31.080.10;31.080.30 标准查询与下载
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Semiconductor devices - Discrete devices - Part 4: Microwave diodes and transistors
- ICS
- 31.080.10;31.080.30
- CCS
- L41
- 发布
- 2017-01
- 实施
- 2017-02-01
This part of IEC 60747 gives requirements for the following categories of discrete devices: – variable capacitance diodes and snap-off diodes (for tuning, up-converter or harmonic multiplication, switching, limiting, phased shift, parametric amplification); – mixer diodes and detector diodes; – avalanche diodes (for direct harmonic generation, amplification); – gunn diodes (for direct harmonic generation); – bipolar transistors (for amplification, oscillation); – field-effect transistors (for amplification, oscillation).
Semiconductor devices - Discrete devices - Microwave diodes and transistors
- ICS
- 31.080.10;31.080.30
- CCS
- L40
- 发布
- 2008-02-29
- 实施
- 2008-02-29
This part of IEC 60747 gives requirements for the following categories of discrete devices: – variable capacitance diodes and snap-off diodes (for tuning, up-converter or harmonic multiplication, switching, limiting, phased shift, parametric amplification); – mixer diodes and detector diodes; – avalanche diodes (for direct harmonic generation, amplification); – gunn diodes (for direct harmonic generation); – bipolar transistors (for amplification, oscillation); – field-effect transistors (for amplification, oscillation).
Semiconductor devices - Discrete devices - Part 4: Microwave diodes and transistors
- ICS
- 31.080.10;31.080.30
- CCS
- L41
- 发布
- 2007-08
- 实施
- 2017-02-01
서 문 이 규격은 2000년에 제1판으로 발행된 IEC 60747-4-2&
Semiconductor devices－Discrete devices－Part 4－2：Microwave diodes and transistors－Integrated-circuit microwave amplifiers－Blank detail specification
- ICS
- 31.080.10;31.080.30
- CCS
- K46
- 发布
- 2002-12-31
- 实施
- 2002-12-31
The present publication gives standards for the following categories of discrete devices: - Variable capacitance diodes and snap-off diodes (for tuning, up-converter or harmonic multiplication, switching, limiting, phased shift, parametric amplification...) - Mixer diodes and detector diodes - Avalanche diodes (for direct harmonic generation, amplification...) - Gunn diodes (for direct harmonic generation...) - Bipolar transistors (for amplification, oscillation...) - Field-effect transistors (for amplification, oscillation...).
Semiconductor devices - Discrete devices - Part 4: Microwave devices
- ICS
- 31.080.10;31.080.30
- CCS
- L56
- 发布
- 2001-09
- 实施
Semiconductor devices - Discrete devices - Part 4: Microwave devices; Amendment 2
- ICS
- 31.080.10;31.080.30
- CCS
- L56
- 发布
- 1999-04
- 实施
Replaces the titles of chapter II (now: Variable capacitance diodes, snap-off diodes and fast-switching Schottky diodes) and section two (now: Snap-off diodes, Schottky diodes), adds subclause 4.3 (including 4.3.1 to 4.3.6) to chapter II, clauses 1 to 4
Semiconductor devices; discrete devices; part 4: microwave diodes and transistors; amendment 1
- ICS
- 31.080.10;31.080.30
- CCS
- L43
- 发布
- 1993-10
- 实施
Gives standards for the following discrete devices: - variable capacitance diodes and snap-off diodes; - mixer diodes and detector diodes; - avalanche diodes; - Gunn diodes; - bipolar transistors; - field-effect transistors.
Semiconductor devices; discrete devices; part 4: microwave diodes and transistors
- ICS
- 31.080.10;31.080.30
- CCS
- L45
- 发布
- 1991-04
- 实施
- 1999-04-23
