L41 半导体二极管 标准查询与下载
共找到 223 条与 半导体二极管 相关的标准，共 15 页
Measurement of Small Values of Transistor Capacitance
Measurement of Small Values of Transistor Capacitance
- ICS
- 31.080.10
- CCS
- L41
- 发布
- 1967-02-01
- 实施
The minimum storage temperature shall be based on the capability of any individual transistor to meet the test described below.
Verification of Maximum Ratings of Power Transistors, Test Procedures for
- ICS
- 31.080.10
- CCS
- L41
- 发布
- 1967-01-01
- 实施
These standards, adopted by the Electronic Industries Association and issued jointly by the Electronic Industries Association and the National Electrical: Manufacturers Association, were formulated by the Semiconductor Device Council of the Joint Electron Device Engineering Councils. The JEDEC Semiconductor Device Council is sponsored by both EIA and NEMA to develop standards, proposals, and data dealing with semiconductor devices. EIA-NEMA Standards are adopted in the public interest and are designed to eliminate misunderstandings between the manufacturer and the purchaser and to assist the purchaser in selecting and obtaining without delay the proper product for his particular need. Existence of such standards does not in any respect preclude any member or non-member of EIA or NEMA from manufacturing or selling products not conforming to the standard.
Measurement of Small Signal HF, VHF, and UHF Power Gain of Transistors
- ICS
- CCS
- L41
- 发布
- 1965-01-01
- 实施
Networks Si, S., and T shall be constructed to have a minimum of parasitic capacitance, shall be shielded from one another, and shall be constructed using good engineering practice. In general, an attempt should be made to construct these networks such that any unavoidable parasitic elements are included in the specified parts of the network.
Measurement of Small Signal HF, VHF, and UHF Power Gain of Transistors
- ICS
- 31.080.10
- CCS
- L41
- 发布
- 1965-01-01
- 实施
These standards, adopted by the Electronic Industries Association and issued jointly by the Electronic Industries Association and the National Electrical Manufacturers Association, were formulated by the Semiconductor Device Council of the Joint Electron Device Engineering Councils. The JEDEC Semiconductor Device Council is sponsored by both EIA and NEMA to develop standards, proposals, and data dealing with semiconductor devices.
Ranges and Conditions for Specifying Beta for Low Power, Audio Frequency Transistors for Entertainment Service
- ICS
- 31.080.10
- CCS
- L41
- 发布
- 1965-01-01
- 实施
Semiconductor optoelectronic device Detail specification for red light emitting diode for type GF115
- ICS
- 31.080.10
- CCS
- L41
- 发布
- 实施
Detail specification for silicon tuning variable capacitance diodes,Type 2CC101~104,2CC201~204,2CC301~304,2CC401~404
- ICS
- 31.080.10
- CCS
- L41
- 发布
- 实施
Measurement of Reverse Recovery Time for Semiconductor Signal Diodes / Note: Approved 1999-04-00.
- ICS
- 31.080.10
- CCS
- L41
- 发布
- 实施
Reliability assured rectifier diodes (medium and high current)
- ICS
- 31.080.10
- CCS
- L41
- 发布
- 实施
Semiconductor discrete devices Detail specification for type 2CK28 silicon large current switch diode
- ICS
- 31.080.10
- CCS
- L41
- 发布
- 实施
Semiconductor discrete devices Detail specification for type 2CK29 silicon large current switch diode
- ICS
- 31.080.10
- CCS
- L41
- 发布
- 实施
Semiconductor discrete devices Detail specification for type 2CK38 silicon large current switch diode
- ICS
- 31.080.10
- CCS
- L41
- 发布
- 实施
Semiconductor discrete devices Detail specification for type 2EK31 GaAs switching diode
- ICS
- 31.080.10
- CCS
- L41
- 发布
- 实施
Semiconductor discrete device Detail specification for silican power PIN diodes for type PIN62317
- ICS
- 31.080.10
- CCS
- L41
- 发布
- 实施
Semiconductor discrete device Detail specification for silicon power PIN diodes for type PIN 101～105
- ICS
- 31.080.10
- CCS
- L41
- 发布
- 实施
Reliability assured voltage regulator diodes and voltage reference diodes
- ICS
- 31.080.10
- CCS
- L41
- 发布
- 实施
Reliability assured low current rectifier diodes
- ICS
- 31.080.10
- CCS
- L41
- 发布
- 实施
Reliability assured low current switching diodes
- ICS
- 31.080.10
- CCS
- L41
- 发布
- 实施
Semicondutor discrete device Detail specification for silicon PIN diodes for type PIN11￣15
- ICS
- 31.080.10
- CCS
- L41
- 发布
- 实施
