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Semiconductor device bonding strength
Semiconductor device bonding strength, Total:9 items.
In the international standard classification, Semiconductor device bonding strength involves: Semiconductor devices, Products of non-ferrous metals.
General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China, Semiconductor device bonding strength
- GB/T 41853-2022 Semiconductor devices—Micro-electromechanical devices—Wafer to wafer bonding strength measurement
- GB/T 8750-1997 Gold wire for semiconductor devices lead bonding
- GB/T 8750-2007 Gold bonding wire for semiconductor devices
Professional Standard - Non-ferrous Metal, Semiconductor device bonding strength
未注明发布机构, Semiconductor device bonding strength
- BS EN 62047-9:2011(2012) Semiconductor devices — Micro - electromechanical devices Part 9 : Wafer to wafer bonding strength measurement for MEMS
German Institute for Standardization, Semiconductor device bonding strength
- DIN EN 62047-9:2012-03 Semiconductor devices - Micro-electromechanical devices - Part 9: Wafer to wafer bonding strength measurement for MEMS (IEC 62047-9:2011); German version EN 62047-9:2011
ES-UNE, Semiconductor device bonding strength
- UNE-EN 62047-9:2011 Semiconductor devices - Micro-electromechanical devices - Part 9: Wafer to wafer bonding strength measurement for MEMS (Endorsed by AENOR in June of 2012.)
国家市场监督管理总局、中国国家标准化管理委员会, Semiconductor device bonding strength
- GB/T 4937.22-2018 Semiconductor devices—Mechanical and climatic test methods—Part 22: Bond strength