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silicon substrate
silicon substrate, Total:22 items.
In the international standard classification, silicon substrate involves: Semiconductor devices, Semiconducting materials, Materials for aerospace construction, Non-ferrous metals, Analytical chemistry, Ceramics.
Group Standards of the People's Republic of China, silicon substrate
- T/CASAS 004.1-2018 The Terminology for Defects in both 4H-SiC Substrates and Epilayers
- T/CASAS 004.2-2018 The Metallographs Collection for Defects in both 4H-SiC Substrates and Epilayers
- T/CASAS 025-2023 8-inch silicon carbide wafer reference marking and dimensions
- T/CASAS 014-2021 Measuring method for basal plane bending of SiC substrate — High resolution X-ray diffractometry
Professional Standard - Electron, silicon substrate
- SJ/T 11865-2022 Φ150 mm n-type silicon carbide substrate for power devices
- SJ/T 11493-2015 Test method for measuring nitrogen concentration in silicon substrates by secondary ion mass spectrometry
- SJ/T 11869-2022 Detailed specifications for silicon substrate white light power light emitting diode chips
- SJ/T 11868-2022 Detailed specifications for silicon substrate blue power light emitting diode chips
- SJ/T 11867-2022 Detailed specifications for silicon substrate blue light low-power light-emitting diode chips
- SJ/T 11498-2015 Test method for measuring oxygen contamination in heavily doped silicon substrates by secondary ion mass spectrometry
- SJ/T 11866-2022 Semiconductor optoelectronic devices - Detailed specifications for silicon substrate white light power light emitting diodes
- SJ/T 11864-2022 Semi-insulating silicon carbide single crystal substrate
British Standards Institution (BSI), silicon substrate
- BS IEC 63229:2021 Semiconductor devices. Classification of defects in gallium nitride epitaxial film on silicon carbide substrate
- 18/30386543 DC BS EN 63229 Ed.1.0. Semiconductor devices. The classification of defects in gallium nitride epitaxial wafers on silicon carbide substrate
- 19/30404655 DC BS EN IEC 63229. Semiconductor devices. The classification of defects in gallium nitride epitaxial film on silicon carbide substrate
Society of Automotive Engineers (SAE), silicon substrate
General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China, silicon substrate
- GB/T 24580-2009 Test method for measuring Boron contamination in heavily doped n-type silicon substrates by secondary ion mass spectrometry
International Electrotechnical Commission (IEC), silicon substrate
- IEC 63229:2021 Semiconductor devices - Classification of defects in gallium nitride epitaxial film on silicon carbide substrate
Professional Standard - Non-ferrous Metal, silicon substrate
- YS/T 839-2012 Test method for measurement of insulator thickness and refractive index on silicon substrates by ellipsometry
American Society for Testing and Materials (ASTM), silicon substrate
- ASTM F576-00 Standard Test Method for Measurement of Insulator Thickness and Refractive Index on Silicon Substrates by Ellipsometry
International Organization for Standardization (ISO), silicon substrate
- ISO 23170:2022 Surface chemical analysis — Depth profiling — Non-destructive depth profiling of nanoscale heavy metal oxide thin films on Si substrates with medium energy ion scattering
Korean Agency for Technology and Standards (KATS), silicon substrate
- KS L 2107-1999 Testing methods for the adhesion of silica coating to the glass substrate