L41 半导体二极管 标准查询与下载

JEDEC JESD381A-1981 二极管测量方法.重申ANSI/EIA-381-1-1992

Method of Diode 換?Measurement Reaffirmation of ANSI/EIA-381-1-1992

Method of Diode 換?Measurement Reaffirmation of ANSI/EIA-381-1-1992

JEDEC EIA-311-A-1981 HF、VHF及UHF晶体管噪声系数测量

Transistor Noise Figure and Effective Input Noise Temperature at MF, HF and VHF, Measurement of

Transistor Noise Figure and Effective Input Noise Temperature at MF, HF and VHF, Measurement of [Replaced: JEDEC EIA-283]

NF C96-621/A1:1980 NF C96-621-77的补充件1

Supplement 1 to NF C96-621-77

SJ 1381-1978 实验二极管结构与工艺

Structure and technology of test diode

SJ 1228-1977 2AP30～2AP31型锗宽带检波二极管

Detail specification for germanium wideband detector diodes,Type 2AP30~2AP31

SJ 1230-1977 锗检波二极管高频整流电流的测试方法

Methods of measurement for high frequency rectified current of germanium detector diodes

SJ 1226-1977 2AP9～2AP10型锗检波二极管

Detail specification for germanium detector diodes,Type 2AP9~2AP10

SJ 1227-1977 2AP1～2AP8,2AP21和2AP27型锗检波二极管

Detail specification for germanium detector diodes,Type 2AP1~2AP8,2AP21 and 2AP27

SJ 1225-1977 2AP11和2AP17型锗检波二极管

Detail specification for germanium detector diodes,Type 2AP11~2AP17

SJ 1229-1977 2AK1～20型锗开关二极管

Detail specification for germanium switching diodes,Type 2AK1~20

SJ 966-1975 硅开关二极管反向击穿电压的测试方法

Methods of measurement for reverse breakdown voltage of silicon switching diodes

JEDEC JESD10-1976 低频功率晶体管

This part consists of a l i s t i n g o f l e t t e r symbols, terms, and definitions which are used in other parts o f t h i s document, and some which are included for general information. symbols of limited application whose use and definition are sufficient-ly close in the document t o avoid the necessity of being included.

Low Frequency Power Transistors

SJ 910-1974 2DW50～202型硅半导体稳压二极管（暂行）

Detail specification for silicon voltage regulator diodes,Type 3DW50~202

SJ 911-1974 2DW230～236型硅平面温度补偿稳压二极管（暂行）

Detail specification for silicon planar temperature compensation voltage regulator diodes,Type 2DW230~236

SJ 909-1974 2CW50～149型硅半导体稳压二极管

Detail specification for silicon voltage regulator diodes,Type 2CW50~149

JEDEC JESD313B-1975 传导冷却功率晶体管热阻测量.EIA-313-B 前RS-313-B的修订本

JEDEC standards and publications contain material that has been prepared, reviewed, and approved through the JEDEC Board of Directors level and subsequently reviewed and approved by the JEDEC legal counsel.

Conduction Cooled Power Transistors, Thermal Resistance Measurements of Revision of EIA-313-B formerly RS-313-B

BS 9305 N044:1974 硅稳压器二极管详细规范.1.0W、3.3～33V(5%)、密封.全面评定级

Ratings, characteristics and test requirements. Semiconductor devices of assessed quality.

Detail specification for silicon voltage regulator diodes - 1.0 W, 3.3 to 33 V (5%), hermetically sealed - Full assessment level

BS 9305 N042:1972 硅稳压器二极管详细规范.1.5W、6.8～200V(5%)、密封.一般应用范围C

Ratings, characteristics and test requirements. Semiconductor devices of assessed quality. They may be regarded as direct replacements for types CV8417, CV8427 and CV7843 to CV7849.

Detail specification for silicon voltage regulator diodes - 1.5 W, 6.8 to 200 V (5%), hermetically sealed - General application category C

BS 9305 N041:1972 硅稳压器二极管详细规范.400mW、2.7-33V(5％)、密封、玻璃封装.一般应用范围Q

Specifies the ratings, characteristics and test requirements for diodes in voltage range 2.7 V to 33 V and 400 mW maximum reverse power dissipation. These diodes are regarded by the original approval authority as direct replacements for the CV7009-CV7106 and CV7138-CV7146.

Detail specification for silicon voltage regulator diodes - 400 mW, 2.7 to 33 V (5%), hermetically sealed, glass encapsulation - General application category Q

BS 9305 N001:1972 硅稳压器二极管详细规范.1.5W、3.3～33V(5%)、密封.一般应用范围Q

Ratings, characteristics and test requirements. Semiconductor devices of assessed quality. They may be regarded as replacements for types CV7405 to CV7429.

Detail specification for silicon voltage regulator diodes - 1.5 W, 3.3 to 33 V (5%), hermetically sealed - General application category Q