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diode

diode, Total:500 items.

In the international standard classification, diode involves: Semiconductor devices, Electronic display devices, Optoelectronics. Laser equipment, Vocabularies, Lamps and related equipment, Fibre optic communications, Semiconducting materials, Electronic tubes, Electrical and electronic testing, Glass, Road vehicle systems, Rectifiers. Convertors. Stabilized power supply, Printed circuits and boards, Aerospace electric equipment and systems, Passenger and cabin equipment, Electrical accessories, Radiocommunications, Packaging and distribution of goods in general, Analytical chemistry, Railway rolling stock, Solar energy engineering, Audio, video and audiovisual engineering, Television and radio broadcasting, Electrical engineering in general, Inks. Printing inks, Nuclear energy engineering, Packaging materials and accessories, Environmental protection, Small craft.

International Electrotechnical Commission (IEC), diode

IEC 60747-3-1:1986 Semiconductor devices. Discrete devices. Part 3 : Signal (including switching) and regulator diodes. Section One: Blank detail specification for signal diodes, switching diodes and controlled-avalanche diodes
IEC 60747-3:2013 Semiconductor devices - Part 3: Discrete devices: Signal, switching and regulator diodes
IEC 60747-3:1985 Semiconductor devices. Discrete devices. Part 3 : Signal (including switching) and regulator diodes.
IEC 60747-3-2:1986 Semiconductor devices. Discrete devices. Part 3 : Signal (including switching) and regulator diodes. Section Two: Blank detail specification for voltage-regulator diodes and voltage-reference diodes, excluding temperature-compensated precision reference d
IEC 60747-3/AMD1:1991 Semiconductor devices; discrete devices; part 3: signal (including switching) and regulator diodes; amendment 1
IEC 60747-3/AMD2:1993 Semiconductor devices; discrete devices; part 3: signal (including switching) and regulator diodes; amendment 2
IEC TS 62504:2011 General lighting - LEDs and LED modules - Terms and definitions
IEC TS 62861:2017 Guidelines for principal component reliability testing for LED light sources and LED luminaires
IEC 91/926/PAS:2010 Electronic circuit board for high-brightness LEDs
IEC 60747-5-8:2019 Semiconductor devices - Part 5-8: Optoelectronic devices - Light emitting diodes - Test method of optoelectronic efficiencies of light emitting diodes
IEC 60747-2-2:1993 Semiconductor devices; discrete devices; part 2: rectifier diodes; section 2: blank detail specification for rectifier diodes (including avalanche rectifier diodes), ambient and case-rated, for currents greater than 100 A
IEC 60747-2-1:1989 Semiconductor devices; discrete devices; part 2: rectifier diodes; section one: blank detail specification for rectifier diodes (including avalanche rectifier diodes), ambient and case-rated, up to 100 A
IEC 62979:2017 Photovoltaic modules - Bypass diode - Thermal runaway test
IEC 62931:2017 GX16t-5 capped tubular led lamp - Safety specifications
IEC 60747-5-11:2019 Semiconductor devices - Part 5-11: Optoelectronic devices - Light emitting diodes - Test method of radiative and nonradiative currents of light emitting diodes
IEC 91/928/PAS:2010 Test methods for electronic circuit board for high-brightness LEDs
IEC 60747-7:1988 Semiconductor discrete devices and integrated circuits; part 7: bipolar transistors

Korean Agency for Technology and Standards (KATS), diode

KS C IEC 60747-3-1:2006 Semiconductor devices－Discrete devices－Part 3：Signal (including switching) and regulator diodes－Section one：Blank detail specification for signal diodes, switching diodes and controlled-avalanche diodes
KS C IEC 60747-3-2:2006 Semiconductor devices－Discrete devices－Part 3：Signal (including switching) and regulator diodes－Section Two：Blank detail specification for voltage-regulator diodes and voltage-reference diodes, excluding temperature-compensated precision reference diodes
KS C IEC 60747-3:2006 Semiconductor devices-Discrete devices-Part 3:Signal (including switching) and regulator diodes
KS C IEC 60747-3:2016 Semiconductor devices－Discrete devices－Part 3：Signal (including switching) and regulator diodes
KS C 5205-2002 RELIABILITY ASSURED VOLTAGE REGULATOR DIODES AND VOLTAGE REFERENCE DIODES
KS C IEC 60747-3-1-2006(2016) Semiconductor devices－Discrete devices－Part 3：Signal (including switching) and regulator diodes－Section one：Blank detail specification for signal diodes, switching diodes and controlled-avalanche diod
KS C IEC 60747-3-1-2006(2021) Semiconductor devices－Discrete devices－Part 3：Signal (including switching) and regulator diodes－Section one：Blank detail specification for signal diodes, switching diodes and controlled-avalanche diod
KS C 7120-1990 Light Emitting Diodes(for Indication)
KS C 7120-1990(2016) Light Emitting Diodes(for Indication)
KS C 7120-1990(2021) Light Emitting Diodes(for Indication)
KS C IEC 60747-3-2-2006(2021) Semiconductor devices－Discrete devices－Part 3：Signal (including switching) and regulator diodes－Section Two：Blank detail specification for voltage-regulator diodes and voltage-reference diodes, exclud
KS C IEC 60747-3-2-2006(2016) Semiconductor devices－Discrete devices－Part 3：Signal (including switching) and regulator diodes－Section Two：Blank detail specification for voltage-regulator diodes and voltage-reference diodes, exclud
KS C 7003-1996 Measuring methods for small signal diodes
KS C 5205-1980(2000) RELIABILITY ASSURED VOLTAGE REGULATOR DIODES AND VOLTAGE REFERENCE DIODES
KS C 7003-1981 Measuring methods for small signal diodes
KS C 7003-2017 Measuring methods for small signal diodes
KS C 5300-1992 General rules of light emitting diodes for fiber optic transmission
KS C 6990-2001 General rules of photodiodes for fiber optic transmission
KS C 7003-2017(2022) Measuring methods for small signal diodes
KS C 6905-2001 General rules of laser diodes for fiber optic transmission
KS C 7121-1990 Measuring Methods for Light Emitting Diodes (for Indication)
KS C 5301-1992 Test methods of light emitting diodes for fiber optic transmission
KS C 6991-2001 Test methods of photodiodes for fiber optic transmission
KS C 7121-1990(2021) Measuring Methods for Light Emitting Diodes (for Indication)
KS C 5300-1992(2022) General rules of light emitting diodes for fiber optic transmission
KS C 5203-1980(2000) RELIABILITY ASSURED SMALL SIGNAL DIODES
KS C 6905-2001(2021) General rules of laser diodes for fiber optic transmission
KS C 6045-1991(2001) TESTING METHODS FOR SEMICONDUCTOR RECTIFIER DIODES
KS C 5203-1980 RELIABILITY ASSURED SMALL SIGNAL DIODES
KS C 6045-1986 TESTING METHODS FOR SEMICONDUCTOR RECTIFIER DIODES
KS C IEC 60747-2-1-2006(2016) Semiconductor devices－Discrete devices－Part 2：Rectifier diodes－Section one：Blank detail specification for rectifier diodes(including avalanche rectifier diodes),ambient and case-rated, up to 100 A
KS C IEC 60747-2-1-2006(2021) Semiconductor devices－Discrete devices－Part 2：Rectifier diodes－Section one：Blank detail specification for rectifier diodes(including avalanche rectifier diodes),ambient and case-rated, up to 100 A
KS C 6906-2001 Test methods of laser diodes for fiber optic transmission
KS C 5203-2002 RELIABILITY ASSURED SMALL SIGNAL DIODES
KS C 5213-1981(1997) RELIABILITY ASSURED LOW CURRENT SWITCHING DIODES
KS C 5213-1981 RELIABILITY ASSURED LOW CURRENT SWITCHING DIODES
KS C IEC 60747-2-2-2006(2021) Semiconductor devices－Discrete devices－Part 2：Rectifier diodes－Section Two : Blank detail specification for rectifier diodes (including avalanche rectifier diodes), ambient and case-rated, for current
KS C IEC 60747-2-2-2006(2016) Semiconductor devices－Discrete devices－Part 2：Rectifier diodes－Section Two : Blank detail specification for rectifier diodes (including avalanche rectifier diodes), ambient and case-rated, for current
KS C IEC 60747-2-2:2006 Semiconductor devices-Discrete devices-Part 2:Rectifier diodes-Section Two : Blank detail specification for rectifier diodes (including avalanche rectifier diodes), ambient and case-rated, for currents greater than 100 A
KS C IEC 60747-2-1:2006 Semiconductor devices－Discrete devices－Part 2：Rectifier diodes－Section one：Blank detail specification for rectifier diodes(including avalanche rectifier diodes),ambient and case-rated, up to 100 A
KS C 7104-2005 Standard of measuring the performance of light emitting diodes
KS C 6942-2014 General rule of laser diode modules for fiber optic transmission
KS C 6990-2013 GENERAL RULES OF PHOTODIODES FOR FIBER OPTIC TRANSMISSION
KS C 6991-2013 TEST METHODS OF PHOTODIODES FOR FIBER OPTIC TRANSMISSION
KS C 5204-1980(2000) RELIABILITY ASSURED LOW CURRENT RECTIFIER DIODES
KS C 5217-1983(1998) RELIABILITY ASSURED RECTIFIER DIODES (MEDIUM AND HIGH CURRENT)
KS C 7104-2005(2020) Standard of measuring the performance of light emitting diodes
KS C 5204-1980 RELIABILITY ASSURED LOW CURRENT RECTIFIER DIODES
KS C 5204-2002 RELIABILITY ASSURED LOW CURRENT RECTIFIER DIODES
KS C 5213-2002 RELIABILITY ASSURED LOW CURRENT SWITCHING DIODES
KS C 6990-2001(2011) GENERAL RULES OF PHOTODIODES FOR FIBER OPTIC TRANSMISSION
KS C 5301-1992(2017) Test methods of light emitting diodes for fiber optic transmission
KS C 6906-2001(2016) Test methods of laser diodes for fiber optic transmission
KS C 5301-1992(2022) Test methods of light emitting diodes for fiber optic transmission
KS C 6906-2001(2021) Test methods of laser diodes for fiber optic transmission
KS C 6943-2014 Test methods of laser diode modules for fiber optic transmission
KS C 5217-2002 RELIABILITY ASSURED RECTIFIER DIODES (MEDIUM AND HIGH CURRENT)
KS C 5300-1992(2017) General rules of light emitting diodes for fiber optic transmission
KS C 6704-1991(2001) TEST METHODS OF LASER DIODES USED FOR RECORDING AND PLAYBACK
KS C 5217-1983 RELIABILITY ASSURED RECTIFIER DIODES (MEDIUM AND HIGH CURRENT)

British Standards Institution (BSI), diode

BS IEC 60747-3:2013 Semiconductor devices. Discrete devices: Signal, switching and regulator diodes
BS IEC 60747-5-8:2019 Semiconductor devices. Optoelectronic devices. Light emitting diodes. Test method of optoelectronic efficiencies of light emitting diodes
BS EN 120001:1993 Harmonized system of quality assessment for electronic components. Blank detail specification. Light emitting diodes, light emitting diode arrays, light emitting diode displays without internal logic and resistor
BS PD IEC/TS 62861:2017 Guidelines for principal component reliability testing for LED light sources and LED luminaires
BS EN 120001:1991 Harmonized system of quality assessment for electronic components - Blank detail specification - Light emitting diodes, light emitting diode arrays, light emitting diode displays without internal logic and resistor
BS 9300 C678-721:1971 Detail specification for silicon voltage regulator diodes
BS 9300 C199-276:1971 Detail specification for silicon voltage-regulator diodes
BS 9300 C405-429:1971 Detail specifications for silicon voltage-regulator diodes
BS 9300 C841-849:1971 Detail specification for silicon voltage regulator diodes
BS 9300 C678-721:1980 Detail specification for silicon voltage regulator diodes
BS 9300 C780-831:1971 Detail specification for silicon voltage regulator diodes
BS E9375:1975 Specification - Harmonized system of quality assessment for electronic components - Blank detail specification: voltage regulator diodes and voltage reference diodes excluding precision-voltage temperature-compensated reference diodes
BS IEC 60747-5-11:2019 Semiconductor devices. Optoelectronic devices. Light emitting diodes. Test method of radiative and nonradiative currents of light emitting diodes
BS 9300 C377-378:1971 Detail specifications for silicon coaxial mixer diodes
BS 9300 C771-772:1971 Detail specification for coaxial mixer diodes
BS 9300 C476:1973 Detail specification for silicon avalanche rectifier diode
BS 9300 C667-668:1971 Detail specification for silicon avalanche rectifier diodes
BS 9300 C776-777:1971 Detail specification for germanium coaxial mixer diodes
BS EN 120005:1986 Specification for harmonized system of quality assessment for electronic components - Blank detail specification - Photodiodes, photodiode-arrays (not intended for fibre optic applications)
BS EN 120002:1993 Specification for harmonized system of quality assessment for electronic components. Blank detail specification: infrared emitting diodes, infrared emitting diode arrays
BS 9300 C762:1971 Detail specification for mixer diodes for use at X-band frequencies
BS 9300 C534:1971 Detail specification for silicon coaxial resistive switching diode
BS 9300 C762:1980 Detail specification for mixer diodes for use at X-band frequencies
BS IEC 60747-2:2016 Semiconductor devices. Discrete devices. Rectifier diodes
BS EN 60747-2:2016 Semiconductor devices. Discrete devices. Rectifier diodes
18/30367363 DC BS IEC 60747-5-8. Semiconductor devices. Part 5-8. Optoelectronic devices. Light emitting diodes. Test method of optoelectronic efficiencies of light emitting diodes
BS IEC 60747-5-16:2023 Semiconductor devices - Optoelectronic devices. Light emitting diodes. Test method of the flat-band voltage of GaN-based light emitting diodes based on the photocurrent spectroscopy
BS EN 62341-1-1:2009 Organic light emitting diode (OLED) displays - Generic specifications
BS EN 62931:2017 GX16t-5 capped tubular LED lamp - Safety specifications
BS EN 120005:1993 Specification for harmonized system of quality assessment for electronic components. Blank detail specification. Photodiodes, photodiode-arrays (not intended for fibre optic applications)
BS 9300 C778:1971 Detail specification for a matched pair of germanium coaxial mixer diodes
BS EN ISO 19009:2015 Small craft. Electric navigation lights. Performance of LED lights
BS ISO 13207-1:2012 Road vehicles. LED lamp characteristics for bulb compatible failure detection. LED lamps used as direction indicators
18/30388245 DC BS EN IEC 60747-5-11. Semiconductor devices. Part 5-11. Optoelectronic devices. Light emitting diodes. Test method of radiative and nonradiative currents of light emitting diodes

Defense Logistics Agency, diode

DLA MIL-L-376 C NOTICE 1-1998 LEAD DIOXIDE, TECHNICAL
DLA MIL-L-376 C (1)-1994 LEAD DIOXIDE, TECHNICAL
DLA MIL-L-376 C-1983 LEAD DIOXIDE, TECHNICAL
DLA MIL-PRF-19500/735-2006 SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY, DUAL, CENTER TAP, TYPE 1N7041CCU1 AND SINGLE DIODE TYPE 1N7045T3, JAN, JANTX, JANTXV, AND JANS
DLA MIL-PRF-19500/681 C-2013 SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY, DUAL, CENTER TAP, TYPE 1N6843CCU3, JAN, JANTX, JANTXV, AND JANS
DLA DSCC-DWG-91011 REV B-2003 SEMICONDUCTOR DEVICE, DIODE, ULTRA FAST
DLA MIL-PRF-19500/187 B (1)-2012 SEMICONDUCTOR DIODE, DILICON, HIGH-VOLTAGE TYPE JAN1N2361
DLA MIL-S-19500/298 VALID NOTICE 4-2011 Semiconductor Device, Diode, Silicon Type 1N1742A
DLA MIL-S-19500/236 A VALID NOTICE 3-2011 Semiconductor Device, Diode, Silicon Type 1N31
DLA MIL-PRF-19500/730 A-2011 SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY, DUAL, CENTER TAP, TYPES 1N7037CCU1, 1N7043CAT1, 1N7043CCT1, JAN, JANTX, JANTXV, AND JANS
DLA MIL-PRF-19500/730 B-2013 SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY, DUAL, CENTER TAP, TYPES 1N7037CCU1, 1N7043CAT1, 1N7043CCT1, JAN, JANTX, JANTXV, AND JANS
DLA DSCC-DWG-94022 REV G-2000 SEMICONDUCTOR DEVICE, DIODE, STANDARD RECOVERY
DLA MIL-S-19500/227 VALID NOTICE 3-2011 Semiconductor Device, Diode, Type 1N995M (Navy)
DLA MIL-S-19500/229 VALID NOTICE 3-2011 Semiconductor Device, Diode, Type 1N830AM (Navy)
DLA MIL-S-19500/191 A (1)-1971 SEMICONDUCTOR DEVICE, DIODE, GERMANIUM, MIXER TYPE 1N263
DLA MIL PRF 19500/670A VALID NOTICE 2-2013 SEMICONDUCTOR DEVICE, DIODE, SILICON, BARRIER RECTIFIER, SCHOTTKY, TYPES 1N6826, 1N6826US, 1N6831 and 1N6831US JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
DLA MIL-PRF-19500/656 A-2008 SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY, POWER RECTIFIER, COMMON CATHODE OR COMMON ANODE CENTER TAP, TYPES 1N6785 AND 1N6785R, JAN, JANTX, JANTXV AND JANS
DLA DSCC-DWG-94029 REV C-2001 SEMICONDUCTOR DEVICE, DIODE, TRANSIENT SUPPRESSOR, ARRAY, BI-DIRECTIONAL
DLA MIL-PRF-19500/467 A-2008 SEMICONDUCTOR DEVICE, DIODE, LIGHT EMITTING, TYPE 1N5765 JAN AND TX
DLA MIL-S-19500/254 B VALID NOTICE 1-2011 Semiconductor Device, Diode, Silicon, Types 1N1147 and 1N1149, JAN
DLA MIL-S-19500/200 B VALID NOTICE 3-2011 Semiconductor Device, Diode, Germanium Type 1N270 JAN, JANTX, and JANTXV
DLA MIL-S-19500/230 C VALID NOTICE 4-2011 Semiconductor Device, Diode, Silicon, High-Conductance Type JAN- 1N3207
DLA DSCC-DWG-00005-2001 SEMICONDUCTOR DEVICE, DIODE, SILICON, MIXER, 1N21WE, 1N21WEM AND 1N21WEMR
DLA MIL-PRF-19500/256 C NOTICE 2-1999 SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING, TYPES 1N643, 1N662 AND 1N663
DLA MIL-DTL-3976/1 B-2007 LIGHT EMITTING DIODE (LED), MARKER CLEARANCE-BLACKOUT, 14 AND 28 VOLT
DLA MIL-S-19500/201 B VALID NOTICE 3-2011 Semiconductor Device, Diode, Germanium Type 1N277 JAN, JANTX, and JANTXV
DLA MIL-PRF-19500/691 VALID NOTICE 2-2011 Semiconductor Device, Diode, Silicon, Switching, 1N4148UE2 JAN, JANTX, and JANJ

工业和信息化部, diode

SJ/T 11624-2016 Specification for light-emitting diodes for use in light-emitting diode (LED) displays
SJ/T 2749-2016 Semiconductor Laser Diode Test Methods
QC/T 1038-2016 Automotive light-emitting diodes (LEDs) and modules
SJ/T 11767-2020 Diode low frequency noise parameter testing method
QB/T 5478-2020 UV light-emitting diode light-curing offset printing ink

Japan Electronics and Information Technology Industries Association, diode

EIAJ ED 4910-1995 Light Emitting Diodes

JP-JEITA, diode

JEITA ED4912-2008 Light emitting diodes

Professional Standard - Education, diode

JY 182-1984 vacuum diode

Association Francaise de Normalisation, diode

NF C96-832:1981 Semiconductors. Microwave diodes. Schottky diodes. General requirements.
NF C93-120-001*NF EN 120001:1992 Blank detail specification : light emitting diodes, light emitting diode arrays, light emitting diode displays without internal logic and resistor
NF EN 120002:1992 Spécification particulière-cadre : diodes émettrices en infrarouge, réseaux de diodes émettrices en infrarouge
NF EN 120001:1992 Spécification particulière cadre : diodes électroluminescentes, réseaux de diodes électroluminescentes, afficheurs à diodes électroluminescentes sans résistance ni circuits logiques internes
NF EN 120005:1992 Spécification particulière cadre : photodiodes, réseaux de photodiodes (Non destinées aux applications pour les fibres optiques}
NF C93-120-002*NF EN 120002:1992 Blank Detail Specification : Infrared emitting diodes, infrared emitting diode arrays
NF C93-120-005*NF EN 120005:1992 Blank detail specification : photodiodes, photodiode arrays (not intended for fibre optic applications)
NF C86-502:1983 Harmonized system of quality assessment for electronic components. Blank detail specification. Infrared emitting diodes, infrared emitting diodes arrays.
NF C93-871:1987 Digital transmitters with light emitting diodes.
NF C86-508:1993 Blank detail specification. Light emitting diodes and infrared emitting diodes for fibre optic system or sub-system.
NF C86-501:1983 Harmonized system of quality assessment for electronic components. Blank detail specification. Light emitting diodes, light emitting diode arrays.
NF C93-872:1987 Digital receivers with pin photodiode.
NF C86-818/A1:1981
NF C96-821:1981 Semiconductor Devices High Power rectifier diodes
NF C86-815:1981 Harmonised system of quality assessment for electronic components. Blank detail specification : voltage regulator diodes and voltage reference diodes.
NF C57-379*NF EN 62979:2017 Photovoltaic module - Bypass diode - Thermal runaway test
NF EN 62979:2017 Modules photovoltaïques - Diode de dérivation - Essai d'emballement thermique
NF C86-505:1986 Semiconductor devices. Harmonized system of quality assessment for electronic components. Photodiodes. Photodiodes-arrays. Blank detail specification CECC 20 005.
NF C96-811/A3:1974 Semiconductors Diodes for Professional applications General Article Sheets
NF C96-811/A4:1974 Semiconductors Diodes for professional applications General Article Sheets

Danish Standards Foundation, diode

DS/IEC 747-3-2:1987 Semiconductor devices. Discrete devices. Part 3: Signal (including switching) and regulator diodes. Section 2: Blank detail specification for voltage regulator diodes and voltage reference diodes, excluding temperature compensated precision refere di
DS/IEC 747-3:1986 Semiconductor devices. Discrete devices. Part 3: Signal (including switching) and regulator diodes
DS/IEC 747-3-1:1987 Semiconductor devices - Discrete devices - Part 3: Signal (including switching) and regulator diodes - Section 1: Blank detail specification for signal diodes, switching diodes and controlled-avalanche diodes
DS/IEC 747-2-1:1990 Semiconductor devices. Discrete devices. Part 2: Rectifier diodes. Section one: Blank detail specification for rectifier diodes (including avalanche rectifier diodes), ambient and case-rated, up to 100 A

German Institute for Standardization, diode

DIN IEC 60747-3:1992 Semiconductor devices; discrete devices; part 3: signal diodes and regulator diodes; identical with IEC 60747-3:1985
DIN EN 120005:1996 Blank detail specification - Photodiodes, photodiode-arrays (not intended for fibre optic applications); German version EN 120005:1992
DIN EN 120001:1993-06 Blank detail specification: light emitting diodes, light emitting diode arrays, light emitting diode displays without internal logic and resistor; German version EN 120001:1992
DIN EN 120002:1997-02 Blank detail specification: Infrared emitting diodes, infrared emitting diode arrays; German version EN 120002:1992
DIN EN 120001:1993 Blank detail specification: light emitting diodes, light emitting diode arrays, light emitting diode displays without internal logic and resistor; German version EN 120001:1992
DIN EN 120002:1997 Blank detail specification: Infrared emitting diodes, infrared emitting diode arrays; German version EN 120002:1992
DIN EN 120005:1996-11 Blank detail specification - Photodiodes, photodiode-arrays (not intended for fibre optic applications); German version EN 120005:1992
DIN 4000-18:1988-12 Tabular layouts of article characteristics for semiconductor diodes

Professional Standard - Military and Civilian Products, diode

WJ 2100-2004 Test method for silicon photodiodes and silicon avalanche photodiodes
WJ 2539-1999 Verification Regulations for Temperature Measuring Diode Meter
WJ 2265-1995 Specifications for Preamplified Silicon Avalanche Photodiodes
WJ 2506-1998 Verification Regulations for Photodiode Dynamic Tester

IECQ - IEC: Quality Assessment System for Electronic Components, diode

PQC 105-1992 Blank Detail Specification for Light Emitting Diodes@ Light Emitting Diode Arrays
QC 750101-1986 Semiconductor Devices Discrete Devices Part 3: Signal (Including Switching) and Regulator Diodes@ Section One - Blank Detail Specification for Signal Diodes@ Switching Diodes and Controlled-Avalanche Diodes (IEC 747-3-1 ED 1)
PQC 75-1991 Semiconductor Devices - Discrete Devices - Rectifier Diodes Blank Detail Specification: Rectifier Diodes (Including Avalanche Rectifier Diodes)@ Ambient and Case-Rated@ Greater Than 100 A
QC 750105-1986 Semiconductor Devices; Discrete Devices Part 3: Signal (Including Switching) and Regulator Diodes Section Two-Blank Detail Specification for Voltage-Regulator Diodes and Voltage-Reference Diodes@ Exluding Temperature-Compensated Precision Ref. Diodes (IEC
QC 750101/GB 0001 ISSUE 1-1990 Silicon Ambient Rated High Speed Switching Diode in Plastic Encapsulation
QC 750101/SU 0004-1990 Detail Specification for Electronic Components Semiconductor Diodes@ Ambient-Rated Designated for Circuits in TV Receivers Switching Diodes (Sw)@ Type KD805A

ES-UNE, diode

UNE-EN 120001:1992 BDS: LIGHT EMITTING DIODES, LIGHT EMITTING DIODE ARRAYS, LIGHT EMITTING DIODE DISPLAYS WITHOUT INTERNAL LOGIC AND RESISTOR. (Endorsed by AENOR in September of 1996.)
UNE-EN 120005:1992 BDS: PHOTODIODES, PHOTODIODE ARRAYS (NOT INTENDED FOR FIBRE OPTIC APPLICATIONS). (Endorsed by AENOR in September of 1996.)
UNE-EN 120002:1992 Blank Detail Specification: Infrared emitting diodes, infrared emitting diode arrays
UNE-EN 120008:1993 BDS: LIGHT EMITTING DIODES AND INFRARED EMITTING DIODES FOR FIBRE OPTIC SYSTEM OR SUB-SYSTEM. (Endorsed by AENOR in September of 1996.)
UNE-EN 62979:2017 Photovoltaic module - Bypass diode - Thermal runaway test (Endorsed by Asociación Española de Normalización in October of 2018.)
UNE-EN 120006:1992 BDS: PIN-PHOTODIODES FOR FIBRE OPTIC APPLICATIONS. (Endorsed by AENOR in September of 1996.)

Professional Standard - Electron, diode

SJ 2216-1982 Silicon photodiodes
SJ/T 11470-2014 Epitaxial wafers of light-emitting diodes
SJ 1226-1977 Detail specification for germanium detector diodes,Type 2AP9~2AP10
SJ 1229-1977 Detail specification for germanium switching diodes,Type 2AK1~20
SJ 2005-1982 Detail specification for N channel junction pair field-effect transistors,Type CS34
SJ/T 2216-2015 Technical specification for photodiode of silicon
SJ 1381-1978 Structure and technology of test diode
SJ 1805-1981 Detail specification for silicon frequency modulated variable capacitance diodes,Type 2CC126
SJ 1225-1977 Detail specification for germanium detector diodes,Type 2AP11~2AP17
SJ 1228-1977 Detail specification for germanium wideband detector diodes,Type 2AP30~2AP31
SJ 1946-1981 Detail specification for silicon voltage booster diodes,Type 2CN4C,2DN4C,2CN5C and 2DN5C
SJ 1947-1981 Detail specification for silicon power rectifier diodes,Type 2CZ32B,2DZ32B,2CZ33B and 2DZ33B
SJ 1227-1977 Detail specification for germanium detector diodes,Type 2AP1~2AP8,2AP21 and 2AP27
SJ/T 2354-2015 Measuring methods for photodiodes of PIN、APD
SJ/T 2354-2015/0352 Measuring methods for photodiodes of PIN、APD
SJ 909-1974 Detail specification for silicon voltage regulator diodes,Type 2CW50~149
SJ 2749-1987 Method of measurement for semiconductor laser diodes
SJ 2750-1987 Outline dimensions for semiconductor laser diodes
SJ 2137-1982 General procedures of measurement for silicon current-regulator diodes
SJ/T 11471-2014 Measurement methods for epitaxial wafers of light-emitting diodes
SJ/T 11394-2009 Measure methods of semiconductor light emitting diodes
SJ/T 11397-2009 Phosphors for light emitting diodes
SJ 1388-1978 Methods of measurement for anode conductance of noise-generator diodes
SJ 2218-1982 Semiconductor photocouplers in the diode mode
SJ 20788-2000 Measurment method for thermal impedance of semiconductor diodes
SJ 2747-1987 Blank detail specification for step-function recovery diodes
SJ/T 11141-2017 Generic specification for LED displays
SJ/T 11281-2017 Measure methods of light emitting diode (LED) displays
SJ/T 11281-2007 Measure methods of light emitting diode(LED)panels
SJ 1389-1978 Methods of measurement for diodes leakage current between electrodes of noise-generator diodes
SJ 2140-1982 Methods of measurement for limiting voltage of silicon current regulator diodes
SJ 50033/102-1995 Detail specification for InGaAs/InP PIN photodiode for type GD 218
SJ 1806-1981 Detail specification for silicon band switching varialbe capacitance diodes,Type 2CC110,2CC210,2CC310,2CC410,2CC130
SJ 1392-1978 Methods of measurement for excess noise power of noise-generator diodes
SJ 20785-2000 Measuring methods for super luminescent diode module
SJ 2725-1986 Detail specification for general purpose silicon rectifier diodes,Type 2CZ311
SJ 2727-1986 Detail specification for general purpose silicon rectifier diodes,Type 2CZ313
SJ 910-1974 Detail specification for silicon voltage regulator diodes,Type 3DW50~202
SJ/T 11399-2009 Measurement methods for chips of light emitting diodes
SJ/T 11401-2009 Series program for semiconductor light emitting diodes
SJ 2726-1986 Detail specification for general purpose silicon rectifier diodes,Type 2CZ312
SJ 2717-1986 Detail specification for silicon general purpose rectifier diodes,Type 2CZ301
SJ 2139-1982 Methods of measurement for dynamic impedance of silicon current regulator diodes
SJ 2722-1986 Detail specification for silicon high speed switching rectifier diodes,Type 2CZ306
SJ 2731-1986 Detail specification for silicon high speed switching rectifier fiodes,Type 2CZ317
SJ 50033/101-1995 Detail specification for semiconductor laser diode modules for type GJ1325
SJ 2724-1986 Detail specification for silicon high speed switching rectifier diodes,Type 2CZ308
SJ 2138-1982 Methods of measurement for regulated current of silicon current regulator diodes
SJ 2141-1982 Methods of measurement for breakdown voltage of silicon currenet regulator diodes
SJ 2354.5-1983 Method of measurement for capacitance of PIN and avalanche photodiodes
SJ/T 11396-2009 The sapphire substrates for nitride based light-emitting diode
SJ 2732-1986 Detail specification for silicon high speed switching rectifier diodes,Type 2CZ318
SJ 2721-1986 Detail specification for silicon high speed switching rectifier diodes,Type 2CZ305
SJ 2723-1986 Detail specification for silicon high speed switching rectifier diodes,Type 2CZ307
SJ 2729-1986 Detail specification for silicon medium speed switching rectifier diodes,Type 2CZ315
SJ 2718-1986 Detail specification for silicon medium speed switching rectifier diodes,Type 2CZ302
SJ 2354.3-1983 Method of measurement for dark current of PIN and avalanche photodiodes
SJ 2354.6-1983 Method of measurement for responsivity of PIN and avalanche photodiodes
SJ 2354.13-1983 Method of measurement for multiplication factor of PIN and avalanche photodiodes
SJ 2214.3-1982 Method of measurement for dark current of semiconductor photodiodes
SJ 2214.5-1982 Method of measurement for junction capacitance of semiconductor photodiodes
SJ 50033/41-1994 Detail specification for type GR9414 semiconductor infrared light eitting diode
SJ 2658.1-1986 Methods of measurement for semiconductor infrared diodes General rules
SJ/T 11398-2009 Technical specification for power light-emitting diode chips
SJ 2720-1986 Detail specification for silicon medium speed switching recitifier diodes,Type 2CZ304
SJ 2728-1986 Detail specification for silicon medium speed switching rectifier diodes,Type 2CZ314
SJ 2730-1986 Detail specification for silicon medium speed switching rectifier diodes,Type 2CZ316
SJ/T 11880-2022 Green Factory Evaluation Requirements for Light-Emitting Diode Manufacturing Industry
SJ 1386-1978 Measurement conditions for noise-generator diodes and gas discharge noise tubes

IEEE - The Institute of Electrical and Electronics Engineers@ Inc., diode

IEEE 256-1963 SEMICONDUCTOR DIODES
IEEE 503-1978 STANDARD FOR MEASUREMENT AND CHARACTERIZATION OF DIODE-TYPE CAMERA TUBES

(U.S.) Joint Electron Device Engineering Council Soild State Technology Association, diode

JEDEC JESD211-2009 Zener and Voltage Regulator Diode Rating Verification and Characterization Testing
JEDEC JESD381A-1992 Method of Diode “Q” Measurement
JEDEC JESD307-1992 Voltage Regulator Diode Noise Voltage Measurement
JEDEC JESD320-A-1992 Conditions for Measurement of Diode Static Parameters [Superseded: JEDEC EIA-302, JEDEC 302]
JEDEC JESD282B.01-2002 Silicon Rectifier Diodes Revision of EIA-JESD282-B
JEDEC JESD381A-1981 Method of Diode 換?Measurement Reaffirmation of ANSI/EIA-381-1-1992
JEDEC JESD210-2007 Avalanche Breakdown Diode (ABD) Transient Voltage Suppressors

SE-SIS, diode

SIS SS-CECC 20001-1991 Blank detail specification: Light emitting diodes, light emitting diode arrays, light emitting diode displays without internal logic and resistor
SIS SS CECC 20002-1984 Blank detail specification: Infrared emitting diodes, infrared emitting diode arrays
SIS SS CECC 20005-1988 Blank detail specification: Photodiodes, photodiode-arrays (not intended for fibre optic aoolications)
SIS SS-CECC 50009-1991 Blank detail specification:Case-rated rectifier diodes
SIS SS CECC 50001-1981 Blank detail specification: General purpose semiconductor diodes Vordruck fur Bauartspezi fika tion: Allzweck—Halbleiterdioden
SIS SS-CECC 50008-1991 Blank detail specification: Ambient-rated rectifier diodes

Lithuanian Standards Office , diode

LST EN 120001-2001 Blank detail specification. Light emitting diodes, light emitting diode arrays, light emitting diode displays without internal logic and resistor
LST EN 120002-2001 Blank detail specification. Infrared emitting diodes, infrared emitting diode arrays
LST EN 120005-2001 Blank detail specification. Photodiodes, photodiode-arrays (not intended for fibre optic applications)

U.S. Military Regulations and Norms, diode

ARMY MIL-PRF-49169 B-1999 LIGHT-EMITTING DIODE ARRAY
ARMY MIL-PRF-49169 B VALID NOTICE 1-2013 Light-Emitting Diode Array
ARMY MIL-PRF-49169B-1999 LIGHT-EMITTING DIODE ARRAY
ARMY MIL-N-63400 NOTICE 1-1997 NETWORKS, CAPACITOR-RESISTOR
ARMY MIL-N-63400 (2)-1988 NETWORKS, CAPACITOR-RESISTOR
ARMY MIL-C-48487 C NOTICE 3-1997 CIRCUIT CARD ASSEMBLY - LAMP DIODES
ARMY MIL-C-48487 C REINST NOTICE 2-1996 CIRCUIT CARD ASSEMBLY - LAMP DIODES
ARMY MIL-C-48487 C-1995 CIRCUIT CARD ASSEMBLY - LAMP DIODES
ARMY MIL-PRF-32243-2009 LIGHT EMITTING DIODE (LED) MILITARY DRIVING HEADLAMP
ARMY MIL-PRF-32213-2009 LIGHT EMITTING DIODE (LED) CLEARANCE/ SIDEMARKER AND IDENTIFICATION LAMPS

Taiwan Provincial Standard of the People's Republic of China, diode

CNS 13809-1997 Light Emitting Diode Dice
CNS 13810-1997 Lead Frames for Light Emitting Diodes
CNS 13808-1997 Epitaxial Wafers for Light Emitting Diodes
CNS 11829-1987 Light Emitting Diodes (for Indication)
CNS 8383-1982 Forward Transient Measurement on Semiconductor Diodes
CNS 3998-1989 Method of Test for Small Signal Diodes
CNS 13654-1996 Measuring Methods for Photodiode(for Communication)
CNS 13651-1996 Measuring Methods for Light Emitting Diode(for Communication)
CNS 13648-1996 Measuring Methods for Laser Diode(for Communication)
CNS 11830-1987 Measuring Methods for Light Emitting Diodes (for Indication)
CNS 13811-1997 Numerical-Type Reflectors for Light Emitting Diodes
CNS 13807-1997 Methods of Test of Epoxy for Light Emitting Diodes
CNS 13655-1996 Reliability Testing for Photodiode(for Communication)
CNS 13092-1992 Measuring Method for LED Outdoor Display Panels
CNS 13649-1996 Reliability Testing for Laser Diode(for Communication)
CNS 5764-1980 Voltage Regulator Diode Noise Voltage Measurement
CNS 13652-1996 Reliability Testing for Light Emitting Diode(for Communication)
CNS 13779-1996 Measuring Methods for Infrared Emitting Diodes (IRED)(for Automation)
CNS 13091-1992 LED Outdoor Display Panel Product Standard
CNS 11106-1984 Thermal Equilibrium Conditions for Measurement of Diode Static Parameters
CNS 6560-1980 Measurement of Reverse Recovery Time for Semiconductor Diodes
CNS 14546-2007 LED traffic signal lanterns and lamp housing
CNS 13656-1996 Lot-Control Testing for Photodiode(for Communication)
CNS 13088-1992 Measuring Method for Light Emitting Diode Big Lamps (for Outdoor Display)
CNS 14552-2001 LED pedestrian signal light modules (→CNS 14546)
CNS 13650-1996 Lot-Control Testing for Laser Diode(for Communication)
CNS 13653-1996 Lot-Control Testing for Light Emitting Diode(for Communication)

TH-TISI, diode

TIS 1970-2000 Semiconductor devices discrete devices part 3:signal (including switching)and regulator diodes section one-blank detail specification for signal diodes,switching diodes and controlled-avalanchediodes
TIS 1971-2000 Semiconductor devices discrete devices part 3:signal (including switching)and regulator diodes section two-blank detail specification for voltage-regulator diodes and voltage-reference diodes,excluding temperature-compensated precision reference diodes
TIS 1596-1999 Semiconductor devices.discrete devices.part 2: rectifier diodes section 2: blank detail specification for rectifier diodes (including avalanche rectifier diodes), ambient and case-rated, for currents greater than 100 a

European Standard for Electrical and Electronic Components, diode

EN 120002:1992 Blank detail specification: infrared emitting diodes, infrared emitting diode arrays
EN 120005:1992 Blank detail specification: photodiodes, photodiode-arrays (not intended for fibre optic applications)
EN 120001:1992 Blank detail specification; light emitting diodes, light emitting diode arrays, light emitting diode displays without internal logic and resistor
CECC 50 008- 004 Ambient Rated Rectifier Diode (En)
CECC 50 008- 005 Ambient Rated Rectifier Diode (En)
CECC 50 001- 026 ISSUE 3-1994 NL-CECC 50 001-26; Signal Diodes Type Number: BA314 (En)
CECC 50 008- 014 UTE C 86-818/014; Ambient Rated Rectifier Diodes (Fr)
EN 150009:1992 Blank detail specification: case-rated rectifier diodes
EN 150001:1991 Blank detail specification: general purpose semiconductor diodes
EN 150008:1992 Blank detail specification: ambient-rated rectifier diodes

General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China, diode

GB/T 6588-2000 Semiconductor devices Discrete devices Part 3: Signal(including switching) and regulator diodes Section One--Blank detail specification for signal diodes,switching diodes and controlled-avalanche diodes
GB/T 6570-1986 Measuring methods for microwave diodes
GB/T 6589-2002 Semiconductor devices discrete devices Part 3-2: Signal (including switching) and regulator diodes blank detail specification for voltage-regulator diodes and voltage-reference diodes (excluding temperature-compensated precision reference diodes)
GB/T 15178-1994 Blank detail specification for variable capacitance diodes
GB 51209-2016 Light-emitting diode factory design specification
GB/T 16894-1997 Blank detail specification for rectifier diodes (including avalanche rectifier diodes), ambient and case-rated, for currents greater than 100A
GB/T 6351-1998 Semiconductor devices--Discrete devices. Part 2: Rectifier diodes. Section One--Blank detail specification for rectifier diodes(including avalanche rectifier diodes), ambient and case-rated, up to 100A
GB/T 15137-1994 Blank detail specification for Gunn diodes
GB/T 15649-1995 Blank detail specification for semiconductor laser diodes
GB/T 15177-1994 Blank detail specification for mircowave detectors and mixer diodes
GB/T 12562-1990 Blank detail specification for PIN diodes
GB/T 23729-2009 Photodiodes for scintillation detectors.Test procedures
GB/T 36356-2018 Technical specification for power light-emitting diode chips
GB/T 12561-1990 Blank detail specification for light emitting diodes

RU-GOST R, diode

GOST R 54814-2018 Light emitted diodes and light emitting diode modules for general application. Terms and definitions
GOST R 54814-2011 Light emitted diodes and light emitting diode modules for general application. Terms and definitions
GOST R 51106-1997 Lazers injection, lazer heads, lazers diodes matices, lazers diodes. Methods for measurement of parameters
GOST 17465-1980 Semiconductor diodes. Basic parameters
GOST 28625-1990 Semiconductor devices. Discrete devices. Part 3. Signal (including switching) and regulator diodes. Section 2. Blank detail specification for voltage-regulator diodes and voltage-reference diodes, excluding temperature-compensated precision reference diod
GOST 18986.10-1974 Semiconductor diodes. Methods for measuring inductance
GOST 20693-1975 Hign-voltage kenotrons. Terms and definitions
GOST 21011.1-1976 High-voltage kenotrons. The anode current measurement method
GOST 18986.4-1973 Semiconductor diodes. Methods for measuring capacitance
GOST 18986.6-1973 Semiconductor diodes. Method for measuring recovery charge
GOST 18986.24-1983 Semiconductor diodes. Measurement method of breakdown voltage
GOST 18986.0-1974 Semiconductor diodes. Measuring methods for electrical parameters. General requirements
GOST 23448-1979 Semiconductor infra-red emitting diodes. Basic dimensions
GOST 18986.5-1973 Semiconductor diodes. Method for measuring transition time
GOST 20215-1984 Semiconductor microwave diodes. General specifications
GOST 21011.3-1977 High-voltage kenotrons. Heater current measuring method
GOST 21011.4-1977 High-voltage kenotrons. Test methods of electric strength
GOST 21011.7-1980 High-voltage kenotrons. The emission current measurement method
GOST 18986.1-1973 Semiconductor diodes. Method for measuring direct reverse current
GOST 21011.2-1976 High-voltage kenotrons. The anode current measurement method within the voltage pulse

Jiangxi Provincial Standard of the People's Republic of China, diode

DB36/T 579-2010 LED(Light emitting diode)Road light

Japanese Industrial Standards Committee (JISC), diode

JIS C 7035:1985 Light emitting diodes (for indication)
JIS C 8152-2:2012 Photometry of white light emitting diode for general lighting -- Part 2: LED modules and LED light engines
JIS C 8152-2 AMD 1:2014 Photometry of white light emitting diode for general lighting -- Part 2: LED modules and LED light engines (Amendment 1)
JIS C 5942:1997 General rules of laser diodes used for recording and playback
JIS C 5942:2010 General rules of laser diodes used for recording and playback
JIS C 8152-1:2012 Photometry of white light emitting diode for general lighting -- Part 1: LED packages
JIS C 7223:1978 Reliability assured voltage regulator diodes and voltage reference diodes
JIS C 7031:1993 Measuring methods for small signal diodes
JIS C 5940:1997 General rules of laser diodes for fiber optic transmission
JIS C 5943:1997 Measuring methods of laser diodes used for recording and playback
JIS C 5950:1997 General rules of light emitting diodes for fiber optic transmission
JIS C 5990:1997 General rules of photodiodes for fiber optic transmission
JIS C 5943:2010 Measuring methods of laser diodes used for recording and playback
JIS C 7033:1975 Testing methods for semiconductor rectifier diodes
JIS C 7036:1985 Measuring methods for light emitting diodes (for indication)
JIS C 7221:1978 Reliability assured small signal diodes
JIS C 5941:1997 Measuring methods of laser diodes for fiber optic transmission
JIS C 5951:1997 Measuring methods of light emitting diodes for fiber optic transmission
JIS C 5991:1997 Measuring methods of photodiodes for fiber optic transmission
JIS C 7222:1978 Reliability assured low current rectifier diodes
JIS C 7224:1980 Reliability assured low current switching diodes
JIS C 7225:1982 Reliability assured rectifier diodes (medium and high current)

Professional Standard - Aerospace, diode

QJ 1907-1990 PIN Diode Screening Specifications
QJ 2362-1992 Step Recovery Diode Screening Specifications
QJ 1299-1987 Screening Specifications for Silicon Microwave Mixer and Detector Diodes

Professional Standard - Ferrous Metallurgy, diode

YB/T 4215-2010 Cold rolled steel strip for diode

YU-JUS, diode

JUS N.R1.421-1979 Rectffiar diodes. Measuring methods
JUS A.A4.302-1990 Tabular layouts ofarticle characteristics for semiconductor diodes
JUS N.R1.422-1980 Low-power signal di ode?. Measuring methods
JUS N.R1.321-1979 Terms and definitions for semiconductor devices. Diodes

International Commission on Illumination (CIE), diode

CIE 127-1997 Measurement of LEDs

Professional Standard - Machinery, diode

JB/T 7624-2013 Testing methods for rectifier diodes
JB/T 5186-1991 Silicon photodiodes for cameras
JB/T 10875-2008 Measuring methods for optical properties of LEDs
JB/T 5837-1991 ZP series 2000A and above case-rated rectifier diodes
JB/T 5841-1991 ZH series 200A and above case rated high voltage rectifier diode

RO-ASRO, diode

STAS 7128/7-1986 LETTER SYMBOLS FOR SEMICONDUCTOR DEVICES AND INTEGRATED C1RCUITS Symbols for variable capacitance diodes and mixer diodes
STAS 12123/3-1983 Semiconductor devices VOLTAGE REFERENCE DIODES AND VOLTAGE REGULATOR DIODES Measuring methodes for electrical characteristics
STAS 12123/2-1983 Semiconductor devices LOW POWER SIGNAL DIODES, INCLUDING SWITCHING DIODES Measuring methods for electrical characteristics
STAS 10228-1984 SILICON RECTIFIER DIODES General tehnical requirements lor quality
STAS 9368-1973 GERMANUM POINT CONTACT DIODES General technical requirements lor quality

Group Standards of the People's Republic of China, diode

T/QDAS 050-2020 Research and development procedures for diode diffusers
T/CSA 047-2019 Measurement Method for Real Thermal Resistance and Impedance of Light Emitting Diodes
T/QGCML 097-2021 Diode diffuser packaging technical specification
T/QGCML 030-2020 Conventional Electrical Standards for Diode Diffusion Sheets
T/CIECCPA 003-2019 Specification for green production and processing of LED
T/CSA 015-2012 Organic light emitting diode (OLED) lighting—Measuring methods
T/QDAS 070-2021 Formula of boron diffusion liquid source for diode diffuser
T/COEMA 004LCD-2022 Polarizer film for the Organic Light-Emitting Diode TV Display
T/ZZB 2332-2021 Polished sapphire substrate for LED
T/CVIA 59-2016 Organic Light Emitting Diode (OLED) TV Measurement Methods
T/CVIA 11-2016 Organic Light Emitting Diode (OLED) TV Measurement Methods
T/QDAS 094-2022 Mixed Acid Formula for Diode GPP Groove Cleaning
T/CIECCPA 004-2019 specification for green raw material procurement of LED
T/CSTM 01039-2023 Substrate glass for mini light emitting diodes
T/CEMIA 031-2022 Positive photoresist developer for organic light emitting diode display
T/CSTM 00410-2021 Substrate glass for organic light emitting diode display devices
T/CSA 014-2012 Organic light emitting diode (OLED) lighting — terminology and letter symbol
T/CPF 0055-2023 Metal decorating LED-UV offset ink
T/CVIA 58-2016 General Technical Requirements for Organic Light Emitting Diode (OLED) TVs
T/CVIA 49-2016 Organic Light Emitting Diode Display Device Terms and Symbols
T/CESA 1084-2020 Green Factory Evaluation Requirements for Light-Emitting Diode Manufacturing Industry
T/CVIA 10-2016 General Technical Requirements for Organic Light Emitting Diode (OLED) TVs

Professional Standard - Urban Construction, diode

CJ/T 361-2011 Light emitting diode(LED) lamp used in waterscape

AIA/NAS - Aerospace Industries Association of America Inc., diode

NAS717-1963 Semiconductor Diodes (Rev 1)

Fujian Provincial Standard of the People's Republic of China, diode

DB35/T 1193-2011 Semiconductor LED chip
DB35/T 2107-2022 Ultraviolet light-emitting diode evaluation method
DB35/T 1370-2013 Light-emitting diode chip point test method
DB35/T 1176-2011 Power LEDs for road lighting
DB35/T 1611-2016 COB Package White Light Emitting Diode Technical Specifications

Military Standard of the People's Republic of China-General Armament Department, diode

GJB 3930-2000 General specification for infrared emitting diodes
GJB 3519-1999 General Specification for Semiconductor Laser Diodes
GJB 2146-1994 General specification for light-emitting diode solid-state displays
GJB 2146A-2011 General specification for semiconductor light-emitting diode devices
GJB 1557A-2021 Semiconductor discrete device microwave diode dimensions

PT-IPQ, diode

中华人民共和国国家质量监督检验检疫总局、中国国家标准化管理委员会, diode

GB/T 35846-2018 Lighting glass tube for light emitting diode

Indonesia Standards, diode

SNI 7397-2008 LED (Light Emmiting Diode) signal lamps on the trains

CZ-CSN, diode

CSN 35 8775-1987 Light-emitting diodes. Noise measurement in forward direction
CSN 35 8736-1964 Semiconductor diodes. Measurement of interelectrode capacitanoe
CSN 35 8732-1964 Semiconductor diodes. Measurement of forward current
CSN 35 8786-1983 Varicaps. Electric parameter measurement methods
CSN IEC 747-2-1:1993 Semiconductor devices. Diskrete devices. Part 2: Rectifier diodes. Section 1 - Blank detail specification for rectifier diodes (including avalanche diodes), ambient and case-rated, up to 100A
CSN 35 8734-1975 Semieonductor devices. Diodcs. Measurement of reverse current.
CSN 35 8767-1982 Semiconductor diodes Methods of electrical parameters measurement
CSN 35 8737-1975 Semiconductor devices. Diodes. Measurement of differential rosistanoe
CSN 35 8760-1973 Seraiconductors. Stabilizing diodes. Measurement of voltage temperature coefficient
CSN 35 8735-1964 Semiconductor diodes. Measurement of d. c. currents and voltages
CSN 35 8769-1983 Semiconductor Zener diodes. Electric parameters measurement methods
CSN 35 8768-1983 Semiconductor switching diodes. Electric parameters measurement methods

United States Navy, diode

NAVY A-A-59781-2005 LIGHT EMITTING DIODES FOR USE AS INDICATOR LIGHTS

Professional Standard - Post and Telecommunication, diode

YD/T 835-1996 Test method of avalanche photodiodes
YD/T 834-1996 Test method of distributed feedback laser diodes
YD/T 701-1993 Test method for semiconductor laser diode assembly

Underwriters Laboratories (UL), diode

UL 8752-2012 Organic light emitting diode (OLED) panels
UL SUBJECT 8752-2011 Outline of Investigation for Organic Light Emitting Diode(Oled) Panels
UL 1598C-2014 UL Standard for Safety Light-Emitting Diode (LED) Retrofit Luminaire Conversion Kits (First Edition; Reprint with revisions through and including July 12@ 2017)

国家市场监督管理总局、中国国家标准化管理委员会, diode

GB/T 36613-2018 Probe test method for light emitting diode chips
GB/T 36919-2019 Organic light-emitting diode （OLED）lighting—Terminology and letter symbols
GB/T 38621-2020 Transient thermal test method for light emitting diode modules

Institute of Electrical and Electronics Engineers (IEEE), diode

IEEE No 256-1963 IEEE Test Procedure for Semiconductor Diodes
IEEE Std C62.37-1996 Test specification for thyristor diode surge protective devices

邮电部, diode

YD/T 0835-1996 Avalanche photodiode detection method
YD/T 0834-1996 Distributed feedback laser diode detection method

CENELEC - European Committee for Electrotechnical Standardization, diode

EN 120008:1993 Blank Detail Specification: Light Emitting Diodes and Infrared Emitting Diodes for Fibre Optic System or Sub-System
EN 150006:1991 Blank Detail Specification: Variable Capacitance Diodes

Military Standard of the People's Republic of China-Commission of Science,Technology and Industry for National Defence, diode

GJB 5905-2006 Specification for fast recovery diodes, 600A and above

Society of Automotive Engineers (SAE), diode

SAE ARP6253-2011 LEDs and Aircraft Applications
SAE ARP5873-2007 LED Passenger Reading Light Assembly
SAE J1889-2011 L.E.D. Signal and Marking Lighting Devices

PL-PKN, diode

PN T01504-61-1987 Diodes Measuring methods Recovered charge Q,
PN T01504-67-1987 Diodes Measuring methods Series equivalent resistance
PN T01010 ArkusZ05-1974 Electronic tubes Vacuum diodes Terms and definitions
PN T04804-1967 Low-power elec?ronic ?ubes Electrical ?es?s of yacuum diodes

(U.S.) Telecommunications Industries Association , diode

TIA-455-130-2001 Elevated Temperature Life Test for Laser Diodes
TIA-455-130-2007(2014) Elevated Temperature Life Test for Laser Diodes

Guangdong Provincial Standard of the People's Republic of China, diode

DB44/T 1630-2015 3528/5050 Encapsulated Chip LED

SAE - SAE International, diode

SAE ARP6253A-2017 LEDs and Aircraft Applications

American National Standards Institute （ANSI), diode

ANSI/TIA/EIA 455-130-2001 Elevated Temperature Life Test for Laser Diodes

NEMA - National Electrical Manufacturers Association, diode

NEMA C78.51-2016 Electric Lamps - LED (Light Emitting Diode) Lamps - Method of Designation

JP-JARI, diode

JRIS R1647-2021 Rolling stock - Light Emitting Diode(LED) type tail lamps

TIA - Telecommunications Industry Association, diode

TIA/EIA-455-130-2001 FOTP-130 Elevated Temperature Life Test for Laser Diodes
TIA-455-127-1991 FOTP-127 Spectral Characterization of Multimode Laser Diodes

European Committee for Electrotechnical Standardization（CENELEC）, diode

EN 62979:2017 Photovoltaic module - Bypass diode - Thermal runaway test

Professional Standard - Light Industry, diode

QB/T 4057-2010 LEDs for general lighting.Performance requirements

Guizhou Provincial Standard of the People's Republic of China, diode

DB52/T 861-2013 Detail specification for 2CB003 type silicon avalanche rectifier diode

机械电子工业部, diode

JB 5837-1991 ZP series case rated rectifier diodes above 2000A

Canadian Standards Association (CSA), diode

CAN/CSA-C22.2 NO.250.13-2014 Appareillages à diodes électroluminescentes (DEL) pour applications d’éclairage (deuxième édition)

Professional Standard - Construction Industry, diode

JG/T 467-2014 Light emitting diode(LED) luminaire for building-indoor

National Metrological Verification Regulations of the People's Republic of China, diode

JJG(电子) 04050-1995 Verification rules for PCT-2 diode rapid screening instrument

Professional Standard - Automobile, diode

QC/T 706-2004 Technical specification of silicon avalanche rectification for motor vehicles

Illuminating Engineering Society of North America, diode

IESNA TM-16-2005 Technical Memorandum on Light Emitting Diode (LED) Sources and Systems

Shandong Provincial Standard of the People's Republic of China, diode

DB37/T 1576-2010 General specification of light-emitting diodes for general lighting