31.080.20 晶体闸流管 标准查询与下载



共找到 152 条与 晶体闸流管 相关的标准,共 11

Semiconductor devices discrete devices.part 6: thyristors section 3: blank detail specification for reverse blocking triode thyristors, ambient and case.rated, for currents greater than 100 a

ICS
31.080.20
CCS
发布
2011-08-10
实施

Static VAR compensators (SVC). Testing of thyristor valves

ICS
31.080.20
CCS
L43
发布
2011-07-31
实施
2011-07-31

High-voltage direct current (HVDC) installations - System tests (IEC 61975:2010); German version EN 61975:2010

ICS
31.080.20
CCS
K46
发布
2011-04
实施
2011-04-01

Semiconductor devieces.part 6: thyristors

ICS
31.080.20
CCS
发布
2010-08-31
实施

Thyristor valves for high voltage direct current (HVDC) power transmission - Part 1: Electrical testing (IEC 60700-1:1998 + A1:2003 + A2:2008); German version EN 60700-1:1998 + A1:2003 + A2:2008

ICS
31.080.20
CCS
K46
发布
2009-07
实施
2009-07-01

Thyristor valves for high-voltage direct current (HVDC) power transmission - Part 1 : electrical testing.

ICS
31.080.20
CCS
K46
发布
2009-02-01
实施
2009-02-07

Thyristor valves for high voltage direct current (HVDC) power transmission - Part 1: Electrical testing

ICS
31.080.20
CCS
发布
2008-11-05
实施

This amendment has been prepared by subcommittee 22F: Power electronics for electrical transmission and distribution systems, of IEC technical committee 22: Power electronic systems and equipment. The text of this amendment is based on the following documents: Full information on the voting for the approval of this amendment can be found in the report on voting indicated in the above table. The committee has decided that the contents of this amendment and the base publication will remain unchanged until the maintenance result date indicated on the IEC web site under "http://webstore.iec.ch" in the data related to the specific publication. At this date, the publication will be reconfirmed. ~ reconfirmed, ~ withdrawn, ~ replaced by a revised edition, or ~ amended.

Thyristor valves for high-voltage direct current (HVDC) power transmission - Part 1: Electrical testing

ICS
31.080.20
CCS
L43
发布
2008-08
实施
2008-11-06

This standard defines standard specifications of dc interface parameters, switching parameters, and test loading for definition of the SSTUB32868 registered buffer with parity test for DDR2 RDIMM applications.

Definition of the SSTUB32869 Registered Applications Buffer with Parity for DDR2 RDIMM

ICS
31.080.20
CCS
L43
发布
2007-05-01
实施

This standard defines standard specifications of dc interface parameters, switching parameters, and test loading for definition of the SSTUB32865 registered buffer with parity for 2 rank by 4 or similar highdensity DDR2 RDIMM applications. The SSTUB32865 is identical in functionality to the SSTU32865 but specifies tighter timing characteristics and a higher application frequency of up to 410MHz.

Definition of the SSTUB32865 for DDR2 RDIMM Applications 28-bit 1:2 Registered Buffer with Parity

ICS
31.080.20
CCS
L43
发布
2007-05-01
实施

Definition of the SSTUB32868 Registered Buffer with Parity for 2R x 4 DDR2 RDIMM Applications

Definition of the SSTUB32868 Registered Buffer with Parity for 2R x 4 DDR2 RDIMM Applications

ICS
31.080.20
CCS
L43
发布
2007-05-01
实施

This standard defines standard specifications of dc interface parameters, switching parameters, and test loading for definition of the SSTUB32866 registered buffer with parity test for DDR2 RDIMM applications.

Definition of the SSTUB32866 1.8 V Configurable Registered Buffer with Parity Test for DDR2 RDIMM Applications

ICS
31.080.20
CCS
L43
发布
2007-05-01
实施

This standard defines standard specifications of dc interface parameters, switching parameters, and test loading for definition of the SSTUA32S865 and SSTUA32D865 registered buffer with parity for 2 rank by 4 or similar high-density DDR2 RDIMM applications.

Definition of the SSTUA32S865 DDR2 RDIMM Applications Registered Buffer with Parity for and SSTUA32D865 28-bit 1:2

ICS
31.080.20
CCS
L43
发布
2007-05-01
实施

This 25-bit 1:1 or 14-bit 1:2 configurable registered buffer with parity is designed for 1.7 V to 1.9 V VDD operation.

Definition of the SSTUA32866 1.8 V Configurable Registered Buffer with Parity Test for DDR2 RDIMM Applications

ICS
31.080.20
CCS
L43
发布
2007-05-01
实施

This standard defines standard specifications of dc interface parameters, switching parameters, and test loading for definition of the SSTU32865 registered buffer with parity for 2 rank by 4 or similar highdensity DDR2 RDIMM applications.

Definition of the SSTU32865 Registered Buffer with Parity for 2R ?4 DDR2 RDIMM Applications

ICS
31.080.20
CCS
L43
发布
2007-05-01
实施

This standard defines standard specifications of dc interface parameters, switching parameters, and test loading for definition of the SSTU32866 registered buffer with parity test for DDR2 RDIMM applications.

Definition of the SSTU32866 1.8 V Configurable Registered Buffer with Parity Test for DDR2 RDIMM Applications

ICS
31.080.20
CCS
L43
发布
2007-05-01
实施

This standard defines standard specifications of DC interface parameters, switching parameters, and test loading for definition of the SSTUA32S869 and SSTUA32D869 registered buffer with parity for driving heavy load on high-density DDR2 RDIMM applications. A typical application would be a 36 SDRAM planar DIMM. The SSTUA32S869 and SSTUA32D869 are identical in functionality to the SSTU32S869 and SSTU32D869 devices respectively but specify tighter timing characteristics and a higher application frequency of up to 410MHz.

Definition of the SSTUA32S869 and SSTUA32D869 DDR2 RDIMM Applications Registered Buffer with Parity for

ICS
31.080.20
CCS
L43
发布
2007-05-01
实施

This standard defines standard specifications of DC interface parameters, switching parameters, and test loading for definition of the SSTU32S869 and SSTU32D869 registered buffer with parity for driving heavy load on high-density DDR2 RDIMM applications. A typical application would be a 36 SDRAM planar DIMM.

Definition of the SSTU32S869 and SSTU32D869 Registered Buffer with Parity for DDR2 RDIMM Applications

ICS
31.080.20
CCS
L43
发布
2007-04-01
实施

This document is a core specification for a Fully Buffered DIMM (FBD) memory system. This document, along with the other core specifications, must be treated as a whole. Information critical to a Advanced Memory Buffer design appears in the other specifications, with specific cross-references provided.

FBDIMM: Advanced Memory Buffer (AMB)

ICS
31.080.20
CCS
L43
发布
2007-03-01
实施

Early life failure rate (ELFR) measurement of a product is typically performed during product qualifications or as part of ongoing product reliability monitoring activities. These tests measure reliability performance over the product’s first several months in the field. It is therefore important to establish a methodology that will accurately project early life failure rate to actual customer use conditions.

Early Life Failure Rate Calculation Procedure for Semiconductor Components

ICS
31.080.20
CCS
L43
发布
2007-02-01
实施



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