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bipolar magnetic semiconductor

bipolar magnetic semiconductor, Total:265 items.

In the international standard classification, bipolar magnetic semiconductor involves: Semiconductor devices, Power transmission and distribution networks, Mechanical structures for electronic equipment, Optoelectronics. Laser equipment, Integrated Services Digital Network (ISDN), Integrated circuits. Microelectronics, Electrical engineering in general, Characteristics and design of machines, apparatus, equipment, Electromagnetic compatibility (EMC), Valves, Electricity. Magnetism. Electrical and magnetic measurements, Magnetic materials, Radiocommunications, Environmental testing, Electrical and electronic testing, Fibre optic communications, Metrology and measurement in general.

British Standards Institution (BSI), bipolar magnetic semiconductor

BS IEC 60747-7:2011 Semiconductor devices. Discrete devices. Bipolar transistors
BS IEC 60747-7:2010 Semiconductor devices. Discrete devices. Bipolar transistors
BS IEC 60747-7:2010+A1:2019 Semiconductor devices. Discrete devices - Bipolar transistors
BS IEC 60747-7:2001 Discrete semiconductor devices and integrated circuits - Bipolar transistors
BS IEC 60747-9:2007 Semiconductor devices - Discrete devices - Insulated-gate bipolar transistors (IGBTs)
BS IEC 60747-9:2019 Semiconductor devices - Discrete devices. Insulated-gate bipolar transistors (IGBTs)
20/30406234 DC BS IEC 63275-2 Ed.1.0. Semiconductor devices. Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors. Part 2. Test method for bipolar degradation by body diode operating
BS EN IEC 60747-17:2020 Semiconductor devices. Magnetic and capacitive coupler for basic and reinforced insulation
BS DD IEC/PAS 60747-17:2011 Semiconductor devices. Discrete devices. Magnetic and capacitive coupler for basic and reinforced isolation
BS IEC 62047-28:2017 Semiconductor devices. Micro-electromechanical devices - Performance testing method of vibration-driven MEMS electret energy harvesting devices
15/30323630 DC BS EN 62047-28. Semiconductor devices. Micro-electromechanical devices. Part 28. Performance testing method of vibration–driven MEMS electret energy harvesting devices
BS QC 790105:1992 Specification for harmonized system of quality assessment for electronic components - Semiconductor devices - Integrated circuits - Blank detail specification - Integrated circuit fusible-link programmable bipolar read-only memories
BS QC 790105:1993 Specification for harmonized system of quality assessment for electronic components. Semiconductor devices. Integrated circuits. Blank detail specification. Integrated circuit fusible-link programmable bipolar read-only memories
BS QC 790132:1992 Specification for harmonized system of quality assessment for electronic components - Semiconductor devices - Integrated circuits - Blank detail specification - Bipolar monolithic digital integrated circuit gates (excluding uncommitted logic arrays)

International Electrotechnical Commission (IEC), bipolar magnetic semiconductor

IEC 60747-7:2000 Semiconductor devices - Part 7: Bipolar transistors
IEC 60747-7:2010/AMD1:2019 Semiconductor devices - Discrete devices - Part 7: Bipolar transistors
IEC 60747-7:2010 Semiconductor devices - Discrete devices - Part 7: Bipolar transistors
IEC 60747-7:2019 Semiconductor devices - Discrete devices - Part 7: Bipolar transistors
IEC 60747-7:2010+AMD1:2019 CSV Semiconductor devices - Discrete devices - Part 7: Bipolar transistors
IEC 60747-9:2001 Semiconductor devices - Discrete devices - Part 9: Insulated-gate bipolar transistors (IGBTs)
IEC 60747-9:2019 Semiconductor devices - Part 9: Discrete devices - Insulated-gate bipolar transistors (IGBTs)
IEC 60747-9:1998 Semiconductor devices - Discrete devices - Part 9: Insulated-gate bipolar transistors (IGBTs)
IEC 60747-9:2007 Semiconductor devices - Discrete devices - Part 9: Insulated-gate bipolar transistors (IGBTs)
IEC 60747-7-3:1991 Semiconductor devices; discrete devices; part 7: bipolar transistors; section 3: blank detail specification for bipolar transistors for switching appliances
IEC 60747-7-5:2005 Semiconductor devices - Discrete devices - Part 7-5: Bipolar transistors for power switching applications
IEC 63275-2:2022 Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 2: Test method for bipolar degradation due to body diode operatio
IEC 60747-9/AMD1:2001 Semiconductor devices - Part 9: Insulated-gate bipolar transistors (IGBTs); Amendment 1
IEC 60747-7/AMD1:1991 Semiconductor discrete devices and integrated circuits; part 7: bipolar transistors; amendment 1
IEC 60747-7-2:1989 Semiconductor devices; discrete devices; part 7: bipolar transistors; section two: blank detail specification for case-rated bipolar transistors for low-frequency amplification
IEC 60747-7-4:1991 Semiconductor devices; discrete devices; part 7: bipolar transistors; section 4: blank detail specification for case-rated bipolar transistors for high-frequency amplification
IEC 60747-7-1:1989 Semiconductor devices; discrete devices; part 7: bipolar transistors; section one: blank detail specification for ambient-rated bipolar transistors for low and high-frequency amplification
IEC 60747-17:2020 Semiconductor devices - Part 17: Magnetic and capacitive coupler for basic and reinforced insulation
IEC 60747-17:2020/COR1:2021 Semiconductor devices - Part 17: Magnetic and capacitive coupler for basic and reinforced insulation; Corrigendum 1
IEC PAS 60747-17:2011 Semiconductor devices - Discrete devices - Part 17: Magnetic and capacitive coupler for basic and reinforced isolation
IEC 62047-28:2017 Semiconductor devices - Micro-electromechanical devices - Part 28: Performance testing method of vibration-driven MEMS electret energy harvesting devices
IEC 60748-2-1:1991 Semiconductor devices; integrated circuits; part 2: digital integrated circuits; section 1: blank detail specification for bipolar monolithic digital integrated circuits gates (excluding uncommitted logic arrays)
IEC 60747-6-2:1991 Semiconductor devices; discrete devices; part 6: thyristors; section 2: blank detail specification for bidirectional triode thyristors (triacs), ambient or case, up to 100 A
IEC 60747-17:2021 Corrigendum 1 - Semiconductor devices - Part 17: Magnetic and capacitive coupler for basic and reinforced insulation

PL-PKN, bipolar magnetic semiconductor

PN T01208-03-1992 Semiconductor devices Bipolar transistors Measuring methods
PN T01208-01-1992 Semiconductor devices Bipolar transistors Terminology and letter symbols
PN T01208-02-1992 Semiconductor devices Bipolar transistors Essential ratings and characteristics
PN T01210-01-1992 Semiconductor devices Discrete devices Bipolar transistors Blank detail specification for case-rated bipolar transistors for low-frequency amplification
PN T01207-01-1992 Semiconductor devices Discrete devices BipoLar transistors Blank detail specification for ambient-rated bipolar transistors for Iow and high-frequency amplification

Korean Agency for Technology and Standards (KATS), bipolar magnetic semiconductor

KS C IEC 60747-7:2006 Semiconductor devices－Discrete devices－Part 7：Bipolar transistors
KS C IEC 60747-7:2017 Semiconductor devices－Discrete devices－Part 7：Bipolar transistors
KS C IEC 60747-7:2022 Semiconductor devices — Discrete devices — Part 7: Bipolar transistors
KS C IEC 60747-7-3-2006(2021) Semiconductor devices－Discrete devices－Part 7：Bipolar transistors－Section three：Blank detail specification for bipolar transistors for switching applications
KS C IEC 60747-7-3-2006(2016) Semiconductor devices－Discrete devices－Part 7：Bipolar transistors－Section three：Blank detail specification for bipolar transistors for switching applications
KS C IEC 60747-7-4:2006 Semiconductor devices－Discrete devices－Part 7：Bipolar transistors－Section Four：Blank detail specification for case-rated bipolar transistors for high-frequency amplification
KS C IEC 60747-7-2:2006 Semiconductor devices－Discrete devices－Part 7：Bipolar transistors－Section Two：Blank detail specification for case-rated bipolar transistors for low-frequency amplification
KS C IEC 60747-7-3:2006 Semiconductor devices－Discrete devices－Part 7：Bipolar transistors－Section three：Blank detail specification for bipolar transistors for switching applications
KS C IEC 60747-7-4-2006(2021) Semiconductor devices－Discrete devices－Part 7：Bipolar transistors－Section Four：Blank detail specification for case-rated bipolar transistors for high-frequency amplification
KS C IEC 60747-7-4-2006(2016) Semiconductor devices－Discrete devices－Part 7：Bipolar transistors－Section Four：Blank detail specification for case-rated bipolar transistors for high-frequency amplification
KS C IEC 60747-7-2-2006(2016) Semiconductor devices－Discrete devices－Part 7：Bipolar transistors－Section Two：Blank detail specification for case-rated bipolar transistors for low-frequency amplification
KS C IEC 60747-7-2-2006(2021) Semiconductor devices－Discrete devices－Part 7：Bipolar transistors－Section Two：Blank detail specification for case-rated bipolar transistors for low-frequency amplification
KS C IEC 60747-7-1-2006(2016) Semiconductor devices－Discrete devices－Part 7：Bipolar transistors－Section One：Blank detail specification for ambient-rated bipolar transistors for low and high-frequency amplification
KS C IEC 60747-7-1-2006(2021) Semiconductor devices－Discrete devices－Part 7：Bipolar transistors－Section One：Blank detail specification for ambient-rated bipolar transistors for low and high-frequency amplification
KS C IEC 60747-6-2:2006 Semiconductor devices－Discrete devices－Part 6：Thyristors－Section two：Blank detail specification for bidirectional triode thyristors(triacs), ambient or case-rated, up to 100 A
KS C IEC 60747-7-1:2006 Semiconductor devices－Discrete devices－Part 7：Bipolar transistors－Section One：Blank detail specification for ambient-rated bipolar transistors for low and high-frequency amplification
KS C IEC 60747-6-2-2006(2021) Semiconductor devices－Discrete devices－Part 6：Thyristors－Section two：Blank detail specification for bidirectional triode thyristors(triacs), ambient or case-rated, up to 100 A
KS C IEC 60747-6-2-2006(2016) Semiconductor devices－Discrete devices－Part 6：Thyristors－Section two：Blank detail specification for bidirectional triode thyristors(triacs), ambient or case-rated, up to 100 A
KS C IEC 60748-2-1:2001 Semiconductor integrated circuits－Part 2：Digital integrated circuits Section One：Blank detail specification for bipolar monolithic digital integrated circuit gates (excluding uncommitted logic arrays)
KS C IEC 60748-2-7-2002(2022) Semiconductor devices－Integrated circuits－Part 2：Digital integrated circuits Section 7：Blank detail specification for integrated circuits fusible－link programmable bipolar read－only memories

TH-TISI, bipolar magnetic semiconductor

TIS 1864-2009 Semiconductor devices.part 7: bipolar transistors
TIS 1867-1999 Semiconductor devices - discrete devices part 7:bipolar transistors section 4:blank detail specification for bipolar transistors for switching applications
TIS 1866-1999 Semiconductor devices - discrete devices part 7:bipolar transistors section 2:blank detail specification for case-rated bipolar transistors for low frequency amplification
TIS 1868-1999 Semiconductor devices - discrete devices part 7:bipolar transistors section 4:blank detail specification for case-rated bipolar transistors for high-frequency amplification
TIS 1865-1999 Semiconductor devices-discrete devices part 7:bipolar transistors section 1:blank detail specification for ambient-rated bipolar transistors for low and high-frequency amplification
TIS 1971-2000 Semiconductor devices discrete devices part 3:signal (including switching)and regulator diodes section two-blank detail specification for voltage-regulator diodes and voltage-reference diodes,excluding temperature-compensated precision reference diodes
TIS 1974-2000 Semiconductor devices discrete devices part 6:thyristors section 2:blank detail specification for bidirectional triode thyristors(triacs),ambient or case-rated,up to 100 a

YU-JUS, bipolar magnetic semiconductor

JUS A.A4.302-1990 Tabular layouts ofarticle characteristics for semiconductor diodes
JUS N.R1.353-1979 Letter symbohfor semiconductor devices. Bipolar andfield-effect transistors.
JUS N.R1.323-1979 Termsand definitions for semiconductor devices. Bipolar and field-effect transistors.
JUS N.R1.372-1979 Semiconductor diodes. Essential ratmgs and characteristics: rectifier diodes
JUS N.R1.375-1980 Semiconductor diode s. Essential ratings and characteristics. Variable capacitance diodes
JUS N.R1.374-1980 Semiconductor diodes. Essentialratings and chdracteristics. Ttmneldiodes

KR-KS, bipolar magnetic semiconductor

KS C IEC 60747-7-2022 Semiconductor devices — Discrete devices — Part 7: Bipolar transistors
KS C IEC 60747-7-2017 Semiconductor devices－Discrete devices－Part 7：Bipolar transistors

Military Standard of the People's Republic of China-General Armament Department, bipolar magnetic semiconductor

GJB/Z 41.6-1993 Military semiconductor discrete device series spectrum bipolar transistor

General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China, bipolar magnetic semiconductor

GB/T 4587-2023 Semiconductor Devices Discrete Devices Part 7: Bipolar Transistors
GB/T 29332-2012 Semiconductor devices.Discrete devices.Part 9:Insulated-gate bipolar transistors (IGBT)
GB/T 4587-1994 Semiconductor discrete devices and integrated circuits. Part 7:Bipolar transistors
GB/T 30116-2013 Requirements for semiconductor manufacturing facility electromagnetic compatibility
GB/T 7576-1998 Semiconductor devices--Discrete devices. Part 7: Bipolar transistors. Section Four--Blank detail specification for case-rated bipolar transistors for high-frequency amplification
GB/T 6217-1998 Semiconductor devices--Discrete devices. Part 7: Bipolar transistors. Section One--Blank detail specification for ambient-rated bipolar transistors for low and high frequency amplification
GB/T 14119-1993 Blank detail specification for semiconductor integrated circuit fusible-link programmable bipolar readonly memories
GB/T 13150-2005 Semiconductor devices-Discrete devices-Blank detail specification for bidirectional triode thyristors(triacs),ambient and case-rated,for currents greater than 100A
GB/T 6590-1998 Semiconductor devices Discrete devices Part 6: Thyristors Section Two-Blank detail specification for bidirectional triode thyristors(triacs),ambient or case-rated,up to 100A

Defense Logistics Agency, bipolar magnetic semiconductor

DLA MIL-S-19500/438 VALID NOTICE 4-2011 Semiconductor Device, Triode Thyristor (Bi-Directional), Silicon, Types 2N5806 Through 2N5809
DLA MIL-PRF-19500/762-2009 SEMICONDUCTOR DEVICE, DIODE, SILICON, DUAL SCHOTTKY, COMMON CATHODE, TYPE 1N7062CCT1, JAN, JANTX, JANTXV, AND JANS
DLA MIL-PRF-19500/764 F-2009 SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY, DUAL, COMMON CATHODE, TYPE 1N7071CCT8, JAN, JANTX, JANTXV, AND JANS
DLA MIL-PRF-19500/765 A-2013 SEMICONDUCTOR DEVICE, DIODE, SILICON, DUAL SCHOTTKY, COMMON CATHODE, TYPE 1N7072CCT3, AND 1N7078U3 JAN, JANTX, JANTXV, AND JANS
DLA MIL-PRF-19500/754 D-2009 SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY, DUAL, COMMON CATHODE, TYPE 1N7064CCU3 and 1N7064CCU3C, JAN, JANTX, JANTXV, AND JANS
DLA MIL-S-19500/390 VALID NOTICE 4-2011 Semiconductor Device, Transistor, NPN, Silicon, Double-Emitter Types 3N74, TX3N74, 3N75, TX3N75, 3N76, TX3N76, 3N127, TX3N127
DLA MIL-PRF-19500/507 F-2011 SEMICONDUCTOR DEVICE, DIODE, SILICON, BIPOLAR TRANSIENT VOLTAGE SUPPRESSOR, TYPES 1N6036A THROUGH 1N6072A JAN, JANTX, AND JANTXV
DLA MIL-PRF-19500/681 C-2013 SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY, DUAL, CENTER TAP, TYPE 1N6843CCU3, JAN, JANTX, JANTXV, AND JANS
DLA MIL-PRF-19500/718 VALID NOTICE 1-2008 Semiconductor Device, Diode, Silicon, Bipolar Transient Voltage Suppressor, Types 1N6950 through 1N6986, JAN, JANTX, JANTXV, and JANS
DLA MIL-PRF-19500/718 VALID NOTICE 2-2013 Semiconductor Device, Diode, Silicon, Bipolar Transient Voltage Suppressor, Types 1N6950 through 1N6986, JAN, JANTX, JANTXV, and JANS
DLA MIL-PRF-19500/735-2006 SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY, DUAL, CENTER TAP, TYPE 1N7041CCU1 AND SINGLE DIODE TYPE 1N7045T3, JAN, JANTX, JANTXV, AND JANS
DLA MIL-PRF-19500/730 A-2011 SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY, DUAL, CENTER TAP, TYPES 1N7037CCU1, 1N7043CAT1, 1N7043CCT1, JAN, JANTX, JANTXV, AND JANS
DLA MIL-PRF-19500/730 B-2013 SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY, DUAL, CENTER TAP, TYPES 1N7037CCU1, 1N7043CAT1, 1N7043CCT1, JAN, JANTX, JANTXV, AND JANS
DLA MIL-PRF-19500/737 A (1)-2010 SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY, DUAL, CENTER TAP, TYPES 1N7039CCT1, 1N7039CCU1 AND 1N7047CCT3, JANTX, JANTXV, AND JANS
DLA MIL-PRF-19500/737 A (2)-2013 SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY, DUAL, CENTER TAP, TYPES 1N7039CCT1, 1N7039CCU1 AND 1N7047CCT3, JANTX, JANTXV, AND JANS
DLA SMD-5962-91554 REV A-1992 MICROCIRCUITS, DIGITAL, BIPOLAR CMOS, OCTAL REGISTERED TRANSCEIVER, MONOLITHIC SILICON
DLA MIL-PRF-19500/730 VALID NOTICE 1-2011 Semiconductor Device, Diode, Silicon, Schottky, Dual, Center Tap, Types 1N7037CCU1, 1N7043CAT1, 1N7043CCT1, JAN, JANTX, JANTXV, and JANS
DLA SMD-5962-89877 REV C-2004 MICROCIRCUIT, LINEAR, CMOS, DUAL, RS232, TRANSCEIVER, MONOLITHIC SILICON
DLA MIL-PRF-19500/643 C (1)-2012 SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, DUAL, COMMON CATHODE OR ANODE CENTER TAP, ULTRAFAST, TYPES 1N6766 AND 1N6767, 1N6766R AND 1N6767R, JAN, JANTX, JANTXV, AND JANS
DLA SMD-5962-88503 REV J-2003 MICROCIRCUIT, LINEAR, DUAL MOSFET DRIVERS, MONOLITHIC SILICON
DLA SMD-5962-87640 REV B-2002 MICROCIRCUIT, LINEAR, BIMOS II LATCHED DRIVERS, MONOLITHIC SILICON
DLA MIL-PRF-19500/642 D VALID NOTICE 1-2012 Semiconductor Device, Diode, Silicon, Power Rectifier, Dual, Common Cathode or Anode Center Tap, Ultrafast, Types 1N6762 Through 1N6765 and 1N6762R Through 1N6765R JANTX, JANTXV, and JANS
DLA SMD-5962-89551 REV A-2001 MICROCIRCUITS, DIGITAL, HIGH SPEED CMOS, DUAL J-K POSITIVE EDGE-TRIGGERED FLIP-FLOP, MONOLITHIC SILICON
DLA SMD-5962-96815 REV A-2000 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, 8-BIT TTL/BTL TRANSCEIVER WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
DLA SMD-5962-96618 REV B-1997 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, CMOS, DUAL COMPLEMENTARY PAIR PLUS INVERTER, MONOLITHIC SILICON
DLA MIL-PRF-19500/644 A VALID NOTICE 2-2011 Semiconductor Device, Diode, Silicon, Power Rectifier, Dual, Common Cathode or Anode Center Tap, Ultrafast, Types 1N6768 Through 1N6771 and 1N6768R Through 1N6771R JAN, JANTX, JANTXV, and JANS
DLA SMD-5962-95842 REV A-2007 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, 18-BIT BUS-INTERFACE FLIP-FLOP WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-94604 REV A-2002 MICROCIRCUIT, LINEAR, CMOS, DUAL MICROPOWER OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
DLA SMD-5962-93180 REV A-2002 MICROCIRCUIT, LINEAR, CMOS, QUAD, SPDT ANALOG SWITCH, MONOLITHIC SILICON
DLA SMD-5962-87641-1988 MICROCIRCUITS, LINEAR, BIMOS 8-BIT, SERIAL INPUT, LATCHED DRIVER, MONOLITHIC SILICON
DLA SMD-5962-90741 REV B-2006 MICROCIRCUIT, DIGITAL, BIPOLAR CMOS, OCTAL BUFFER AND LINE DRIVERS/MOS DRIVER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-90744 REV B-2006 MICROCIRCUIT, DIGITAL, BIPOLAR CMOS, 10-BIT BUS/MOS MEMORY DRIVER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-89657 REV B-2001 MICROCIRCUIT, LINEAR, DUAL, CMOS, 12-BIT, D/A CONVERTER, MONOLITHIC SILICON
DLA SMD-5962-93184 REV A-1993 MICROCIRCUIT, LINEAR, DUAL/QUAD, CURRENT FEEDBACK AMPLIFIER, MONOLITHIC SILICON
DLA SMD-5962-89507 REV B-2000 MICROCIRCUIT, LINEAR, HIGH SPEED CMOS, QUAD BILATERAL SWITCH, MONOLITHIC SILICON
DLA SMD-5962-96747-1997 MICROCIRCUIT, DIGITAL, ADVANCED CMOS, SCAN PATH SELECTOR WITH 8-BIT BIDIRECTIONAL DATA BUS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-95835-1995 MICROCIRCUIT, DIGITAL, BIPOLAR CMOS, OCTAL TRANSPARENT D-TYPE LATCH WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-89672 REV A-2001 MICROCIRCUIT, LINEAR, DUAL 12-BIT, DOUBLE-BUFFERED MULTIPLYING CMOS, DIGITAL-TO-ANALOG CONVERTER, MONOLITHIC SILICON
DLA MIL-PRF-19500/516 E-2009 SEMICONDUCTOR DEVICE, DIODE SILICON, BIPOLAR TRANSIENT VOLTAGE SUPPRESSOR, TYPES 1N6102 THROUGH 1N6137, 1N6102A THROUGH 1N6137A, 1N6138 THROUGH 1N6173, 1N6138A THROUGH 1N6173A, 1N6102US THROUGH 1N6137US, 1N6102AUS THROUGH 1N6137AUS, 1N6138US THROUGH 1N61
DLA SMD-5962-91555 REV B-2006 MICROCIRCUIT, DIGITAL, BIPOLAR CMOS, OCTAL BUS TRANSCEIVER AND REGISTER WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
DLA SMD-5962-93175 REV B-1999 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, 16-BIT BUS TRANSCEIVER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA MIL-PRF-19500/678 VALID NOTICE 2-2011 Semiconductor Device, Diode, Silicon, Dual Schottky Center Tap Power Rectifier, Surface Mounted, Types 1N6840U3 and 1N6841U3, JAN, JANTX, JANTXV, JANS
DLA SMD-5962-96761-1996 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, 1-LINE TO 8-LINE CLOCK DRIVER, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-90939 REV C-2006 MICROCIRCUIT, DIGITAL, BIPOLAR CMOS, OCTAL BUFFER AND LINE DRIVER/MOS DRIVER WITH INVERTED THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-03247 REV B-2005 MICROCIRCUIT, HYBRID, LINEAR, POWER MOSFET, DUAL CHANNEL, OPTOCOUPLER
DLA SMD-5962-94522 REV A-2001 MICROCIRCUIT, DIGITAL, BIPOLAR CMOS, PROGRAMMABLE SKEW CLOCK BUFFER, TTL COMPATIBLE INPUTS AND OUTPUTS, MONOLITHIC SILICON
DLA SMD-5962-96685 REV C-2003 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, 3.3- VOLT 16-BIT BUFFER/DRIVER WITH BUS HOLD, THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-92314 REV C-1997 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, OCTAL LATCHED TRANSCEIVER WITH DUAL ENABLE, THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-95831 REV D-2007 MICROCIRCUIT, DIGITAL, ADVANCED BICMOS, 3.3 VOLT OCTAL TRANSPARENT D-TYPE LATCH WITH BUS HOLD, THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-95832 REV C-2003 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, 3.3- VOLT OCTAL EDGE-TRIGGERED D-TYPE FLIP FLOP WITH BUS HOLD, THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-95813 REV F-2008 MICROCIRCUIT, LINEAR RADIATION HARDENED CMOS, DUAL SPDT ANALOG SWITCHES, MONOLITHIC SILICON
DLA SMD-5962-96812 REV A-2003 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, 10-BIT ADDRESSABLE SCAN PORTS, MULTIDROP-ADDRESSABLE IEEE STD 1149.1 (JTAG) TAP TRANSCEIVER, MONOLITHIC SILICON
DLA SMD-5962-87763 REV A-2004 MICROCIRCUIT, LINEAR, CMOS, DUAL 12-BIT, DIGITAL-TO-ANALOG CONVERTER, MONOLITHIC SILICON
DLA SMD-5962-95841 REV A-2007 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, 16-BIT BUS TRANSCEIVER AND REGISTER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-96753 REV A-1999 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, CLOCK AND WAIT-STATE GENERATION CIRCUIT, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-96768 REV A-2003 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, QUADRUPLE BUS BUFFER GATE WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-96808 REV B-2003 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, 16-BIT TRI-PORT UNIVERSAL BUS EXCHANGER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-97527 REV A-2003 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, 10-BIT BUS-EXCHANGE SWITCH WITH THREE STATE OUTPUTS AND LEVEL SHIFTING, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-96861 REV A-1997 MICROCIRCUIT, DIGITAL, ADVANCED HIGH SPEED CMOS, DUAL POSITIVE EDGE-TRIGGERED D-TYPE FLIP-FLOP WITH CLEAR AND PRESET, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-94508 REV A-2000 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, 9-BIT BUS INTERFACE FLIP-FLOP WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-94528 REV B-2003 MICROCIRCUIT, DIGITAL, ADVANCED CMOS, OCTAL 16-BIT D-TYPE FLIP-FLOP WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-90747 REV B-1995 MICROCIRCUIT, DIGITAL, BIPOLAR CMOS, TTL COMPATIBLE, OCTAL D-TYPE EDGE TRIGGERED FLIP-FLOP, MONOLITHIC SILICON
DLA SMD-5962-94671 REV A-2007 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, 18-BIT UNIVERSAL BUS TRANSCEIVER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-94672 REV A-2007 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, SCAN TEST DEVICE WITH 18-BIT UNIVERSAL BUS TRANSCEIVER, THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-91726-1994 MICROCIRCUIT, DIGITAL, BIPOLAR CMOS, SCAN TEST DEVICE WITH OCTAL BUFFER, THREE-STATE OUTPUTS, MONOLITHIC SILICON
DLA SMD-5962-90514 REV A-2006 MICROCIRCUIT, DIGITAL, BIPOLAR CMOS, OCTAL BUS TRANSCEIVER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-96697-1996 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, 18-BIT BUS-EXCHANGE SWITCH WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-96746 REV A-2003 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, 8-BIT TO 9-BIT PARITY BUS TRANSCEIVER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-96748 REV D-1999 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, 3.3-VOLT OCTAL BUS TRANSCEIVER AND REGISTER WITH BUS HOLD, THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-96849 REV A-2000 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, 3.3- V 16-BIT REGISTERED TRANSCEIVER WITH BUS HOLD, THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-95836-1995 MICROCIRCUIT, DIGITAL, BIPOLAR CMOS, OCTAL EDGE-TRIGGERED D-TYPE FLIP-FLOP WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-91533 REV A-1994 MICROCIRCUITS, LINEAR, CMOS, HIGH PERFORMANCE DUAL SWITCHED CAPACITOR FILTER, MONOLITHIC SILICON
DLA SMD-5962-88520 REV E-2007 MICROCIRCUIT, DIGITAL, ADVANCED CMOS, DUAL D-TYPE POSITIVE EDGE-TRIGGERED FLIP-FLOP, MONOLITHIC SILICON
DLA SMD-5962-90516 REV B-2006 MICROCIRCUIT, DIGITAL, BIPOLAR CMOS, OCTAL D-TYPE EDGE-TRIGGERED FLIP FLOP WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-93147 REV A-2007 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, OCTAL EDGE-TRIGGERED D-TYPE FLIP-FLOP WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-93148 REV A-1995 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, OCTAL EDGE-TRIGGERED D-TYPE FLIP-FLOP WITH CLOCK ENABLE, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-93149 REV C-2007 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, OCTAL EDGE-TRIGGERED D-TYPE FLIP-FLOP WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-93201 REV B-1997 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, 16-BIT EDGE-TRIGGERED D-TYPE FLIP-FLOP WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-92148 REV D-1999 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, OCTAL TRANSCEIVER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-95576 REV A-1996 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, 36-BIT UNIVERSAL BUS TRANSCEIVER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-95577 REV A-1996 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, 36-BIT BUS TRANSCEIVER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-91553 REV A-2006 MICROCIRCUIT, DIGITAL, BIPOLAR CMOS, OCTAL BUS TRANSCEIVER AND REGISTER WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
DLA SMD-5962-91746-1994 MICROCIRCUIT, DIGITAL, BIPOLAR CMOS, SCAN TEST DEVICE WITH OCTAL BUFFER, INVERTING THREE-STATE OUTPUTS, MONOLITHIC SILICON
DLA SMD-5962-90625 REV A-2006 MICROCIRCUIT, DIGITAL, BIPOLAR CMOS, OCTAL BUFFER AND LINE DRIVER WITH THREESTATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-93227 REV D-2000 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, OCTAL BUFFER/DRIVER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-96686 REV C-2003 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, 3.3- V 16-BIT BUS TRANSCEIVER WITH BUS HOLD, THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-89671 REV B-2002 MICROCIRCUIT, LINEAR, DUAL 12-BIT BUFFERED MULTIPLYING CMOS D/A CONVERTER, MONOLITHIC SILICON
DLA SMD-5962-95590 REV A-1996 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, 16-BIT BUS TRANSCEIVER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-96769 REV A-1998 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, 10-BIT BUS-INTERFACE D-TYPE LATCH WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-96810 REV B-1998 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, 3.3-VOLT 16-BIT TRANSPARENT D-TYPE LATCH WITH BUS HOLD, THREE-STATE OUTPUTS, AND TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-95712 REV A-2007 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, 9-BIT BUS INTERFACE D-TYPE LATCH WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-91725-1994 MICROCIRCUIT, DIGITAL, BIPOLAR CMOS, SCAN TEST DEVICE WITH OCTAL D-TYPE LATCH, THREE-STATE OUTPUTS, MONOLITHIC SILICON
DLA SMD-5962-95578 REV A-1996 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, 36-BIT REGISTERED BUS TRANSCEIVER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-90743 REV A-2006 MICROCIRCUIT, DIGITAL, BIPOLAR CMOS, OCTAL BUFFER AND LINE DRIVER WITH THREESTATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-90750 REV A-2006 MICROCIRCUIT, DIGITAL, BIPOLAR CMOS, OCTAL BUS TRANSCEIVER WITH INVERTING THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-90752 REV A-2006 MICROCIRCUIT, DIGITAL, BIPOLAR CMOS, OCTAL BUS TRANSCEIVER WITH INVERTING THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-90940 REV A-2006 MICROCIRCUIT, DIGITAL, BIPOLAR CMOS, OCTAL BUS TRANSCEIVER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-94501 REV A-1998 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, 16-BIT BUFFER/DRIVER WITH NONINVERTING THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-94509 REV A-2001 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, 10-BIT BUFFER/DRIVER WITH NONINVERTING THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-94618 REV A-2007 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, OCTAL BUS TRANSCEIVER WITH NONINVERTING THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-92147 REV B-1998 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, OCTAL, BUFFER/DRIVER, WITH NON-INVERTING THREE-STATE OUTPUTS, TTL COMPATIBLE, MONOLITHIC SILICON
DLA SMD-5962-93086 REV A-1996 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, OCTAL BUS TRANSCEIVER AND REGISTER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-93174 REV D-2003 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, 16-BIT BUFFER/DRIVER WITH NONINVERTING THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-93188 REV B-1995 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, OCTAL BUFFER/DRIVER WITH INVERTING THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-93199 REV B-1999 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, 16-BIT BUFFER/DRIVER WITH INVERTING THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-93218 REV B-2000 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, OCTAL TRANSPARENT D-TYPE LATCH WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-93219 REV B-2000 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, OCTAL TRANSPARENT D-TYPE LATCH WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-93241 REV B-2000 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, 16-BIT REGISTERED TRANSCEIVER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-96862 REV A-2008 MICROCIRCUIT, DIGITAL, ADVANCED HIGH SPEED CMOS, QUADRUPLE BUS BUFFER GATE WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
DLA SMD-5962-96868 REV A-2008 MICROCIRCUIT, DIGITAL, ADVANCED HIGHSPEED CMOS, QUADRUPLE BUS BUFFER GATE WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
DLA SMD-5962-95844 REV F-2003 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, 3.3-VOLT NONINVERTING OCTAL BUFFER/DRIVER WITH BUS HOLD, THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-96811 REV A-1999 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, 3.3-VOLT SCAN TEST DEVICE WITH 18-BIT UNIVERSAL BUS TRANSCEIVER, WITH BUS HOLD, THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-94698-1996 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, SCAN TEST DEVICE WITH 18-BIT TRANSCEIVER AND REGISTER, THREE-STATE OUTPUTS AND TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-90742 REV A-2006 MICROCIRCUIT, DIGITAL, BIPOLAR CMOS, OCTAL BUFFER AND LINE DRIVER WITH INVERTING THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-90746 REV B-2006 MICROCIRCUIT, DIGITAL, BIPOLAR CMOS, OCTAL D-TYPE TRANSPARENT LATCH WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-90748 REV A-2006 MICROCIRCUIT, DIGITAL, BIPOLAR CMOS, OCTAL BUFFER AND LINE DRIVER WITH INVERTING THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-90870 REV A-2006 MICROCIRCUIT, DIGITAL, BIPOLAR CMOS, OCTAL REGISTERED TRANSCEIVER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-91724 REV A-2008 MICROCIRCUIT, DIGITAL, BICMOS OCTAL BUS TRANSCEIVERS AND REGISTERS WITH THREESTATE OUTPUTS, TTL COMPATIBLE, MONOLITHIC SILICON
DLA SMD-5962-88765 REV B-2002 MICROCIRCUIT, LINEAR, CMOS, MICROPROCESSOR COMPATIBLE, DUAL 12-BIT DIGITAL-TO-ANALOG CONVERTERS, MONOLITHIC SILICON
DLA SMD-5962-93242 REV B-2001 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, OCTAL BUS TRANSCEIVER AND REGISTER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-94718 REV B-1997 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, OCTAL BUFFER/DRIVER WITH NONINVERTING THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-90749 REV A-2006 MICROCIRCUIT, DIGITAL, BIPOLAR CMOS, OCTAL BUFFER AND LINE DRIVER WITH NONINVERTING THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-95614 REV A-2008 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, SCAN TEST DEVICE WITH 18-BIT BUS TRANSCEIVER, THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON

National Metrological Verification Regulations of the People's Republic of China, bipolar magnetic semiconductor

JJG(电子) 04008-1987 Trial Verification Regulations for QE1A Double-base Semiconductor Tube Tester

Professional Standard - Machinery, bipolar magnetic semiconductor

JB/T 6307.4-1992 Test method for power semiconductor module Arm and pair of arms of bipolar transistor
JB/T 6307.5-1994 Power Semiconductor Module Test Methods Bipolar Transistors Single-Phase Bridge and Three-Phase Bridge

RO-ASRO, bipolar magnetic semiconductor

STAS 12124/1-1982 Semiconductor devices BIPOLAR TRANZISTORS Methods for measuring electrical static parameters
STAS 7128/2-1986 LETTER SYMBOLS FOR SEMI- ONDUCTOR DEVICES AND INTE- RATED MICROCIRCUITS ymbols for bipolar transistors
STAS 12258/2-1984 Optoelectronic semiconductor devices PIIOTODIODES Terminology and essentia] characteristics
STAS 12258/4-1986 Optoelectronic semiconductor devices LIGHT EMITTING DIODES Terminology and main characteristics
STAS 12123/1-1982 Semiconductor devices RECTIFIER DIODES Measuring methods for electrical and thermal characteristics
STAS 12123/4-1984 Semiconductor devices VARIABLE-CAPACITANCE DIODES Measuring methodes for electrical characteristics
STAS 12258/6-1987 OPTOELECTRONIC SEMICON- DUCTOR DEVICES INFRARED EMM1TING DIODES Terminology and essential characteristics
STAS 12123/3-1983 Semiconductor devices VOLTAGE REFERENCE DIODES AND VOLTAGE REGULATOR DIODES Measuring methodes for electrical characteristics
STAS 12123/2-1983 Semiconductor devices LOW POWER SIGNAL DIODES, INCLUDING SWITCHING DIODES Measuring methods for electrical characteristics

Danish Standards Foundation, bipolar magnetic semiconductor

DS/IEC 747-7-2:1990 Semiconductor devices. Discrete devices. Part 7: Bipolar transistors. Section two: Blank detail specification for case-rated bipolar transistors for low-frequency amplification
DS/IEC 747-7-3:1993 Semiconductor devices. Discrete devices. Part 7: Bipolar transistors. Section three: Blank detail specification for bipolar transistors for switching applications
DS/IEC 747-7-4:1993 Semiconductor devices. Discrete devices. Part 7: Bipolar transistors. Section four: Blank detail specification for case-rated bipolar transistors for high-frequency amplification
DS/IEC 747-7:1990 International Electrotechnical Commission IEC Publication No. 747-7:1988 Semiconductor devices - Discrete devices -Part 7: Bipolar transistors
DS/IEC 747-7-1:1990 Semiconductor devices. Discrete devices. Part 7: Bipolar transistors. Section one: Blank detail specification for ambient-rated bipolar transistors for low and high-frequenc amplification
DS/IEC 747-7:1992 Semiconductor devices. Discrete devices. Part 7: Bipolar transistors

German Institute for Standardization, bipolar magnetic semiconductor

DIN 4000-18:1988-12 Tabular layouts of article characteristics for semiconductor diodes
DIN V VDE V 0884-10:2006 Semiconductor devices - Magnetic and capacitive couplers for safe isolation
DIN 4000-18:1988 Tabular layouts of article characteristics for semiconductor diodes
DIN V VDE V 0884-10 Berichtigung 1:2007 Semiconductor devices - Magnetic and capacitive couplers for safe isolatio; Corrigenda to DIN V VDE V 0884-10 (VDE V 0884-10):2006-12

Professional Standard - Electron, bipolar magnetic semiconductor

SJ 50033/146-2000 Semiconductor discrete devices.Detail specification for type 3DA601 C silicon bipolar power transistor
SJ 50033/162-2003 Semiconductor discrete device Detail specification of type 2CW1022 for silicon bidirectional voltage regulator diodes
SJ 50033/99-1995 Semiconductor optoelectronic devices.Detail specification for o/G double colour light emitting diode for type GF511
SJ/T 10740-1996 Semiconductor integrated circuits - General principles of measuring methods for bipolar random access memories
SJ 2658.11-1986 Methods of measurement for semiconductor infrared diodes Methods of measurement for pulse response characteristics

(U.S.) Joint Electron Device Engineering Council Soild State Technology Association, bipolar magnetic semiconductor

JEDEC JESD286-B-2000 Standard for Measuring Forward Switching Characteristics of Semiconductor Diodes

AT-OVE/ON, bipolar magnetic semiconductor

OVE EN IEC 63275-2:2021 Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 2: Test method for bipolar degradation due to body diode operation (IEC 47/2680/CDV) (english version)

未注明发布机构, bipolar magnetic semiconductor

BS IEC 60747-7-5:2005 Semiconductor devices — Discrete devices — Part 7 - 5 : Bipolar transistors for power switching applications

IECQ - IEC: Quality Assessment System for Electronic Components, bipolar magnetic semiconductor

QC 750104-1991 Semiconductor Devices Discrete Devices Part 7: Bipolar Transistors Section Three - Blank Detail Specification for Bipolar Transistors for Switching Applications (IEC 747-7-3 ED 1)
QC 750103-1989 Semiconductor Devices Discrete Devices Part 7: Bipolar Transistors Section Two - Blank Detail Specification for Case-Rated Bipolar Transistors for Low- Frequency Amplification (IEC 747-7-2 ED 1)
QC 750102-1989 Semiconductor Devices Discrete Devices Part 7: Bipolar Transistors Section One - Blank Detail Specification for Ambient-Rated Bipolar Transistors for Low and High- Frequency Amplification (IEC 747-7-1 ED 1)
QC 750107-1991 Semiconductor Devices Discrete Devices Part 7: Bipolar Transistors Section Four - Blank Detail Specification for Case-Rated Transistors for High- Frequency Amplification (IEC 747-7-4 ED 1)
QC 750105-1986 Semiconductor Devices; Discrete Devices Part 3: Signal (Including Switching) and Regulator Diodes Section Two-Blank Detail Specification for Voltage-Regulator Diodes and Voltage-Reference Diodes@ Exluding Temperature-Compensated Precision Ref. Diodes (IEC

IN-BIS, bipolar magnetic semiconductor

RU-GOST R, bipolar magnetic semiconductor

GOST 26169-1984 Radioelectronic equipment electromagnetic compatibility. High-power bipolar high-frequency linear transistors intermodulation component coefficient standards
GOST 28900-1991 Guide to the specifications of limiting values for physical imperfections of parts of ferromagnetic oxides
GOST R 8.842-2013 State system for ensuring the uniformity of measurement. Insruments for measurement of radiant power semiconductor emitter diode. Verification procedure
GOST R 8.843-2013 State system for ensuring the uniformity of measurement. Insruments of measurement of radiant power semiconductor emitter diode. Verification procedure
GOST R 50638-1994 Electromagnetic compatibility of technical equipment. Semicondactor microvawe oscillator devices and modules. List of EMC parameters and requirements for them. Methods of measurement

Association Francaise de Normalisation, bipolar magnetic semiconductor

NF C96-017:2020 Semiconductor devices - Part 17 : magnetic and capacitive coupler for basic and reinforced insulation
NF C96-047*NF EN IEC 60747-17:2020 Semiconductor devices - Part 17 : magnetic and capacitive coupler for basic and reinforced insulation

PH-BPS, bipolar magnetic semiconductor

PNS IEC 62047-28:2021 Semiconductor devices - Micro-electromechanical devices - Part 28: Performance testing method of vibration-driven MEMS electret energy harvesting devices

Taiwan Provincial Standard of the People's Republic of China, bipolar magnetic semiconductor

CNS 6121-1988 Environmental Testing Methods and Endurance Testing Methods for Discrete Semiconductor Devices(Continuous Applying Voltage Test of Rectifier Diodes)
CNS 5539-1988 Environmental Testing Methods and Endurance Testing Methods for Discrete Semiconductor Devices (Continuous Operation Test of Constant Voltage Diode)
CNS 6119-1988 Environmental Testing Methods and Endurance Testing Methods for Discrete Semiconductor Devices (Continuous Operation Test of Rectifier Diodes)
CNS 6125-1988 Environmental Testing Methods and Endurance Testing Methods for Discrete Semiconductor Devices(High Temperature for Applying Voltage Test of Rectifier Diodes)
CNS 6123-1988 Environmental Testing Methods and Endurance Testing Methods for Discrete Semiconductor Devices (Intermittent Appling Voltage Test of Rectifier Diodes)
CNS 5538-1988 Environmental Testing Methods and Endurance Testing Methods for Discrete Semiconductor Devices (Continuous Operation Test of Small Signal Diodes)

Lithuanian Standards Office , bipolar magnetic semiconductor

LST EN IEC 60747-17/AC:2021 Semiconductor devices - Part 17: Magnetic and capacitive coupler for basic and reinforced insulation (IEC 60747-17:2020/COR1:2021)