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silicon substrate

silicon substrate, Total:22 items.

In the international standard classification, silicon substrate involves: Semiconductor devices, Semiconducting materials, Materials for aerospace construction, Non-ferrous metals, Analytical chemistry, Ceramics.

Group Standards of the People's Republic of China, silicon substrate

• T/CASAS 004.1-2018 The Terminology for Defects in both 4H-SiC Substrates and Epilayers
• T/CASAS 004.2-2018 The Metallographs Collection for Defects in both 4H-SiC Substrates and Epilayers
• T/CASAS 025-2023 8-inch silicon carbide wafer reference marking and dimensions
• T/CASAS 014-2021 Measuring method for basal plane bending of SiC substrate — High resolution X-ray diffractometry

Professional Standard - Electron, silicon substrate

• SJ/T 11865-2022 Φ150 mm n-type silicon carbide substrate for power devices
• SJ/T 11493-2015 Test method for measuring nitrogen concentration in silicon substrates by secondary ion mass spectrometry
• SJ/T 11869-2022 Detailed specifications for silicon substrate white light power light emitting diode chips
• SJ/T 11868-2022 Detailed specifications for silicon substrate blue power light emitting diode chips
• SJ/T 11867-2022 Detailed specifications for silicon substrate blue light low-power light-emitting diode chips
• SJ/T 11498-2015 Test method for measuring oxygen contamination in heavily doped silicon substrates by secondary ion mass spectrometry
• SJ/T 11866-2022 Semiconductor optoelectronic devices - Detailed specifications for silicon substrate white light power light emitting diodes
• SJ/T 11864-2022 Semi-insulating silicon carbide single crystal substrate

British Standards Institution (BSI), silicon substrate

• BS IEC 63229:2021 Semiconductor devices. Classification of defects in gallium nitride epitaxial film on silicon carbide substrate
• 18/30386543 DC BS EN 63229 Ed.1.0. Semiconductor devices. The classification of defects in gallium nitride epitaxial wafers on silicon carbide substrate
• 19/30404655 DC BS EN IEC 63229. Semiconductor devices. The classification of defects in gallium nitride epitaxial film on silicon carbide substrate

Society of Automotive Engineers (SAE), silicon substrate

• SAE AMS3673B-1997 Cloth, Glass Aluminum Face, Silicone Rubber Back

General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China, silicon substrate

• GB/T 24580-2009 Test method for measuring Boron contamination in heavily doped n-type silicon substrates by secondary ion mass spectrometry

International Electrotechnical Commission (IEC), silicon substrate

• IEC 63229:2021 Semiconductor devices - Classification of defects in gallium nitride epitaxial film on silicon carbide substrate

Professional Standard - Non-ferrous Metal, silicon substrate

• YS/T 839-2012 Test method for measurement of insulator thickness and refractive index on silicon substrates by ellipsometry

American Society for Testing and Materials (ASTM), silicon substrate

• ASTM F576-00 Standard Test Method for Measurement of Insulator Thickness and Refractive Index on Silicon Substrates by Ellipsometry

International Organization for Standardization (ISO), silicon substrate

• ISO 23170:2022 Surface chemical analysis — Depth profiling — Non-destructive depth profiling of nanoscale heavy metal oxide thin films on Si substrates with medium energy ion scattering

Korean Agency for Technology and Standards (KATS), silicon substrate

• KS L 2107-1999 Testing methods for the adhesion of silica coating to the glass substrate

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