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Semiconductor discrete device gp and gt level gf411 type semiconductor green light emitting diode in detail

Semiconductor discrete device gp and gt level gf411 type semiconductor green light emitting diode in detail, Total:21 items.

In the international standard classification, Semiconductor discrete device gp and gt level gf411 type semiconductor green light emitting diode in detail involves: Semiconductor devices, Optoelectronics. Laser equipment.

Professional Standard - Electron, Semiconductor discrete device gp and gt level gf411 type semiconductor green light emitting diode in detail

• SJ 50033/6-1994 Semiconductor discrete device.Detail specification for semiconductor light green emitting diodes for type GF 411 of GP and GT classes
• SJ 50033/4-1994 Semiconductor discrete device.Detail specification for semiconductor red light emitting diodes for type GF 111 of GP and GT classes
• SJ 50033/5-1994 Semiconductor discrete device.Detail specification for semiconductor yellow light emitting diodes for type GF 311 of GP and GT classes
• SJ 50033/3-1994 Semiconductor discrete device.Detail specification for semiconductor opto-couplers for type GH21,GH22 and GH23 of GP,GT and GCT classes
• SJ 50033/139-1998 Semiconductor optoelectronic devices.Detail specification for green light-emitting diode for type GF4111
• SJ 50033/58-1995 Semiconductor optoelectronic device Detail specification for green light emitting diode for type GF413
• SJ 50033/142-1999 Semiconductor optoelectronic devices.Detail specification for type GF4112 green emitting diode
• SJ 20014-1992 Semiconductor discrete device.Detail specification for PNP silicon low-power transistor for type 3CG110GP、GT and GCT classes
• SJ/T 10947-1996 Detailed specifications for electronic components - FG341052 and FG343053 semiconductor green light emitting diodes
• SJ 50033/99-1995 Semiconductor optoelectronic devices.Detail specification for o/G double colour light emitting diode for type GF511
• SJ 20015-1992 Semiconductor discrete device.Detail specification for NPN silicon high-frequency low-power transistor for type 3DG130GP、GT and GCT classes
• SJ 20016-1992 Semiconductor discrete device.Detail specification for NPN silicon low-power hiht-reverse-voltage transistor for type 3DG182GP、GT and GCT classes
• SJ 20011-1992 Semiconductor discrete device.Detail specification for silicon N-channel deplition mode field-effect transistor of type CS1 GP, GT and GCT classes
• SJ 20012-1992 Semiconductor discrete device.Detail specification for silicon N-channel deplition mode field-effect transistor of type CS4. GP, GT and GCT classes
• SJ 20013-1992 Semiconductor discrete device.Detail specification for silicon N-channel deplition mode field-effect transistor of type CS10. GP, GT and GCT classes

Military Standard of the People's Republic of China-General Armament Department, Semiconductor discrete device gp and gt level gf411 type semiconductor green light emitting diode in detail

• GJB 33/3-1987 Detailed Specification for Semiconductor Discrete Devices Detailed Specification for GP, GT and GCT Grade 3DD3442 Type NPN Silicon Power Transistors
• GJB 33/2-1987 Detailed Specification for Semiconductor Discrete Devices Detailed Specification for GP, GT and GCT Grade 3DD3767 Type NPN Silicon Power Transistors
• GJB 33/1-1987 Detailed Specification for Semiconductor Discrete Devices Detailed Specification for GP, GT and GCT Grade 3DD3716 Type NPN Silicon Power Transistors
• GJB 33/6-1988 Detailed specifications for semiconductor discrete devices GP, GT and GCT grade 3CG2605 type PNP silicon low power transistors
• GJB 33/8-1988 Detailed specification for semiconductor discrete devices GP, GT and GCT grade 3DK2369A type NPN silicon low power switching transistor
• GJB 33/7-1988 Detailed specification for semiconductor discrete devices GP, GT and GCT grade 3CK2907 type PNP silicon low power switching transistor

Others:   Semiconductor discrete device gp and gt level gf411 type semiconductor green light emitting diode in detail.