L90 电子技术专用材料 标准查询与下载

JIS C 6832:1999 石英玻璃多模光纤

この規格は，コア及びクラッドに石英系ガラスを使用した石英系マルチモード光ファイバ素線について規定する。

Silica glass multimode optical fibers

ASTM F1513-99(2011) 用于电子薄膜的纯铝(非合金)材料标准规范

1.1 This specification covers pure aluminum metal (unalloyed) for use in evaporation sources and sputtering targets. This material is intended as a raw material for electronic applications. The material is used as-supplied in some cases (for example, as e-beam evaporation sources). In other instances it may be remelted, alloyed, cast and processed by the purchaser to make finished products (for example, sputtering targets). 1.2 This specification sets purity grade levels, physical attributes, analytical methods, and packaging. 1.3 The values stated in SI units are to be regarded as standard. No other units of measurement are included in this standard.

Standard Specification for Pure Aluminum (Unalloyed) Source Material for Electronic Thin Film Applications

IEC PAS 62085:1998 球形格栅排列和其他高密度技术的执行

Implementation of Ball Grid Array and other High Density technology

BS EN 60512-14-7:1998 电子设备的机电元件 基本测试程序和测量方法 密封测试 测试14克 冲击水

Defines a standard test method to assess the effects of impacting water or specified fluid on electrical connecting devices. To be read in conjunction with BS EN 60512-1:1995

Electromechanical components for electronic equipment. Basic testing procedures and measuring methods. Sealing tests. Test 14g. Impacting water

SJ 20717-1998 氧化锌压电薄膜规范

本规范规定了氧化锌压电薄膜的要求、质量保证规定和交货准备等。 本规范适用于声体波微波延迟线及氧化锌(ZnO)、硅(Si)声表面波卷积器、存贮相关器使用的氧化锌压电薄膜。

Specification for ZnO piezoelectric films

SJ 20673-1998 军用电磁屏蔽橡胶衬垫材料通用规范

General specification for military electromagnetic shielding elastomer for gaskets

IPC TM-650 2.5.5.5-1998 修订版C,在x波段,介电常数和损失正切(介电常数和耗散因子)的带状线测试

Stripline Test for Permittivity and Loss Tangent (Dielectric Constant and Dissipation Factor) at X-Band Revision C

Stripline Test for Permittivity and Loss Tangent (Dielectric Constant and Dissipation Factor) at X-Band Revision C

IPC TM-650 2.5.5.5.1-1998 14千兆赫电路板材料的相对复杂介电常数带状线测试

Stripline Test for Complex Relative Permittivity of Circuit Board Materials to 14 GHz

Stripline Test for Complex Relative Permittivity of Circuit Board Materials to 14 GHz

ASTM F1894-98(2011) 定量分析硅化钨半导体加工膜组分和厚度的标准试验方法

This test method can be used to ensure absolute reproducibility of WSix film deposition systems over the course of many months. The time span of measurements is essentially the life of many process deposition systems. This test method can be used to qualify new WSix deposition systems to ensure duplicability of existing systems. This test method is essential for the coordination of global semiconductor fabrication operations using different analytical services. This test method allows samples from various deposition systems to be analyzed at different sites and times. This test method is the chosen calibration technique for a variety of analytical techniques, including, but not limited to: Electron spectroscopy for chemical analysis (ESCA or XPS), Auger electron spectroscopy (AES), Fourier transform infrared red spectroscopy (FTIR), Secondary ion mass spectrometry (SIMS), and Electron dispersive spectrometry (EDS) and particle induced x-ray emission (PIXE).1.1 This test method covers the quantitative determination of tungsten and silicon concentrations in tungsten/silicon (WSix) semiconductor process films using Rutherford Backscattering Spectrometry (RBS). (1) This test method also covers the detection and quantification of impurities in the mass range from phosphorus ?/span> (31 atomic mass units (amu) to antimony (122 amu). 1.2 This test method can be used for tungsten silicide films prepared by any deposition or annealing processes, or both. The film must be a uniform film with an areal coverage greater than the incident ion beam (8764;2.5 mm). 1.3 This test method accurately measures the following film properties: silicon/tungsten ratio and variations with depth, tungsten depth profile throughout film, WSix film thickness, argon concentrations (if present), presence of oxide on surface of WSix films, and transition metal impurities to detection limits of 1×1014 atoms/cm2. 1.4 This test method can detect absolute differences in silicon and tungsten concentrations of ±3 and ±1 atomic percent, respectively, measured from different samples in separate analyses. Relative variations in the tungsten concentration in depth can be detected to ±0.2 atomic percent with a depth resolution of ±70?/span>. 1.5 This test method supports and assists in qualifying WSix films by electrical resistivity techniques. 1.6 This test method can be performed for WSix films deposited on conducting or insulating substrates. 1.7 This test method is useful for WSix films between 20 and 400 nm with an areal coverage of greater than 1 by 1 mm2. 1.8 This test method is non-destructive to the film to the extent of sputtering. 1.9 A statistical process control (SPC) of WSix films has been monitored since 1993 with reproducibility to ±4 %. 1.10 This test method produces accurate film thicknesses by modeling the film density of the WSix film as WSi2 (hexagonal) plus excess elemental Si2. The measured film thickness is a lower limit to the actual film thickness with an accuracy less than 10 % compared to SEM cross-section measurements (see 13.4). 1.11 This test method can be used to analyze films on whole wafers up to 300 mm without breaking the wafers. The sites that can be ......

Test Method for Quantifying Tungsten Silicide Semiconductor Process Films for Composition and Thickness

IPC TM-650 5.5.4.4-1998 试件B-附着力、钝化、介电性、真空除气

This test measures changes in resistance of plated-through hole barrels and internal layer connections as holes are subjected to thermal cycling. Thermal cycling is produced by the application of a current through a specific coupon configuration.

Test Coupon B - Adhesion, Passivation, Dielectric Resistance, and Outgassing

IPC TM-650 2.5.5.9-1998 1兆赫到1.5千兆赫平行板,介电常数和损耗切线

This document covers guidelines for selecting electrically conductive adhesives for use in assembly of components to printed circuit boards (PCB) or similar wiring interconnect systems. The focus is on the use of adhesives as solder alternatives. The process discussion attempts to stay within the bounds of the existing solder assembly infrastructure as much as possible. Both major types of adhesives, isotropic (conducting equally in all directions) and anisotropic (unidirectional conductivity), are covered. The two major divisions of polymer adhesives, thermosets and thermoplastics, are described.

Permittivity and Loss Tangent, Parallel Plate, 1 MHz to 1.5 GHz

BS EN 60512-1-4:1997 电子设备的机电元件 基本测试程序和测量方法 一般的 测试1d 接触防护效果（防勺）

Applies primarily to cylindrical multi-contact connectors which are required to be scoop-proof.

Electromechanical components for electronic equipment. Basic testing procedures and measuring methods. General. Test 1d. Contact protection effectiveness (scoop-proof)

ANSI/EIA 540H000:1997 电子设备用带球形式格子排列装置的焊上插孔的分规范

Relates to the burn-in sockets for Ball Grid Array (BGA) devices of assessed quality.

Sectional Specification for Burn-In Sockets Used with Ball Grid Array Devices for Use in Electronic Equipment

NF C93-473-4:1997 电子设备的电机元件.基本试验过程和测量方法.第10部分:撞击试验.(活动元件).静态负载试验(固定元件).耐力试验和超负载试验.第4节:试验10D:电超负载(接点)(欧洲标准EN 60 512-10-4)

ELECTROMEDICAL COMPONENTS FOR ELECTRONIC EQUIPMENT. BASIC TESTING PROCEDURES AND MEASURING METHODS. PART 10 : IMPACT TESTS (FREE COMPONENTS), STATIC LOAD TESTS (FIXED COMPONENTS), ENDURANCE TESTS AND OVERLOAD TESTS. SECTION 4 : TEST 10D : ELECTRICAL OVERL

NF C93-472-6:1997 电子设备的电机元件.基本试验过程和测量方法.第12部分:焊接试验.第6节:试验12F:机械焊接过程中耐液体和清洁溶剂的密封

ELECTROMECHANICAL COMPONENTS FOR ELECTRONIC EQUIPMENT. BASIC TESTING PROCEDURES AND MEASURING METHODS. PART 12 : SOLDERING TESTS. SECTION 6 : TEST 12F : SEALING AGAINST FLUX AND CLEANING SOLVENTS IN MACHINE SOLDERING. (EUROPEAN STANDARD EN 60 512-12-6).

NF C93-471-7:1997 电子设备的电机元件.基本试验过程和测量方法.第11部分:气候试验.第7节:试验11G:流动混合气体腐蚀试验

ELECTROMECHANICAL COMPONENTS FOR ELECTRONIC EQUIPMENT. BASIC TESTING PROCEDURES AND MEASURING METHODS. PART 11 : CLIMATIC TESTS. SECTION 7 : TEST 11G : FLOWING MIXED GAS CORROSION TEST. (EUROPEAN STANDARD EN 60 512-11-7).

NF C93-470-8:1997 电子设备的电机元件.基本试验过程和测量方法.第15部分:接点和终端的机械试验.第8节:试验15H:抗工具的接触保持系统

ELECTROMECHANICAL COMPONENTS FOR ELECTRONIC EQUIPMENT. BASIC TESTING PROCEDURES AND MEASURING METHODS. PART 15 : MECHANICAL TESTS ON CONTACTS AND TERMINATIONS. SECTION 8 : TEST 15H : CONTACT RETENTION SYSTEM RESISTANCE TO TOOL APPLICATION. (EUROPEAN STAND

NF C93-471-14:1997 电子设备用机电元件.基本试验规程和测量方法.气候试验.试验11p.流动的单种气体腐蚀试验.(欧洲标准 EN 60 512-11-14)

ELECTROMECHANICAL COMPONENTS FOR ELECTRONIC EQUIPMENT. BASIC TESTING PROCEDURES AND MEASURING METHODS. PART 11 : CLIMATIC TESTS. SECTION 14 : TEST 11P. FLOWING SINGLE GAS CORROSION TEST. (EUROPEAN STANDARD EN 60 512-11-14).

SJ/T 11140-1997 铝电解电容器用电极箔

本标准规定了铝电解电容器用电极箔的型号命名、要求、试验方法、检验规则、包装、贮存、运输、标志。 本标准适用于铝电解电容器用的电极箔(包括：阴极箔、阳极未形成箔、阳极形成箔)。

Electrode foil for aluminum electrolytic capacitor

SJ/T 11124-1997 电子元器件用环氧系粉末包封材料

本标准规定了电了元器件用环氧系粉末包封材料的分类、要求、试验方法、检验规则、包装、标志、运输、贮存。 本标准适用于制造电阻器、高压陶瓷电容器、钽电容器及电限网络等电子元器件包封所需的粉末包封料。

Encapsulation materials of expoy series powder for use in electronic components