The purpose of this test method is to measure the thermal impedance of the IGBT (Insulated Gate Bipolar Transistor) under the specified conditions of applied voltage, current and pulse duration. The temperature sensitivity of the collector-emitter on voltage, VCE(on), is used as the junction temperature indicator. This is an alternative method to JEDEC Standard No. 24-6.
JEDEC JESD24-12-2004由(美国)固态技术协会,隶属EIA US-JEDEC 发布于 2004-06-01。
JEDEC JESD24-12-2004 在中国标准分类中归属于: L41 半导体二极管,在国际标准分类中归属于: 31.080.10 二极管。
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