 : appareillage
- NF EN 13925-1:2003 Essais non destructifs - Diffraction des rayons X appliquée aux matériaux polycristallins et amorphes - Partie 1 : principes généraux
- NF A09-020-11*NF EN 1330-11:2007 Non-destructive testing - Terminology - Part 11 : Terms used in X-ray diffraction from polycrystalline and amorphous materials.
- NF C93-616:2013 Single Crystal wafers for surface acoustic wave (SAW) device applications - Specifications and measuring methods
- NF EN 61747-3:2007 Dispositifs d'affichage à cristaux liquides - Partie 3 : cellules d'affichage à cristaux liquides (LCD) - Spécification intermédiaire
- NF C93-616*NF EN 62276:2018 Single crystal wafers for surface acoustic wave (SAW) device applications - Specifications and measuring methods
- NF EN 61747-3-1:2006 Dispositifs d'affichage à cristaux liquides - Partie 3-1 : cellules d'affichage à cristaux liquides (LCD) - Spécification particulière cadre
British Standards Institution (BSI), single crystal polycrystalline
- BS EN 13925-2:2003(2008) Non-destructive testing - X-ray diffraction from polycrystalline and amorphous materials - Procedures
- BS EN 13925-3:2005(2009) Non-destructive testing - X-ray diffraction from polycrystalline and amorphous materials - Instruments
- BS EN 13925-2:2003 Non-destructive testing - X-ray diffraction from polycrystalline and amorphous materials - Procedures
- BS EN 13925-3:2005 Non-destructive testing - X-ray diffraction from polycrystalline and amorphous materials - Instruments
- BS EN 13925-1:2003(2008) Non-destructive testing - X-ray diffraction from polycrystalline and amorphous materials - General principles
- BS EN 13925-1:2003 Non-destructive testing - X-ray diffraction from polycrystalline and amorphous materials - General principles
- BS ISO 16463:2004 Polycrystalline diamond inserts, tipped - Dimensions, types
- BS ISO 16463:2014 Polycristalline diamond inserts, tipped. Dimensions, types
- 13/30276532 DC BS EN 61747-20-1. Liquid crystal display devices. Part 20-1. Visual inspection. Monochrome liquid crystal display cells (Excluding all active matrix liquid crystal display cells)
- BS EN 1330-11:2007 Non-destructive testing - Terminology - Terms used in X-ray diffraction from polycrystalline and amorphous materials
- BS EN 61747-2-1:1998 Liquid crystal and solid-state display devices. Passive matrix monochrome LCD modules. Blank detail specification
- BS EN 61747-2-1:2013 Liquid crystal display devices. Passive matrix monochrome LCD modules. Blank detail specification
ANSI - American National Standards Institute, single crystal polycrystalline
- Z80.12-2007 Ophthalmics - Multifocal Intraocular Lenses (VC)
Professional Standard - Electron, single crystal polycrystalline
- SJ 2268-1983 Series of gyromagnetic multi-crystal materials made of magnetic oxides
- SJ/T 11500-2015 Test method for measuring crystallographic orientation of monocrystalline silicon carbide
- SJ/T 11501-2015 Test method for determining crystal type of monocrystalline silicon carbide
- SJ 3244.3-1989 Methods of measurement for crystal-orientation of single crystal of Gallium arsenide and Indium phosphide
- SJ/Z 2655-1986 Collection of single crystal Germaninm defects
- SJ 20607-1996 Specificatiion for molybdenate crystal
- SJ 20444-1994 Specification for Lithium Niobate singlecrystal
- SJ 3241-1989 Gallium arsenide single-crystal bar and wafer
- SJ 3243-1989 Indium phosphide single-crystal bar and wafers
- SJ/T 10173-1991 TDA75 single crystalline silicon solar cell
- SJ 20606-1996 Specification for tellurium dioxide single crystal
- SJ/T 10333-1993 Methods of measurement for uni-junction transistors
- SJ/T 11450-2013 Single Crystal Furnace Energy Consumption Specifications
- SJ/T 11854-2022 Czochralski monocrystalline silicon furnace for photovoltaic
- SJ/T 11502-2015 Specification for polished monocrystalline silicon carbide wafers
- SJ/T 11505-2015 Sapphire single crystal polished wafers specification
- SJ/T 11853-2022 Positive pressure suspended zone melting single crystal silicon furnace
- SJ 2572-1985 Silicon monocrystalline rods and sheets for solar cells
- SJ/T 11864-2022 Semi-insulating silicon carbide single crystal substrate
Professional Standard - Building Materials, single crystal polycrystalline
- JC/T 2143-2012 Ceramic materials based on tetragonal zirconia
- JC/T 2349-2015 Si<下标3>N<下标4> ceramic insulation components for polycrystalline silicon production
- JC/T 2067-2011 Fused Silica ceramic crucible for solar poly-crystalline silicon crystal growth
- JC/T 1048-2007 Fused quartz crucibles for single crystal silicon growth
- JC/T 1048-2018 Quartz crucible for single crystal silicon growth
Professional Standard - Medicine, single crystal polycrystalline
- YY 0290.9-2010 Ophthalmic implants.Intraocular lenses.Part 9 :Multifocal intraocular lenses
German Institute for Standardization, single crystal polycrystalline
- DIN V VDE V 0126-18-3:2007 Solar wafers - Part 3: Alkaline corrosion damage of crystalline silicon wafers - Method of determining the corrosion rate of mono and multi crystalline silicon wafers (as cut)
- DIN EN 13925-2:2003 Non-destructive testing - X-ray diffraction from polycristalline and amorphous material - Part 2: Procedures; German version EN 13925-2:2003
- DIN EN 13925-1:2003 Non-destructive testing - X-ray diffraction from polycristalline and amorphous material - Part 1: General principles; German version EN 13925-1:2003
- DIN EN 13925-3:2005 Non-destructive testing - X-ray diffraction from polycrystalline and amorphous materials - Part 3: Instruments; German version EN 13925-3:2005
- DIN EN 13925-3:2005-07 Non-destructive testing - X-ray diffraction from polycrystalline and amorphous materials - Part 3: Instruments; German version EN 13925-3:2005
- DIN EN 13925-2:2003-07 Non-destructive testing - X-ray diffraction from polycristalline and amorphous material - Part 2: Procedures; German version EN 13925-2:2003
- DIN ISO 16463:2005 Polycrystalline diamond inserts, tipped - Dimensions, types (ISO 16463:2004);English version of DIN ISO 16463:2005
- DIN EN 13925-1:2003-07 Non-destructive testing - X-ray diffraction from polycristalline and amorphous material - Part 1: General principles; German version EN 13925-1:2003
- DIN EN 1330-11:2007-09 Non-destructive testing - Terminology - Part 11: Terms used in X-ray diffraction from polycristalline and amorphous materials; Trilingual version EN 1330-11:2007
- DIN ISO 16463:2015 Polycrystalline diamond inserts, tipped - Dimensions, types (ISO 16463:2014)
- DIN EN 1330-11:2007 Non-destructive testing - Terminology - Part 11: Terms used in X-ray diffraction from polycristalline and amorphous materials; Trilingual version EN 1330-11:2007
- DIN EN IEC 60122-4:2019-10 Quartz crystal units of assessed quality - Part 4: Crystal units with thermistors (IEC 60122-4:2019); German version EN IEC 60122-4:2019
- DIN EN 60444-9:2007-12 Measurement of quartz crystal unit parameters - Part 9: Measurement of spurious resonances of piezoelectric crystal units (IEC 60444-9:2007); German version EN 60444-9:2007
- DIN EN IEC 62276:2023-05 Single crystal wafers for surface acoustic wave (SAW) device applications - Specifications and measuring methods (IEC 49/1401/CD:2022); Text in German and English / Note: Date of issue 2023-04-28*Intended as replacement for DIN EN 62276 (2017-08).
- DIN EN 62276:2017-08 Single crystal wafers for surface acoustic wave (SAW) device applications - Specifications and measuring methods (IEC 62276:2016); German version EN 62276:2016 / Note: DIN EN 62276 (2013-08) remains valid alongside this standard until 2019-11-28.
- DIN EN 120007:1993-06 Blank detail specification: Liquid Crystal Displays; monochrome LCDs without electronic circuit; German version EN 120007:1992
- DIN EN 120007:1993 Blank detail specification: Liquid Crystal Displays; monochrome LCDs without electronic circuit; German version EN 120007:1992
National Metrological Verification Regulations of the People's Republic of China, single crystal polycrystalline
- JJG 629-2014 Polycrystalline X-Ray Diffractometers
- JJG 629-1989 Verification Regulation for Polycrystalline X-Ray Diffractometer
- JJG(地质) 1014-1990 Verification Regulations for Polycrystalline X-ray Diffractometer
- JJG 48-2004 Standard Slice of Single Crystal Silicon Resistivity
Professional Standard - Non-ferrous Metal, single crystal polycrystalline
- YS/T 1061-2015 Silicon core for polysilicon by improved siemens method
- YS/T 554-2007 Lithium niobate single crystals
- YS/T 42-2010 Lithium tantalate single crystals
- YS/T 554-2006 Lithium niobate single crystal
- YS/T 1167-2016 Monocrystalline silicon etched wafers
- YS/T 14-2015 Method for measuring the thickness of heteroepitaxial layer and silicon polycrystalline layer
- YS/T 14-1991 Method for measuring the thickness of heteroepitaxial layer and silicon polycrystalline layer
- YS/T 983-2014 Test method for measuring composition of polysilicon deposition reactor and TCS to STC converter vent gas
- YS 783-2012 The norm of energy consumption per unit product of infrared germanium single crystal
IN-BIS, single crystal polycrystalline
Professional Standard - Education, single crystal polycrystalline
- JY/T 0587-2020 General Principles of Polycrystal X-ray Diffraction Methods
- JY/T 009-1996 General Principles of Rotating Target Polycrystal X-ray Derivation Method
Professional Standard - Machinery, single crystal polycrystalline
- JB/T 10439-2004 Crystal growing furnaces TDR-series crystal growing furnaces by Czochralski method
- JB/T 12542-2015 Superabrasive.Detonation polycrystalline diamond powders
- JB/T 5633-1991 Single-crystal furnace. Grading of energy consumption
- JB/T 7996-1999 Common abrasive Single alundum
- JB/T 7996-2012 Conventional abrasive.Monocrystalline fused alumina
- JB/T 12068-2014 TDR-Z germanium mono-crystal growing furnace by Czochralski method
- JB/T 5203-1991 Monocrystalline fused alumina Method for chemical analysis
- JB/T 5203-2012 Chemical analysis methods for monocrystalline fused alumina
Danish Standards Foundation, single crystal polycrystalline
- DS/EN ISO 11979-9:2007 Ophthalmic implants - Intraocular lenses - Part 9: Multifocal intraocular lenses
- DS/EN 13925-2:2003 Non-destructive testing - X-ray diffraction from polycrystalline and amorphous materials - Part 2: Procedures
- DS/EN 13925-3:2005 Non destructive testing - X ray diffraction from polycrystalline and amorphous materials - Part 3: Instruments
- DS/EN 13925-1:2003 Non-destructive testing - X-ray diffraction from polycrystalline and amorphous material - Part 1: General principles
- DS/EN 1330-11:2007 Non-destructive testing - Terminology - Terms used in X-ray diffraction from polycrystalline and amorphous materials
- DS/EN 61747-3:2007 Liquid crystal display devices -- Part 3: Liquid crystal display (LCD) cells - Sectional specification
- DS/EN 60444-9:2007 Measurement of quartz crystal unit parameters -- Part 9: Measurement of spurious resonances of piezoelectric crystal units
- DS/EN 62276:2013 Single crystal wafers for surface acoustic wave (SAW) device applications - Specifications and measuring methods
- DS/EN 61747-3-1:2007 Liquid crystal display devices - Part 3-1: Liquid crystal display (LCD) cells - Blank detail specification
未注明发布机构, single crystal polycrystalline
SE-SIS, single crystal polycrystalline
U.S. Military Regulations and Norms, single crystal polycrystalline
- ARMY QPL-55681-QPD-2010 Capacitor, Chip, Multiple Layer, Fixed, Ceramic Dielectric
- ARMY MIL-PRF-3098/104 F-2013 CRYSTAL UNIT, QUARTZ, CR102/U
- ARMY MIL-PRF-3098/105 H-2013 CRYSTAL UNIT, QUARTZ, CR103/U
- ARMY MIL-PRF-3098/80 G-2013 CRYSTAL UNIT, QUARTZ, CR105/U
- ARMY MIL-PRF-3098/88 H-2013 CRYSTAL UNIT, QUARTZ, CR112/U
- ARMY MIL-PRF-3098/86 F-2013 CRYSTAL UNIT, QUARTZ, CR110/U
- ARMY MIL-PRF-3098/82 E-2013 CRYSTAL UNIT, QUARTZ, CR106/U
- ARMY MIL-PRF-3098/83 G-2013 CRYSTAL UNIT, QUARTZ, CR107/U
- ARMY MIL-PRF-3098/89 E-2013 CRYSTAL UNIT, QUARTZ, CR113/U
- ARMY MIL-PRF-3098/92 F-2013 CRYSTAL UNIT, QUARTZ, CR116/U
- ARMY MIL-PRF-3098/100 E-2013 CRYSTAL UNIT, QUARTZ, CR123/U
- ARMY MIL-PRF-3098/99 E-2013 CRYSTAL UNIT, QUARTZ, CR122/U
- ARMY MIL-PRF-3098/108 E-2013 CRYSTAL UNIT, QUARTZ, CR128/U
- ARMY MIL-PRF-3098/101 D-2013 CRYSTAL UNIT, QUARTZ, CR124/U
- ARMY MIL-PRF-3098/113 E-2011 CRYSTAL UNIT, QUARTZ, CR134/U
- ARMY MIL-PRF-3098/115 E-2011 CRYSTAL UNIT, QUARTZ, CR136/U
- ARMY MIL-PRF-3098/116 E-2011 CRYSTAL UNIT, QUARTZ, CR137/U
- ARMY MIL-PRF-3098/120 E-2011 CRYSTAL UNIT, QUARTZ, CR131/U
- ARMY MIL-PRF-3098/132 E-2011 CRYSTAL UNIT, QUARTZ, CR151/U
- ARMY MIL-PRF-3098/137 D-2011 CRYSTAL UNIT, QUARTZ, CR157/U
- ARMY MIL-PRF-3098 K-2010 CRYSTAL UNITS, QUARTZ GENERAL SPECIFICATION FOR
- ARMY MIL-PRF-3098 K (1)-2011 CRYSTAL UNITS, QUARTZ GENERAL SPECIFICATION FOR
- ARMY MIL-PRF-3098 K (1) SUPP 1-2013 CRYSTAL UNITS, QUARTZ GENERAL SPECIFICATION FOR
European Committee for Standardization (CEN), single crystal polycrystalline
- EN 13925-2:2003 Non-destructive testing - X-ray diffraction from polycrystalline and amorphous materials - Part 2: Procedures
- EN 13925-3:2005 Non destructive testing - X ray diffraction from polycrystalline and amorphous materials - Part 3: Instruments
- EN 1330-11:2007 Non-destructive testing - Terminology - Terms used in X-ray diffraction from polycrystalline and amorphous materials
International Organization for Standardization (ISO), single crystal polycrystalline
- ISO 11979-9:2006 Ophthalmic implants - Intraocular lenses - Part 9: Multifocal intraocular lenses
- ISO 16463:2004 Polycristalline diamond inserts, tipped - Dimensions, types
- ISO 16463:2014 Polycristalline diamond inserts, tipped - Dimensions, types
- ISO/TTA 3:2001 Polycrystalline materials - Determination of residual stresses by neutron diffraction
- ISO 11979-9:2006/Amd 1:2014 Ophthalmic implants - Intraocular lenses - Part 9: Multifocal intraocular lenses; Amendment 1
Lithuanian Standards Office , single crystal polycrystalline
- LST EN 13925-3-2005 Non destructive testing - X ray diffraction from polycrystalline and amorphous materials - Part 3: Instruments
- LST EN 13925-2-2004 Non-destructive testing - X-ray diffraction from polycrystalline and amorphous materials - Part 2: Procedures
- LST EN 13925-1-2004 Non-destructive testing - X-ray diffraction from polycrystalline and amorphous material - Part 1: General principles
- LST EN 1330-11-2007 Non-destructive testing - Terminology - Terms used in X-ray diffraction from polycrystalline and amorphous materials
- LST EN ISO 11979-9:2007 Ophthalmic implants - Intraocular lenses - Part 9: Multifocal intraocular lenses (ISO 11979-9:2006)
- LST EN 61747-3-2007 Liquid crystal display devices - Part 3: Liquid crystal diplay (LCD) cells - Sectional specification (IEC 61747-3:2006)
AENOR, single crystal polycrystalline
- UNE-EN 13925-2:2004 Non-destructive testing - X-ray diffraction from polycrystalline and amorphous materials - Part 2: Procedures
- UNE-EN 13925-3:2006 Non destructive testing - X ray diffraction from polycrystalline and amorphous materials - Part 3: Instruments
- UNE-EN 13925-1:2006 Non-destructive testing - X-ray diffraction from polycrystalline and amorphous material - Part 1: General principles
- UNE-EN ISO 11979-9:2007 Ophthalmic implants - Intraocular lenses - Part 9: Multifocal intraocular lenses (ISO 11979-9:2006)
- UNE-EN ISO 11979-9:2007/A1:2014 Ophthalmic implants - Intraocular lenses - Part 9: Multifocal intraocular lenses (ISO 11979-9:2006/Amd 1:2014)
- UNE-EN 1330-11:2008 Non-destructive testing - Terminology - Part 11: Terms used in X-ray diffraction from polycrystalline and amorphous materials
Military Standard of the People's Republic of China-Commission of Science,Technology and Industry for National Defence, single crystal polycrystalline
- GJB 6466-2008 Specification for hot-pressed polycrystalline magnesium fluoride plate for missiles
- GJB 5907-2006 Specification for polycrystal zinc sulfide dome materials for missiles
American Society for Testing and Materials (ASTM), single crystal polycrystalline
- ASTM F1723-96 Standard Practice for Evaluation of Polycrystalline Silicon Rods by Float-Zone Crystal Growth and Spectroscopy
- ASTM E2627-13(2019) Standard Practice for Determining Average Grain Size Using Electron Backscatter Diffraction (EBSD) in Fully Recrystallized Polycrystalline Materials
- ASTM E2627-13 Standard Practice for Determining Average Grain Size Using Electron Backscatter Diffraction (EBSD) in Fully Recrystallized Polycrystalline Materials
- ASTM E2627-10 Standard Practice for Determining Average Grain Size Using Electron Backscatter Diffraction (EBSD) in Fully Recrystallized Polycrystalline Materials
- ASTM F847-94(1999) Standard Test Methods for Measuring Crystallographic Orientation of Flats on Single Crystal Silicon Wafers by X-Ray Techniques
Professional Standard - Aerospace, single crystal polycrystalline
- QJ 2169-1991 Technical conditions for polycrystalline magnesium fluoride fairing with a diameter of 300mm
ESDU - Engineering Sciences Data Unit, single crystal polycrystalline
- ESDU 81027 A-1982 Lattice structures. Part 1: mean fluid forces on single and multiple plane frames.
CH-SNV, single crystal polycrystalline
Xinjiang Provincial Standard of the People's Republic of China, single crystal polycrystalline
- DB65/T 3486-2013 Infrared flaw detection method for solar-grade polysilicon block
- DB65/T 3485-2013 Measurement method for minority carrier lifetime of solar grade polysilicon block
International Electrotechnical Commission (IEC), single crystal polycrystalline
- IEC 63181-2:2020 LCD multi-screen display terminals - Part 2: Measuring methods
- IEC 60119:1960 Recommendation for polycrystalline semiconductor rectifier stacks and equipment
- IEC 60122-4:2019 Quartz crystal units of assessed quality - Part 4: Crystal units with thermistors
- IEC 61747-3:2015 Liquid crystal display devices - Part 3: Liquid crystal display (LCD) cells - Sectional specification
工业和信息化部/国家能源局, single crystal polycrystalline
- JB/T 12981-2016 Polycrystalline cubic boron nitride for superabrasive metal processing
ES-UNE, single crystal polycrystalline
- UNE-EN 168100:1993 SS: QUARTZ CRYSTAL UNITS. (Endorsed by AENOR in November of 1996.)
- UNE-EN 120007:1992 BDS: LIQUID CRISTAL DISPLAYS. MONOCHROME LCDS WITHOUT ELECTRONIC CIRCUIT. (Endorsed by AENOR in September of 1996.)
- UNE-EN 168200/A1:1993 SS: QUARTZ CRYSTAL UNITS (QUALIFICATION APPROVAL). (Endorsed by AENOR in September of 1996.)
- UNE-EN 168200:1993 SS: QUARTZ CRYSTAL UNITS (QUALIFICATION APPROVAL). (Endorsed by AENOR in September of 1996.)
- UNE-EN 62276:2016 Single crystal wafers for surface acoustic wave (SAW) device applications - Specifications and measuring methods (Endorsed by Asociación Española de Normalización in January of 2017.)
- UNE-EN 61747-3:2006 Liquid crystal display devices -- Part 3: Liquid crystal diplay (LCD) cells - Sectional specification (IEC 61747-3:2006). (Endorsed by AENOR in January of 2007.)
American National Standards Institute (ANSI), single crystal polycrystalline
- ANSI/ASTM D6058:2001 Practice for Determining Concentration of Airborne Single-Crystal Ceramic Whiskers in the Workplace Environment
IEC - International Electrotechnical Commission, single crystal polycrystalline
- IEC 61747-20-1:2015 Liquid crystal display devices - Part 20-1: Visual inspection - Monochrome liquid crystal display cells (excluding all active matrix liquid crystal display cells) (Edition 1.0)
- PAS 62276-2001 Single Crystal Wafers Applied for Surface Acoustic Wave Device - Specification and Measuring Method (Edition 1.0)
CEN - European Committee for Standardization, single crystal polycrystalline
- EN IEC 60122-4:2019 Quartz crystal units of assessed quality - Part 4: Crystal units with thermistors
KR-KS, single crystal polycrystalline
Professional Standard - Aviation, single crystal polycrystalline
- HB 6742-1993 Determination of Crystal Orientation of Single Crystal Blades by X-ray Backblow Laue Photography
- HB 7762-2005 Specification for master alloys of directionally solidified and single crystal superalloys for aeroengines
Professional Standard - Ferrous Metallurgy, single crystal polycrystalline
- YB 1603-1983 Silicon single crystal cutting and grinding discs
机械电子工业部, single crystal polycrystalline
- JB 5203-1991 Single crystal corundum chemical analysis method
IT-UNI, single crystal polycrystalline
Inner Mongolia Provincial Standard of the People's Republic of China, single crystal polycrystalline
- DB15/T 1241-2017 Determination of silane content in tail gas of polysilicon produced by silane method Gas chromatography
- DB15/T 2234-2021 Energy consumption quota per unit product of Czochralski monocrystalline silicon
Association of German Mechanical Engineers, single crystal polycrystalline
CENELEC - European Committee for Electrotechnical Standardization, single crystal polycrystalline
- EN 62276:2013 Single crystal wafers for surface acoustic wave (SAW) device applications - Specifications and measuring methods
European Committee for Electrotechnical Standardization(CENELEC), single crystal polycrystalline
- EN 62276:2016 Single crystal wafers for surface acoustic wave (SAW) device applications - Specifications and measuring methods
IECQ - IEC: Quality Assessment System for Electronic Components, single crystal polycrystalline
- QC 720200-1998 Liquid Crystal and Solid State Display Devices - Part 3: Sectional Specification for Liquid Crystal Display (LCD) Cells