L41 半导体二极管 标准查询与下载

JEDEC EIA-398-1972 晶体管电容微量值测量

Transistor capacitances are usually measured on two-terminal capacitance or impedance bridges. When the capacitances are in the low picofarad ranges, this two terminal measurement is not very accurate or reproducible. The stray capacitances to ground are of the same order of magnitude as the quantities being measured and vary with mechanical changes in the surrounding ground planes.

Measurement of Small Values of Transistor Capacitance

JEDEC JESD25-1972 称微弱信号晶体管散射参数测量

Measurement of Small-Signal Transistor Scattering Parameters

Measurement of Small-Signal Transistor Scattering Parameters

BS 9300 C667-668:1971 硅雪崩整流器二极管详细规范

This specification covers the detail requirements for a Silicon Avalanche Rectifier Diode and is in accordance with K1007. Issue 3. except as otherwise stated.

Detail specification for silicon avalanche rectifier diodes

BS 9301 N002:1971 通用硅信号二极管详细规范.150mA、150V、密封、玻璃封装.一般应用范围Q

Specifies the ratings, characteristics and test requirements for a general purpose signal diode in general application category (Q) of semiconductor devices of assessed quality. This diode may be expected to operate in many circuits for which the CV8790 has previously been specified.

Detail specification for general purpose silicon signal diodes - 150 mA, 150 V, hermetically sealed, glass encapsulation - General application category Q

BS 9300 C377-378:1971 硅同轴混合二极管详细规范

This specification oovers the detail requireaents for Silicon Coaxial Mixer Diodes and is in accordance with Specification K1OO7, Issue 3, except where otherwise stated.

Detail specifications for silicon coaxial mixer diodes

BS 9300 C778:1971 锗同轴混频器二极管配对用详细规范

The matched pair consists of one C776 and one C777.

Detail specification for a matched pair of germanium coaxial mixer diodes

BS 9300 C776-777:1971 锗同轴混频器二极管详细规范

This specification covers the detail requirements for germanium coaxial mixer diodes and is in accordance with Specification K1007, Issue 3, except where otherwise stated.

Detail specification for germanium coaxial mixer diodes

BS 9300 C771-772:1971 同轴混频器二极管详细规范

This specification covers the detail requirements for a Coaxial Mixer Diode and is in accordance with K1007, Issue 3, except as otherwise stated.

Detail specification for coaxial mixer diodes

BS 9300 C534:1971 硅同轴电阻开关二极管详细规范

This Specification covers the detail requirements for a Silicon Coaxial Resistive Switching Diode and is in accordance with K1007 except where otherwise stated.

Detail specification for silicon coaxial resistive switching diode

BS 9300 C599:1971 安装于杆上的硅微波开关二极管详细规范

This specification covers the detail requirements for microwave Silicon Switching Diodes Rod Mounted. The diodes are unencapsulated and not tested for moisture resistance and are in accordance with K1007, except as otherwise stated.

Detail specification for silicon microwave switching diode, rod mounted

BS 9300 C762:1980 X波段用混频器二极管详细规范

Detail specification for mixer diodes for use at X-band frequencies

BS 9300 C678-721:1980 硅稳压器二极管详细规范

Detail specification for silicon voltage regulator diodes

BS 9300 C405-429:1971 硅稳压器二极管详细规范

This Specification covers the detail requirements for Silicon Voltage-Regulator Diodes, and is in accordance with K1007, except as otherwise stated.

Detail specifications for silicon voltage-regulator diodes

BS 9300 C199-276:1971 硅稳压器二极管详细规范

Electronic parts of assessed quality —Silicon voltage-regulator diodes Figure 1 —Power derating Figure 2 Table Ⅰ —Group A Inspection Table Ⅱ —Group B Inspection Table Ⅲ —Group C Inspection

Detail specification for silicon voltage-regulator diodes

BS 9300 C780-831:1971 硅稳压器二极管详细规范

This specification covers the detail requirements for Silicon Voltage Regulator Diodes and is in accordance with K1OO7, Issue 3, except as otherwise stated.

Detail specification for silicon voltage regulator diodes

BS 9300 C841-849:1971 硅稳压器二极管详细规范

This specification covers the detail requirements for Silicon Voltage Regulator diodes and is in accordance with K 1007 Issue 3 except as otherwise stated.

Detail specification for silicon voltage regulator diodes

JEDEC EIA-372-1970 小信号VHF-UHF晶体管准入参数的测量

The measuring system must provide a means for applying bias to the transistor under test. The bias system must be such as not to influence the accuracy of the measurements.

Measurement of Small-Signal VHF-UHF Transistor Admittance Parameters

JEDEC EIA-371-1970 小信号VHF-UHF晶体管短路前向电压传输比的测量

The measuring system must provide a means for applying bias to the transistor under test. The bias system must be such as not to influence the accuracy of the measurements. The signal applied by the measuring system to the transistor must be sufficiently smail to satisfy the “small-signal conditions” defined in 1.2. In addition, any spurious signals which might appear at the transistor terminals, and in particular, the local oscillator feedthrough when a superheterodyne receiver is used, must be kept at least 20 dB * below the specified small-signal conditions.

Measurement of Small-Signal VHF-UHF Transistor Short-Circuit Forward Current Transfer Ratio

JEDEC EIA-354-1968 20 kHz频段以上晶体管同等噪声电压的同等噪声

The following noise measurement method applies to transistors whose noise has a Gaussian power distribution, to transistors whose noise has a flat (white) power distribution, and to transistors whose noise has a 1 /f (power inversely proportional to frequency) power distribution.

Transistor Equivalent Noise Voltage and Equivalent Noise Current at Frequencies up to 20 kHz, Measurement of

JEDEC EIA-353-1968 20 kHz频段以上的晶体管噪声轮廓的测试

The following noise measurement method applies to transistors whose noise has a Gaussian power distribution, to transistors whose noise has a flat (white) power distribution, and to transistors whose noise has a l/f (power inversely proportional to frequency) power distribution.

Transistor Noise Figure at Frequencies up to 20 kHz by Sinusoidal Signal-Generator Method, Measurement of